TW200932368A - Vaporizer, and film-forming device - Google Patents

Vaporizer, and film-forming device Download PDF

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TW200932368A
TW200932368A TW097137042A TW97137042A TW200932368A TW 200932368 A TW200932368 A TW 200932368A TW 097137042 A TW097137042 A TW 097137042A TW 97137042 A TW97137042 A TW 97137042A TW 200932368 A TW200932368 A TW 200932368A
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Taiwan
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air permeable
permeable member
gas
gasifier
vaporizer
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TW097137042A
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Chinese (zh)
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Sumi Tanaka
Munehisa Futamura
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Tokyo Electron Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

Clogging due to having a liquid material not vaporized is eliminated by uniformizing temperature of a ventilating member as a whole, at the time of making a liquid material droplet vaporize through the ventilating member. The vaporizer is provided with an inlet (354) for introducing the liquid material droplet; a board-like ventilating member (410) arranged to face the inlet and composed of a member, which generates heat when electricity is carried and has electrical resistance; a pair of electrodes (420, 430) arranged to face each other by sandwiching the ventilating member; an alternating current power supply (380) which carries electricity to the ventilating member through the pair of electrodes and makes the ventilating member generate heat; and an outlet (132) for sending to the outside a material gas generated by passing the liquid material droplet from the inlet through the inside of the ventilating member which generated heat.

Description

200932368 九、發明說明 【發明所屬之技術領域】 本發明是有關使液體原料氣化而生成原料氣體的氣化 器及具備該氣化器的成膜裝置。 【先前技術】 一般,以電介體’金屬’半導體等所構成的各種薄膜 φ 之成膜方法’例如有將有機金屬化合物等的有機原料氣體 供給至成膜室’使與氧或氨等其他的氣體反應而成膜之化 學氣相成長(CVD· Chemical Vapor Deposition)法爲人 所知。在如此的CVD法所被使用的有機原料大多是常溫 下爲液體或固體者,因此需要使有機原料氣化的氣化器。 例如上述有機原料通常是使用溶媒來稀釋,或使溶解,藉 此成爲液體原料。 使如此的液體原料氣化而生成原料氣體的氣化器,以 Φ 往是例如在氣化室内設置具有多數個孔的氣化面,以加熱 器等來加熱此氣化面,例如從噴嘴來使液體原料噴霧而形 成液滴(霧)狀者加入載流氣體的流動而吹附於氣化面, 藉此使液滴接觸於氣化面而使氣化。 在如此的氣化器中’爲了提高氣化效率,最好是使液 體原料儘可能形成小徑的液滴來吹附於氣化面。可是,越 是縮小液滴的徑,越會有不接觸於氣化面而穿過該孔之虞 。如此未完全氣化的液滴是成爲加入載流氣體的氣流來浸 入成膜室内而發生粒子的要因。例如未完全氣化的液體原 -4 - 200932368 料的液滴浸入成膜室内時若氧殘留於該成膜室,則該液滴 會氧化而成爲微細的粒子,一旦附著於基板,則會有異常 成膜或膜質不良發的問題。 因此,以往是使在氣化器生成的原料氣體通過具有微 小孔的過濾器而供給至成膜室,由外部來加熱該過濾器而 使原料氣體所含之未完全氣化的液滴在過濾器氣化。藉此 ,即使氣化器本身的氣化效率稍微差,還是可防止未完全 Q 氣化的液滴原封不動地浸入至成膜室内。 又,爲了提高氣化效率,配置具有細孔的固體充塡物 或具有多孔質體之類的微小孔的通氣性構件,由外側藉由 加熱器等的加熱手段來加熱此通氣性構件的狀態下,使液 狀原料的液滴通過而氣化(例如參照專利文獻1,2 )。藉 此,液滴接觸於通氣性構件的可能性也會增加,因此可提 高氣化效率。 專利文獻1 :特開2005-347598號公報 Ο 專利文獻2 :特開平1 0-855 8 1號公報 【發明內容】 (發明所欲解決的課題) 然而,以往爲了將液體原料的液滴氣化而使用的固體 充塡物,多孔質體,過濾器等的通氣性構件是由外部以加 熱器等的加熱手段來加熱,因此無法對通氣性構件全體均 一地供給熱量。在通氣性構件中存在例如離開加熱手段而 熱量未充分到達的部份等溫度低的部份,因此液滴未被氣 -5- 200932368 化而有產生堵塞之虞。 例如就記載於專利文獻1的氣化器而言,由於固體充 塡物是藉由其外側的加熱手段來加熱,因此固體充塡物中 相較於接近加熱手段的外周區域,中央區域的溫度較低, 難以使固體充塡物全體的溫度形成均一。如此的情況,中 央區域的溫度不會到達能夠使液體原料氣化的溫度,產生 氣化不良而堵塞固體充塡物。 Q 相對的,就記載於專利文獻2的氣化器而言,爲了不 會在多孔質體產生堵塞使液體原料效率佳地氣化,而設置 通過多孔質體内的一部份的流路,使熱媒體流通於該流路 ,藉此由多孔質體的内部來加熱。然而,僅靠此是不夠充 分的。亦即,使熱媒體流通的流路是只配置於多孔質體内 的一部份,因此無法對多孔質體全體均一地供給熱量。所 以,部份地發生氣化不良,無法完全消除多孔質體堵塞之 虞。又,若要對多孔質體全體均一地供給熱量,則考量在 〇 多孔質體全體到處形成流路,但如此一來構造不僅變得複 雜,且原料氣體所能接觸的表面積會減少,多孔質體的壓 力損失會變大。這將無法取得所定流量的原料氣體。 於是,本發明是有鑑於上述問題而硏發者,其目的是 在於提供一種使液體原料的液滴通過通氣性構件而氣化# ,可使通氣性構件全體的溫度形成均一,可防止未完全氣 化而發生堵塞的情形之氣化器及成膜裝置。 (用以解決課題的手段) -6- 200932368 爲了解決上述課題,若根據本發明的某觀點,則可提 供一種氣化器,其特徵係具備: 液體原料吐出手段,其係使液體原料形成液滴狀而吐 出; 導入口,其係導入上述液滴狀的液體原料; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; q 一對的電極,其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源’其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口’其係使來自上述導入口的上述液滴狀的液體 原料通過發熱的上述通氣性構件的内部而氣化生成的原料 氣體送出至外部。 爲了解決上述課題,若根據本發明的別的觀點,則可 〇 提供一種成膜裝置’係具備由使液體原料氣化而生成原料 氣體的氣化器來導入原料氣體而對被處理基板進行成膜處 理的成膜室之成膜裝置,其特徵爲: 上述氣化器係具備: 液體原料吐出手段,其係使液體原料形成液滴狀而吐 出; 導入口’其係導入上述液滴狀的液體原料; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; -7- 200932368 一對的電極’其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源’其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口’其係使來自上述導入口的上述液滴狀的液體 原料通過發熱的上述通氣性構件的内部而氣化生成的原料 氣體送出至外部。 Φ 若根據如此的本發明,則因爲是以具有藉由通電來發 熱的電阻之構件來構成通氣性構件,所以可經由一對的電 極來將通氣性構件直接通電,藉此可使通氣性構件全體發 熱。藉由因爲可使全體通氣性構件的溫度形成均一,所以 只要在通氣性構件通過液滴狀的液體原料,便可使液滴全 部氣化。藉此,比起以往更能使氣化效率提升,且可防止 部份的溫度降低所造成的氣化不良,因此可防止通氣性構 件的堵塞。 ❹ 又,上述一對的電極可分別構成例如在上述通氣性構 件之對向於上述導入口的表側表面及其背側表面以能夠覆 蓋各面的方式接合設置,在上述一對的電極分別形成複數 的貫通孔。藉此,一對的電極接觸於通氣性構件的面積大 ,所以可效率佳地使發熱。因此,例如在將通氣性構件通 電時可使全體迅速地上昇至所望的溫度。 又,可將上述通氣性構件構成爲矩形板狀,使上述一 對的電極分別在上述通氣性構件之互相對向的側面以能夠 覆蓋各面的方式接合設置。藉此’相較於在對向於導入口 -8- 200932368 的表側表面及背側表面設置電極時,可使液滴狀的液體原 料的流動容易程度、亦即傳導性提升。 又,上述通氣性構件是例如使用由多孔質材所構成的 電阻發熱體來構成。此情況,多孔質材是含碳化矽者爲佳 。又,上述通氣性構件可使用由纖維材所構成的電阻發熱 體來構成。 爲了解決上述課題,若根據本發明的別的觀點,則可 0 提供一種氣化器,係連接至使液體原料氣化而生成原料氣 體的其他氣化器之氣化器,其特徵係具備: 導入口,其係導入在上述其他氣化器所生成的原料氣 體, 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 一對的電極,其係以能夠夾入上述通氣性構件的方式 來對向配置; 〇 電源’其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口’其係使從上述導入口導入之來自上述其他氣 化器的原料氣體通過發熱的上述通氣性構件的内部而送出 至外部。 若根據如此的本發明,則可在以具有藉由通電來發熱 的電阻的構件所構成之氣化器的通氣性構件中通過在其他 的氣化器所生成的原料氣體,藉此在其他的氣化器未完全 氣化的液滴也能夠在本發明的氣化器使氣化。 -9- 200932368 爲了解決上述課題,若根據本發明的別的觀點,則可 提供一種成膜裝置,係具備由使液體原料氣化而生成原料 氣體的氣化器來導入原料氣體而對被處理基板進行成膜處 理的成膜室之成膜裝置,其特徵爲: 上述氣化器係藉由使液體原料氣化而生成原料氣體的 第1氣化器及連接的第2氣化器所構成, 上述第2氣化器係具備: 0 導入口 ’其係導入在上述第1氣化器所生成的原料氣 體; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 一對的電極,其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源,其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 G 送出口 ’其係使從上述導入口導入之來自上述第1氣 化器的原料氣體通過發熱的上述通氣性構件的内部而送出 至上述成膜室。 若根據如此的本發明,則可在以具有藉由通電來發熱 的電阻的構件所構成之第2氣化器的通氣性構件中通過在 第1氣化器所生成的原料氣體,藉此在第i氣化器未完全 氣化的液滴也能夠在第2氣化器使氣化。藉此,可防止在 成膜室等中液體原料的液滴與原料氣體一起進入。 -10- 200932368 [發明的效果] 若根據本發明,則使液體原料的液滴通過通氣性 而氣化時,可藉由將通氣性構件直接通電來使通氣性 全體發熱。藉此可使全體通氣性構件的溫度形成均一 此可使液滴全部氣化。藉此,比起以往更能使氣化效 升,且可防止部份的溫度降低所造成的氣化不良’因 防止通氣性構件的堵塞。 ❹ 【實施方式】 以下一邊參照圖面一邊詳細說明有關本發明的較 施形態。另外,在本說明書及圖面中,有關實質上具 一機能構成的構成要素賦予同一符號,藉此省略重複 (第1實施形態的成膜裝置) 〇 首先,一邊參照圖面一邊說明有關本發明的第1 形態的成膜裝置。圖1是用以說明第1實施形態的成 置的槪略構成例。圖1所示的成膜裝置10〇是在被處 板例如半導體晶圓(以下簡稱爲「晶圓」)W上藉由 法來形成金屬氧化物膜者,具備:供給由含有Hf ( 的有機化合物所構成的液體原料之液體原料供給源i 及供給載流氣體的載流氣體供給源1 2 0,及使從液體 供給源1 1 〇供給的液體原料氣化而生成原料氣體之氣 3〇〇’及利用氣化器300所生成的原料氣體在晶圓w 構件 構件 ,因 率提 此可 佳實 有同 說明 實施 膜裝 理基 CVD 鈴) 10 - 原料 化器 上例 -11 - 200932368 如形成Hf02膜之成膜室200,及控制成膜裝置 之控制部1 40。另外,載流氣體,例如可使用 性氣體。 液體原料供給源1 1 0與氣化器3 0 0是以液 配管1 1 2來連接,載流氣體供給源丨2〇與氣化 載流氣體供給配管122來連接,氣化器300與 是以原料氣體供給配管1 3 2來連接。而且,在 〇 給配管π 2中具備液體原料流量控制閥Ϊ丨4, 供給配管1 22中具備載流氣體流量控制閥1 24 體供給配管1 3 2中具備原料氣體流量控制閥i 體原料流量控制閥1 1 4,載流氣體流量控制閥 料氣體流量控制閥134是根據來自控制部140 來調整各個的開度。控制部1 4 0較理想是按照 原料供給配管1 1 2的液體原料的流量,流動於 給配管122的載流氣體的流量,及流動於原料 ^ 营1 3 2的原料氣體的流量來輸出控制信號。 成膜室200是例如具有大略圓筒狀的側壁 與頂壁210及底壁212所包圍的内部空間中, 置晶圓W的基座222。側壁、頂壁210及底壁 以鋁’不鏽鋼等的金屬所構成。基座222是藉 複數個支持構件224 (在此是僅圖示1根)來 ’在基座222中埋入加熱器226,可藉由控制 供給至該加熱器226的電力來調整載置於基座 圓W的溫度。 1 00的各部 Ar等的惰 體原料供給 器3 0 0是以 成膜室200 液體原料供 在載流氣體 ,在原料氣 3 4,該等液 124 ,及原 的控制信號 流動於液體 載流氣體供 氣體供給配 ,在此側壁 具備水平載 2 1 2是例如 由圓筒狀的 支持。並且 從電源228 2 2 2上的晶 -12- 200932368 在成膜室200的底壁212形成有排氣口 230,在此排 氣口 230連接排氣系232。然後,可藉由排氣系232來將 成膜室200内減壓至所定的真空度。 在成膜室200的頂壁21〇安裝有淋浴頭240。此淋浴 頭240是連接原料氣體供給配管132,經由此原料氣體供 給配管132來將在氣化器300所生成的原料氣體導入至淋 浴頭240内。淋浴頭240是具有内部空間242,及連通至 ❹ 該内部空間242的多數個氣體吐出孔244。經由原料氣體 供給配管1 3 2來導入至淋浴頭2 4 0的内部空間2 4 2之原料 氣體是由氣體吐出孔244來朝向基座222上的晶圓 出。 在本實施形態的成膜裝置100中,液體原料供給源 110是積存液體原料,例如 HTB ( HAFNIUM TERT- BUTOXIDE’ 丁氧給),且將此液體原料經由液體原料供 給配管1 12來往氣化器300送出。 Q 如此構成的成膜裝置100是以來自氣化器300的原料 氣體能夠像其次那樣的方式供給。一旦來自液體原料供給 源1 1 〇的液體原料經由液體原料供給配管1 1 2,且來自載 流氣體供給源1 20的載流氣體經由載流氣體供給配管1 22 來供給至氣化器300,則液體原料會與載流氣體一起形成 液滴狀而吐出至設於氣化器300内的氣化室,該液體原料 會氣化而生成原料氣體。在氣化器300所生成的原料氣II 是經由原料氣體供給配管132來供給至成膜室2〇〇 ,對$ 膜室200内的晶圓W實施所望的製程處理。 -13- 200932368 可是,在上述那樣的成膜裝置100的氣化器300 無法使液體原料完全氣化時,液體原料的液滴的一部 混入至原料氣體而送出至原料氣體供給配管132,恐 入成膜室200内之虞。如此浸入成膜室200内的液體 的液滴會成爲粒子使形成於晶圓W上的膜的膜質低 要因。若根據本實施形態的氣化器3 00,則如以下說 可有效地使液體原料的液滴全部氣化而生成良質的原 〇 體。 (第1實施形態的氣化器的構成例) 其次,一邊參照圖面一邊說明有關本發明的第1 形態的氣化器3 00的構成例。圖2是表示第1實施形 氣化器3 00的槪略構成例的縱剖面圖。此氣化器3 00 分成:使液體原料氣化的氣化部3 00B,及使液體原 成液滴狀來供給至該氣化部3 00B的液體原料供給部 ❹ 首先,說明有關液體原料供給部300A的構成。 液體原料供給部3 00A設有從上面往内部垂直方向延 液體原料流路3 1 0,設有從側面往内部水平方向延伸 流氣體流路3 1 2。在液體原料流路3 1 0的一端連接液 料供給配管112,在載流氣體流路312的一端連接載 體供給配管122。 在液體原料流路310的他端,具備吐出噴嘴316 液體原料吐出手段,其係具有使液體原料形成液滴狀 中, 份會 有浸 原料 落的 明, 料氣 實施 態的 大致 料形 3 00A 在該 伸的 的載 體原 流氣 作爲 而吐 -14- 200932368 出的吐出口 314。此吐出噴嘴316是例如構成前端細小( 在圖2是省略該構成),以其前端的吐出口 314能夠朝向 氣化部3 00B的内部空間之方式配置。 吐出噴嘴316的吐出口 314的直徑是按照被供給至氣 化部300B内的液體原料的液滴的目標大小來決定。在氣 化部300B内,爲了使液滴狀的液體原料確實地氣化,液 滴的大小是小較有利,因此吐出口 3 1 4的直徑也是以較小 〇 爲理想。但,若液滴的大小過小,則恐會有使液滴氣化而 取得的原料氣體的流量不足之虞。較理想是考量該等的點 來決定吐出口 314的直徑。 吐出噴嘴3 1 6的構成材料,較理想是對有機溶媒具有 耐性的聚醯亞胺樹脂等的合成樹脂或不鏽鋼或鈦等的金屬 。並且,藉由使用合成樹脂來構成吐出噴嘴316,可使熱 不會從周圍傳導至所被吐出之前的液體原料。而且,在使 用聚醯亞胺樹脂之下,液體原料的殘渣(析出物)會難附 Q 著於吐出噴嘴316,防止噴嘴的堵塞。 並且,在液體原料供給部3 00 A的内部,以能夠包圍 吐出噴嘴3 1 6的前端之方式配設有載流氣體噴射部3 1 8。 載流氣體噴射部3 1 8是被連接至上述載流氣體流路3 1 2的 他端,構成使來自載流氣體流路312的載流氣體能夠與液 體原料一起朝向氣化部300B噴出。 具體而言,載流氣體噴射部318是形成包圍吐出噴嘴 316的前端之杯狀,其底部形成有載流氣體噴出口 3 20。 載流氣體噴出口 320是形成可在吐出噴嘴316的前端的吐 -15- 200932368 出口 314的附近包圍該吐出口 314。藉此可從 的周圍噴出載流氣體,使從吐出口 314吐出的 液滴確實地朝向氣化部3 0 0 B飛行,可安定地 部3 00B内之後述的通氣性構件410。 其次,說明有關氣化部3 00B的構成。此| 是具有在内部配設後述的氣化手段400之大略 (casing)。外箱是由筒狀的側壁構件330及 φ 側壁構件3 3 0上下的頂壁構件3 32及底壁構件 。該等側壁構件330,頂壁構件332,底壁構f 別例如以鋁,不鏽鋼等的金屬所構成》 側壁構件3 30及頂壁構件3 32是在夾著0 狀態下使用螺栓等的結合構件338Α、338Β來 構件330及底壁構件334是在夾著〇型環340 用螺栓等的結合構件3 4 2 A、3 4 2 Β來結合。藉 部3 0 0 B的内部空間的氣密性。 〇 在頂壁構件3 32形成有導入液體原料的液 354,在底壁構件334形成有送出原料氣體的送 在側壁構件3 3 0的内側設有使從液體原料供給 給的液滴狀的液體原料氣化而生成原料氣體, 400,藉由此氣化手段400將氣化部300B的内 成上側空間3 5 0及下側空間3 5 2。在上側空間 口 354導入液體原料的液滴,吹附至氣化手段 ,液體原料的液滴通過氣化手段400氣化取得 會經由下側空間3 52來從送出口 3 5 6送出。 吐出口 3 1 4 液體原料的 吹附於氣化 氣化部3 00B 筒狀的外箱 分別設於該 3 3 4所構成 中3 34是分 型環3 36的 結合,側壁 的狀態下使 此保持氣化 滴之導入口 出口 3 5 6。 部300A供 之氣化手段 部空間區劃 3 5 0從導入 400 。然後 的原料氣體 -16- 200932368 本實施形態的氣化手段400是具備:藉由通電發熱來 使液滴狀的液體原料氣化之通氣性構件410,及以能夠夾 著該通氣性構件410的上下之方式來對向配置之一對的第 1電極(表側電極)420及第2電極(背側電極)430,及 分別對該等各電極420、430供給用以對通氣性構件410 通電而發熱的電力之第1給電線440,第2給電線450。 通氣性構件4 1 0是具有使液滴狀的液體原料流通的通 Q 氣性且具有藉由通電來發熱的電阻之板狀構件。如此的通 氣性構件4 1 0是例如藉由碳化矽(S i C ),導電性陶瓷等 的多孔質電阻體所構成。在此是舉藉由碳化矽(SiC )來 將通氣性構件4 1 0形成例如圖3所示那樣的圓板狀時爲例 〇 如此的通氣性構件4 1 0是如圖2所示在通氣性構件 410的表側表面以能夠覆蓋該面全體的方式來接合圓板狀 的第1電極4 2 0,且在通氣性構件4 1 0的背側表面以能夠 〇 覆蓋該面全體的方式來接合圓板狀的第2電極430。 