KR101200566B1 - 차단재 연마 용액 - Google Patents

차단재 연마 용액 Download PDF

Info

Publication number
KR101200566B1
KR101200566B1 KR1020050032664A KR20050032664A KR101200566B1 KR 101200566 B1 KR101200566 B1 KR 101200566B1 KR 1020050032664 A KR1020050032664 A KR 1020050032664A KR 20050032664 A KR20050032664 A KR 20050032664A KR 101200566 B1 KR101200566 B1 KR 101200566B1
Authority
KR
South Korea
Prior art keywords
acid
polishing
weight
abrasive
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020050032664A
Other languages
English (en)
Korean (ko)
Other versions
KR20060047259A (ko
Inventor
전둥 류
존 퀀씨
로버트 이. 슈미트
테렌스 엠. 토마스
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20060047259A publication Critical patent/KR20060047259A/ko
Application granted granted Critical
Publication of KR101200566B1 publication Critical patent/KR101200566B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00—Baking; Roasting; Grilling; Frying
    • A47J37/06—Roasters; Grills; Sandwich grills
    • A47J37/07—Roasting devices for outdoor use; Barbecues
    • A47J37/0704—Roasting devices for outdoor use; Barbecues with horizontal fire box
    • A47J37/0713—Roasting devices for outdoor use; Barbecues with horizontal fire box with gas burners
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00—Baking; Roasting; Grilling; Frying
    • A47J37/06—Roasters; Grills; Sandwich grills
    • A47J37/07—Roasting devices for outdoor use; Barbecues
    • A47J37/0786—Accessories
    • A47J2037/0795—Adjustable food supports, e.g. for height adjustment
    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J37/00—Baking; Roasting; Grilling; Frying
    • A47J37/06—Roasters; Grills; Sandwich grills
    • A47J37/07—Roasting devices for outdoor use; Barbecues
    • A47J37/0786—Accessories

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Food Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020050032664A 2004-04-21 2005-04-20 차단재 연마 용액 Expired - Lifetime KR101200566B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/830,268 2004-04-21
US10/830,268 US7253111B2 (en) 2004-04-21 2004-04-21 Barrier polishing solution

Publications (2)

Publication Number Publication Date
KR20060047259A KR20060047259A (ko) 2006-05-18
KR101200566B1 true KR101200566B1 (ko) 2012-11-13

Family

ID=34954976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050032664A Expired - Lifetime KR101200566B1 (ko) 2004-04-21 2005-04-20 차단재 연마 용액

Country Status (7)

Country Link
US (1) US7253111B2 (enExample)
JP (1) JP4761815B2 (enExample)
KR (1) KR101200566B1 (enExample)
CN (1) CN1696235B (enExample)
DE (1) DE102005016554A1 (enExample)
FR (1) FR2869456B1 (enExample)
TW (1) TWI363789B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
KR20060016498A (ko) * 2004-08-18 2006-02-22 삼성전자주식회사 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5026665B2 (ja) * 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
US20070068901A1 (en) * 2005-09-29 2007-03-29 Wang Yuchun Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries
US8211844B2 (en) * 2005-10-21 2012-07-03 Freescale Semiconductor, Inc. Method for cleaning a semiconductor structure and chemistry thereof
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
JP5030431B2 (ja) * 2006-02-08 2012-09-19 富士フイルム株式会社 研磨用組成物
US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
WO2007122585A2 (en) * 2006-04-26 2007-11-01 Nxp B.V. Method of manufacturing a semiconductor device, semiconductor device obtained herewith, and slurry suitable for use in such a method
KR101032504B1 (ko) * 2006-06-30 2011-05-04 주식회사 엘지화학 Ｃｍｐ 슬러리
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2009088080A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 化学的機械的研磨用研磨液
JP2009088243A (ja) * 2007-09-28 2009-04-23 Fujifilm Corp 研磨液
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
JP5441345B2 (ja) * 2008-03-27 2014-03-12 富士フイルム株式会社 研磨液、及び研磨方法
KR101247890B1 (ko) * 2008-09-19 2013-03-26 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전체를 위한 장벽 슬러리
CN102471686B (zh) * 2009-07-22 2014-08-27 东友Fine-Chem股份有限公司 用于形成金属线的蚀刻组合物
DE102009040651A1 (de) 2009-09-09 2011-04-14 Bergmann, Henry, Prof. Dr. Verfahren zur gemeinsamen und selektiven Herstellung von Bromat und Perbromat mittels anodischer Oxidation
US8025813B2 (en) * 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
WO2014168037A1 (ja) * 2013-04-12 2014-10-16 三菱瓦斯化学株式会社 銅およびチタンを含む多層膜のエッチングに使用される液体組成物、および該組成物を用いたエッチング方法、多層膜配線の製造方法、基板
US9388328B2 (en) * 2013-08-23 2016-07-12 Diamond Innovations, Inc. Lapping slurry having a cationic surfactant
CN104647197B (zh) * 2013-11-22 2019-01-04 安集微电子（上海）有限公司 一种用于抛光钽的化学机械抛光方法
JP6707451B2 (ja) 2013-12-11 2020-06-10 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面の残留物を除去するための洗浄配合物
WO2015119925A1 (en) * 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US9275899B2 (en) 2014-06-27 2016-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing tungsten
KR101682085B1 (ko) * 2015-07-09 2016-12-02 주식회사 케이씨텍 텅스텐 연마용 슬러리 조성물
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
CN111378371B (zh) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 一种焦性没食子酸在二氧化硅抛光中的用途
CN115101471A (zh) * 2022-03-21 2022-09-23 康劲 一种用于多层铜互连cmp的工艺控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040020134A1 (en) * 2000-10-12 2004-02-05 Sang-Yong Kim Cmp slurry composition and a method for planarizing semiconductor device using the same
US20040203324A1 (en) * 2003-04-11 2004-10-14 Smith Dennis E. Polishing compositions comprising polymeric cores having inorganic surface particles and method of use

