KR101244096B1 - 기화기 및 성막 장치 - Google Patents
기화기 및 성막 장치 Download PDFInfo
- Publication number
- KR101244096B1 KR101244096B1 KR1020097027029A KR20097027029A KR101244096B1 KR 101244096 B1 KR101244096 B1 KR 101244096B1 KR 1020097027029 A KR1020097027029 A KR 1020097027029A KR 20097027029 A KR20097027029 A KR 20097027029A KR 101244096 B1 KR101244096 B1 KR 101244096B1
- Authority
- KR
- South Korea
- Prior art keywords
- raw material
- vaporizer
- liquid raw
- breathable member
- vaporization
- Prior art date
Links
- 239000006200 vaporizer Substances 0.000 title claims description 131
- 239000002994 raw material Substances 0.000 claims abstract description 184
- 239000007788 liquid Substances 0.000 claims abstract description 141
- 230000008016 vaporization Effects 0.000 claims abstract description 92
- 238000009834 vaporization Methods 0.000 claims abstract description 76
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002657 fibrous material Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000000638 solvent extraction Methods 0.000 claims 2
- 239000011344 liquid material Substances 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 80
- 239000012159 carrier gas Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 38
- 238000000151 deposition Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000007599 discharging Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UCRXQUVKDMVBBM-UHFFFAOYSA-N benzyl 2-amino-3-(4-phenylmethoxyphenyl)propanoate Chemical compound C=1C=CC=CC=1COC(=O)C(N)CC(C=C1)=CC=C1OCC1=CC=CC=C1 UCRXQUVKDMVBBM-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 and the like Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007254625A JP5179823B2 (ja) | 2007-09-28 | 2007-09-28 | 気化器及び成膜装置 |
JPJP-P-2007-254625 | 2007-09-28 | ||
PCT/JP2008/064779 WO2009041189A1 (ja) | 2007-09-28 | 2008-08-20 | 気化器及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100057760A KR20100057760A (ko) | 2010-06-01 |
KR101244096B1 true KR101244096B1 (ko) | 2013-03-18 |
Family
ID=40511083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097027029A KR101244096B1 (ko) | 2007-09-28 | 2008-08-20 | 기화기 및 성막 장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5179823B2 (ja) |
KR (1) | KR101244096B1 (ja) |
CN (1) | CN101689499B (ja) |
TW (1) | TW200932368A (ja) |
WO (1) | WO2009041189A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5595795B2 (ja) * | 2009-06-12 | 2014-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置用の消耗部品の再利用方法 |
KR101084997B1 (ko) * | 2011-06-30 | 2011-11-18 | (주)그랜드 텍 | 캐리어 기체에 의한 화합물 기화용 버블러 |
JP5426616B2 (ja) * | 2011-07-15 | 2014-02-26 | 株式会社リンテック | 気化器及び該気化器を備えた液体原料気化供給装置 |
KR101721681B1 (ko) * | 2016-03-24 | 2017-03-30 | (주)티티에스 | 기화기 |
US11274367B2 (en) | 2018-07-24 | 2022-03-15 | Lintec Co., Ltd. | Vaporizer |
JP6694093B2 (ja) * | 2018-07-24 | 2020-05-13 | 株式会社リンテック | 気化器 |
JP7201372B2 (ja) * | 2018-09-11 | 2023-01-10 | 株式会社アルバック | アクリル気化器 |
US20230349041A1 (en) | 2020-07-27 | 2023-11-02 | Jiangsu Favored Nanotechnology Co., Ltd. | Raw material gasification device, film coating device, film coating apparatus and feeding method therefor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263361A (ja) * | 1994-03-25 | 1995-10-13 | Tokyo Electron Ltd | 処理装置 |
KR20000000946A (ko) * | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
JP2005057193A (ja) | 2003-08-07 | 2005-03-03 | Shimadzu Corp | 気化器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06300197A (ja) * | 1993-04-14 | 1994-10-28 | Canon Inc | 液体原料気化供給装置 |
JP4263206B2 (ja) * | 2005-11-15 | 2009-05-13 | 東京エレクトロン株式会社 | 熱処理方法、熱処理装置及び気化装置 |
-
2007
- 2007-09-28 JP JP2007254625A patent/JP5179823B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-20 CN CN2008800225671A patent/CN101689499B/zh not_active Expired - Fee Related
- 2008-08-20 KR KR1020097027029A patent/KR101244096B1/ko not_active IP Right Cessation
- 2008-08-20 WO PCT/JP2008/064779 patent/WO2009041189A1/ja active Application Filing
- 2008-09-26 TW TW097137042A patent/TW200932368A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263361A (ja) * | 1994-03-25 | 1995-10-13 | Tokyo Electron Ltd | 処理装置 |
KR20000000946A (ko) * | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
JP2005057193A (ja) | 2003-08-07 | 2005-03-03 | Shimadzu Corp | 気化器 |
Also Published As
Publication number | Publication date |
---|---|
CN101689499A (zh) | 2010-03-31 |
JP2009088157A (ja) | 2009-04-23 |
WO2009041189A1 (ja) | 2009-04-02 |
JP5179823B2 (ja) | 2013-04-10 |
TW200932368A (en) | 2009-08-01 |
KR20100057760A (ko) | 2010-06-01 |
CN101689499B (zh) | 2011-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101244096B1 (ko) | 기화기 및 성막 장치 | |
US7975993B2 (en) | Method for vaporizing liquid material capable of vaporizing liquid material at low temperature and vaporizer using the same | |
US7666260B2 (en) | Vaporizer and semiconductor processing apparatus | |
KR20080106544A (ko) | 직접 액체 분사 장치 | |
KR101240031B1 (ko) | 기화기 및 이를 이용한 성막 장치 | |
KR101176737B1 (ko) | 액체 원료 기화기 및 이를 이용한 성막 장치 | |
CN111065760B (zh) | 紊流涡旋多区前体汽化器 | |
JP2001156055A (ja) | 液体材料気化方法および装置 | |
JP5059371B2 (ja) | 気化器および成膜装置 | |
JP4764457B2 (ja) | 原料気化器及び反応処理装置 | |
WO2009122966A1 (ja) | 液体原料気化器及びそれを用いた成膜装置 | |
JP2009246173A (ja) | 気化器およびそれを用いた成膜装置 | |
JP4404674B2 (ja) | 薄膜製造装置 | |
JP2010067906A (ja) | 気化器及びそれを用いた成膜装置 | |
WO2022018965A1 (ja) | 気化器 | |
WO2007036997A1 (ja) | 液体材料供給装置、液体材料供給装置のための制御方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0105 | International application |
Patent event date: 20091224 Patent event code: PA01051R01D Comment text: International Patent Application |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20110105 Comment text: Request for Examination of Application |
|
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20120611 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20121210 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20130308 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20130308 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
LAPS | Lapse due to unpaid annual fee |