另外,在第1實施形態的氣化部300B中是將各電極 420、430設於通氣性構件410的表背的表面全體,因此對 於液滴狀的液體原料的流動而言堵塞了通氣性構件410。 因此’在第1電極420’例如圖4所示形成複數的貫通孔 422’且在第2電極430亦如圖5所示形成複數的貫通孔 432,液滴狀的液體原料的流動可經由貫通孔422,貫通孔 432來通過至通氣性構件410。 亦即,可使從吐出噴嘴316吐出’乘於載流氣體的流 -17- 200932368 動而飛行於上側空間3 50而來的液滴狀的液體原料經由複 數的貫通孔422來引導至通氣性構件41〇的表側表面。並 且’可使液滴狀的液體原料通過通氣性構件410而氣化生 成的原料氣體經由複數的貫通孔432來引導至下側空間 3 52 ° 另外,該等貫通孔422,貫通孔432的數量、大小、 配置寺’並非限於圖2、圖4、圖5所示者。例如貫通孔 〇 422的數量與貫通孔432的數量可爲相同或相異。有關配 置方面亦可將貫通孔422與貫通孔43 2配置成同軸狀,或 錯開配置。爲了使液滴狀的液體原料儘可能更多到達通氣 性構件4 1 0的表側表面,較理想是擴大形成於第1電極 420的貫通孔422的開口徑,或增多貫通孔422的數量。 同樣地’爲了爲了使通過通氣性構件4 1 0的原料氣體不停 滯送至下側空間3 52,較理想是擴大形成於第2電極430 的貫通孔432的開口徑,或增多貫通孔432的數量。 〇 但,又以通氣性構件410全體能夠不偏倚地發熱,較 理想是按照通氣性構件4 1 0的電氣特性或大小等來設定貫 通孔422、43 2的開口徑或數量,而來供給電力至通氣性 構件4 1 0。 又,如圖2所示,在第1電極420的外緣部連接有第 1給電線440。第1給電線440是垂直延伸至下方,經由 第1内部端子3 64來連接至從底壁構件3 34突出至下方設 置的第1外部端子366。並且’在第2電極430的外緣部 連接有第2給電線450。第2給電線45 0是延伸至下方, 18 - 200932368 經由第2内部端子374來連接至從底壁構件334突出至下 方設置的第2外部端子376。在第1外部端子366及第2 外部端子376是例如連接交流電源380。 另外,由於通氣性構件410,第1電極420,第2電 極430’第1給電線440,第2給電線450是導電性構件 ,因此該等是與側壁構件330等的外箱絕緣。具體而言, 通氣性構件410,第1電極420,第2電極430是以能夠 0 包圍該等的外周之方式,藉由設於與側壁構件330之間的 絕緣保持構件344來一面絕緣一面予以固定。又,第1電 極420是藉由與頂壁構件3 3 2之間的環狀絕緣夾持構件 346來一面絕緣一面予以固定。 又,第1給電線440是藉由絕緣保持構件344,絕緣 套管(sleeves ) 442來予以絕緣。第2給電線450是藉由 絕緣保持構件344,絕緣套管452來予以絕緣。 在此,一邊參照圖2 —邊說明有關用以從外部供給電 Q 力至第1電極420,第2電極430的端子構造。如圖2所 示,在底壁構件334設有用以對第1電極420供給電力的 第1端子部360,及用以對第2電極43 0供給電力的第2 端子部370。 第1端子部3 60是由外殻構件3 6 8及第1内部端子 364所構成,該外殻構件368是在使第1外部端子366的 前端突出至下方的狀態下収容第1外部端子366,由絕緣 材所構成,該第1内部端子364是在連接至第1外部端子 3 66的狀態下突出至外殻構件368的上方設置。又’第2 -19- 200932368 端子部370是由外殻構件378及第2内部端子374所構成 ,該外殼構件3 78是在使第2外部端子3 76的前端突出至 下方的狀態下収容第2外部端子376,由絕緣材所構成, 該第2内部端子374是在連接至第2外部端子376的狀態 下突出至外殼構件378的上方設置。外殻 (housing )構件 368及外殻構件378皆是被嵌合於在底壁構件334所形成 的安裝孔,藉由奸焊等來密接固定。藉此保持氣化部 φ 3 00B的内部空間的氣密性。 在如此構成的端子構造中,一旦固定第1端子部360 及第2端子部370的底壁構件334安裝於側壁構件330, 則第1内部端子364會與第1端子部360 —起,第2内部 端子3 74會與第2端子部370 —起,分別進入側壁構件 3 3 0内部,分別電性連接至第1給電線440的他端及第2 給電線45 0的他端。藉此,組裝氣化器時的端子安裝變得 容易。另外,端子構造並非限於上述者,例如亦可裝卸自 〇 如地設於底壁構件3 3 4或側壁構件3 3 0。 如此的氣化手段400是藉由交流電源3 80來對第1外 部端子3 66及第2外部端子3 76供給交流電流,藉此可經 由第1電極420及第2電極43 0來使通氣性構件410直接 通電。藉此,可藉由控制交流電源380的輸出値來直接調 整通氣性構件4 1 0的發熱溫度。 並且,在通氣性構件4 1 0的附近設有溫度感測器頭例 如熱電耦3 90等的溫度感測器,藉此在熱電耦3 90所產生 的電壓變化例如可藉由外部的計測器3 92來測定,該測定 -20- 200932368 資料會被傳送至控制部140。控制部140可根據自計測器 3 92接受的資料來控制交流電源3 8 0的輸出値,而調整通 氣性構件4 1 〇的發熱溫度。 (成膜裝置的動作) 一邊參照圖面一邊說明有關以上那樣構成的本實施形 態的成膜裝置100的動作。藉由氣化器300來生成原料氣 φ 體時’調整液體原料流量控制閥1 1 4的開度,使所定流量 的液體原料經由液體原料供給配管1 1 2來從液體原料供給 源110供給至氣化器300。同時,調整載流氣體流量控制 閥124的開度,使所定流量的載流氣體經由載流氣體供給 配管122來從載流氣體供給源120供給至氣化器3 00。 並且,在氣化器300是由交流電源380輸出交流電力 來使通氣性構件4 1 0發熱。此時,藉由計測器3 92來測定 產生於熱電耦390的電壓亦即通氣性構件410的溫度。然 Q 後控制部1 4 0會根據該測定結果來控制交流電源3 8 〇而將 通氣性構件4 1 0調整成至少比液體原料的氣化溫度更高的 所定溫度。 經由液體原料供給配管1 1 2來供給至氣化器3 00的液 體原料是經由液體原料流路310來到達吐出噴嘴316,從 吐出口 314成液滴狀吐出。並且,與液體原料的供給—起 經由載流氣體供給配管1 2 2來供給至氣化器3 〇 〇的載流氣 體是經由載流氣體流路312來到達載流氣體噴射部318, 從載流氣體噴出口 320朝向氣化部300B的上側空間350 200932368 噴射。由於如此被噴射的載流氣體是通過吐出噴嘴316的 吐出口 314附近,因此可使從吐出口 314連續吐出的液體 原料的液滴加入其流動來安定地飛行於氣化手段400的方 向。 進入氣化部3 00B的上側空間3 5 0内而吹附於氣化手 段400之液滴狀的液體原料是經由第1電極420的貫通孔 422來進入通氣性構件410。此時,通氣性構件410是被 〇 電阻發熱而調整成比液體原料的氣化溫度更高的所定溫度 。因此,進入通氣性構件4 1 0的液滴狀的液體原料是瞬間 氣化而取得原料氣體。 另外,第1電極420是緊貼於發熱的通氣性構件410 ,所以其溫度是與通氣性構件4 1 0的溫度大致相等。因此 ,雖可想像液滴狀的液體原料的一部份會接觸於第1電極 420,但即使是如此的情況,還是會與接觸於通氣性構件 410的表面時同樣,瞬間氣化而加入載流氣體的流動經由 ❹ 貫通孔422來引導至通氣性構件410。 如此一來,液滴狀的液體原料通過通氣性構件4 1 0而 氣化生成的原料氣體是與載流氣體一起通過通氣性構件 4 1 0來穿過至背側表面,然後,經由下側空間3 5 2及送出 口 356來送出至原料氣體供給配管132。 被送出至原料氣體供給配管132的原料氣體會被供給 至成膜室200,導入至淋浴頭24〇的内部空間242,從氣 體吐出孔244往基座222上的晶圓W吐出。然後,在晶 圓W上形成所定的膜例如Hf02膜。另外,被導入至成膜 -22- 200932368 室200的原料氣體的流量可藉由控制原料氣體供給配管 1 3 2所具備的原料氣體流量控制閥1 3 4的開度來調整。 若像以上那樣利用第1實施形態,則由於可將通氣性 構件410直接通電而發熱,因此可使通氣性構件410全體 發熱。藉此,可使全體通氣性構件410的溫度形成均一, 因此只要在通氣性構件410通過液滴狀的液體原料,便可 使液滴全部氣化。藉此,比起以往更能使氣化效率提升。 Q 又,由於可防止部份的溫度降低所造成的氣化不良,因此 可防止通氣性構件的堵塞。所以,可延長包含通氣性構件 410的氣化手段400的維修週期。藉此,亦可使成膜裝置 100的生產能力提升。 又,由於第1實施形態的各電極420、430是分別以 能夠在例如通氣性構件4 1 0的表側表面及背側表面覆蓋各 面的方式接合設置,因此各電極42 0、430接觸於通氣性 構件4 1 0的面積大,所以可使效率佳地發熱。因此,例如 〇 將通氣性構件410通電時可使全體迅速地上升至所望的溫 度。 並且,相較於由外部來加熱用以使液體原料氣化的構 件之以往的構成,本實施形態之用以對通氣性構件4 1 0供 給電力的構成是配置電極的簡單構成。因此,可降低氣化 器300的製造成本,且其維修成本也可低減。又,若利用 本實施形態,可不需要在通氣性構件410的内部配設熱媒 體的流路,因此原料氣體的流路不會被遮斷,可將氣化手 段4 00的壓力損失壓制到最小限度。其結果,可將充分流 -23- 200932368 量的原料氣體導入至成膜室200。 另外,使通氣性構件410例如藉由熱電耦390等的溫 度感測器來直接監視通氣性構件4 1 0的溫度,根據該被測 定的溫度,藉由控制部1 40來控制交流電源3 80的輸出値 ,藉此可正確地控制通氣性構件410的溫度。因此,不會 有使通氣性構件4 1 0全體的溫度降低的情形,且可均一地 保持通氣性構件410全體的溫度。因此,可使通過通氣性 Q 構件410之液滴狀的液體原料確實地氣化。 又,若利用第1實施形態的氣化器300,則可按照液 體原料的種類或量及液滴的大小來控制通氣性構件4 1 0的 發熱溫度,因此可更效率佳地使液體原料確實地氣化。 另外,在第1實施形態中,氣化部300B是將通氣性 構件形成圓板狀,以使一對的電極能夠分別在通氣性構件 之對向於導入口的表側表面及其背側表面覆蓋各面的方式 接合設置構成,但並非限於此。例如氣化部亦可將通氣性 〇 構件構成矩形板狀,以使一對的電極能夠分別在通氣性構 件之彼此對向的側面覆蓋各面的方式接合設置。 (第1實施形態的氣化器的變形例) 一邊參照圖面一邊說明有關如此的氣化器3 00的變形 例。圖6是表示第1實施形態的變形例的氣化器3 00的槪 略構成例的縱剖面圖。圖7是圖6所示的氣化器的A-A剖 面圖。圖6所示的氣化器3 00與圖1所示的氣化器3 00是 僅氣化部3 00B的構成相異。具體而言,圖6所示的氣化 -24- 200932368 器3 00是氣化手段402的構成與圖1所示的氣化手段400 的構成相異,除此以外則是與圖1所示的氣化器3 00共通 ,因此對於發揮同一機能的部份賦予同一符號,省略其詳 細的說明。 圖6所示的氣化手段40 2是具備:藉由通電來發熱而 使液滴狀的液體原料氣化之通氣性構件4 1 2,及以能夠夾 著該通氣性構件412雙方的側端部之方式對向配置的一對 Q 的第1電極424及第2電極434,及分別對各電極424、 43 4供給用以使通氣性構件4 1 2通電而發熱的電力之第1 給電線4 4 0,第2給電線4 5 0。 圖6所示的通氣性構件4 1 2是與圖2所示的通氣性構 件4 1 0同樣,具有通過液滴狀的液體原料流的通氣性,且 具有藉由通電來發熱的電阻之板狀構件。在此是舉一藉由 碳化矽(S i C )來將通氣性構件4 1 2形成例如圖7所示那 樣的矩形形狀時。 〇 如此的通氣性構件4 1 2是如圖7所示般在通氣性構件 412的一側面以能夠覆蓋該面全體的方式來接合長狀的第 1電極(一側面電極)4 2 4,且在通氣性構件4 1 2的他側面 以能夠覆蓋該面全體的方式來接合長狀的第2電極(他側 面電極)434。藉由如此的構成,對於液滴狀的液體原料 流而言不會有阻塞通氣性構件410的情況,可配置各電極 424、434。藉此,相較於在通氣性構件的表側表面及背側 表面設置電極時,可使液滴狀的液體原料的流動容易程度 、亦即傳導性提升。因此,可使更多的液滴狀的液體原料 -25- 200932368 在短時間氣化,所以可生成更多的原料氣體。 可是,上述第1實施形態的通氣性構件410,通氣性 構件412皆是板狀構件。有關此板狀構件的厚度是在可阻 止液滴狀的液體原料通過的範圍內,較薄者較能夠降低氣 化手段400、402的壓力損失。如此一來可導入更多流量 的原料氣體至成膜室200。 又,氣化手段400、402亦可使用比板狀的通氣性構 〇 件4 1 0、4 1 2更薄的構件,例如薄板狀的構件。此情況, 可使用纖維材來構成薄板狀的構件。薄板狀的構件可爲織 布或不織布。又,如此的纖維材可使用金屬纖維或碳纖維 〇 另外’上述第1實施形態的氣化器300是說明有關一 體構成液體原料供給部3 00A及氣化部3 00B的情況時,但 並非限於此’亦可個別構成液體原料供給部3 0 0 A及氣化 部300B。該情況,液體原料供給部30 0A可更換至其他的 Ο 氣化器來構成’將氣化部300B設爲單體的氣化器。亦即 ’以在其他的氣化器所生成的原料氣體能夠從只由氣化部 300B的構成所形成的氣化器的導入口 3 54來導入之方式 連接。藉此’在藉由通電來使發熱的通氣性構件41〇中通 過在其他的氣化器(例如亦包含既存的氣化器或以往的氣 化器等氣化效率差的氣化器)所生成的原料氣體,藉此在 其他的氣化器未完全氣化的液滴也可在由第1實施形態的 氣化部3 00B的構成所形成的氣化器使氣化。 -26- 200932368 (第2實施形態的成膜裝置) 其次,一邊參照圖面一邊說明有關本發明的第2實施 形態的成膜裝置。圖8是用以說明第2實施形態的成膜裝 置的槪略構成例的圖。在此是說明有關藉由第1氣化器 304及以連接配管3 06連接的第2氣化器30 8來構成利用 於成膜裝置的氣化器3 02時。另外,在圖8中有關氣化器 的構成以外是與圖1所示者同樣,因此對於具有同一機能 Q 的部份則是賦予同一符號,而省略其詳細的說明。 具體而言,第2實施形態的氣化器302是具備:使從 液體原料供給源1 1 0供給的液體原料氣化而生成原料氣體 之第1氣化器3 04、及在第1氣化器3 04所生成的原料氣 體的吐出口經由連接配管3 06來與導入口連接之第2氣化 器308’而使從第2氣化器308的吐出口吐出的原料氣體 能夠經由原料氣體供給配管1 3 2來供給至成膜室。 將第2實施形態的第2氣化器308的構成例如顯示於 〇 圖9。第2氣化器308的構成是只由第1實施形態的氣化 器300中的氣化部300B的構成所形成的氣化器。圖9所 示的氣化器是只由圖2所示的氣化部300B的構成所形成 的氣化器。又,第2氣化器308亦可爲圖10所示的氣化 器。圖10所示的氣化器是只由圖6所示的氣化部300B的 構成所形成的氣化器。因此,第2氣化器308是與圖2或 圖6所示的氣化部300B同様的構成,因此對於具有同一 機能的部份附上同一符號而省略詳細的說明。 相對的’第1氣化器304只要是使從液體原料供給源 -27- 200932368 1 1 〇供給的液體原料氣化而生成原料氣體的氣化器 其構成或種類等不拘,可爲以往的氣化器。 若根據如此的本發明,則可在第2氣化器3 0 8 第1氣化器304所生成的原料氣體通過藉由通電來 的通氣性構件,藉此在第1氣化器304未完全氣化 也可在第2氣化器308使氣化。因此,可防止在 200等中液體原料的液滴與原料氣體一起進入。 Q 以上一邊參照圖面一邊說明有關本發明的較佳 態,但當然本發明並非限於該例。只要是該當業者 在申請專利範圍所記載的範疇内,思及各種的變更 正例,當然該等亦隸屬於本發明的技術範圍。 例如,本發明亦可適用於MOCVD裝置,電漿 置,ALD (原子層成膜)裝置,LP-CVD (分批式 ’橫型,小型分批式)等所使用的氣化器,氣化模 等的成膜裝置。 〇 [產業上的利用可能性] 本發明是可適用於使液體原料氣化而生成原料 氣化器及該等的成膜裝置。 【圖式簡單說明】 圖1是表示本發明的第1實施形態的成膜裝置 構成例。 圖2是表示同實施形態的氣化器的構成例的縱 即可, 中使在 使發熱 的液滴 成膜室 實施形 ,便可 例或修 CVD裝 ,縱型 組及該 氣體的 的槪略 剖面圖 -28- 200932368 圖3是圖2所示的通氣性構件的平面圖。 圖4是圖2所示的第1電極的平面圖。 圖5是圖2所示的第2電極的平面圖。 圖6是表示同實施形態的氣化器的變形例的縱剖面圖 〇 圖7是圖6所示的A-A剖面圖。 〇 圖8是表示本發明的第2實施形態的成膜裝置的槪略 構成例。 圖9是表示同實施形態的氣化器的構成例的縱剖面圖 〇 圖1 〇是表示同實施形態的氣化器的變形例的縱剖面 圖。 【主要元件符號說明】 Ο 1〇〇:成膜裝置 u 〇 :液體原料供給源 1 1 2 :液體原料供給配管 1 1 4 :液體原料流量控制閥 120:載流氣體供給源 122 :載流氣體供給配管 124 :載流氣體流量控制閥 132:原料氣體供給配管 132 :送出口 -29- 200932368 1 3 4 :原料氣體流量控制閥 1 4 0 :控制部 200 :成膜室 2 1 0 :頂壁 212 :底壁 222 :基座 224 :支持構件 φ 2 2 6 :加熱器 2 2 8 :電源 2 3 0 :排氣口 2 3 2 :排氣系 240 :淋浴頭 2 4 2 :内部空間 244 :氣體吐出孔 3 0 0 :氣化器 〇 3 0 0 A :液體原料供給部 3 00B :氣化部 3 0 2 :氣化器 3 0 4 :第1氣化器 306 :連接配管 308:第2氣化器 3 1 0 :液體原料流路 3 1 2 :載流氣體流路 3 1 4 :吐出口 -30- 200932368 3 16: 3 18: 320 : 3 3 0 : 3 3 2 : 3 34 : 336、200932368 IX. [Technical Field] The present invention relates to a vaporizer for vaporizing a liquid material to generate a material gas, and a film forming apparatus including the gasifier.  [Prior Art] In general, A film forming method of various thin films φ composed of a dielectric 'metal' semiconductor or the like, for example, an organic material gas such as an organic metal compound is supplied to a film forming chamber to react with other gases such as oxygen or ammonia to form a film. The CVD Chemical Vapor Deposition method is known. Most of the organic raw materials used in such a CVD method are liquid or solid at normal temperature. There is therefore a need for a gasifier that vaporizes organic feedstock.  For example, the above organic raw materials are usually diluted with a solvent. Or dissolve, This becomes a liquid raw material.  a gasifier that vaporizes such a liquid raw material to form a raw material gas, Φ is, for example, a gasification surface having a plurality of holes in the gasification chamber, Heating the gasification surface with a heater or the like, For example, a liquid material is sprayed from a nozzle to form a droplet (mist), and a flow of a carrier gas is added to be blown to the vaporization surface.  Thereby, the droplets are brought into contact with the gasification surface to be vaporized.  In such a gasifier, in order to improve gasification efficiency, It is preferable to make the liquid material as a droplet of a small diameter as possible to be blown to the vaporization surface. but, The narrower the diameter of the droplet, The more there will be no contact with the gasification surface and the passage through the hole. Such a droplet which is not completely vaporized is a factor which causes particles to be immersed in the film forming chamber by the flow of the carrier gas. For example, if the liquid of the liquid material -4 - 200932368 which is not completely vaporized is immersed in the film forming chamber, if oxygen remains in the film forming chamber, Then the droplet will oxidize and become fine particles. Once attached to the substrate, There will be problems with abnormal film formation or poor film quality.  therefore, Conventionally, the raw material gas generated in the gasifier is supplied to the film forming chamber through a filter having micropores. The filter is heated from the outside to vaporize the incompletely vaporized droplets contained in the material gas in the filter. Take this Even if the gasification efficiency of the gasifier itself is slightly poor, It is also possible to prevent droplets that are not completely Q vaporized from being immersed into the film forming chamber as they are.  also, In order to improve gasification efficiency, a gas permeable member having a fine pore-filled solid charge or a microporous hole such as a porous body, In a state where the air permeable member is heated by a heating means such as a heater on the outside, The liquid droplets of the liquid material are passed through to vaporize (for example, refer to Patent Document 1, 2 ). By this, The possibility that the droplets are in contact with the venting member will also increase. Therefore, the gasification efficiency can be improved.  Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-347598 Ο Patent Document 2: Japanese Laid-Open Patent Publication No. Hei No. 0-855-8 No. 1 (Summary of the Invention) A solid filler used in the past to vaporize liquid droplets of a liquid raw material, Porous body, The air permeable member such as a filter is heated by heating means such as a heater from the outside. Therefore, it is impossible to uniformly supply heat to the entire air permeable member. In the air permeable member, for example, a portion having a low temperature such as a portion where the heat is not sufficiently reached by leaving the heating means, Therefore, the droplets are not entangled by the gas -5-200932368.  For example, in the gasifier described in Patent Document 1, Since the solid charge is heated by the heating means on the outside, Therefore, in the solid filling material, compared to the peripheral region close to the heating means, The temperature in the central area is low,  It is difficult to form a uniform temperature of the entire solid charge. Such a situation, The temperature in the central region does not reach the temperature at which the liquid material can be vaporized. Poor gasification and blockage of solid charge.  Q is relative, In the gasifier described in Patent Document 2, In order not to cause clogging in the porous body, the liquid raw material is efficiently vaporized. And setting a part of the flow path through the porous body, Circulating the heat medium in the flow path, Thereby, it is heated by the inside of a porous body. however, This alone is not enough. that is, The flow path through which the heat medium flows is a part that is disposed only in the porous body. Therefore, it is impossible to uniformly supply heat to the entire porous body. and so, Partially poor gasification, It is impossible to completely eliminate the clogging of porous bodies. also, To uniformly supply heat to the entire porous body, Then consider the formation of a flow path everywhere in the porous body. But as a result, the structure is not only complicated, And the surface area that the raw material gas can contact is reduced. The pressure loss of the porous body becomes large. This will not be able to obtain the raw material gas at a given flow rate.  then, The present invention has been made in view of the above problems, The purpose is to provide a method for vaporizing liquid droplets of a liquid material through a gas permeable member. The temperature of the entire air permeable member can be made uniform. A gasifier and a film forming apparatus that prevent clogging due to incomplete gasification.  (Means for solving the problem) -6- 200932368 In order to solve the above problems, According to a certain aspect of the present invention, A gasifier can be provided, Its characteristics are:  Liquid material discharge means, It is formed by forming a liquid material into a droplet shape and discharging it;  Guide entrance, It is introduced into the above liquid material in the form of droplets;  Plate-shaped air permeable member, It is arranged opposite to the above-mentioned introduction port,  Constructed by a member having a resistor that generates heat by energization;  q a pair of electrodes, It is disposed opposite to each other so as to be able to sandwich the air permeable member;  The power supply is configured to energize the air permeable member via the pair of electrodes to generate heat; In the delivery port, the raw material gas which is vaporized by the inside of the air permeable member which is generated by the heat generation of the liquid material is sent out to the outside.  In order to solve the above problems, According to other aspects of the invention, In the film forming apparatus, a film forming apparatus including a film forming chamber in which a raw material gas is introduced by vaporizing a liquid material to generate a material gas, and a film forming process is performed on the substrate to be processed is provided. Its characteristics are:  The above gasifier system has:  Liquid material discharge means, It is formed by forming a liquid material into a droplet shape and discharging it;  a guide inlet' which is introduced into the liquid material in the form of a droplet;  Plate-shaped air permeable member, It is arranged opposite to the above-mentioned introduction port,  Constructed by a member having a resistor that generates heat by energization;  -7- 200932368 A pair of electrodes ' are arranged to face each other so as to be able to sandwich the air permeable member;  The power supply is configured to energize the air permeable member via the pair of electrodes to generate heat; In the delivery port, the raw material gas which is vaporized by the inside of the air permeable member which is generated by the heat generation of the liquid material is sent out to the outside.  Φ According to the invention as such, Then, since the air permeable member is constituted by a member having a resistor that generates heat by energization, Therefore, the air permeable member can be directly energized via a pair of electrodes. Thereby, the entire air permeable member can be heated. By forming the temperature of the entire permeable member to be uniform, So as long as the air permeable member passes through the liquid material in the form of droplets, The droplets can be completely vaporized. With this, More efficient gasification than ever before, And it can prevent the gasification caused by the partial temperature drop, Therefore, clogging of the ventilating member can be prevented.  Oh, again, Each of the pair of electrodes may be configured such that the front side surface and the back side surface of the air permeable member facing the inlet are joined to each other so as to cover each surface. A plurality of through holes are formed in each of the pair of electrodes. With this, The area of the pair of electrodes in contact with the air permeable member is large, Therefore, it is possible to make heat efficiently. therefore, For example, when the air permeable member is energized, the entire body can be quickly raised to the desired temperature.  also, The air permeable member may be formed in a rectangular plate shape. The pair of electrodes are respectively joined to each other on the side faces of the air permeable members facing each other so as to cover the respective faces. By this, when the electrodes are provided on the front side surface and the back side surface of the opposite inlet port -8-200932368, Easily flow the liquid material in the form of droplets, That is to say, the conductivity is improved.  also, The air permeable member is configured, for example, by using a resistance heating element composed of a porous material. In this case, Porous materials are preferred for those containing carbonized bismuth. also, The air permeable member can be formed using a resistance heating body composed of a fiber material.  In order to solve the above problems, According to other aspects of the invention, Then 0 can provide a gasifier, a gasifier that is connected to other gasifiers that vaporize the liquid feedstock to form a feed gas. Its characteristics are:  Guide entrance, It is introduced into the raw material gas generated by the above other gasifiers,  Plate-shaped air permeable member, It is arranged opposite to the above-mentioned introduction port,  Constructed by a member having a resistor that generates heat by energization;  a pair of electrodes, It is disposed opposite to each other so as to be able to sandwich the air permeable member;  The power supply is configured to energize the air permeable member via the pair of electrodes to generate heat; And the delivery port' is configured such that the material gas from the other vaporizer introduced from the introduction port is sent to the outside through the inside of the air permeable member that generates heat.  According to the invention as such, Then, the material gas generated in the other gasifier can be passed through the gas permeable member of the gasifier constituted by the member having the electric resistance that generates heat by energization, The droplets which are not completely vaporized in the other gasifiers can also be vaporized in the gasifier of the present invention.  -9- 200932368 In order to solve the above problems, According to other aspects of the invention, A film forming device can be provided, A film forming apparatus including a film forming chamber that introduces a material gas by vaporizing a liquid material to form a material gas, and performs a film forming process on the substrate to be processed. Its characteristics are:  The vaporizer is composed of a first vaporizer that generates a raw material gas by vaporizing a liquid raw material, and a connected second vaporizer.  