CN101689499B - 气化器和成膜装置 - Google Patents
气化器和成膜装置 Download PDFInfo
- Publication number
- CN101689499B CN101689499B CN2008800225671A CN200880022567A CN101689499B CN 101689499 B CN101689499 B CN 101689499B CN 2008800225671 A CN2008800225671 A CN 2008800225671A CN 200880022567 A CN200880022567 A CN 200880022567A CN 101689499 B CN101689499 B CN 101689499B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- gasifier
- charging stock
- liquid charging
- aeration parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006200 vaporizer Substances 0.000 title abstract description 4
- 238000005273 aeration Methods 0.000 claims description 137
- 239000007788 liquid Substances 0.000 claims description 125
- 238000002309 gasification Methods 0.000 claims description 96
- 230000015572 biosynthetic process Effects 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 43
- 230000008676 import Effects 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002657 fibrous material Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 239000011344 liquid material Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 description 83
- 239000012159 carrier gas Substances 0.000 description 47
- 238000005755 formation reaction Methods 0.000 description 47
- 210000002706 plastid Anatomy 0.000 description 11
- 239000002994 raw material Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 239000000945 filler Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- -1 aluminium Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229920000914 Metallic fiber Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000010006 flight Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP254625/2007 | 2007-09-28 | ||
JP2007254625A JP5179823B2 (ja) | 2007-09-28 | 2007-09-28 | 気化器及び成膜装置 |
PCT/JP2008/064779 WO2009041189A1 (ja) | 2007-09-28 | 2008-08-20 | 気化器及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101689499A CN101689499A (zh) | 2010-03-31 |
CN101689499B true CN101689499B (zh) | 2011-11-30 |
Family
ID=40511083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800225671A Expired - Fee Related CN101689499B (zh) | 2007-09-28 | 2008-08-20 | 气化器和成膜装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5179823B2 (ja) |
KR (1) | KR101244096B1 (ja) |
CN (1) | CN101689499B (ja) |
TW (1) | TW200932368A (ja) |
WO (1) | WO2009041189A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5595795B2 (ja) * | 2009-06-12 | 2014-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置用の消耗部品の再利用方法 |
KR101084997B1 (ko) * | 2011-06-30 | 2011-11-18 | (주)그랜드 텍 | 캐리어 기체에 의한 화합물 기화용 버블러 |
JP5426616B2 (ja) * | 2011-07-15 | 2014-02-26 | 株式会社リンテック | 気化器及び該気化器を備えた液体原料気化供給装置 |
KR101721681B1 (ko) * | 2016-03-24 | 2017-03-30 | (주)티티에스 | 기화기 |
US11274367B2 (en) | 2018-07-24 | 2022-03-15 | Lintec Co., Ltd. | Vaporizer |
JP6694093B2 (ja) * | 2018-07-24 | 2020-05-13 | 株式会社リンテック | 気化器 |
JP7201372B2 (ja) * | 2018-09-11 | 2023-01-10 | 株式会社アルバック | アクリル気化器 |
US20230349041A1 (en) | 2020-07-27 | 2023-11-02 | Jiangsu Favored Nanotechnology Co., Ltd. | Raw material gasification device, film coating device, film coating apparatus and feeding method therefor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1967776A (zh) * | 2005-11-15 | 2007-05-23 | 东京毅力科创株式会社 | 半导体处理系统和气化器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06300197A (ja) * | 1993-04-14 | 1994-10-28 | Canon Inc | 液体原料気化供給装置 |
JP3004165B2 (ja) * | 1994-03-25 | 2000-01-31 | 東京エレクトロン株式会社 | 処理装置 |
KR20000000946A (ko) * | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
JP2005057193A (ja) | 2003-08-07 | 2005-03-03 | Shimadzu Corp | 気化器 |
-
2007
- 2007-09-28 JP JP2007254625A patent/JP5179823B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-20 CN CN2008800225671A patent/CN101689499B/zh not_active Expired - Fee Related
- 2008-08-20 KR KR1020097027029A patent/KR101244096B1/ko not_active IP Right Cessation
- 2008-08-20 WO PCT/JP2008/064779 patent/WO2009041189A1/ja active Application Filing
- 2008-09-26 TW TW097137042A patent/TW200932368A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1967776A (zh) * | 2005-11-15 | 2007-05-23 | 东京毅力科创株式会社 | 半导体处理系统和气化器 |
Non-Patent Citations (1)
Title |
---|
JP特开平6-300197A 1994.10.28 |
Also Published As
Publication number | Publication date |
---|---|
CN101689499A (zh) | 2010-03-31 |
JP2009088157A (ja) | 2009-04-23 |
WO2009041189A1 (ja) | 2009-04-02 |
JP5179823B2 (ja) | 2013-04-10 |
KR101244096B1 (ko) | 2013-03-18 |
TW200932368A (en) | 2009-08-01 |
KR20100057760A (ko) | 2010-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20160820 |