JP5036709B2 - Cmos能動画素センサの増幅器を共有した画素 - Google Patents
Cmos能動画素センサの増幅器を共有した画素 Download PDFInfo
- Publication number
- JP5036709B2 JP5036709B2 JP2008514748A JP2008514748A JP5036709B2 JP 5036709 B2 JP5036709 B2 JP 5036709B2 JP 2008514748 A JP2008514748 A JP 2008514748A JP 2008514748 A JP2008514748 A JP 2008514748A JP 5036709 B2 JP5036709 B2 JP 5036709B2
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- JP
- Japan
- Prior art keywords
- floating diffusion
- amplifier
- region
- wiring layer
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000009792 diffusion process Methods 0.000 claims description 39
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (2)
- 複数の画素を有する単位セルを含み、
前記単位セルは、
(a)前記複数の画素に共有された増幅器入力用トランジスタと、
(b)浮遊拡散配線層によって結合されていると共に前記増幅器入力用トランジスタに接続された複数の浮遊拡散領域と、
(c)出力信号用配線を構成する配線層であって、前記出力信号用配線の上に設けられる前記浮遊拡散配線層をシールドする配線層と、
を含むことを特徴とする画像センサ。 - 請求項1に記載の画像センサを備えることを特徴とするカメラ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68671505P | 2005-06-02 | 2005-06-02 | |
US60/686,715 | 2005-06-02 | ||
US11/440,894 | 2006-05-25 | ||
US11/440,894 US8253214B2 (en) | 2005-06-02 | 2006-05-25 | CMOS shared amplifier pixels with output signal wire below floating diffusion interconnect for reduced floating diffusion capacitance |
PCT/US2006/020716 WO2006130545A2 (en) | 2005-06-02 | 2006-05-31 | Cmos active pixel sensor shared amplifier pixel |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008543085A JP2008543085A (ja) | 2008-11-27 |
JP2008543085A5 JP2008543085A5 (ja) | 2009-07-30 |
JP5036709B2 true JP5036709B2 (ja) | 2012-09-26 |
Family
ID=36933356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514748A Active JP5036709B2 (ja) | 2005-06-02 | 2006-05-31 | Cmos能動画素センサの増幅器を共有した画素 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8253214B2 (ja) |
EP (2) | EP1894246B1 (ja) |
JP (1) | JP5036709B2 (ja) |
KR (1) | KR101254832B1 (ja) |
TW (1) | TWI399848B (ja) |
WO (1) | WO2006130545A2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8913166B2 (en) * | 2009-01-21 | 2014-12-16 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
JP5422455B2 (ja) | 2010-03-23 | 2014-02-19 | パナソニック株式会社 | 固体撮像装置 |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5697371B2 (ja) | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
FR2975529B1 (fr) * | 2011-05-20 | 2013-09-27 | Soc Fr Detecteurs Infrarouges Sofradir | Circuit de detection a faible flux et faible bruit |
US9190434B2 (en) * | 2011-09-30 | 2015-11-17 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
US8461660B2 (en) * | 2011-09-30 | 2013-06-11 | Omnivision Technologies, Inc. | CMOS image sensor with reset shield line |
US9571763B2 (en) | 2014-01-10 | 2017-02-14 | Omnivision Technologies, Inc. | Split pixel high dynamic range sensor |
US9526468B2 (en) * | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
DE102020111562A1 (de) | 2020-04-28 | 2021-10-28 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
DE102021128022B3 (de) | 2021-10-27 | 2023-02-02 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107655A (en) | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
JP3219036B2 (ja) * | 1997-11-11 | 2001-10-15 | 日本電気株式会社 | 固体撮像装置 |
JPH11274461A (ja) | 1998-03-23 | 1999-10-08 | Sony Corp | 固体撮像装置とその製造方法 |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
US6750912B1 (en) * | 1999-09-30 | 2004-06-15 | Ess Technology, Inc. | Active-passive imager pixel array with small groups of pixels having short common bus lines |
JP4721380B2 (ja) | 2000-04-14 | 2011-07-13 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP4115152B2 (ja) | 2002-04-08 | 2008-07-09 | キヤノン株式会社 | 撮像装置 |
JP4541666B2 (ja) * | 2002-06-20 | 2010-09-08 | 三星電子株式会社 | イメージセンサ及びその製造方法 |
JP3795846B2 (ja) | 2002-08-29 | 2006-07-12 | 富士通株式会社 | 半導体装置 |
FR2844398A1 (fr) | 2002-09-11 | 2004-03-12 | St Microelectronics Sa | Photodetecteur d'un capteur d'images |
US7087944B2 (en) | 2003-01-16 | 2006-08-08 | Micron Technology, Inc. | Image sensor having a charge storage region provided within an implant region |
US7859581B2 (en) * | 2003-07-15 | 2010-12-28 | Eastman Kodak Company | Image sensor with charge binning and dual channel readout |
JP4067054B2 (ja) * | 2004-02-13 | 2008-03-26 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP4230406B2 (ja) | 2004-04-27 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
US7115925B2 (en) * | 2005-01-14 | 2006-10-03 | Omnivision Technologies, Inc. | Image sensor and pixel having an optimized floating diffusion |
US8130304B2 (en) * | 2009-07-24 | 2012-03-06 | Aptina Imaging Corporation | Image sensors with pixel charge summing |
-
2006
- 2006-05-25 US US11/440,894 patent/US8253214B2/en active Active
- 2006-05-31 EP EP06771466A patent/EP1894246B1/en active Active
- 2006-05-31 KR KR1020077028074A patent/KR101254832B1/ko active IP Right Grant
- 2006-05-31 EP EP10189352A patent/EP2276065A3/en not_active Withdrawn
- 2006-05-31 WO PCT/US2006/020716 patent/WO2006130545A2/en active Application Filing
- 2006-05-31 JP JP2008514748A patent/JP5036709B2/ja active Active
- 2006-06-02 TW TW095119512A patent/TWI399848B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR101254832B1 (ko) | 2013-04-15 |
EP1894246A2 (en) | 2008-03-05 |
JP2008543085A (ja) | 2008-11-27 |
KR20080011684A (ko) | 2008-02-05 |
WO2006130545A2 (en) | 2006-12-07 |
US20060273353A1 (en) | 2006-12-07 |
WO2006130545A3 (en) | 2007-01-25 |
EP2276065A3 (en) | 2012-04-04 |
EP1894246B1 (en) | 2012-10-31 |
TWI399848B (zh) | 2013-06-21 |
US8253214B2 (en) | 2012-08-28 |
EP2276065A2 (en) | 2011-01-19 |
TW200703634A (en) | 2007-01-16 |
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