DE112008001930T5 - Sputtergerät - Google Patents
Sputtergerät Download PDFInfo
- Publication number
- DE112008001930T5 DE112008001930T5 DE112008001930T DE112008001930T DE112008001930T5 DE 112008001930 T5 DE112008001930 T5 DE 112008001930T5 DE 112008001930 T DE112008001930 T DE 112008001930T DE 112008001930 T DE112008001930 T DE 112008001930T DE 112008001930 T5 DE112008001930 T5 DE 112008001930T5
- Authority
- DE
- Germany
- Prior art keywords
- sputtering
- cylindrical
- magnetic field
- target
- field generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 172
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000001704 evaporation Methods 0.000 claims abstract description 66
- 230000008020 evaporation Effects 0.000 claims abstract description 65
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 abstract description 37
- 230000001376 precipitating effect Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 33
- 210000002381 plasma Anatomy 0.000 description 31
- 230000002093 peripheral effect Effects 0.000 description 19
- 125000006850 spacer group Chemical group 0.000 description 11
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 230000003628 erosive effect Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-189471 | 2007-07-20 | ||
| JP2007189471A JP2009024230A (ja) | 2007-07-20 | 2007-07-20 | スパッタリング装置 |
| PCT/JP2008/059880 WO2009013935A1 (ja) | 2007-07-20 | 2008-05-29 | スパッタリング装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112008001930T5 true DE112008001930T5 (de) | 2010-07-08 |
Family
ID=40281195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112008001930T Ceased DE112008001930T5 (de) | 2007-07-20 | 2008-05-29 | Sputtergerät |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100181191A1 (https=) |
| JP (1) | JP2009024230A (https=) |
| KR (1) | KR101175843B1 (https=) |
| CN (1) | CN101755071B (https=) |
| DE (1) | DE112008001930T5 (https=) |
| WO (1) | WO2009013935A1 (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5240782B2 (ja) * | 2009-05-18 | 2013-07-17 | 株式会社神戸製鋼所 | 連続成膜装置 |
| JP5527894B2 (ja) * | 2010-09-01 | 2014-06-25 | 株式会社アルバック | スパッタ装置 |
| KR101273771B1 (ko) * | 2010-11-09 | 2013-06-12 | 경희대학교 산학협력단 | 롤투롤 스퍼터링 시스템 |
| KR20150103383A (ko) * | 2011-02-23 | 2015-09-10 | 가부시키가이샤 고베 세이코쇼 | 아크식 증발원 |
| CN103160792B (zh) * | 2011-12-12 | 2017-02-08 | 许聪波 | 镀膜装置 |
| WO2013135265A1 (en) * | 2012-03-12 | 2013-09-19 | Applied Materials, Inc. | Mini rotatable sputter devices for sputter deposition |
| KR20150023472A (ko) * | 2012-05-29 | 2015-03-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 코팅 방법 및 코팅기 |
| KR101494223B1 (ko) | 2013-01-31 | 2015-02-17 | (주)에스엔텍 | 원통형 플라즈마 캐소드 장치 |
| KR102150455B1 (ko) * | 2013-04-23 | 2020-09-01 | 주식회사 선익시스템 | 스퍼터링 장치 및 이를 포함하는 증착장치 |
| KR102150456B1 (ko) * | 2013-04-30 | 2020-09-01 | 주식회사 선익시스템 | 스퍼터링 장치 및 방법 |
| CN103409725A (zh) * | 2013-05-22 | 2013-11-27 | 东莞宏威数码机械有限公司 | 旋转异形靶阴极机构及磁控溅射镀膜装置 |
| PL2811507T3 (pl) * | 2013-06-07 | 2020-09-07 | Soleras Advanced Coatings Bvba | Konfiguracja magnesów dla systemu magnetronowego do napylania jonowego |
| EP2811509A1 (en) * | 2013-06-07 | 2014-12-10 | Soleras Advanced Coatings bvba | Electronic configuration for magnetron sputter deposition systems |
| JP6309353B2 (ja) * | 2014-06-06 | 2018-04-11 | 株式会社Ｓｃｒｅｅｎホールディングス | スパッタリング装置およびスパッタリング方法 |
| US9928997B2 (en) | 2014-12-14 | 2018-03-27 | Applied Materials, Inc. | Apparatus for PVD dielectric deposition |
