KR101175843B1 - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

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Publication number
KR101175843B1
KR101175843B1 KR1020107001058A KR20107001058A KR101175843B1 KR 101175843 B1 KR101175843 B1 KR 101175843B1 KR 1020107001058 A KR1020107001058 A KR 1020107001058A KR 20107001058 A KR20107001058 A KR 20107001058A KR 101175843 B1 KR101175843 B1 KR 101175843B1
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KR
South Korea
Prior art keywords
magnetic field
cylindrical
field generating
cylindrical target
target
Prior art date
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Expired - Fee Related
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KR1020107001058A
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English (en)
Korean (ko)
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KR20100027222A (ko
Inventor
히로시 다마가끼
Original Assignee
가부시키가이샤 고베 세이코쇼
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Publication of KR20100027222A publication Critical patent/KR20100027222A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020107001058A 2007-07-20 2008-05-29 스퍼터링 장치 Expired - Fee Related KR101175843B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-189471 2007-07-20
JP2007189471A JP2009024230A (ja) 2007-07-20 2007-07-20 スパッタリング装置
PCT/JP2008/059880 WO2009013935A1 (ja) 2007-07-20 2008-05-29 スパッタリング装置

Publications (2)

Publication Number Publication Date
KR20100027222A KR20100027222A (ko) 2010-03-10
KR101175843B1 true KR101175843B1 (ko) 2012-08-24

Family

ID=40281195

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001058A Expired - Fee Related KR101175843B1 (ko) 2007-07-20 2008-05-29 스퍼터링 장치

Country Status (6)

Country Link
US (1) US20100181191A1 (https=)
JP (1) JP2009024230A (https=)
KR (1) KR101175843B1 (https=)
CN (1) CN101755071B (https=)
DE (1) DE112008001930T5 (https=)
WO (1) WO2009013935A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101494223B1 (ko) 2013-01-31 2015-02-17 (주)에스엔텍 원통형 플라즈마 캐소드 장치

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240782B2 (ja) * 2009-05-18 2013-07-17 株式会社神戸製鋼所 連続成膜装置
JP5527894B2 (ja) * 2010-09-01 2014-06-25 株式会社アルバック スパッタ装置
KR101273771B1 (ko) * 2010-11-09 2013-06-12 경희대학교 산학협력단 롤투롤 스퍼터링 시스템
KR20150103383A (ko) * 2011-02-23 2015-09-10 가부시키가이샤 고베 세이코쇼 아크식 증발원
CN103160792B (zh) * 2011-12-12 2017-02-08 许聪波 镀膜装置
WO2013135265A1 (en) * 2012-03-12 2013-09-19 Applied Materials, Inc. Mini rotatable sputter devices for sputter deposition
KR20150023472A (ko) * 2012-05-29 2015-03-05 어플라이드 머티어리얼스, 인코포레이티드 기판 코팅 방법 및 코팅기
KR102150455B1 (ko) * 2013-04-23 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 이를 포함하는 증착장치
KR102150456B1 (ko) * 2013-04-30 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 방법
CN103409725A (zh) * 2013-05-22 2013-11-27 东莞宏威数码机械有限公司 旋转异形靶阴极机构及磁控溅射镀膜装置
PL2811507T3 (pl) * 2013-06-07 2020-09-07 Soleras Advanced Coatings Bvba Konfiguracja magnesów dla systemu magnetronowego do napylania jonowego
EP2811509A1 (en) * 2013-06-07 2014-12-10 Soleras Advanced Coatings bvba Electronic configuration for magnetron sputter deposition systems
JP6309353B2 (ja) * 2014-06-06 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法
US9928997B2 (en) 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition
JP6209286B2 (ja) * 2015-03-20 2017-10-04 芝浦メカトロニクス株式会社 成膜装置及び成膜ワーク製造方法
KR101716848B1 (ko) * 2015-09-18 2017-03-15 이만호 공간형 이온 빔 발생 장치
JP2018532890A (ja) * 2015-10-25 2018-11-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上での真空堆積のための装置及び真空堆積中に基板をマスキングするための方法
DE102016101717A1 (de) * 2016-02-01 2017-08-03 Von Ardenne Gmbh Sputteranordnung
KR20200036065A (ko) 2016-03-30 2020-04-06 케이힌 람테크 가부시키가이샤 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법
EP3452634B1 (en) * 2016-05-02 2023-09-06 Applied Materials, Inc. Magnetron sputtering method
CN106906447A (zh) * 2016-12-27 2017-06-30 王开安 磁控溅射镀膜源及其装置与方法
CN108456867A (zh) * 2018-06-22 2018-08-28 广东腾胜真空技术工程有限公司 配置辅助阳极的低温沉积设备
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
JP7530724B2 (ja) * 2019-03-26 2024-08-08 日東電工株式会社 マグネトロンプラズマ成膜装置
JP2022544641A (ja) * 2019-06-24 2022-10-20 アプライド マテリアルズ インコーポレイテッド 基板上に材料を堆積する方法
WO2022194377A1 (en) * 2021-03-18 2022-09-22 Applied Materials, Inc. Method of depositing material on a substrate
CN113403595A (zh) * 2021-06-01 2021-09-17 无锡爱尔华光电科技有限公司 一种旋转镜像靶磁控溅射设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPH0368113A (ja) 1989-08-07 1991-03-25 Mitsubishi Electric Corp 油入電気機器
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
EP0822996B1 (en) * 1995-04-25 2003-07-02 VON ARDENNE ANLAGENTECHNIK GmbH Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
DE10213049A1 (de) * 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
WO2004005574A2 (en) * 2002-07-02 2004-01-15 Academy Precision Materials A Division Of Academy Corporation Rotary target and method for onsite mechanical assembly of rotary target
DE502005000983D1 (de) * 2005-05-13 2007-08-16 Applied Materials Gmbh & Co Kg Verfahren zum Betreiben einer Sputterkathode mit einem Target
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101494223B1 (ko) 2013-01-31 2015-02-17 (주)에스엔텍 원통형 플라즈마 캐소드 장치

Also Published As

Publication number Publication date
US20100181191A1 (en) 2010-07-22
JP2009024230A (ja) 2009-02-05
CN101755071A (zh) 2010-06-23
WO2009013935A1 (ja) 2009-01-29
CN101755071B (zh) 2012-03-21
DE112008001930T5 (de) 2010-07-08
KR20100027222A (ko) 2010-03-10

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