The second gasifier described above has:  0. The inlet port is introduced into the raw material gas generated by the first vaporizer;  Plate-shaped air permeable member, It is arranged opposite to the above-mentioned introduction port,  Constructed by a member having a resistor that generates heat by energization;  a pair of electrodes, It is disposed opposite to each other so as to be able to sandwich the air permeable member;  power supply, The electric air permeable member is energized by the pair of electrodes to generate heat; And the G delivery port ‘the raw material gas from the first vaporizer introduced from the introduction port is sent to the film formation chamber through the inside of the heat-permeable air permeable member.  According to the invention as such, Then, the raw material gas generated in the first vaporizer can be passed through the air permeable member of the second vaporizer including the member having the electric resistance that generates heat by energization. Thereby, the droplets which are not completely vaporized in the i-th gasifier can be vaporized in the second vaporizer. With this, It is possible to prevent droplets of the liquid raw material from entering together with the material gas in the film forming chamber or the like.  -10- 200932368 [Effects of the Invention] According to the present invention, When the liquid material droplets are vaporized by aeration, The air permeable member can be heated by directly energizing the air permeable member. Thereby, the temperature of the entire air permeable member can be made uniform, so that the liquid droplets can be completely vaporized. With this, More efficient gasification than ever before, Further, it is possible to prevent a poor gasification caused by a partial temperature drop, because the clogging of the air permeable member is prevented.  [Embodiment] Hereinafter, a comparative embodiment of the present invention will be described in detail with reference to the drawings. In addition, In this specification and drawings, The components that are substantially functional are given the same symbol. This is omitted by the above (film forming apparatus of the first embodiment) 〇 First, A film forming apparatus according to a first aspect of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing an example of the configuration of the first embodiment. The film forming apparatus 10A shown in Fig. 1 is formed by forming a metal oxide film on a board such as a semiconductor wafer (hereinafter simply referred to as "wafer") W. have: Supplying a liquid raw material supply source i containing a liquid raw material composed of an organic compound containing Hf and a carrier gas supply source 1 2 0 supplying a carrier gas, And a gas 3' which is obtained by vaporizing the liquid raw material supplied from the liquid supply source 1 1 而 to generate a raw material gas, and a raw material gas generated by the vaporizer 300 in the wafer w member member, According to the rate, this can be explained by the same method. The membrane-based CVD ring is applied. 10 - Materializer Example -11 - 200932368 If the film forming chamber 200 of the Hf02 film is formed, And a control unit 140 for controlling the film forming apparatus. In addition, Carrier gas, For example, a gas can be used.  The liquid raw material supply source 1 10 and the gasifier 300 are connected by a liquid pipe 1 1 2 , The carrier gas supply source 丨2〇 is connected to the vaporized carrier gas supply pipe 122, The vaporizer 300 is connected to the raw material gas supply pipe 132. and, The liquid material flow control valve Ϊ丨4 is provided in the piping π 2,  The supply pipe 1 22 includes a carrier gas flow rate control valve 1 . The body supply pipe 1 3 2 includes a material gas flow rate control valve i body material flow rate control valve 1 1 4, The carrier gas flow rate control valve gas flow rate control valve 134 adjusts the opening degree in accordance with each of the control unit 140. The control unit 140 is preferably a flow rate of the liquid material in accordance with the raw material supply pipe 1 1 2 . The flow rate of the carrier gas flowing to the pipe 122, And the flow rate of the raw material gas flowing in the raw material ^ 营1 3 2 to output a control signal.  The film forming chamber 200 is, for example, an inner space surrounded by a side wall having a substantially cylindrical shape and a top wall 210 and a bottom wall 212.  The pedestal 222 of the wafer W is placed. Side wall, The top wall 210 and the bottom wall are made of a metal such as aluminum 'stainless steel. The pedestal 222 is embedded with a plurality of support members 224 (here only one is shown) burying the heater 226 in the pedestal 222. The temperature placed on the susceptor circle W can be adjusted by controlling the power supplied to the heater 226.  Each of the idle raw material feeders 300 of Ar and the like is supplied to the carrier gas by the liquid material of the film forming chamber 200. In the raw material gas 3 4, The liquid 124 And the original control signal flows to the liquid carrier gas for gas supply, The horizontal load on this side wall 2 1 2 is supported, for example, by a cylindrical shape. And a vent 230 is formed in the bottom wall 212 of the film forming chamber 200 from the crystal -12-200932368 on the power source 228 2 2 2 , The exhaust system 230 is connected to the exhaust port 230. then, The inside of the film forming chamber 200 can be decompressed to a predetermined degree of vacuum by the exhaust system 232.  A shower head 240 is attached to the top wall 21 of the film forming chamber 200. The shower head 240 is connected to the material gas supply pipe 132. The raw material gas generated in the vaporizer 300 is introduced into the shower head 240 via the raw material gas supply pipe 132. The shower head 240 has an interior space 242. And a plurality of gas discharge holes 244 connected to the internal space 242. The raw material gas introduced into the internal space 2 4 2 of the shower head 240 via the material gas supply pipe 1 3 2 is discharged from the gas discharge hole 244 toward the wafer on the susceptor 222.  In the film forming apparatus 100 of the present embodiment, The liquid raw material supply source 110 is a liquid raw material, For example, HTB (HAFNIUM TERT- BUTOXIDE') This liquid raw material is supplied to the gasifier 300 via the liquid raw material supply pipe 12 .  Q The film forming apparatus 100 configured as described above can supply the raw material gas from the vaporizer 300 in the next manner. Once the liquid raw material from the liquid raw material supply source 1 1 经由 is supplied to the piping 1 1 2 via the liquid raw material, The carrier gas from the carrier gas supply source 120 is supplied to the vaporizer 300 via the carrier gas supply pipe 1 22, Then, the liquid material is formed into a droplet form together with the carrier gas, and is discharged to the gasification chamber provided in the vaporizer 300. The liquid material is vaporized to form a material gas. The raw material gas II generated in the vaporizer 300 is supplied to the film forming chamber 2 through the raw material gas supply pipe 132. The desired process is performed on the wafer W in the film chamber 200.  -13- 200932368 However, When the vaporizer 300 of the film forming apparatus 100 as described above cannot completely vaporize the liquid material, One of the liquid droplets of the liquid material is mixed into the material gas and sent to the material gas supply pipe 132. I am afraid to enter the film chamber 200. The droplets of the liquid so as to be immersed in the film forming chamber 200 become particles, and the film quality of the film formed on the wafer W is low. According to the gasifier 300 of the present embodiment, Then, as described below, it is possible to effectively vaporize all the liquid droplets of the liquid material to form a good precursor.  (Configuration Example of Gasifier of First Embodiment) Next, A configuration example of the vaporizer 300 according to the first aspect of the present invention will be described with reference to the drawings. Fig. 2 is a vertical cross-sectional view showing a schematic configuration example of the first embodiment vaporizer 300. This gasifier 3 00 is divided into: a gasification part 3 00B that vaporizes a liquid raw material, And a liquid raw material supply unit that supplies the liquid to the vaporization unit 3 00B in the form of a droplet, ❹ First, The configuration of the liquid raw material supply unit 300A will be described.  The liquid material supply unit 300A is provided with a liquid material flow path 3 1 0 extending vertically from the upper side toward the inside. The flow path 3 1 2 is extended from the side to the inner horizontal direction. The liquid supply pipe 112 is connected to one end of the liquid material flow path 3 1 0, The carrier supply pipe 122 is connected to one end of the carrier gas flow path 312.  At the other end of the liquid material flow path 310, The discharge nozzle 316 has a liquid material discharge means, It has a liquid material formed into a droplet shape,  There will be a dip in the raw materials.  The material flow is roughly the shape of the material 3 00A in the extended carrier original gas as the spit outlet 314 of the 14-200932368. This discharge nozzle 316 is, for example, a small tip (this configuration is omitted in Fig. 2). The discharge port 314 at the front end thereof can be disposed so as to face the internal space of the vaporization unit 300B.  