KR101209311B1 - 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 - Google Patents

반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 Download PDF

Info

Publication number
KR101209311B1
KR101209311B1 KR1020077024955A KR20077024955A KR101209311B1 KR 101209311 B1 KR101209311 B1 KR 101209311B1 KR 1020077024955 A KR1020077024955 A KR 1020077024955A KR 20077024955 A KR20077024955 A KR 20077024955A KR 101209311 B1 KR101209311 B1 KR 101209311B1
Authority
KR
South Korea
Prior art keywords
analysis
information
net
image
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020077024955A
Other languages
English (en)
Korean (ko)
Other versions
KR20080016795A (ko
Inventor
토시유키 마지마
아키라 시마세
히로토시 테라다
카즈히로 호타
마사히로 다케다
Original Assignee
하마마츠 포토닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하마마츠 포토닉스 가부시키가이샤 filed Critical 하마마츠 포토닉스 가부시키가이샤
Publication of KR20080016795A publication Critical patent/KR20080016795A/ko
Application granted granted Critical
Publication of KR101209311B1 publication Critical patent/KR101209311B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Quality & Reliability (AREA)
  • Analytical Chemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020077024955A 2005-06-22 2006-06-20 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 Active KR101209311B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005182627A JP5005893B2 (ja) 2005-06-22 2005-06-22 半導体不良解析装置、不良解析方法、及び不良解析プログラム
JPJP-P-2005-00182627 2005-06-22

Publications (2)

Publication Number Publication Date
KR20080016795A KR20080016795A (ko) 2008-02-22
KR101209311B1 true KR101209311B1 (ko) 2012-12-06

Family

ID=37570420

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077024955A Active KR101209311B1 (ko) 2005-06-22 2006-06-20 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램

Country Status (7)

Country Link
US (1) US20070020781A1 (https=)
EP (1) EP1901079A4 (https=)
JP (1) JP5005893B2 (https=)
KR (1) KR101209311B1 (https=)
CN (1) CN101208608A (https=)
TW (1) TWI462572B (https=)
WO (1) WO2006137391A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160112795A (ko) * 2015-03-20 2016-09-28 한화테크윈 주식회사 전자 부품 실장 궤적 표시 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000104B2 (ja) * 2005-06-22 2012-08-15 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、不良解析プログラム、及び不良解析システム
JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
US7765444B2 (en) * 2006-11-06 2010-07-27 Nec Electronics Corporation Failure diagnosis for logic circuits
JP5155602B2 (ja) * 2007-06-20 2013-03-06 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
JP4917115B2 (ja) 2009-02-18 2012-04-18 ルネサスエレクトロニクス株式会社 半導体集積回路の故障解析方法、故障解析装置、及び故障解析プログラム
CN103855047B (zh) * 2012-12-04 2016-10-26 上海华虹宏力半导体制造有限公司 深沟槽产品的物理分析结构及方法
CN105021970A (zh) * 2015-07-30 2015-11-04 厦门乾照光电股份有限公司 一种发光二极管失效分析解剖装置和解剖方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086689A (ja) 2001-06-27 2003-03-20 Hitachi Ltd 半導体の不良解析用ｃａｄツール及び半導体の不良解析方法
JP2003303746A (ja) 2002-04-08 2003-10-24 Hitachi Ltd 半導体の不良解析方法及びそのシステム並びに半導体の不良解析プログラム

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6185324B1 (en) * 1989-07-12 2001-02-06 Hitachi, Ltd. Semiconductor failure analysis system
US5240866A (en) * 1992-02-03 1993-08-31 At&T Bell Laboratories Method for characterizing failed circuits on semiconductor wafers
JPH0933599A (ja) * 1995-05-15 1997-02-07 Hitachi Ltd パターン検査方法および検査装置
JP2970505B2 (ja) * 1995-11-21 1999-11-02 日本電気株式会社 半導体デバイスの配線電流観測方法、検査方法および装置
US6292582B1 (en) * 1996-05-31 2001-09-18 Lin Youling Method and system for identifying defects in a semiconductor
US20020024603A1 (en) * 1996-10-02 2002-02-28 Nikon Corporation Image processing apparatus, method and recording medium for controlling same
JP4587500B2 (ja) * 1998-11-11 2010-11-24 ルネサスエレクトロニクス株式会社 半導体集積回路、メモリモジュール、記憶媒体、及び半導体集積回路の救済方法
US6539106B1 (en) * 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
US6597381B1 (en) * 1999-07-24 2003-07-22 Intelligent Reasoning Systems, Inc. User interface for automated optical inspection systems
JP3660561B2 (ja) * 1999-11-10 2005-06-15 株式会社東芝 半導体集積回路の故障解析装置
JP3950608B2 (ja) * 2000-01-18 2007-08-01 株式会社ルネサステクノロジ エミッション顕微鏡を用いた不良解析方法およびそのシステム並びに半導体装置の製造方法
JP3678133B2 (ja) * 2000-10-30 2005-08-03 株式会社日立製作所 検査システムおよび半導体デバイスの製造方法
WO2002045092A1 (en) * 2000-11-28 2002-06-06 Advantest Corporation Fail analysis device
US6598211B2 (en) * 2001-03-30 2003-07-22 Intel Corporation Scaleable approach to extracting bridges from a hierarchically described VLSI layout
JP2005533283A (ja) * 2002-07-12 2005-11-04 ケイデンス デザイン システムズ インコーポレイテッド コンテクスト特定のマスク書込のための方法及びシステム
US6891363B2 (en) * 2002-09-03 2005-05-10 Credence Systems Corporation Apparatus and method for detecting photon emissions from transistors
US6943572B2 (en) * 2002-09-03 2005-09-13 Credence Systems Corporation Apparatus and method for detecting photon emissions from transistors
JP4429593B2 (ja) * 2002-11-22 2010-03-10 パナソニック株式会社 半導体装置のレイアウト検証方法
JP3966189B2 (ja) * 2003-02-27 2007-08-29 オムロン株式会社 基板検査方法およびこの方法を用いた基板検査装置
JP2004355717A (ja) * 2003-05-29 2004-12-16 Renesas Technology Corp 半導体装置の不良解析方法
US7155689B2 (en) * 2003-10-07 2006-12-26 Magma Design Automation, Inc. Design-manufacturing interface via a unified model
JP2005158780A (ja) * 2003-11-20 2005-06-16 Hitachi Ltd パターン欠陥検査方法及びその装置
US20060098862A1 (en) * 2004-11-10 2006-05-11 International Business Machines Corporation Nanoscale defect image detection for semiconductors
JP5006520B2 (ja) * 2005-03-22 2012-08-22 株式会社日立ハイテクノロジーズ 欠陥観察装置及び欠陥観察装置を用いた欠陥観察方法
JP5000104B2 (ja) * 2005-06-22 2012-08-15 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、不良解析プログラム、及び不良解析システム
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086689A (ja) 2001-06-27 2003-03-20 Hitachi Ltd 半導体の不良解析用ｃａｄツール及び半導体の不良解析方法
JP2003303746A (ja) 2002-04-08 2003-10-24 Hitachi Ltd 半導体の不良解析方法及びそのシステム並びに半導体の不良解析プログラム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160112795A (ko) * 2015-03-20 2016-09-28 한화테크윈 주식회사 전자 부품 실장 궤적 표시 방법
KR102389663B1 (ko) 2015-03-20 2022-04-21 한화정밀기계 주식회사 전자 부품 실장 궤적 표시 방법

Also Published As

Publication number Publication date
TWI462572B (zh) 2014-11-21
WO2006137391A1 (ja) 2006-12-28
JP5005893B2 (ja) 2012-08-22
TW200708069A (en) 2007-02-16
KR20080016795A (ko) 2008-02-22
CN101208608A (zh) 2008-06-25
JP2007005497A (ja) 2007-01-11
EP1901079A1 (en) 2008-03-19
EP1901079A4 (en) 2015-10-07
US20070020781A1 (en) 2007-01-25

Similar Documents

Publication Publication Date Title
KR101277407B1 (ko) 반도체 불량 해석 장치, 불량 해석 방법, 불량 해석프로그램 및 불량 해석 시스템
JP5091430B2 (ja) 半導体不良解析装置、不良解析方法、及び不良解析プログラム
KR101209311B1 (ko) 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램
KR101276011B1 (ko) 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석 프로그램
US7865012B2 (en) Semiconductor failure analysis apparatus which acquires a failure observed image, failure analysis method, and failure analysis program
JP5155602B2 (ja) 半導体不良解析装置、不良解析方法、及び不良解析プログラム
JP4216902B1 (ja) 半導体不良解析装置、不良解析方法、及び不良解析プログラム

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20151102

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20171107

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20181121

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20191120

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000