KR101216765B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR101216765B1
KR101216765B1 KR1020100001274A KR20100001274A KR101216765B1 KR 101216765 B1 KR101216765 B1 KR 101216765B1 KR 1020100001274 A KR1020100001274 A KR 1020100001274A KR 20100001274 A KR20100001274 A KR 20100001274A KR 101216765 B1 KR101216765 B1 KR 101216765B1
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South Korea
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type
voltage
mosfet
terminal
type mosfet
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Korean (ko)
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KR20100095366A (ko
Inventor
사또시 하나자와
도시오 시노미야
히로야스 요시자와
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

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  • Ultra Sonic Daignosis Equipment (AREA)
  • Electronic Switches (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
KR1020100001274A 2009-02-20 2010-01-07 반도체 집적 회로 장치 Active KR101216765B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-037338 2009-02-20
JP2009037338A JP5337523B2 (ja) 2009-02-20 2009-02-20 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR20100095366A KR20100095366A (ko) 2010-08-30
KR101216765B1 true KR101216765B1 (ko) 2012-12-28

Family

ID=42630428

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100001274A Active KR101216765B1 (ko) 2009-02-20 2010-01-07 반도체 집적 회로 장치

Country Status (3)

Country Link
US (1) US8143924B2 (enExample)
JP (1) JP5337523B2 (enExample)
KR (1) KR101216765B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102823133B (zh) 2010-04-12 2016-11-16 美敦力巴肯研究中心有限公司 用于控制双向开关系统的控制电路系统和方法、双向开关、开关矩阵以及医疗刺激器
JP5537479B2 (ja) * 2011-03-30 2014-07-02 株式会社日立製作所 スイッチ回路及び半導体回路
JP5804854B2 (ja) * 2011-09-05 2015-11-04 株式会社東芝 超音波診断装置
JP2014028027A (ja) * 2012-07-31 2014-02-13 Toshiba Corp 超音波診断装置、スイッチング制御プログラムおよびスイッチング制御方法
JP6555465B2 (ja) * 2015-02-24 2019-08-07 横河電機株式会社 超音波流量計
US9705518B2 (en) 2015-12-02 2017-07-11 Butterfly Network, Inc. Asynchronous successive approximation analog-to-digital converter and related methods and apparatus
US10175347B2 (en) 2015-12-02 2019-01-08 Butterfly Network, Inc. Ultrasound receiver circuitry and related apparatus and methods
US10187020B2 (en) 2015-12-02 2019-01-22 Butterfly Network, Inc. Trans-impedance amplifier for ultrasound device and related apparatus and methods
EP3383278A4 (en) * 2015-12-02 2019-07-17 Butterfly Network, Inc. Multi-stage impulse generator and associated apparatus and method
US10082488B2 (en) 2015-12-02 2018-09-25 Butterfly Network, Inc. Time gain compensation circuit and related apparatus and methods
US9492144B1 (en) 2015-12-02 2016-11-15 Butterfly Network, Inc. Multi-level pulser and related apparatus and methods
JP2017123893A (ja) * 2016-01-12 2017-07-20 国立大学法人東北大学 超音波の送信回路
EP3425799A4 (en) * 2017-02-23 2019-05-08 Shenzhen Goodix Technology Co., Ltd. RECTANGULAR CELL GENERATION METHOD AND RECTANGULAR CELL GENERATION CIRCUIT
TW202034624A (zh) 2018-11-09 2020-09-16 美商蝴蝶網路公司 用於超音波裝置的跨阻抗放大器（tia）
JP7329411B2 (ja) 2019-10-18 2023-08-18 エイブリック株式会社 アナログスイッチ
JP7362474B2 (ja) * 2019-12-27 2023-10-17 キヤノンメディカルシステムズ株式会社 電圧出力装置、超音波診断装置、および超音波プローブ装置
GB2601803A (en) * 2020-12-11 2022-06-15 Univ Leeds Innovations Ltd Ultrasound transmitter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5632019A (en) * 1994-07-15 1997-05-20 Seagate Technology, Inc. Output buffer with digitally controlled power handling characteristics
JP3665408B2 (ja) 1996-02-29 2005-06-29 株式会社東芝 駆動パルス発生装置
JPH1051285A (ja) * 1996-05-28 1998-02-20 Mitsubishi Electric Corp 電圧制御型トランジスタの駆動回路
JP3139982B2 (ja) * 1997-08-14 2001-03-05 ジーイー横河メディカルシステム株式会社 超音波送波パルス発生回路および超音波診断装置
JP4657497B2 (ja) * 2001-06-07 2011-03-23 ルネサスエレクトロニクス株式会社 可変インピーダンス回路
JP2006261790A (ja) * 2005-03-15 2006-09-28 Matsushita Electric Ind Co Ltd レベル生成装置
JP4471967B2 (ja) 2006-12-28 2010-06-02 株式会社ルネサステクノロジ 双方向スイッチモジュール
JP4946572B2 (ja) * 2007-03-30 2012-06-06 株式会社日立製作所 半導体集積回路装置
JP2010042146A (ja) * 2008-08-13 2010-02-25 Ge Medical Systems Global Technology Co Llc 超音波撮像装置

Also Published As

Publication number Publication date
US20100214006A1 (en) 2010-08-26
KR20100095366A (ko) 2010-08-30
JP5337523B2 (ja) 2013-11-06
JP2010193329A (ja) 2010-09-02
US8143924B2 (en) 2012-03-27

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