WO2009013935A1 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
WO2009013935A1
WO2009013935A1 PCT/JP2008/059880 JP2008059880W WO2009013935A1 WO 2009013935 A1 WO2009013935 A1 WO 2009013935A1 JP 2008059880 W JP2008059880 W JP 2008059880W WO 2009013935 A1 WO2009013935 A1 WO 2009013935A1
Authority
WO
WIPO (PCT)
Prior art keywords
targets
cylindrical
field generating
magnetic field
cylindrical target
Prior art date
Application number
PCT/JP2008/059880
Other languages
English (en)
French (fr)
Inventor
Hiroshi Tamagaki
Original Assignee
Kabushiki Kaisha Kobe Seiko Sho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Kobe Seiko Sho filed Critical Kabushiki Kaisha Kobe Seiko Sho
Priority to US12/668,914 priority Critical patent/US20100181191A1/en
Priority to KR1020107001058A priority patent/KR101175843B1/ko
Priority to DE112008001930T priority patent/DE112008001930T5/de
Priority to CN200880025385XA priority patent/CN101755071B/zh
Publication of WO2009013935A1 publication Critical patent/WO2009013935A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

この発明は、回転可能な円筒状ターゲットの軸方向端部における局所消耗を抑制してこの円筒状ターゲットにおけるエロージョン領域を均一化することにより、その使用寿命を向上させることができるスパッタリング装置の提供を目的とする。この装置は、回転可能な円筒状ターゲット１３及びその内側に配置される磁場発生部材１４をそれぞれ有する一対のスパッタ蒸発源２と、円筒状ターゲット１３をカソードとしてこれに放電電力を供給するスパッタ電源３とを備える。両円筒状ターゲット１３は、その中心軸同士が互いに平行となるように配置され、各磁場発生部材１４は、円筒状ターゲット１３の表面を通って互いに引き合う向きの磁力線をもつ磁場を発生させる。
PCT/JP2008/059880 2007-07-20 2008-05-29 スパッタリング装置 WO2009013935A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/668,914 US20100181191A1 (en) 2007-07-20 2008-05-29 Sputtering apparatus
KR1020107001058A KR101175843B1 (ko) 2007-07-20 2008-05-29 스퍼터링 장치
DE112008001930T DE112008001930T5 (de) 2007-07-20 2008-05-29 Sputtergerät
CN200880025385XA CN101755071B (zh) 2007-07-20 2008-05-29 溅射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007189471A JP2009024230A (ja) 2007-07-20 2007-07-20 スパッタリング装置
JP2007-189471 2007-07-20

Publications (1)

Publication Number Publication Date
WO2009013935A1 true WO2009013935A1 (ja) 2009-01-29

Family

ID=40281195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059880 WO2009013935A1 (ja) 2007-07-20 2008-05-29 スパッタリング装置

Country Status (6)