The diameter of the discharge port 314 of the discharge nozzle 316 is determined in accordance with the target size of the liquid droplets supplied to the liquid material in the vaporization portion 300B. In the gasification section 300B, In order to reliably vaporize the liquid material in the form of droplets, It is advantageous to have a small droplet size. Therefore, the diameter of the discharge port 3 1 4 is also ideal for smaller 〇. but, If the size of the droplet is too small, There is a fear that the flow rate of the raw material gas obtained by vaporizing the droplets is insufficient. It is desirable to consider these points to determine the diameter of the spout 314.  The constituent material of the nozzle 3 16 is discharged, A synthetic resin such as a polyimide resin or a metal such as stainless steel or titanium which is resistant to an organic solvent is preferable. and, The discharge nozzle 316 is constructed by using a synthetic resin, This allows heat to be not conducted from the surroundings to the liquid material before it is discharged. and, Under the use of polyimine resin, The residue (precipitate) of the liquid material is difficult to attach to the discharge nozzle 316. Prevent clogging of the nozzle.  and, Inside the liquid material supply unit 300A, The carrier gas ejecting unit 3 1 8 is disposed so as to surround the tip end of the discharge nozzle 3 16 .  The carrier gas injection portion 3 1 8 is connected to the other end of the above-mentioned carrier gas flow path 3 1 2 , The carrier gas from the carrier gas flow path 312 is configured to be ejected toward the vaporization unit 300B together with the liquid material.  in particular, The carrier gas injection portion 318 is formed in a cup shape that surrounds the front end of the discharge nozzle 316. A carrier gas discharge port 3 20 is formed at the bottom.  The carrier gas discharge port 320 is formed to surround the discharge port 314 in the vicinity of the outlet 314 of the discharge -15-200932368 which can be formed at the tip end of the discharge nozzle 316. Thereby, the carrier gas can be ejected from the surroundings, The liquid droplets discharged from the discharge port 314 are surely flowed toward the gasification unit 300B. The air permeable member 410 described later in the portion 300B can be stabilized.  Secondly, The configuration of the gasification unit 300B will be described. This | is a casing having a gasification means 400 which will be described later. The outer casing is a top wall member 3 32 and a bottom wall member which are formed by a cylindrical side wall member 330 and a φ side wall member 305. The side wall members 330, Top wall member 332, The bottom wall structure f is, for example, aluminum, A metal member such as stainless steel is used. The side wall member 3 30 and the top wall member 3 32 are joint members 338 using bolts or the like in a state of being sandwiched therebetween. 338 The member 330 and the bottom wall member 334 are joint members 3 4 2 A which are bolted or the like between the jaw ring 340, 3 4 2 Β to combine. The airtightness of the internal space of the section 300B.  〇 A liquid 354 for introducing a liquid raw material is formed in the top wall member 3 32, The bottom wall member 334 is formed with a feed material gas, and a liquid material which is supplied from the liquid material is vaporized inside the side wall member 303 to generate a material gas.  400, The gasification unit 300B is used to form the upper side space 350 and the lower space 3 5 2 by the gasification means 400. The liquid material droplets are introduced into the upper space port 354, Blowing to the gasification means, The droplets of the liquid material are vaporized by the vaporization means 400 and are sent out from the delivery port 365 via the lower space 3 52.  The discharge port 3 1 4 The liquid material is blown to the gasification gasification unit 3 00B The cylindrical outer casing is respectively disposed in the 3 3 4 configuration, and the 3 34 is the combination of the split ring 3 36. In the state of the side wall, this is kept at the inlet of the gasification drop 3 5 6 .  Part 300A for gasification means Part space division 3 5 0 from import 400. Then, the raw material gas - 16 - 200932368 The gasification means 400 of the present embodiment is provided with: a gas permeable member 410 that vaporizes a liquid material in a droplet shape by energization and heat generation, And a first electrode (front side electrode) 420 and a second electrode (back side electrode) 430 which are disposed opposite each other so as to be able to face the upper and lower sides of the air permeable member 410, And respectively for each of the electrodes 420, 430 is supplied with a first power supply line 440 for supplying electric power for generating heat to the air permeable member 410, The second supply wire 450.  The air permeable member 401 is a plate-shaped member having a gas-passing gas material that flows through a droplet-shaped liquid material and has a resistance that generates heat by energization. Such a gas-permeable member 410 is, for example, by cesium carbide (S i C ), It is composed of a porous resistor such as a conductive ceramic. Here, a case where the air permeable member 410 is formed into a disk shape as shown in FIG. 3 by cerium carbide (SiC) is exemplified, and the ventilating member 4 10 is ventilated as shown in FIG. 2 . The front surface of the member 410 is joined to the disk-shaped first electrode 4 2 0 so as to cover the entire surface. Further, the disk-shaped second electrode 430 is joined to the back surface of the air permeable member 610 so as to cover the entire surface.  In addition, In the vaporization unit 300B of the first embodiment, each electrode 420 is used. 430 is provided on the entire surface of the front and back of the air permeable member 410, Therefore, the air permeable member 410 is clogged with the flow of the liquid material in the form of a droplet.  Therefore, a plurality of through holes 422' are formed in the first electrode 420', for example, as shown in Fig. 4, and a plurality of through holes 432 are formed in the second electrode 430 as shown in Fig. 5, The flow of the liquid material in the form of droplets may pass through the through hole 422. The through hole 432 passes through to the air permeable member 410.  that is, The liquid material in the form of droplets which are discharged from the discharge nozzle 316 by the flow of the carrier gas -17-200932368 and flying in the upper space 350 are guided to the air permeable member 41 via the plurality of through holes 422. The side surface of the table. Further, the raw material gas which is formed by vaporizing the liquid material in the form of droplets through the air permeable member 410 is guided to the lower space through a plurality of through holes 432. The through holes 422, The number of through holes 432, size,  The configuration of the temple is not limited to Figure 2. Figure 4, Figure 5 shows. For example, the number of through holes 422 and the number of through holes 432 may be the same or different. The through hole 422 and the through hole 43 2 may be disposed coaxially with respect to the arrangement. Or stagger the configuration. In order to allow the liquid material in the form of droplets to reach the front side surface of the permeable member 4 10 as much as possible, Preferably, the opening diameter of the through hole 422 formed in the first electrode 420 is enlarged. Or increase the number of through holes 422.  Similarly, in order to prevent the material gas passing through the air permeable member 4 10 from being sent to the lower space 3 52, Preferably, the opening diameter of the through hole 432 formed in the second electrode 430 is enlarged. Or increase the number of through holes 432.  〇 However, Further, the entire air permeable member 410 can generate heat without bias. Preferably, the through hole 422 is set in accordance with the electrical characteristics or size of the air permeable member 410 or the like. The opening diameter or number of 43 2, The electric power is supplied to the air permeable member 410.  also, as shown in picture 2, The first power supply line 440 is connected to the outer edge portion of the first electrode 420. The first supply wire 440 extends vertically to the bottom, It is connected to the first external terminal 366 which is protruded from the bottom wall member 3 34 to the lower side via the first internal terminal 3 64. Further, the second power supply line 450 is connected to the outer edge portion of the second electrode 430. The second supply wire 45 0 extends to the lower side,  18 - 200932368 is connected via the second internal terminal 374 to the second external terminal 376 which protrudes from the bottom wall member 334 to the lower side. The first external terminal 366 and the second external terminal 376 are connected to, for example, an AC power supply 380.  In addition, Due to the venting member 410, First electrode 420, The second electrode 430' is the first power supply line 440, The second power supply wire 450 is a conductive member. Therefore, these are insulated from the outer case of the side wall member 330 and the like. in particular,  Air permeable member 410, First electrode 420, The second electrode 430 is a method in which the outer circumference of the second electrode 430 can be surrounded by 0. The insulating member 344 provided between the side wall member 330 and the side wall member 330 is fixed while being insulated. also, The first electrode 420 is fixed while being insulated from the annular insulating sandwiching member 346 between the top wall member 332.  also, The first power supply wire 440 is by the insulation holding member 344, Insulation sleeves 442 are used for insulation. The second power supply wire 450 is supported by the insulating member 344. The insulating sleeve 452 is insulated.  