ES2652141T3 - Configuración magnética modificable para fuentes de evaporación por arco - Google Patents
Configuración magnética modificable para fuentes de evaporación por arco Download PDFInfo
- Publication number
- ES2652141T3 ES2652141T3 ES09799555.9T ES09799555T ES2652141T3 ES 2652141 T3 ES2652141 T3 ES 2652141T3 ES 09799555 T ES09799555 T ES 09799555T ES 2652141 T3 ES2652141 T3 ES 2652141T3
- Authority
- ES
- Spain
- Prior art keywords
- permanent magnets
- target
- marginal
- annular coil
- coating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/338—Changing chemical properties of treated surfaces
- H01J2237/3387—Nitriding
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Treatment Devices (AREA)
Abstract
Fuente de evaporación por arco con una disposición de campo magnético prevista en un blanco (2) a partir de un material de revestimiento para la generación de campos magnéticos en y por encima de la superficie de blanco, comprendiendo la disposición de campo magnético imanes permanentes centrales (5a), imanes permanentes marginales (5) y al menos una bobina anular (4) dispuesta detrás del blanco, cuyo diámetro interior limitado por los devanados es preferentemente menor o igual, en todo caso no considerablemente mayor que el diámetro del blanco, caracterizada por que los imanes permanentes marginales (5) y los imanes permanentes centrales (5a) pueden desplazarse esencialmente en perpendicular a la superficie del blanco (2) de manera que se alejan del blanco (2) y la proyección de los imanes permanentes marginales (5) hacia la superficie de blanco en comparación con la proyección de la bobina anular (4) hacia la superficie de blanco está alejada adicionalmente del centro de la superficie de blanco, pudiendo realizarse la capacidad de desplazamiento de los imanes permanentes marginales (5) y de los imanes permanentes centrales independientemente de la bobina anular (4), y estando configurada la disposición magnética de tal modo que en un primer ajuste de la disposición de campo magnético, los imanes permanentes centrales (5a) y los imanes permanentes marginales (5) pueden adoptar una primera posición en la que los polos de los imanes permanentes (5, 5a) están lo más próximos al material de revestimiento, y encontrándose los polos de los imanes permanentes (5, 5a) esencialmente en un plano en el que también se encuentra un extremo de la bobina anular (4), el cual está lo más próximo al material de revestimiento.
Description
Claims (1)
-
imagen1 imagen2
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009008161 | 2009-02-09 | ||
DE102009008161A DE102009008161A1 (de) | 2009-02-09 | 2009-02-09 | Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen |
PCT/EP2009/009319 WO2010088947A1 (de) | 2009-02-09 | 2009-12-30 | Modifizierbare magnetkonfiguration für arc-verdampungsquellen |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2652141T3 true ES2652141T3 (es) | 2018-01-31 |
Family
ID=41647035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES09799555.9T Active ES2652141T3 (es) | 2009-02-09 | 2009-12-30 | Configuración magnética modificable para fuentes de evaporación por arco |
Country Status (17)
Country | Link |
---|---|
US (2) | US11264216B2 (es) |
EP (1) | EP2394288B1 (es) |
JP (1) | JP5608176B2 (es) |
KR (2) | KR20110135919A (es) |
