JP5426616B2 - 気化器及び該気化器を備えた液体原料気化供給装置 - Google Patents
気化器及び該気化器を備えた液体原料気化供給装置 Download PDFInfo
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- JP5426616B2 JP5426616B2 JP2011156930A JP2011156930A JP5426616B2 JP 5426616 B2 JP5426616 B2 JP 5426616B2 JP 2011156930 A JP2011156930 A JP 2011156930A JP 2011156930 A JP2011156930 A JP 2011156930A JP 5426616 B2 JP5426616 B2 JP 5426616B2
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- 239000007788 liquid Substances 0.000 title claims description 116
- 230000008016 vaporization Effects 0.000 title claims description 92
- 239000002994 raw material Substances 0.000 title claims description 88
- 239000006200 vaporizer Substances 0.000 title claims description 44
- 238000009834 vaporization Methods 0.000 claims description 79
- 239000012159 carrier gas Substances 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 41
- 238000004891 communication Methods 0.000 claims description 21
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 9
- 238000000889 atomisation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000011344 liquid material Substances 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011364 vaporized material Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
「液体原料L或いは液体原料LとキャリアガスGとの混合ガスLGを加熱するためのヒーター50が埋め込まれた円形の気化室形成用孔38を有するアウターブロック14aと、
液体原料L或いは液体原料LとキャリアガスGとの混合ガスLGを加熱するためのヒーター42が埋め込まれ、気化室形成用孔38よりもわずかに直径の小さい円筒形のインナーブロック40と、
気化室形成用孔38とインナーブロック40とで構成される気化流路44に液体原料L或いは液体原料LとキャリアガスGとの混合ガスLGを導入する導入孔14cと、
該気化流路44から気化された液体原料ガスV或いは気化された液体原料ガスVとキャリアガスGとの混合ガスVGを排出する導出孔14eがアウターブロック14aに形成されている気化器であって、
アウターブロック14aに複数の気化室形成用孔38a,38bが形成され、前記気化室形成用孔38a,38b内にインナーブロック40a,40bがそれぞれ嵌めこまれるとともに、前記気化室形成用孔38a,38bが流路連通孔44cによって連通され、気化流路44が形成されており、
流路連通孔44cが導入孔14cおよび導出口14eの開口面積に比べて小口径のオリフィスになっており、流路連通孔44cの近傍にヒーター50が設置されている」ことを特徴とする。
G・・・・キャリアガス
LG・・・混合ガス
V・・・・液体原料ガス
VG・・・混合ガス
14・・・気化器
14a・・アウターブロック
14c・・導入孔
14e・・導出孔
38・・・気化室形成用孔
40・・・インナーブロック
42・・・ヒーター
44・・・気化流路
50・・・ヒーター
Claims (2)
- 液体原料或いは液体原料とキャリアガスとの混合ガスを加熱するためのヒーターが埋め込まれた円形の気化室形成用孔を有するアウターブロックと、
前記液体原料或いは前記液体原料と前記キャリアガスとの混合ガスを加熱するためのヒーターが埋め込まれ、前記気化室形成用孔よりもわずかに直径の小さい円筒形のインナーブロックと、
前記気化室形成用孔と前記インナーブロックとで構成される気化流路に前記液体原料或いは前記液体原料と前記キャリアガスとの混合ガスを導入する導入孔と、
該気化流路から気化された液体原料ガス或いは気化された液体原料ガスと前記キャリアガスとの混合ガスを排出する導出孔が前記アウターブロックに形成されている気化器であって、
前記アウターブロックに複数の気化室形成用孔が形成され、前記気化室形成用孔内に前記インナーブロックがそれぞれ嵌めこまれるとともに、前記気化室形成用孔が流路連通孔によって連通され、前記気化流路が形成されており、
前記流路連通孔が前記導入孔および導出口の開口面積に比べて小口径のオリフィスになっており、
前記流路連通孔の近傍にヒーターが設置されていることを特徴とする気化器。 - 請求項1に記載の気化器に質量流量制御された液体原料を霧化して供給する霧化器を備えた液体原料気化供給装置であって、
前記霧化器は、前記気化器の導入孔の上流側に配設された連続気孔の多孔質盤と、
前記導入孔と前記多孔質盤との間に設けられ、前記多孔質盤に液体原料を供給する液体原料供給管と、
前記多孔質盤に向かって前記導入孔方向にキャリアガスを噴出するキャリアガス導入部とを備えていることを特徴とする液体原料気化供給装置。
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JP2011156930A JP5426616B2 (ja) | 2011-07-15 | 2011-07-15 | 気化器及び該気化器を備えた液体原料気化供給装置 |
KR1020110098795A KR101416254B1 (ko) | 2011-07-15 | 2011-09-29 | 기화기 및 상기 기화기를 구비한 액체 원료 기화 공급 장치 |
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JP2011156930A JP5426616B2 (ja) | 2011-07-15 | 2011-07-15 | 気化器及び該気化器を備えた液体原料気化供給装置 |
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JP5426616B2 true JP5426616B2 (ja) | 2014-02-26 |
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CN105716224A (zh) * | 2014-12-22 | 2016-06-29 | 株式会社堀场Stec | 气化用容器、气化器和气化装置 |
WO2017009997A1 (ja) * | 2015-07-16 | 2017-01-19 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び気化システム |
CN113692641A (zh) * | 2019-04-17 | 2021-11-23 | 株式会社威尔康 | 气化器和其制造方法 |
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JPH05106047A (ja) * | 1991-10-15 | 1993-04-27 | Mitsubishi Electric Corp | 化学気相成長装置 |
JPH09235675A (ja) * | 1995-12-28 | 1997-09-09 | Ebara Corp | 液体原料気化装置 |
JP2002217181A (ja) * | 2001-01-19 | 2002-08-02 | Japan Steel Works Ltd:The | 半導体原料供給用気化器 |
JP2003105545A (ja) * | 2001-09-27 | 2003-04-09 | Japan Pionics Co Ltd | 気化供給方法 |
JP2003347289A (ja) * | 2002-05-24 | 2003-12-05 | Stec Inc | 気化器 |
JP4299286B2 (ja) * | 2005-10-06 | 2009-07-22 | 東京エレクトロン株式会社 | 気化装置、成膜装置及び気化方法 |
JP5213341B2 (ja) * | 2007-03-20 | 2013-06-19 | 東京エレクトロン株式会社 | 気化器,気化モジュール,成膜装置 |
JP5179823B2 (ja) * | 2007-09-28 | 2013-04-10 | 東京エレクトロン株式会社 | 気化器及び成膜装置 |
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KR20130009546A (ko) | 2013-01-23 |
KR101416254B1 (ko) | 2014-07-07 |
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