JP5036709B2 - Ｃｍｏｓ能動画素センサの増幅器を共有した画素 - Google Patents

Ｃｍｏｓ能動画素センサの増幅器を共有した画素 Download PDF

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JP5036709B2
JP5036709B2 JP2008514748A JP2008514748A JP5036709B2 JP 5036709 B2 JP5036709 B2 JP 5036709B2 JP 2008514748 A JP2008514748 A JP 2008514748A JP 2008514748 A JP2008514748 A JP 2008514748A JP 5036709 B2 JP5036709 B2 JP 5036709B2
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floating diffusion
amplifier
region
wiring layer
pixel
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JP2008543085A (ja
JP2008543085A5 (enExample
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ロバート マイケル ギダッシュ
ラビィ ムルシウンジャヤ
ウェイズ シュー
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008514748A 2005-06-02 2006-05-31 Ｃｍｏｓ能動画素センサの増幅器を共有した画素 Active JP5036709B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68671505P 2005-06-02 2005-06-02
US60/686,715 2005-06-02
US11/440,894 2006-05-25
US11/440,894 US8253214B2 (en) 2005-06-02 2006-05-25 CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance
PCT/US2006/020716 WO2006130545A2 (en) 2005-06-02 2006-05-31 Cmos active pixel sensor shared amplifier pixel

Publications (3)

Publication Number Publication Date
JP2008543085A JP2008543085A (ja) 2008-11-27
JP2008543085A5 JP2008543085A5 (enExample) 2009-07-30
JP5036709B2 true JP5036709B2 (ja) 2012-09-26

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JP2008514748A Active JP5036709B2 (ja) 2005-06-02 2006-05-31 Ｃｍｏｓ能動画素センサの増幅器を共有した画素

Country Status (6)

Country Link
US (1) US8253214B2 (enExample)
EP (2) EP2276065A3 (enExample)
JP (1) JP5036709B2 (enExample)
KR (1) KR101254832B1 (enExample)
TW (1) TWI399848B (enExample)
WO (1) WO2006130545A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
JP5422455B2 (ja) * 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
FR2975529B1 (fr) * 2011-05-20 2013-09-27 Soc Fr Detecteurs Infrarouges Sofradir Circuit de detection a faible flux et faible bruit
US9190434B2 (en) * 2011-09-30 2015-11-17 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US8461660B2 (en) * 2011-09-30 2013-06-11 Omnivision Technologies, Inc. CMOS image sensor with reset shield line
US9571763B2 (en) * 2014-01-10 2017-02-14 Omnivision Technologies, Inc. Split pixel high dynamic range sensor
US9526468B2 (en) * 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
DE102020111562A1 (de) 2020-04-28 2021-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
DE102021128022B3 (de) 2021-10-27 2023-02-02 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107655A (en) 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JPH11274461A (ja) 1998-03-23 1999-10-08 Sony Corp 固体撮像装置とその製造方法
US6657665B1 (en) 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US6750912B1 (en) 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP4721380B2 (ja) 2000-04-14 2011-07-13 キヤノン株式会社 固体撮像装置および撮像システム
JP4115152B2 (ja) 2002-04-08 2008-07-09 キヤノン株式会社 撮像装置
JP4541666B2 (ja) 2002-06-20 2010-09-08 三星電子株式会社 イメージセンサ及びその製造方法
JP3795846B2 (ja) 2002-08-29 2006-07-12 富士通株式会社 半導体装置
FR2844398A1 (fr) 2002-09-11 2004-03-12 St Microelectronics Sa Photodetecteur d'un capteur d'images
US7087944B2 (en) 2003-01-16 2006-08-08 Micron Technology, Inc. Image sensor having a charge storage region provided within an implant region
US7859581B2 (en) 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
JP4067054B2 (ja) * 2004-02-13 2008-03-26 キヤノン株式会社 固体撮像装置および撮像システム
JP4230406B2 (ja) 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
US7115925B2 (en) * 2005-01-14 2006-10-03 Omnivision Technologies, Inc. Image sensor and pixel having an optimized floating diffusion
US8130304B2 (en) * 2009-07-24 2012-03-06 Aptina Imaging Corporation Image sensors with pixel charge summing

Also Published As

Publication number Publication date
WO2006130545A3 (en) 2007-01-25
JP2008543085A (ja) 2008-11-27
TWI399848B (zh) 2013-06-21
EP1894246A2 (en) 2008-03-05
US20060273353A1 (en) 2006-12-07
US8253214B2 (en) 2012-08-28
EP2276065A2 (en) 2011-01-19
EP2276065A3 (en) 2012-04-04
KR101254832B1 (ko) 2013-04-15
WO2006130545A2 (en) 2006-12-07
EP1894246B1 (en) 2012-10-31
KR20080011684A (ko) 2008-02-05
TW200703634A (en) 2007-01-16

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