ES2652141T3 - Configuración magnética modificable para fuentes de evaporación por arco - Google Patents

Configuración magnética modificable para fuentes de evaporación por arco Download PDF

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Publication number
ES2652141T3
ES2652141T3 ES09799555.9T ES09799555T ES2652141T3 ES 2652141 T3 ES2652141 T3 ES 2652141T3 ES 09799555 T ES09799555 T ES 09799555T ES 2652141 T3 ES2652141 T3 ES 2652141T3
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ES
Spain
Prior art keywords
permanent magnets
target
marginal
annular coil
coating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES09799555.9T
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English (en)
Inventor
Siegfried Krassnitzer
Juerg Hagmann
Oliver Gstoehl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oerlikon Surface Solutions AG Pfaeffikon
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Oerlikon Surface Solutions AG Pfaeffikon
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Filing date
Publication date
Application filed by Oerlikon Surface Solutions AG Pfaeffikon filed Critical Oerlikon Surface Solutions AG Pfaeffikon
Application granted granted Critical
Publication of ES2652141T3 publication Critical patent/ES2652141T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325Electric arc evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055Arc discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32669Particular magnets or magnet arrangements for controlling the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458Electromagnets in particular for cathodic sputtering apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338Changing chemical properties of treated surfaces
    • H01J2237/3387Nitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Treatment Devices (AREA)

Abstract

Fuente de evaporación por arco con una disposición de campo magnético prevista en un blanco (2) a partir de un material de revestimiento para la generación de campos magnéticos en y por encima de la superficie de blanco, comprendiendo la disposición de campo magnético imanes permanentes centrales (5a), imanes permanentes marginales (5) y al menos una bobina anular (4) dispuesta detrás del blanco, cuyo diámetro interior limitado por los devanados es preferentemente menor o igual, en todo caso no considerablemente mayor que el diámetro del blanco, caracterizada por que los imanes permanentes marginales (5) y los imanes permanentes centrales (5a) pueden desplazarse esencialmente en perpendicular a la superficie del blanco (2) de manera que se alejan del blanco (2) y la proyección de los imanes permanentes marginales (5) hacia la superficie de blanco en comparación con la proyección de la bobina anular (4) hacia la superficie de blanco está alejada adicionalmente del centro de la superficie de blanco, pudiendo realizarse la capacidad de desplazamiento de los imanes permanentes marginales (5) y de los imanes permanentes centrales independientemente de la bobina anular (4), y estando configurada la disposición magnética de tal modo que en un primer ajuste de la disposición de campo magnético, los imanes permanentes centrales (5a) y los imanes permanentes marginales (5) pueden adoptar una primera posición en la que los polos de los imanes permanentes (5, 5a) están lo más próximos al material de revestimiento, y encontrándose los polos de los imanes permanentes (5, 5a) esencialmente en un plano en el que también se encuentra un extremo de la bobina anular (4), el cual está lo más próximo al material de revestimiento.

Description

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Claims (1)

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ES09799555.9T 2009-02-09 2009-12-30 Configuración magnética modificable para fuentes de evaporación por arco Active ES2652141T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009008161 2009-02-09
DE102009008161A DE102009008161A1 (de) 2009-02-09 2009-02-09 Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen
PCT/EP2009/009319 WO2010088947A1 (de) 2009-02-09 2009-12-30 Modifizierbare magnetkonfiguration für arc-verdampungsquellen

Publications (1)

Publication Number Publication Date
ES2652141T3 true ES2652141T3 (es) 2018-01-31

Family

ID=41647035

Family Applications (1)

Application Number Title Priority Date Filing Date
ES09799555.9T Active ES2652141T3 (es) 2009-02-09 2009-12-30 Configuración magnética modificable para fuentes de evaporación por arco

Country Status (17)

Country Link
US (2) US11264216B2 (es)
EP (1) EP2394288B1 (es)
JP (1) JP5608176B2 (es)
KR (2) KR20110135919A (es)
CN (1) CN102308359B (es)
AU (1) AU2009339328B2 (es)
BR (1) BRPI0924299A2 (es)
CA (1) CA2751811C (es)
DE (1) DE102009008161A1 (es)
ES (1) ES2652141T3 (es)
HU (1) HUE034774T2 (es)
MX (1) MX2011008408A (es)
PL (1) PL2394288T3 (es)
PT (1) PT2394288T (es)
RU (1) RU2550502C2 (es)
SG (2) SG2014008999A (es)
WO (1) WO2010088947A1 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009008161A1 (de) * 2009-02-09 2010-08-12 Oerlikon Trading Ag, Trübbach Modifizierbare Magnetkonfiguration für Arc-Verdampfungsquellen
JP5035479B2 (ja) * 2011-01-27 2012-09-26 三菱マテリアル株式会社 耐欠損性、耐摩耗性にすぐれた表面被覆切削工具
MX347702B (es) * 2011-06-30 2017-05-09 Oerlikon Surface Solutions Ag Pfäffikon Recubrimiento de nanocapas para herramientas de alto rendimiento.
US9953808B2 (en) 2013-04-30 2018-04-24 Nippon Itf, Inc. Arc evaporation source
CN103556122B (zh) * 2013-10-23 2017-01-18 苏州矩阵光电有限公司 一种自适应磁场调整型磁控溅射镀膜设备及其镀膜方法
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
KR102335906B1 (ko) * 2016-04-22 2021-12-09 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 HiPIMS에 의해 성장 결함이 감소된 TiCN
CH715878A1 (de) * 2019-02-26 2020-08-31 Oerlikon Surface Solutions Ag Pfaeffikon Magnetanordnung für eine Plasmaquelle zur Durchführung von Plasmabehandlungen.
KR102667048B1 (ko) 2021-07-20 2024-05-22 한국생산기술연구원 중앙부 함몰형 자기장을 가지는 아크 증발원 및 이를 포함하는 아크 이온 플레이팅 장치, 그리고 이를 이용한 금속 및 금속화합물의 증착방법
DE102022118927A1 (de) 2022-07-28 2024-02-08 Rainer Cremer Verfahren zum Verdampfen einer Kathode in einem Vakuumlichtbogenverdampfer

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US3836451A (en) * 1968-12-26 1974-09-17 A Snaper Arc deposition apparatus
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
DE3175623D1 (en) 1980-08-11 1987-01-08 Siemens Ag Fingerprint sensor delivering an electric signal corresponding to the topographic relief of a finger to be examined
US4401539A (en) * 1981-01-30 1983-08-30 Hitachi, Ltd. Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure
JPS5994357U (ja) * 1982-12-14 1984-06-27 三島製紙株式会社 情報記録紙の複写性低下を防止するシ−ト
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
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DE19702928C2 (de) * 1997-01-28 2001-06-07 Eitec Ges Fuer Metallisches Ha Lichtbogenverdampfer
GB9722649D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
DE10010448C1 (de) * 2000-03-03 2002-04-25 Multi Media Machinery Gmbh Kathode
DE10127013A1 (de) * 2001-06-05 2002-12-12 Gabriel Herbert M Lichtbogen-Verdampfungsvorrichtung
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CN100573802C (zh) * 2002-12-19 2009-12-23 尤纳克西斯巴尔策斯公司 具有磁场发生装置的真空电弧光源
RU2256724C1 (ru) * 2003-12-10 2005-07-20 Самарский государственный аэрокосмический университет им. акад. С.П. Королева Способ нанесения композиционных покрытий в вакууме
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JP4548666B2 (ja) * 2005-08-26 2010-09-22 株式会社不二越 アーク式イオンプレーティング装置用蒸発源
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Also Published As

Publication number Publication date
RU2011137165A (ru) 2013-03-20
US11264216B2 (en) 2022-03-01
EP2394288B1 (de) 2017-10-11
AU2009339328A1 (en) 2011-08-25
EP2394288A1 (de) 2011-12-14
WO2010088947A1 (de) 2010-08-12
KR101784648B1 (ko) 2017-11-06
CN102308359B (zh) 2016-06-01
RU2550502C2 (ru) 2015-05-10
PL2394288T3 (pl) 2018-03-30
CA2751811C (en) 2017-08-22
PT2394288T (pt) 2018-01-03
BRPI0924299A2 (pt) 2016-01-26
US11535928B2 (en) 2022-12-27
DE102009008161A1 (de) 2010-08-12
US20200176220A1 (en) 2020-06-04
MX2011008408A (es) 2011-09-22
AU2009339328B2 (en) 2014-05-08
CA2751811A1 (en) 2010-08-12
JP5608176B2 (ja) 2014-10-15
SG173512A1 (en) 2011-09-29
SG2014008999A (en) 2014-04-28
HUE034774T2 (en) 2018-02-28
US20110308941A1 (en) 2011-12-22
JP2012517522A (ja) 2012-08-02
KR20110135919A (ko) 2011-12-20
CN102308359A (zh) 2012-01-04
KR20160150641A (ko) 2016-12-30

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