here, Referring to Fig. 2, the description will be made regarding the supply of the electric Q force from the outside to the first electrode 420, The terminal structure of the second electrode 430. as shown in picture 2, The bottom wall member 334 is provided with a first terminal portion 360 for supplying electric power to the first electrode 420, And a second terminal portion 370 for supplying electric power to the second electrode 43 0 .  The first terminal portion 3 60 is composed of a case member 168 and a first internal terminal 364. The outer casing member 368 accommodates the first external terminal 366 in a state in which the front end of the first external terminal 366 is protruded downward. Made of insulating material, The first internal terminal 364 is provided above the outer casing member 368 in a state of being connected to the first external terminal 366. Further, the second terminal portion 370 is composed of the outer casing member 378 and the second inner terminal 374. The outer casing member 3 78 accommodates the second external terminal 376 in a state in which the front end of the second external terminal 3 76 is protruded downward. Made of insulating material,  The second internal terminal 374 is provided above the outer casing member 378 in a state of being connected to the second external terminal 376. Both the housing member 368 and the outer casing member 378 are fitted to the mounting holes formed in the bottom wall member 334. It is fixed by close welding or the like. Thereby, the airtightness of the internal space of the vaporization portion φ 3 00B is maintained.  In the terminal structure thus constructed, When the first terminal portion 360 and the bottom wall member 334 of the second terminal portion 370 are fixed to the side wall member 330,  Then, the first internal terminal 364 is placed together with the first terminal portion 360. The second internal terminal 3 74 will start up with the second terminal portion 370. Entering the inside of the side wall member 3 3 0, They are electrically connected to the other end of the first power supply line 440 and the other end of the second power supply line 45 0, respectively. With this, The terminal mounting when assembling the gasifier becomes easy. In addition, The terminal configuration is not limited to the above. For example, it may be attached or detached from the bottom wall member 3 3 4 or the side wall member 3 30.  In such a vaporization means 400, an alternating current is supplied to the first external terminal 3 66 and the second external terminal 3 76 by the alternating current power supply 380. Thereby, the air permeable member 410 can be directly energized via the first electrode 420 and the second electrode 430. With this, The heat generation temperature of the air permeable member 4 10 can be directly adjusted by controlling the output 値 of the AC power source 380.  and, A temperature sensor head such as a thermocouple 3 90 temperature sensor is provided in the vicinity of the air permeable member 410. The voltage change generated by the thermocouple 3 90 can be determined, for example, by an external measuring unit 392. The measurement -20-200932368 data is transmitted to the control unit 140. The control unit 140 can control the output of the AC power source 380 according to the data received from the meter 392. The heating temperature of the gas-passing member 4 1 〇 is adjusted.  (Operation of Film Forming Apparatus) The operation of the film forming apparatus 100 of the present embodiment configured as described above will be described with reference to the drawings. When the raw material gas φ body is generated by the gasifier 300, the opening degree of the liquid material flow control valve 1 1 4 is adjusted, The liquid raw material of a predetermined flow rate is supplied from the liquid raw material supply source 110 to the vaporizer 300 via the liquid raw material supply pipe 1 1 2 . Simultaneously, Adjusting the opening of the carrier gas flow control valve 124, The carrier gas of a predetermined flow rate is supplied from the carrier gas supply source 120 to the vaporizer 300 via the carrier gas supply pipe 122.  and, In the vaporizer 300, AC power is output from the AC power source 380 to cause the air permeable member 4 10 to generate heat. at this time, The voltage generated by the thermocouple 390, i.e., the temperature of the permeable member 410, is measured by a meter 392. The Q-after-control unit 140 controls the AC power source 3 8 根据 based on the measurement result to adjust the air permeable member 4 10 to a predetermined temperature at least higher than the vaporization temperature of the liquid material.  The liquid material supplied to the vaporizer 300 via the liquid material supply pipe 1 1 2 reaches the discharge nozzle 316 via the liquid material flow path 310. The discharge port 314 is discharged into a droplet shape. and, The carrier gas supplied to the vaporizer 3 〇 via the carrier gas supply pipe 1 2 2 is supplied to the carrier gas injection portion 318 via the carrier gas flow path 312,  The flow is ejected from the carrier gas discharge port 320 toward the upper space 350 200932368 of the gasification portion 300B. Since the carrier gas thus injected is passed through the discharge port 314 of the discharge nozzle 316, Therefore, the liquid droplets of the liquid raw material continuously discharged from the discharge port 314 can be flown in and flowed stably in the direction of the gasification means 400.  The liquid material that has entered the upper side space 350 of the vaporization unit 300B and is blown into the vaporization section 400 enters the air permeable member 410 through the through hole 422 of the first electrode 420. at this time, The air permeable member 410 is heated to a predetermined temperature higher than the vaporization temperature of the liquid material by the heat of the 〇 resistance. therefore, The liquid material in the form of droplets entering the air permeable member 410 is instantaneously vaporized to obtain the material gas.  In addition, The first electrode 420 is a gas permeable member 410 that is in close contact with heat. Therefore, the temperature is substantially equal to the temperature of the air permeable member 410. Therefore, Although it is conceivable that a part of the liquid material in the form of a droplet contacts the first electrode 420, But even if this is the case, Still the same as when contacting the surface of the air permeable member 410, The flow of the carrier gas is instantaneously vaporized and guided to the air permeable member 410 via the through hole 422.  As a result, The raw material gas generated by vaporization of the liquid material in the form of a droplet through the air permeable member 410 is passed through the air permeable member 4 10 to the back side surface together with the carrier gas. then, The raw material gas supply pipe 132 is sent to the raw material gas supply pipe 132 via the lower space 325 and the delivery port 356.  The material gas sent to the material gas supply pipe 132 is supplied to the film forming chamber 200. Introduced into the internal space 242 of the shower head 24〇, The wafer W is discharged from the gas discharge hole 244 to the susceptor 222. then, A predetermined film such as an HfO 2 film is formed on the wafer W. In addition, The flow rate of the material gas introduced into the film formation -22-200932368 chamber 200 can be adjusted by controlling the opening degree of the material gas flow rate control valve 134 provided in the material gas supply pipe 133.  When the first embodiment is used as described above, Then, since the ventilating member 410 can be directly energized to generate heat, Therefore, the entire air permeable member 410 can be heated. With this, The temperature of the entire air permeable member 410 can be made uniform.  Therefore, as long as the air permeable member 410 passes through the liquid material in the form of droplets, It is possible to completely vaporize the droplets. With this, It can improve gasification efficiency more than ever.  Q, again, Since it can prevent gasification caused by partial temperature drop, Therefore, clogging of the air permeable member can be prevented. and so, The maintenance cycle of the gasification means 400 including the permeable member 410 can be extended. With this, It is also possible to increase the throughput of the film forming apparatus 100.  also, Each electrode 420 of the first embodiment, 430 is respectively disposed so as to be able to cover the surfaces on the front side surface and the back side surface of, for example, the air permeable member 4 10 , respectively. Therefore, each electrode 42 0, 430 is in contact with the air permeable member 4 1 0, and the area is large. Therefore, it is possible to generate heat with good efficiency. therefore, For example, when the air permeable member 410 is energized, the entire body can be quickly raised to the desired temperature.  and, The conventional configuration of a member for heating a liquid material by external heating, The configuration for supplying electric power to the air permeable member 4 10 in the present embodiment is a simple configuration in which the electrodes are disposed. therefore, The manufacturing cost of the gasifier 300 can be reduced, And its maintenance costs can also be reduced. also, If this embodiment is used, It is not necessary to arrange a flow path of the heat medium inside the air permeable member 410. Therefore, the flow path of the material gas is not blocked. The pressure loss of the gasification unit 400 can be suppressed to a minimum. the result, A material gas of a sufficient flow amount of -23 - 200932368 can be introduced into the film forming chamber 200.  In addition, The air permeable member 410 is directly monitored for temperature of the ventilating member 410 by, for example, a temperature sensor such as a thermocouple 390. According to the measured temperature, The output of the AC power source 380 is controlled by the control unit 140. Thereby, the temperature of the ventilating member 410 can be properly controlled. therefore, There is no case where the temperature of the entire air permeable member 4 10 0 is lowered. Further, the temperature of the entire air permeable member 410 can be uniformly maintained. therefore, The liquid material in the form of droplets passing through the permeable Q member 410 can be reliably vaporized.  also, According to the vaporizer 300 of the first embodiment, The heating temperature of the ventilating member 4 10 can be controlled according to the type or amount of the liquid material and the size of the droplet. Therefore, the liquid raw material can be surely vaporized more efficiently.  In addition, In the first embodiment, The vaporization unit 300B is formed by forming a gas permeable member into a disk shape. The pair of electrodes can be respectively configured to be joined to each other such that the front side surface of the air permeable member facing the inlet and the back side surface thereof cover the respective surfaces. But it is not limited to this. For example, the gasification part may also form a gas permeable member into a rectangular plate shape. The pair of electrodes can be joined to each other so that the side faces of the air permeable members facing each other.  (Modification of the gasifier of the first embodiment) A modification of the vaporizer 300 will be described with reference to the drawings. Fig. 6 is a vertical cross-sectional view showing a schematic configuration example of a vaporizer 300 according to a modification of the first embodiment. Fig. 7 is a cross-sectional view taken along line A-A of the vaporizer shown in Fig. 6. The vaporizer 300 shown in Fig. 6 differs from the vaporizer 300 shown in Fig. 1 in the configuration of only the vaporization unit 300B. in particular, The gasification -24 - 200932368 shown in Fig. 6 is a configuration in which the gasification means 402 is different from the configuration of the gasification means 400 shown in Fig. 1, In addition, it is the same as the gasifier 300 shown in FIG. Therefore, the same symbol is given to the part that performs the same function. The detailed description is omitted.  The gasification means 40 2 shown in Fig. 6 is provided with: a gas permeable member 4 1 2 that vaporizes a liquid material in a droplet shape by heating by energization, And the first electrode 424 and the second electrode 434 of the pair of Qs disposed to face each other so as to be able to sandwich the side end portions of the air permeable members 412 And separately for each electrode 424,  43 4 is supplied with a first power supply line 4 4 0 for supplying electric power for generating heat to the air permeable member 4 1 2, The second supply wire 4 50.  The air permeable member 4 1 2 shown in Fig. 6 is the same as the air permeable member 4 1 0 shown in Fig. 2, Having a gas flow through a liquid material stream in the form of droplets, Further, there is a plate-like member having a resistor that generates heat by energization. Here, when the air permeable member 4 1 2 is formed into a rectangular shape such as that shown in Fig. 7 by strontium carbide (S i C ).  如此 The air permeable member 412 is joined to the first electrode (one side electrode) 4 2 4 of the air permeable member 412 so as to cover the entire surface of the air permeable member 412 as shown in FIG. Further, a long second electrode (other side electrode) 434 is joined to the side surface of the air permeable member 4 1 2 so as to cover the entire surface. With such a composition, There is no clogging of the air permeable member 410 for the liquid material flow in the form of a droplet. Configurable electrodes 424, 434. With this, When the electrodes are provided on the front side surface and the back side surface of the air permeable member, Easily flow the liquid material in the form of droplets, That is to say, the conductivity is improved. therefore, Can make more liquid materials in the form of droplets -25- 200932368 gasification in a short time, Therefore, more raw material gases can be generated.  but, The air permeable member 410 of the first embodiment described above, The air permeable members 412 are all plate members. The thickness of the plate-like member is within a range that can prevent the passage of the liquid material in the form of droplets. A thinner can reduce the gasification means 400, 402 pressure loss. In this way, a larger flow rate of the material gas can be introduced to the film forming chamber 200.  also, Gasification means 400, 402 can also use a plate-like air permeable member 4 10, 4 1 2 thinner components, For example, a thin plate-shaped member. In this case,  A fibrous material can be used to form a thin plate-shaped member. The thin plate-like member may be woven or non-woven. also, In the case where the liquid material supply unit 3 00A and the vaporization unit 3 00B are integrally formed, the vaporizer 300 according to the first embodiment of the present invention is described. However, the present invention is not limited thereto, and the liquid raw material supply unit 300A and the vaporization unit 300B may be separately configured. In this case, The liquid raw material supply unit 30 0A can be replaced with another Ο gasifier to constitute a vaporizer in which the vaporization unit 300B is a single unit. In other words, the material gas generated in the other gasifier can be introduced from the inlet port 3 54 of the vaporizer formed only by the gasification unit 300B. Therefore, the gas-passing member 41 that generates heat by energization passes through another gasifier (for example, a gasifier having a poor gasification efficiency such as an existing gasifier or a conventional gasifier). Generated raw material gas, The liquid droplets that have not been completely vaporized in the other gasifiers can be vaporized in the vaporizer formed by the configuration of the vaporization unit 300B of the first embodiment.  -26- 200932368 (film forming apparatus of the second embodiment) A film forming apparatus according to a second embodiment of the present invention will be described with reference to the drawings. Fig. 8 is a view for explaining a schematic configuration example of a film forming apparatus of a second embodiment. Here, the description will be given of a configuration in which the vaporizer 322 used in the film forming apparatus is configured by the first vaporizer 304 and the second vaporizer 30 8 connected by the connecting pipe 306. In addition, The configuration of the gasifier in Fig. 8 is the same as that shown in Fig. 1, Therefore, for the part with the same function Q, the same symbol is given. The detailed description is omitted.  in particular, The vaporizer 302 of the second embodiment is provided with: The first vaporizer 3 04 that vaporizes the liquid raw material supplied from the liquid raw material supply source 110 to generate a raw material gas The raw material gas discharged from the discharge port of the second vaporizer 308 is discharged from the discharge port of the raw material gas generated by the first vaporizer 306 via the connection pipe 360 to the second vaporizer 308' connected to the inlet. The gas can be supplied to the film forming chamber via the material gas supply pipe 132.  The configuration of the second vaporizer 308 of the second embodiment is shown, for example, in Fig. 9. The configuration of the second vaporizer 308 is a vaporizer formed only by the configuration of the vaporization unit 300B in the vaporizer 300 of the first embodiment. The gasifier shown in Fig. 9 is a vaporizer formed only of the configuration of the vaporization unit 300B shown in Fig. 2 . also, The second gasifier 308 can also be the gasifier shown in Fig. 10. The gasifier shown in Fig. 10 is a vaporizer formed only of the vaporization portion 300B shown in Fig. 6. therefore, The second vaporizer 308 has the same configuration as the vaporization unit 300B shown in Fig. 2 or Fig. 6 . Therefore, the same reference numerals will be given to the parts having the same function, and detailed description will be omitted.  The first vaporizer 304 is a gasifier that vaporizes a liquid raw material supplied from a liquid raw material supply source -27-200932368 1 1 而 to form a raw material gas, and the composition or type thereof is not limited. It can be a conventional gasifier.  According to the invention as such, Then, the material gas generated by the first vaporizer 304 in the second vaporizer 300 can pass through the air permeable member that is energized. Thereby, the first vaporizer 304 is not completely vaporized, and the gasification can be performed in the second vaporizer 308. therefore, It is possible to prevent droplets of the liquid raw material from entering with the raw material gas in 200 or the like.  Q, the preferred embodiment of the present invention will be described with reference to the drawings. However, the invention is of course not limited to this example. As long as it is within the scope of the patent application, Thinking about various changes, Of course, these are also within the technical scope of the present invention.  E.g, The invention can also be applied to an MOCVD device, Plasma set, ALD (Atomic Layer Film Formation) device, LP-CVD (batch type 'horizontal type, a gasifier used in small batches, etc., A film forming apparatus such as a gasification mold.  〇 [Industrial Applicability] The present invention is applicable to vaporization of a liquid raw material to produce a raw material vaporizer and such a film forming apparatus.  [Brief Description of the Drawings] Fig. 1 is a view showing an example of the configuration of a film forming apparatus according to a first embodiment of the present invention.  Fig. 2 is a vertical view showing a configuration example of a vaporizer according to the embodiment;  The medium is formed in a film forming chamber that causes heat to be formed. Can be used for example or repair CVD equipment, A schematic view of the vertical group and the gas -28-200932368 Fig. 3 is a plan view of the air permeable member shown in Fig. 2.  Fig. 4 is a plan view showing the first electrode shown in Fig. 2;  Fig. 5 is a plan view showing the second electrode shown in Fig. 2;  Fig. 6 is a longitudinal sectional view showing a modification of the vaporizer of the same embodiment. Fig. 7 is a cross-sectional view taken along line A-A of Fig. 6.  [Fig. 8] Fig. 8 is a schematic configuration example of a film formation apparatus according to a second embodiment of the present invention.  Fig. 9 is a longitudinal cross-sectional view showing a configuration example of a vaporizer according to the embodiment. Fig. 1A is a longitudinal cross-sectional view showing a modification of the vaporizer of the same embodiment.  [Main component symbol description] Ο 1〇〇: Film forming device u 〇 : Liquid material supply source 1 1 2 : Liquid material supply piping 1 1 4 : Liquid material flow control valve 120: Current-carrying gas supply source 122: Carrier gas supply piping 124: Current-carrying gas flow control valve 132: Raw material gas supply piping 132 : Sending the exit -29- 200932368 1 3 4 : Raw material gas flow control valve 1 4 0 : Control unit 200: Film forming chamber 2 1 0 : Top wall 212: Bottom wall 222: Base 224: Support member φ 2 2 6 : Heater 2 2 8 : Power 2 3 0 : Exhaust port 2 3 2 : Exhaust system 240 : Shower head 2 4 2 : Internal space 244 : Gas discharge hole 3 0 0 : Gasifier 〇 3 0 0 A : Liquid material supply unit 3 00B : Gasification Department 3 0 2 : Gasifier 3 0 4 : 1st gasifier 306: Connection piping 308: 2nd gasifier 3 1 0 : Liquid material flow path 3 1 2 : Current-carrying gas flow path 3 1 4 : Spit out -30- 200932368 3 16:  3 18:  320 :  3 3 0 :  3 3 2 :  3 34 :  336,

342A 344 : 346 : 3 60 : 364 : 3 66 : 3 70 : Ο 3 74 : 3 76 : 3 5 0 : 3 5 2 : 3 54 : 3 5 6 : 3 6 8、 3 8 0 : 3 90 : 吐出噴嘴 載流氣體噴射部 載流氣體噴出口 側壁構件 頂壁構件 底壁構件 3 40 : Ο型環 、3 3 8Β :結合構件 、342Β :結合構件 絕緣保持構件 絕緣夾持構件 第1端子部 第1内部端子 第1外部端子 第2端子部 第2内部端子 第2外部端子 上側空間 下側空間 導入口 送出口 3 7 8 :外殼構件 交流電源 熱電耦 -31 200932368342A 344 : 346 : 3 60 : 364 : 3 66 : 3 70 : Ο 3 74 : 3 76 : 3 5 0 : 3 5 2 : 3 54 : 3 5 6 : 3 6 8 , 3 8 0 : 3 90 : spit out Nozzle carrier gas injection portion carrier gas discharge port side wall member top wall member bottom wall member 3 40 : Ο-ring, 3 3 8 Β : coupling member, 342 Β : coupling member insulation holding member insulating sandwich member first terminal portion first Internal terminal 1st external terminal 2nd terminal part 2nd internal terminal 2nd external terminal Upper side space Lower side space introduction port delivery port 3 7 8 : Case component AC power supply thermocouple -31 200932368

3 92 : 400、 4 10、 420 : 43 0 : 440 : 442、 422、 424 : 43 4 : W :晶 器 :氣化手段 :通氣性構件 電極 電極 給電線 :絕緣套管 給電線 :貫通孔 電極 電極 ❹ -323 92 : 400, 4 10, 420 : 43 0 : 440 : 442, 422, 424 : 43 4 : W : crystallizer: gasification means: air permeable member electrode electrode wire: insulating sleeve wire: through hole electrode Electrode ❹ -32

Claims (1)

200932368 十、申請專利範圍 1.一種氣化器,其特徵係具備: 液體原料吐出手段,其係使液體原料形成液滴狀而吐 出; 導入口,其係導入上述液滴狀的液體原料; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 〇 一對的電極,其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源,其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口,其係使來自上述導入口的上述液滴狀的液體 原料通過發熱的上述通氣性構件的内部而氣化生成的原料 氣體送出至外部。 2 ·如申請專利範圍第1項之氣化器,其中,上述〜對 Q 的電極係分別在上述通氣性構件之對向於上述導入口的表 側表面及其背側表面以能夠覆蓋各面的方式接合設置, 在上述一對的電極分別形成複數的貫通孔。 3.如申請專利範圍第1項之氣化器,其中,上述通 氣性構件爲矩形板狀,上述一對的電極係分別在上述通氣 性構件之互相對向的側面以能夠覆蓋各面的方式接合設置 4.如申請專利範圍第1項之氣化器,其中,上述通 氣性構件係使用由多孔質材所構成的電阻發熱體來構成。 200932368 5 ·如申請專利範圍第4項之氣化器,其中,上述多 孔質材係包含碳化矽。 6 如申請專利範圍第1項之氣化器,其中,上述通 氣性構件係使用由纖維材所構成的電阻發熱體來構成。 7. —種氣化器,係連接至使液體原料氣化而生成原料 氣體的其他氣化器之氣化器,其特徵係具備: 導入口’其係導入在上述其他氣化器所生成的原料氣 〇 體; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 一對的電極’其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源,其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口,其係使從上述導入口導入之來自上述其他氣 ο 化器的原料氣體通過發熱的上述通氣性構件的内部而送出 至外部。 8. —種成膜裝置,係具備由使液體原料氣化而生成原 料氣體的氣化器來導入原料氣體而對被處理基板進行成膜 處理的成膜室之成膜裝置,其特徵爲: 上述氣化器係具備: 液體原料吐出手段,其係使液體原料形成液滴狀而吐 出; 導入口,其係導入上述液滴狀的液體原料; -34- 200932368 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 一對的電極’其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源,其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口,其係使來自上述導入口的上述液滴狀的液體 q 原料通過發熱的上述通氣性構件的内部而氣化生成的原料 氣體送出至外部。 9. 一種成膜裝置,係具備由使液體原料氣化而生成原 料氣體的氣化器來導入原料氣體而對被處理基板進行成膜 處理的成膜室之成膜裝置,其特徵爲: 上述氣化器係藉由使液體原料氣化而生成原料氣體的 第1氣化器及連接的第2氣化器所構成, 上述第2氣化器係具備: 〇 導入口,其係導入在上述第1氣化器所生成的原料氣 體; 板狀的通氣性構件,其係對向於上述導入口來配置, 以具有藉由通電來發熱的電阻之構件所構成; 一對的電極,其係以能夠夾入上述通氣性構件的方式 來對向配置; 電源,其係經由上述一對的電極來使上述通氣性構件 通電而發熱;及 送出口,其係使從上述導入口導入之來自上述第1氣 -35- 200932368 化器的原料氣體通過發熱的上述通氣性構件的内部而送出 至上述成膜室。200932368 X. Patent application scope 1. A gasifier characterized by: a liquid material discharging means for forming a liquid material to form a droplet shape and discharging; and a guiding inlet for introducing the liquid material in a droplet shape; The air permeable member is disposed to face the inlet, and has a member having a resistor that generates heat by energization; and the pair of electrodes are configured to be able to sandwich the air permeable member a power supply, wherein the air permeable member is energized to generate heat via the pair of electrodes; and a delivery port that passes the ventilating member that generates heat from the droplet-shaped liquid material from the inlet port The inside of the gasification gas generated by the gasification is sent to the outside. The gasifier according to the first aspect of the invention, wherein the electrode system of the pair of Q is opposite to the front surface of the inlet port and the back surface of the air permeable member so as to cover each surface. In the mode bonding, a plurality of through holes are formed in each of the pair of electrodes. 3. The vaporizer according to claim 1, wherein the air permeable member has a rectangular plate shape, and the pair of electrodes are respectively provided on a side surface of the air permeable member facing each other so as to cover each surface. The gasifier according to the first aspect of the invention, wherein the gas permeable member is formed using a resistance heating element made of a porous material. The gasifier of claim 4, wherein the porous material comprises niobium carbide. 6. The gasifier according to the first aspect of the invention, wherein the gas-permeable member is formed using a resistance heating body composed of a fiber material. 7. A gasifier, which is connected to a gasifier of another gasifier that vaporizes a liquid material to generate a material gas, and is characterized in that: the inlet port is introduced into the gasifier generated by the other gasifier. a gas-permeable material; a plate-shaped air permeable member that is disposed opposite to the inlet, and has a member having a resistor that generates heat by energization; and a pair of electrodes that are capable of sandwiching the ventilation The power supply member is disposed opposite to each other; the power source is configured to energize the air permeable member via the pair of electrodes to generate heat; and the delivery port is configured to be introduced from the introduction port from the other gas eliminator The material gas is sent to the outside through the inside of the heat-permeable air permeable member. 8. A film forming apparatus comprising: a film forming apparatus in which a film forming chamber is formed by introducing a material gas into a gasifier that vaporizes a liquid material to form a material gas, and is characterized in that: The vaporizer includes: a liquid material discharging means for discharging a liquid material into a droplet shape; and a port for introducing the liquid material in a droplet shape; -34- 200932368 a plate-shaped air permeable member, A pair of electrodes that are disposed to have the electric resistance that generates heat by energization, and a pair of electrodes that are disposed opposite to each other so as to be able to sandwich the air permeable member; The air permeable member is energized to generate heat through the pair of electrodes, and the delivery port is formed by vaporizing the droplet-shaped liquid q material from the introduction port through the inside of the heat-permeable air permeable member. The material gas is sent to the outside. 9. A film forming apparatus comprising: a film forming apparatus in which a film forming chamber is formed by introducing a material gas into a gasifier that vaporizes a liquid material to form a material gas, and is characterized in that: The vaporizer is configured by a first vaporizer that generates a raw material gas by vaporizing a liquid raw material, and a connected second vaporizer, wherein the second vaporizer includes: a crucible inlet, which is introduced in the above a material gas generated by the first vaporizer; a plate-shaped air permeable member that is disposed opposite to the inlet, and has a member having a resistor that generates heat by energization; and a pair of electrodes Disposing the air permeable member so as to be sandwiched therebetween; the power source is configured to energize the air permeable member via the pair of electrodes to generate heat; and the delivery port is introduced from the introduction port The material gas of the first gas-35-200932368 chemical device is sent to the film forming chamber through the inside of the heat-permeable air permeable member. -36--36-
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US11274367B2 (en) 2018-07-24 2022-03-15 Lintec Co., Ltd. Vaporizer

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