Country Link
US (1) US20100181191A1 (ja)
JP (1) JP2009024230A (ja)
KR (1) KR101175843B1 (ja)
CN (1) CN101755071B (ja)
DE (1) DE112008001930T5 (ja)
WO (1) WO2009013935A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240782B2 (ja) * 2009-05-18 2013-07-17 株式会社神戸製鋼所 連続成膜装置
JP5527894B2 (ja) * 2010-09-01 2014-06-25 株式会社アルバック スパッタ装置
KR101273771B1 (ko) * 2010-11-09 2013-06-12 경희대학교 산학협력단 롤투롤 스퍼터링 시스템
MX363412B (es) * 2011-02-23 2019-03-22 Kobe Steel Ltd Fuente de evaporacion por arco.
CN103160792B (zh) * 2011-12-12 2017-02-08 许聪波 镀膜装置
US20160189939A1 (en) * 2012-03-12 2016-06-30 Applied Materials, Inc. Mini rotatable sputter devices for sputter deposition
JP2015524022A (ja) * 2012-05-29 2015-08-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板をコーティングするための方法とコーター
KR101494223B1 (ko) 2013-01-31 2015-02-17 (주)에스엔텍 원통형 플라즈마 캐소드 장치
KR102150455B1 (ko) * 2013-04-23 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 이를 포함하는 증착장치
KR102150456B1 (ko) * 2013-04-30 2020-09-01 주식회사 선익시스템 스퍼터링 장치 및 방법
CN103409725A (zh) * 2013-05-22 2013-11-27 东莞宏威数码机械有限公司 旋转异形靶阴极机构及磁控溅射镀膜装置
EP2811507B1 (en) * 2013-06-07 2020-02-19 Soleras Advanced Coatings bvba Magnetic configuration for a magnetron sputter deposition system
EP2811509A1 (en) * 2013-06-07 2014-12-10 Soleras Advanced Coatings bvba Electronic configuration for magnetron sputter deposition systems
JP6309353B2 (ja) * 2014-06-06 2018-04-11 株式会社Ｓｃｒｅｅｎホールディングス スパッタリング装置およびスパッタリング方法
US9928997B2 (en) 2014-12-14 2018-03-27 Applied Materials, Inc. Apparatus for PVD dielectric deposition
WO2016152395A1 (ja) * 2015-03-20 2016-09-29 芝浦メカトロニクス株式会社 成膜装置及び成膜ワーク製造方法
KR101716848B1 (ko) * 2015-09-18 2017-03-15 이만호 공간형 이온 빔 발생 장치
CN108138304A (zh) * 2015-10-25 2018-06-08 应用材料公司 用于在基板上真空沉积的设备和用于在真空沉积期间掩蔽基板的方法
DE102016101717A1 (de) * 2016-02-01 2017-08-03 Von Ardenne Gmbh Sputteranordnung
CN107614747B (zh) 2016-03-30 2019-06-11 京浜乐梦金属科技株式会社 溅射阴极、溅射装置和成膜体的制造方法
CN108884558B (zh) * 2016-05-02 2022-03-08 应用材料公司 涂布基板的方法和用于涂布基板的涂布设备
CN106906447A (zh) * 2016-12-27 2017-06-30 王开安 磁控溅射镀膜源及其装置与方法
CN108456867A (zh) * 2018-06-22 2018-08-28 广东腾胜真空技术工程有限公司 配置辅助阳极的低温沉积设备
DE102018213534A1 (de) * 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
JP2020164985A (ja) * 2019-03-26 2020-10-08 日東電工株式会社 マグネトロンプラズマ成膜装置
US20220246411A1 (en) * 2019-06-24 2022-08-04 Applied Materials, Inc. Method of depositing a material on a substrate
CN113403595A (zh) * 2021-06-01 2021-09-17 无锡爱尔华光电科技有限公司 一种旋转镜像靶磁控溅射设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
JP2006316340A (ja) * 2005-05-13 2006-11-24 Applied Materials Gmbh & Co Kg ターゲットを含むスパッタ・カソードの操作方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JPH0368113A (ja) 1989-08-07 1991-03-25 Mitsubishi Electric Corp 油入電気機器
EP0822996B1 (en) * 1995-04-25 2003-07-02 VON ARDENNE ANLAGENTECHNIK GmbH Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
US20040074770A1 (en) * 2002-07-02 2004-04-22 George Wityak Rotary target

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104864A (ja) * 1989-09-18 1991-05-01 Hitachi Ltd スパッタリングカソード
JP2005520935A (ja) * 2002-03-22 2005-07-14 ヴルチンガー・ディーター 回転可能な管状カソード
JP2006316340A (ja) * 2005-05-13 2006-11-24 Applied Materials Gmbh & Co Kg ターゲットを含むスパッタ・カソードの操作方法
JP2007031817A (ja) * 2005-07-29 2007-02-08 Ulvac Japan Ltd スパッタリング装置及びスパッタリング方法

Also Published As

Publication number Publication date
CN101755071A (zh) 2010-06-23
JP2009024230A (ja) 2009-02-05
KR20100027222A (ko) 2010-03-10
KR101175843B1 (ko) 2012-08-24
DE112008001930T5 (de) 2010-07-08
US20100181191A1 (en) 2010-07-22
CN101755071B (zh) 2012-03-21

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