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5769689A (en) * 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5863838A (en) * 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6322600B1 (en) * 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
WO1999067056A1 (en) 1998-06-23 1999-12-29 Arch Specialty Chemicals, Inc. Composition for the chemical mechanical polishing of metal layers
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
WO2000024842A1 (en) 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6136714A (en) * 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
DE19927286B4 (de) * 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
JP4505891B2 (ja) 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US6376361B1 (en) * 1999-10-18 2002-04-23 Chartered Semiconductor Manufacturing Ltd. Method to remove excess metal in the formation of damascene and dual interconnects
US6679761B1 (en) 1999-11-04 2004-01-20 Seimi Chemical Co., Ltd. Polishing compound for semiconductor containing peptide
US6492308B1 (en) 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
US6592433B2 (en) * 1999-12-31 2003-07-15 Intel Corporation Method for defect reduction
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
KR100400030B1 (ko) * 2000-06-05 2003-09-29 삼성전자주식회사 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
US20020020134A1 (en) * 2000-08-08 2002-02-21 Collard Richard W. Building truss structure
US6602117B1 (en) 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
US6605537B2 (en) * 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US20020042199A1 (en) * 2000-09-20 2002-04-11 Jinru Bian Polishing by CMP for optimized planarization
DE10063488A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Siliciumdioxid-Filmen
US20020104269A1 (en) 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
JP2002231666A (ja) 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US6821309B2 (en) 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US20040147188A1 (en) * 2003-01-28 2004-07-29 3M Innovative Properties Company Fluorochemical urethane composition for treatment of fibrous substrates
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
JP5036955B2 (ja) * 2003-12-19 2012-09-26 ニッタ・ハース株式会社 金属膜研磨組成物および金属膜の研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040020134A1 (en) * 2000-10-12 2004-02-05 Sang-Yong Kim Cmp slurry composition and a method for planarizing semiconductor device using the same
US20040203324A1 (en) * 2003-04-11 2004-10-14 Smith Dennis E. Polishing compositions comprising polymeric cores having inorganic surface particles and method of use

Also Published As

Publication number Publication date
FR2869456A1 (fr) 2005-10-28
US7253111B2 (en) 2007-08-07
FR2869456B1 (fr) 2006-11-10
DE102005016554A1 (de) 2005-11-10
CN1696235B (zh) 2014-04-09
TWI363789B (en) 2012-05-11
CN1696235A (zh) 2005-11-16
JP2005328043A (ja) 2005-11-24
JP4761815B2 (ja) 2011-08-31
US20050236601A1 (en) 2005-10-27
TW200535203A (en) 2005-11-01
KR20060047259A (ko) 2006-05-18

Similar Documents

Publication Publication Date Title
KR101200566B1 (ko) 차단재 연마 용액
US7842192B2 (en) Multi-component barrier polishing solution
JP4681261B2 (ja) 半導体層を研磨するための組成物
KR101020613B1 (ko) 탄탈 배리어 제거 용액
TWI478227B (zh) 用於基板之化學機械研磨之方法
JP2008172222A (ja) ルテニウムバリヤ研磨スラリー
KR20050046620A (ko) 구리 연마용 조성물 및 방법
US7427362B2 (en) Corrosion-resistant barrier polishing solution
WO2004076575A2 (en) Modular barrier removal polishing slurry
JP2006196887A (ja) ケミカルメカニカルポリッシングのための選択的スラリー
JP2009164186A (ja) 研磨用組成物
JP2010153865A (ja) バリヤ除去ポリマー研磨スラリー
KR20050043666A (ko) 배리어를 제거하기 위한 조성물 및 방법
US20060110923A1 (en) Barrier polishing solution
KR100738842B1 (ko) 연마 조성물 및 그를 이용한 연마 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20161019

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20171018

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20181018

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20250421

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION