KR101209311B1 - 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 - Google Patents

반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 Download PDF

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KR101209311B1
KR101209311B1 KR1020077024955A KR20077024955A KR101209311B1 KR 101209311 B1 KR101209311 B1 KR 101209311B1 KR 1020077024955 A KR1020077024955 A KR 1020077024955A KR 20077024955 A KR20077024955 A KR 20077024955A KR 101209311 B1 KR101209311 B1 KR 101209311B1
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semiconductor device
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KR20080016795A (ko
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토시유키 마지마
아키라 시마세
히로토시 테라다
카즈히로 호타
마사히로 다케다
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하마마츠 포토닉스 가부시키가이샤
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/001Industrial image inspection using an image reference approach
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • Computer Vision & Pattern Recognition (AREA)
  • Pathology (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020077024955A 2005-06-22 2006-06-20 반도체 불량 해석 장치, 불량 해석 방법 및 불량 해석프로그램 Active KR101209311B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2005-00182627 2005-06-22
JP2005182627A JP5005893B2 (ja) 2005-06-22 2005-06-22 半導体不良解析装置、不良解析方法、及び不良解析プログラム

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KR20080016795A KR20080016795A (ko) 2008-02-22
KR101209311B1 true KR101209311B1 (ko) 2012-12-06

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Country Status (7)

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US (1) US20070020781A1 (enExample)
EP (1) EP1901079A4 (enExample)
JP (1) JP5005893B2 (enExample)
KR (1) KR101209311B1 (enExample)
CN (1) CN101208608A (enExample)
TW (1) TWI462572B (enExample)
WO (1) WO2006137391A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160112795A (ko) * 2015-03-20 2016-09-28 한화테크윈 주식회사 전자 부품 실장 궤적 표시 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000104B2 (ja) * 2005-06-22 2012-08-15 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、不良解析プログラム、及び不良解析システム
JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
US7765444B2 (en) * 2006-11-06 2010-07-27 Nec Electronics Corporation Failure diagnosis for logic circuits
JP5155602B2 (ja) * 2007-06-20 2013-03-06 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム
JP4917115B2 (ja) 2009-02-18 2012-04-18 ルネサスエレクトロニクス株式会社 半導体集積回路の故障解析方法、故障解析装置、及び故障解析プログラム
CN103855047B (zh) * 2012-12-04 2016-10-26 上海华虹宏力半导体制造有限公司 深沟槽产品的物理分析结构及方法
CN105021970A (zh) * 2015-07-30 2015-11-04 厦门乾照光电股份有限公司 一种发光二极管失效分析解剖装置和解剖方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086689A (ja) 2001-06-27 2003-03-20 Hitachi Ltd 半導体の不良解析用cadツール及び半導体の不良解析方法
JP2003303746A (ja) 2002-04-08 2003-10-24 Hitachi Ltd 半導体の不良解析方法及びそのシステム並びに半導体の不良解析プログラム

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6185324B1 (en) * 1989-07-12 2001-02-06 Hitachi, Ltd. Semiconductor failure analysis system
US5240866A (en) * 1992-02-03 1993-08-31 At&T Bell Laboratories Method for characterizing failed circuits on semiconductor wafers
JPH0933599A (ja) * 1995-05-15 1997-02-07 Hitachi Ltd パターン検査方法および検査装置
JP2970505B2 (ja) * 1995-11-21 1999-11-02 日本電気株式会社 半導体デバイスの配線電流観測方法、検査方法および装置
US6292582B1 (en) * 1996-05-31 2001-09-18 Lin Youling Method and system for identifying defects in a semiconductor
US20020024603A1 (en) * 1996-10-02 2002-02-28 Nikon Corporation Image processing apparatus, method and recording medium for controlling same
JP4587500B2 (ja) * 1998-11-11 2010-11-24 ルネサスエレクトロニクス株式会社 半導体集積回路、メモリモジュール、記憶媒体、及び半導体集積回路の救済方法
US6539106B1 (en) * 1999-01-08 2003-03-25 Applied Materials, Inc. Feature-based defect detection
US6597381B1 (en) * 1999-07-24 2003-07-22 Intelligent Reasoning Systems, Inc. User interface for automated optical inspection systems
JP3660561B2 (ja) * 1999-11-10 2005-06-15 株式会社東芝 半導体集積回路の故障解析装置
JP3950608B2 (ja) * 2000-01-18 2007-08-01 株式会社ルネサステクノロジ エミッション顕微鏡を用いた不良解析方法およびそのシステム並びに半導体装置の製造方法
JP3678133B2 (ja) * 2000-10-30 2005-08-03 株式会社日立製作所 検査システムおよび半導体デバイスの製造方法
US7079971B2 (en) * 2000-11-28 2006-07-18 Advantest Corporation Fail analysis device
US6598211B2 (en) * 2001-03-30 2003-07-22 Intel Corporation Scaleable approach to extracting bridges from a hierarchically described VLSI layout
AU2003256531A1 (en) * 2002-07-12 2004-02-02 Cadence Design Systems, Inc. Method and system for context-specific mask writing
US6943572B2 (en) * 2002-09-03 2005-09-13 Credence Systems Corporation Apparatus and method for detecting photon emissions from transistors
US6891363B2 (en) * 2002-09-03 2005-05-10 Credence Systems Corporation Apparatus and method for detecting photon emissions from transistors
JP4429593B2 (ja) * 2002-11-22 2010-03-10 パナソニック株式会社 半導体装置のレイアウト検証方法
JP3966189B2 (ja) * 2003-02-27 2007-08-29 オムロン株式会社 基板検査方法およびこの方法を用いた基板検査装置
JP2004355717A (ja) * 2003-05-29 2004-12-16 Renesas Technology Corp 半導体装置の不良解析方法
US7155689B2 (en) * 2003-10-07 2006-12-26 Magma Design Automation, Inc. Design-manufacturing interface via a unified model
JP2005158780A (ja) * 2003-11-20 2005-06-16 Hitachi Ltd パターン欠陥検査方法及びその装置
US20060098862A1 (en) * 2004-11-10 2006-05-11 International Business Machines Corporation Nanoscale defect image detection for semiconductors
JP5006520B2 (ja) * 2005-03-22 2012-08-22 株式会社日立ハイテクノロジーズ 欠陥観察装置及び欠陥観察装置を用いた欠陥観察方法
JP5000104B2 (ja) * 2005-06-22 2012-08-15 浜松ホトニクス株式会社 半導体不良解析装置、不良解析方法、不良解析プログラム、及び不良解析システム
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
JP4931483B2 (ja) * 2006-06-14 2012-05-16 ルネサスエレクトロニクス株式会社 半導体不良解析装置、不良解析方法、及び不良解析プログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086689A (ja) 2001-06-27 2003-03-20 Hitachi Ltd 半導体の不良解析用cadツール及び半導体の不良解析方法
JP2003303746A (ja) 2002-04-08 2003-10-24 Hitachi Ltd 半導体の不良解析方法及びそのシステム並びに半導体の不良解析プログラム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160112795A (ko) * 2015-03-20 2016-09-28 한화테크윈 주식회사 전자 부품 실장 궤적 표시 방법
KR102389663B1 (ko) 2015-03-20 2022-04-21 한화정밀기계 주식회사 전자 부품 실장 궤적 표시 방법

Also Published As

Publication number Publication date
CN101208608A (zh) 2008-06-25
TWI462572B (zh) 2014-11-21
WO2006137391A1 (ja) 2006-12-28
TW200708069A (en) 2007-02-16
JP5005893B2 (ja) 2012-08-22
US20070020781A1 (en) 2007-01-25
KR20080016795A (ko) 2008-02-22
JP2007005497A (ja) 2007-01-11
EP1901079A4 (en) 2015-10-07
EP1901079A1 (en) 2008-03-19

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