KR101254832B1 - 이미지 센서 및 이를 포함하는 카메라 - Google Patents

이미지 센서 및 이를 포함하는 카메라 Download PDF

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Publication number
KR101254832B1
KR101254832B1 KR1020077028074A KR20077028074A KR101254832B1 KR 101254832 B1 KR101254832 B1 KR 101254832B1 KR 1020077028074 A KR1020077028074 A KR 1020077028074A KR 20077028074 A KR20077028074 A KR 20077028074A KR 101254832 B1 KR101254832 B1 KR 101254832B1
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implant
floating diffusion
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interconnect layer
source drain
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Korean (ko)
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KR20080011684A (ko
Inventor
로버트 마이클 가이다쉬
라비 므루티운자야
웨이즈 슈
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020077028074A 2005-06-02 2006-05-31 이미지 센서 및 이를 포함하는 카메라 Active KR101254832B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68671505P 2005-06-02 2005-06-02
US60/686,715 2005-06-02
US11/440,894 2006-05-25
US11/440,894 US8253214B2 (en) 2005-06-02 2006-05-25 CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance
PCT/US2006/020716 WO2006130545A2 (en) 2005-06-02 2006-05-31 Cmos active pixel sensor shared amplifier pixel

Publications (2)

Publication Number Publication Date
KR20080011684A KR20080011684A (ko) 2008-02-05
KR101254832B1 true KR101254832B1 (ko) 2013-04-15

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KR1020077028074A Active KR101254832B1 (ko) 2005-06-02 2006-05-31 이미지 센서 및 이를 포함하는 카메라

Country Status (6)

Country Link
US (1) US8253214B2 (enExample)
EP (2) EP2276065A3 (enExample)
JP (1) JP5036709B2 (enExample)
KR (1) KR101254832B1 (enExample)
TW (1) TWI399848B (enExample)
WO (1) WO2006130545A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
JP5422455B2 (ja) * 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
FR2975529B1 (fr) * 2011-05-20 2013-09-27 Soc Fr Detecteurs Infrarouges Sofradir Circuit de detection a faible flux et faible bruit
US9190434B2 (en) * 2011-09-30 2015-11-17 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US8461660B2 (en) * 2011-09-30 2013-06-11 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US9571763B2 (en) * 2014-01-10 2017-02-14 Omnivision Technologies, Inc. Split pixel high dynamic range sensor
US9526468B2 (en) * 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
DE102020111562A1 (de) 2020-04-28 2021-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
DE102021128022B3 (de) 2021-10-27 2023-02-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052598A (ko) * 1998-12-31 2000-08-25 로버트 디. 크루그 화상 센서
JP2004023107A (ja) * 2002-06-20 2004-01-22 Samsung Electronics Co Ltd イメージセンサ及びその製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US6107655A (en) 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JPH11274461A (ja) 1998-03-23 1999-10-08 Sony Corp 固体撮像装置とその製造方法
US6750912B1 (en) 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP4721380B2 (ja) 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
JP4115152B2 (ja) 2002-04-08 2008-07-09 キヤノン株式会社 撮像装置
JP3795846B2 (ja) 2002-08-29 2006-07-12 富士通株式会社 半導体装置
FR2844398A1 (fr) 2002-09-11 2004-03-12 St Microelectronics Sa Photodetecteur d'un capteur d'images
US7087944B2 (en) 2003-01-16 2006-08-08 Micron Technology, Inc. Image sensor having a charge storage region provided within an implant region
US7859581B2 (en) 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
JP4230406B2 (ja) 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
US7115925B2 (en) * 2005-01-14 2006-10-03 Omnivision Technologies, Inc. Image sensor and pixel having an optimized floating diffusion
US8130304B2 (en) * 2009-07-24 2012-03-06 Aptina Imaging Corporation Image sensors with pixel charge summing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052598A (ko) * 1998-12-31 2000-08-25 로버트 디. 크루그 화상 센서
JP2004023107A (ja) * 2002-06-20 2004-01-22 Samsung Electronics Co Ltd イメージセンサ及びその製造方法

Also Published As

Publication number Publication date
JP5036709B2 (ja) 2012-09-26
WO2006130545A3 (en) 2007-01-25
JP2008543085A (ja) 2008-11-27
TWI399848B (zh) 2013-06-21
EP1894246A2 (en) 2008-03-05
US20060273353A1 (en) 2006-12-07
US8253214B2 (en) 2012-08-28
EP2276065A2 (en) 2011-01-19
EP2276065A3 (en) 2012-04-04
WO2006130545A2 (en) 2006-12-07
EP1894246B1 (en) 2012-10-31
KR20080011684A (ko) 2008-02-05
TW200703634A (en) 2007-01-16

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