HK1186572A1 - 圖像傳感器像素及其操作方法以及圖像傳感器 - Google Patents

圖像傳感器像素及其操作方法以及圖像傳感器

Info

Publication number
HK1186572A1
HK1186572A1 HK13113887.4A HK13113887A HK1186572A1 HK 1186572 A1 HK1186572 A1 HK 1186572A1 HK 13113887 A HK13113887 A HK 13113887A HK 1186572 A1 HK1186572 A1 HK 1186572A1
Authority
HK
Hong Kong
Prior art keywords
image sensor
operating
same
pixel
sensor pixel
Prior art date
Application number
HK13113887.4A
Other languages
English (en)
Inventor
希内切克．雅羅斯拉夫
Original Assignee
普廷數碼影像控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 普廷數碼影像控股公司 filed Critical 普廷數碼影像控股公司
Publication of HK1186572A1 publication Critical patent/HK1186572A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK13113887.4A 2011-12-12 2013-12-13 圖像傳感器像素及其操作方法以及圖像傳感器 HK1186572A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161569743P 2011-12-12 2011-12-12
US13/476,784 US8937272B2 (en) 2011-12-12 2012-05-21 Vertical JFET source follower for small pixel CMOS image sensors

Publications (1)

Publication Number Publication Date
HK1186572A1 true HK1186572A1 (zh) 2014-03-14

Family

ID=48571111

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13113887.4A HK1186572A1 (zh) 2011-12-12 2013-12-13 圖像傳感器像素及其操作方法以及圖像傳感器

Country Status (6)

Country Link
US (1) US8937272B2 (zh)
CN (1) CN103165631B (zh)
DE (1) DE102012213085B4 (zh)
HK (1) HK1186572A1 (zh)
TW (1) TWI497697B (zh)
WO (1) WO2013089828A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8569806B2 (en) * 2011-09-02 2013-10-29 Hoon Kim Unit pixel of image sensor and photo detector thereof
US9520425B2 (en) 2013-03-01 2016-12-13 Semiconductor Components Industries, Llc Image sensors with small pixels having high well capacity
US9496304B2 (en) 2013-08-15 2016-11-15 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
US9054007B2 (en) * 2013-08-15 2015-06-09 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
US9231007B2 (en) 2013-08-27 2016-01-05 Semiconductor Components Industries, Llc Image sensors operable in global shutter mode and having small pixels with high well capacity
US9602750B2 (en) 2014-11-25 2017-03-21 Semiconductor Components Industries, Llc Image sensor pixels having built-in variable gain feedback amplifier circuitry
US9456157B2 (en) 2014-11-25 2016-09-27 Semiconductor Components Industries, Llc Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
JP2018513570A (ja) * 2015-03-31 2018-05-24 ダートマス カレッジ Ｊｆｅｔソースフォロアを有するイメージセンサ及びイメージセンサ画素
WO2016178837A1 (en) * 2015-05-07 2016-11-10 Finscale Inc. Semiconductor devices made of vertical planar elements and methods of their fabrication
US9515116B1 (en) * 2015-05-22 2016-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture
US9723578B2 (en) * 2015-06-09 2017-08-01 Cirrus Logic, Inc. Random telegraph signal identification and measurement
US9484373B1 (en) * 2015-11-18 2016-11-01 Omnivision Technologies, Inc. Hard mask as contact etch stop layer in image sensors
KR102466904B1 (ko) 2016-01-12 2022-11-15 삼성전자주식회사 씨모스 이미지 센서
KR102664314B1 (ko) * 2016-12-29 2024-05-14 삼성전자주식회사 이미지 센서
US9881964B1 (en) * 2017-02-08 2018-01-30 Omnivision Technologies, Inc. Image sensor with inverted source follower
CN108630713B (zh) 2017-03-17 2020-11-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10225498B2 (en) * 2017-05-16 2019-03-05 Bae Systems Information And Electronic Systems Integration Inc. pMOS/nMOS pixel design for night vision imaging sensor
TW202005067A (zh) * 2018-05-25 2020-01-16 原相科技股份有限公司 改善背照式全域快門效率的結構
TWI691098B (zh) * 2018-11-19 2020-04-11 力晶積成電子製造股份有限公司 影像感測器及其製造方法
CN109904272B (zh) * 2019-01-23 2021-02-09 杭州电子科技大学 一种高转换增益和低串扰的像素探测器
CN110534537B (zh) * 2019-08-30 2021-10-29 西安电子科技大学 一种cmos图像传感器像素结构及其制作方法
KR20220064787A (ko) 2020-11-12 2022-05-19 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 시스템
CN113629090A (zh) * 2021-08-17 2021-11-09 思特威(上海)电子科技股份有限公司 一种像素、图像传感器及其制备方法、图像采集装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563429A (en) 1994-06-14 1996-10-08 Nikon Corp. Solid state imaging device
JP3697769B2 (ja) 1995-02-24 2005-09-21 株式会社ニコン 光電変換素子及び光電変換装置
US5625210A (en) 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
JPH11164210A (ja) 1997-11-28 1999-06-18 Nikon Corp 動き検出用固体撮像装置
JP4586452B2 (ja) 2004-08-03 2010-11-24 株式会社ニコン 固体撮像装置
JP2006210680A (ja) 2005-01-28 2006-08-10 Nikon Corp 固体撮像素子
KR100851495B1 (ko) 2007-05-14 2008-08-08 매그나칩 반도체 유한회사 Ｊｆｅｔ 및 수직적으로 집적된 리셋 다이오드를 갖는이미지 센서의 소형 픽셀
US8471310B2 (en) 2011-01-11 2013-06-25 Aptina Imaging Corporation Image sensor pixels with back-gate-modulated vertical transistor

Also Published As

Publication number Publication date
US8937272B2 (en) 2015-01-20
TWI497697B (zh) 2015-08-21
DE102012213085B4 (de) 2020-04-09
US20130146747A1 (en) 2013-06-13
DE102012213085A1 (de) 2013-06-13
CN103165631B (zh) 2016-01-13
WO2013089828A1 (en) 2013-06-20
CN103165631A (zh) 2013-06-19
TW201324753A (zh) 2013-06-16

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230731