| JP6209286B2 (ja) * | 2015-03-20 | 2017-10-04 | 芝浦メカトロニクス株式会社 | 成膜装置及び成膜ワーク製造方法 |
| KR101716848B1 (ko) * | 2015-09-18 | 2017-03-15 | 이만호 | 공간형 이온 빔 발생 장치 |
| JP2018532890A (ja) * | 2015-10-25 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板上での真空堆積のための装置及び真空堆積中に基板をマスキングするための方法 |
| DE102016101717A1 (de) * | 2016-02-01 | 2017-08-03 | Von Ardenne Gmbh | Sputteranordnung |
| KR20200036065A (ko) | 2016-03-30 | 2020-04-06 | 케이힌 람테크 가부시키가이샤 | 스퍼터링 캐소드, 스퍼터링 장치 및 성막체의 제조 방법 |
| EP3452634B1 (en) * | 2016-05-02 | 2023-09-06 | Applied Materials, Inc. | Magnetron sputtering method |
| CN106906447A (zh) * | 2016-12-27 | 2017-06-30 | 王开安 | 磁控溅射镀膜源及其装置与方法 |
| CN108456867A (zh) * | 2018-06-22 | 2018-08-28 | 广东腾胜真空技术工程有限公司 | 配置辅助阳极的低温沉积设备 |
| DE102018213534A1 (de) * | 2018-08-10 | 2020-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung |
| JP7530724B2 (ja) * | 2019-03-26 | 2024-08-08 | 日東電工株式会社 | マグネトロンプラズマ成膜装置 |
| JP2022544641A (ja) * | 2019-06-24 | 2022-10-20 | アプライド マテリアルズ インコーポレイテッド | 基板上に材料を堆積する方法 |
| WO2022194377A1 (en) * | 2021-03-18 | 2022-09-22 | Applied Materials, Inc. | Method of depositing material on a substrate |
| CN113403595A (zh) * | 2021-06-01 | 2021-09-17 | 无锡爱尔华光电科技有限公司 | 一种旋转镜像靶磁控溅射设备 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0368113A (ja) | 1989-08-07 | 1991-03-25 | Mitsubishi Electric Corp | 油入電気機器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| JPH03104864A (ja) * | 1989-09-18 | 1991-05-01 | Hitachi Ltd | スパッタリングカソード |
| EP0822996B1 (en) * | 1995-04-25 | 2003-07-02 | VON ARDENNE ANLAGENTECHNIK GmbH | Sputtering system using cylindrical rotating magnetron electrically powered using alternating current |
| US6488824B1 (en) * | 1998-11-06 | 2002-12-03 | Raycom Technologies, Inc. | Sputtering apparatus and process for high rate coatings |
| JP2001200357A (ja) * | 2000-01-19 | 2001-07-24 | Nippon Sheet Glass Co Ltd | 成膜装置と成膜方法 |
| DE10213049A1 (de) * | 2002-03-22 | 2003-10-02 | Dieter Wurczinger | Drehbare Rohrkatode |
| WO2004005574A2 (en) * | 2002-07-02 | 2004-01-15 | Academy Precision Materials A Division Of Academy Corporation | Rotary target and method for onsite mechanical assembly of rotary target |
| DE502005000983D1 (de) * | 2005-05-13 | 2007-08-16 | Applied Materials Gmbh & Co Kg | Verfahren zum Betreiben einer Sputterkathode mit einem Target |
| JP4922581B2 (ja) * | 2005-07-29 | 2012-04-25 | 株式会社アルバック | スパッタリング装置及びスパッタリング方法 |
-
2007
- 2007-07-20 JP JP2007189471A patent/JP2009024230A/ja active Pending
-
2008
- 2008-05-29 DE DE112008001930T patent/DE112008001930T5/de not_active Ceased
- 2008-05-29 US US12/668,914 patent/US20100181191A1/en not_active Abandoned
- 2008-05-29 KR KR1020107001058A patent/KR101175843B1/ko not_active Expired - Fee Related
- 2008-05-29 CN CN200880025385XA patent/CN101755071B/zh not_active Expired - Fee Related
- 2008-05-29 WO PCT/JP2008/059880 patent/WO2009013935A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0368113A (ja) | 1989-08-07 | 1991-03-25 | Mitsubishi Electric Corp | 油入電気機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100181191A1 (en) | 2010-07-22 |
| JP2009024230A (ja) | 2009-02-05 |
| CN101755071A (zh) | 2010-06-23 |
| WO2009013935A1 (ja) | 2009-01-29 |
| CN101755071B (zh) | 2012-03-21 |
| KR20100027222A (ko) | 2010-03-10 |
| KR101175843B1 (ko) | 2012-08-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R016 | Response to examination communication | ||
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |