WO2009025258A1 - スパッタリング方法及びスパッタリング装置 - Google Patents

スパッタリング方法及びスパッタリング装置 Download PDF

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Publication number
WO2009025258A1
WO2009025258A1 PCT/JP2008/064710 JP2008064710W WO2009025258A1 WO 2009025258 A1 WO2009025258 A1 WO 2009025258A1 JP 2008064710 W JP2008064710 W JP 2008064710W WO 2009025258 A1 WO2009025258 A1 WO 2009025258A1
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WO
WIPO (PCT)
Prior art keywords
target
sputtering
processing substrate
targets
caused
Prior art date
Application number
PCT/JP2008/064710
Other languages
English (en)
French (fr)
Inventor
Tatsunori Isobe
Takashi Komatsu
Shigemitsu Satou
Hiroki Oozora
Hideo Taniguchi
Masao Kawaguchi
Original Assignee
Ulvac, Inc.
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc., Sharp Kabushiki Kaisha filed Critical Ulvac, Inc.
Priority to CN200880103599A priority Critical patent/CN101784693A/zh
Priority to JP2009529027A priority patent/JP5322234B2/ja
Priority to US12/673,256 priority patent/US20110180394A1/en
Publication of WO2009025258A1 publication Critical patent/WO2009025258A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2453—Coating containing SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C03C2217/231—In2O3/SnO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

処理基板のチャージアップに起因した異常放電の発生を抑制して、大面積の処理基板に対して良好に透明電導膜を形成できるスパッタリング方法を提供する。スパッタ室１２内で処理基板Ｓに対向させかつ所定の間隔を置いて並設した複数枚のターゲット４１ａ乃至４１ｈのうち、それぞれ対をなすターゲットに所定の周波数で交互に極性をかえて電力投入し、各ターゲットをアノード電極、カソード電極に交互に切替え、アノード電極及びカソード電極間にグロー放電を生じさせてプラズマ雰囲気を形成して各ターゲットをスパッタリングする。スパッタリング中、各ターゲットへの電力投入を間欠停止する。　 　 　
PCT/JP2008/064710 2007-08-20 2008-08-18 スパッタリング方法及びスパッタリング装置 WO2009025258A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880103599A CN101784693A (zh) 2007-08-20 2008-08-18 溅射方法及溅射装置
JP2009529027A JP5322234B2 (ja) 2007-08-20 2008-08-18 スパッタリング方法及びスパッタリング装置
US12/673,256 US20110180394A1 (en) 2007-08-20 2008-08-18 Sputtering method and sputtering apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007213973 2007-08-20
JP2007-213973 2007-08-20

Publications (1)

Publication Number Publication Date
WO2009025258A1 true WO2009025258A1 (ja) 2009-02-26

Family

ID=40378160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064710 WO2009025258A1 (ja) 2007-08-20 2008-08-18 スパッタリング方法及びスパッタリング装置

Country Status (6)

Country Link
US (1) US20110180394A1 (ja)
JP (1) JP5322234B2 (ja)
KR (1) KR20100044230A (ja)
CN (1) CN101784693A (ja)
TW (1) TW200925309A (ja)
WO (1) WO2009025258A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160008660A (ko) 2011-04-26 2016-01-22 가부시키가이샤 아루박 캐소드 유닛
JP2017133065A (ja) * 2016-01-27 2017-08-03 株式会社アルバック 成膜方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120021642A (ko) * 2010-08-11 2012-03-09 주식회사 에스에프에이 스퍼터 장치
WO2012095961A1 (ja) * 2011-01-12 2012-07-19 日新電機株式会社 プラズマ装置
CN103014639B (zh) * 2012-12-12 2015-02-25 京东方科技集团股份有限公司 溅射靶材及溅射装置
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
KR102651759B1 (ko) * 2016-10-11 2024-03-29 삼성디스플레이 주식회사 증착장치
CN108097530B (zh) * 2018-01-19 2023-12-29 广西晶联光电材料有限责任公司 一种平面靶材背面金属化设备及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01301856A (ja) * 1988-05-30 1989-12-06 Shimadzu Corp スパッタリング装置
JPH09217171A (ja) * 1996-02-15 1997-08-19 Anelva Corp Ｉｔｏ透明導電膜の作製方法
JP2003323709A (ja) * 2002-05-01 2003-11-14 Fuji Electric Co Ltd 垂直磁気記録媒体及びその製造方法
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG46607A1 (en) * 1993-07-28 1998-02-20 Asahi Glass Co Ltd Method of an apparatus for sputtering
DE19702187C2 (de) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
JP2000238178A (ja) * 1999-02-24 2000-09-05 Teijin Ltd 透明導電積層体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01301856A (ja) * 1988-05-30 1989-12-06 Shimadzu Corp スパッタリング装置
JPH09217171A (ja) * 1996-02-15 1997-08-19 Anelva Corp Ｉｔｏ透明導電膜の作製方法
JP2003323709A (ja) * 2002-05-01 2003-11-14 Fuji Electric Co Ltd 垂直磁気記録媒体及びその製造方法
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160008660A (ko) 2011-04-26 2016-01-22 가부시키가이샤 아루박 캐소드 유닛
JP2017133065A (ja) * 2016-01-27 2017-08-03 株式会社アルバック 成膜方法

Also Published As

Publication number Publication date
JPWO2009025258A1 (ja) 2010-11-25
KR20100044230A (ko) 2010-04-29
JP5322234B2 (ja) 2013-10-23
CN101784693A (zh) 2010-07-21
US20110180394A1 (en) 2011-07-28
TW200925309A (en) 2009-06-16

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