CN (1) | CN102308359B (es) |
AU (1) | AU2009339328B2 (es) |
BR (1) | BRPI0924299A2 (es) |
CA (1) | CA2751811C (es) |
DE (1) | DE102009008161A1 (es) |
ES (1) | ES2652141T3 (es) |
HU (1) | HUE034774T2 (es) |
MX (1) | MX2011008408A (es) |
PL (1) | PL2394288T3 (es) |
PT (1) | PT2394288T (es) |
RU (1) | RU2550502C2 (es) |
SG (2) | SG2014008999A (es) |
WO (1) | WO2010088947A1 (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009008161A1 (de) * | 2009-02-09 | 2010-08-12 | Oerlikon Trading Ag, Trübbach | Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen |
JP5035479B2 (ja) * | 2011-01-27 | 2012-09-26 | 三菱マテリアル株式会社 | 耐欠損性、耐摩耗性にすぐれた表面被覆切削工具 |
MX347702B (es) * | 2011-06-30 | 2017-05-09 | Oerlikon Surface Solutions Ag Pfäffikon | Recubrimiento de nanocapas para herramientas de alto rendimiento. |
US9953808B2 (en) | 2013-04-30 | 2018-04-24 | Nippon Itf, Inc. | Arc evaporation source |
CN103556122B (zh) * | 2013-10-23 | 2017-01-18 | 苏州矩阵光电有限公司 | 一种自适应磁场调整型磁控溅射镀膜设备及其镀膜方法 |
JP6403269B2 (ja) * | 2014-07-30 | 2018-10-10 | 株式会社神戸製鋼所 | アーク蒸発源 |
KR102335906B1 (ko) * | 2016-04-22 | 2021-12-09 | 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 | HiPIMS에 의해 성장 결함이 감소된 TiCN |
CH715878A1 (de) * | 2019-02-26 | 2020-08-31 | Oerlikon Surface Solutions Ag Pfaeffikon | Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen. |
KR102667048B1 (ko) | 2021-07-20 | 2024-05-22 | 한국생산기술연구원 | 중앙부 함몰형 자기장을 가지는 아크 증발원 및 이를 포함하는 아크 이온 플레이팅 장치, 그리고 이를 이용한 금속 및 금속화합물의 증착방법 |
DE102022118927A1 (de) | 2022-07-28 | 2024-02-08 | Rainer Cremer | Verfahren zum Verdampfen einer Kathode in einem Vakuumlichtbogenverdampfer |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3836451A (en) * | 1968-12-26 | 1974-09-17 | A Snaper | Arc deposition apparatus |
US4309266A (en) * | 1980-07-18 | 1982-01-05 | Murata Manufacturing Co., Ltd. | Magnetron sputtering apparatus |
DE3175623D1 (en) | 1980-08-11 | 1987-01-08 | Siemens Ag | Fingerprint sensor delivering an electric signal corresponding to the topographic relief of a finger to be examined |
US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
JPS5994357U (ja) * | 1982-12-14 | 1984-06-27 | 三島製紙株式会社 | 情報記録紙の複写性低下を防止するシ−ト |
DE4017111C2 (de) * | 1990-05-28 | 1998-01-29 | Hauzer Holding | Lichtbogen-Magnetron-Vorrichtung |
US5298136A (en) * | 1987-08-18 | 1994-03-29 | Regents Of The University Of Minnesota | Steered arc coating with thick targets |
JP2912864B2 (ja) * | 1995-11-28 | 1999-06-28 | アプライド マテリアルズ インコーポレイテッド | スパッタリング装置のマグネトロンユニット |
DE19702928C2 (de) * | 1997-01-28 | 2001-06-07 | Eitec Ges Fuer Metallisches Ha | Lichtbogenverdampfer |
GB9722649D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | Cathode ARC source for metallic and dielectric coatings |
DE10010448C1 (de) * | 2000-03-03 | 2002-04-25 | Multi Media Machinery Gmbh | Kathode |
DE10127013A1 (de) * | 2001-06-05 | 2002-12-12 | Gabriel Herbert M | Lichtbogen-Verdampfungsvorrichtung |
DE10127012A1 (de) | 2001-06-05 | 2002-12-12 | Gabriel Herbert M | Lichtbogen-Verdampfungsvorrichtung |
CN100573802C (zh) * | 2002-12-19 | 2009-12-23 | 尤纳克西斯巴尔策斯公司 | 具有磁场发生装置的真空电弧光源 |
RU2256724C1 (ru) * | 2003-12-10 | 2005-07-20 | Самарский государственный аэрокосмический университет им. акад. С.П. Королева | Способ нанесения композиционных покрытий в вакууме |
US8778144B2 (en) * | 2004-09-28 | 2014-07-15 | Oerlikon Advanced Technologies Ag | Method for manufacturing magnetron coated substrates and magnetron sputter source |
JP4548666B2 (ja) * | 2005-08-26 | 2010-09-22 | 株式会社不二越 | アーク式イオンプレーティング装置用蒸発源 |
US20090050059A1 (en) * | 2005-12-16 | 2009-02-26 | Josu Goikoetxea Larrinaga | Cathode evaporation machine |
GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
RU2448388C2 (ru) * | 2006-05-16 | 2012-04-20 | Эрликон Трейдинг Аг, Трюббах | Электродуговой источник и магнитное приспособление |
US7857948B2 (en) | 2006-07-19 | 2010-12-28 | Oerlikon Trading Ag, Trubbach | Method for manufacturing poorly conductive layers |
US10043642B2 (en) * | 2008-02-01 | 2018-08-07 | Oerlikon Surface Solutions Ag, Pfäffikon | Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement |
DE102009008161A1 (de) * | 2009-02-09 | 2010-08-12 | Oerlikon Trading Ag, Trübbach | Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen |
-
2009
- 2009-02-09 DE DE102009008161A patent/DE102009008161A1/de not_active Ceased
- 2009-12-30 RU RU2011137165/07A patent/RU2550502C2/ru active
- 2009-12-30 KR KR1020117017524A patent/KR20110135919A/ko active Application Filing
- 2009-12-30 US US13/148,384 patent/US11264216B2/en active Active
- 2009-12-30 ES ES09799555.9T patent/ES2652141T3/es active Active
- 2009-12-30 EP EP09799555.9A patent/EP2394288B1/de active Active
- 2009-12-30 MX MX2011008408A patent/MX2011008408A/es active IP Right Grant
- 2009-12-30 PT PT97995559T patent/PT2394288T/pt unknown
- 2009-12-30 SG SG2014008999A patent/SG2014008999A/en unknown
- 2009-12-30 CA CA2751811A patent/CA2751811C/en active Active
- 2009-12-30 WO PCT/EP2009/009319 patent/WO2010088947A1/de active Application Filing
- 2009-12-30 JP JP2011548538A patent/JP5608176B2/ja active Active
- 2009-12-30 BR BRPI0924299A patent/BRPI0924299A2/pt not_active Application Discontinuation
- 2009-12-30 KR KR1020167035660A patent/KR101784648B1/ko active IP Right Grant
- 2009-12-30 AU AU2009339328A patent/AU2009339328B2/en not_active Ceased
- 2009-12-30 HU HUE09799555A patent/HUE034774T2/en unknown
- 2009-12-30 SG SG2011055761A patent/SG173512A1/en unknown
- 2009-12-30 PL PL09799555T patent/PL2394288T3/pl unknown
- 2009-12-30 CN CN200980156427.8A patent/CN102308359B/zh active Active
-
2020
- 2020-02-05 US US16/782,499 patent/US11535928B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
RU2011137165A (ru) | 2013-03-20 |
US11264216B2 (en) | 2022-03-01 |
EP2394288B1 (de) | 2017-10-11 |
AU2009339328A1 (en) | 2011-08-25 |
EP2394288A1 (de) | 2011-12-14 |
WO2010088947A1 (de) | 2010-08-12 |
KR101784648B1 (ko) | 2017-11-06 |
CN102308359B (zh) | 2016-06-01 |
RU2550502C2 (ru) | 2015-05-10 |
PL2394288T3 (pl) | 2018-03-30 |
CA2751811C (en) | 2017-08-22 |
PT2394288T (pt) | 2018-01-03 |
BRPI0924299A2 (pt) | 2016-01-26 |
US11535928B2 (en) | 2022-12-27 |
DE102009008161A1 (de) | 2010-08-12 |
US20200176220A1 (en) | 2020-06-04 |
MX2011008408A (es) | 2011-09-22 |
AU2009339328B2 (en) | 2014-05-08 |
CA2751811A1 (en) | 2010-08-12 |
JP5608176B2 (ja) | 2014-10-15 |
SG173512A1 (en) | 2011-09-29 |
SG2014008999A (en) | 2014-04-28 |
HUE034774T2 (en) | 2018-02-28 |
US20110308941A1 (en) | 2011-12-22 |
JP2012517522A (ja) | 2012-08-02 |
KR20110135919A (ko) | 2011-12-20 |
CN102308359A (zh) | 2012-01-04 |
KR20160150641A (ko) | 2016-12-30 |
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