KR101171504B1 - 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 - Google Patents

다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 Download PDF

Info

Publication number
KR101171504B1
KR101171504B1 KR1020100048480A KR20100048480A KR101171504B1 KR 101171504 B1 KR101171504 B1 KR 101171504B1 KR 1020100048480 A KR1020100048480 A KR 1020100048480A KR 20100048480 A KR20100048480 A KR 20100048480A KR 101171504 B1 KR101171504 B1 KR 101171504B1
Authority
KR
South Korea
Prior art keywords
semi
transmissive portion
film
transmissive
exposure light
Prior art date
Application number
KR1020100048480A
Other languages
English (en)
Korean (ko)
Other versions
KR20100127718A (ko
Inventor
노보루 야마구찌
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100127718A publication Critical patent/KR20100127718A/ko
Application granted granted Critical
Publication of KR101171504B1 publication Critical patent/KR101171504B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020100048480A 2009-05-26 2010-05-25 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 KR101171504B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-127039 2009-05-26
JP2009127039A JP2010276724A (ja) 2009-05-26 2009-05-26 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法

Publications (2)

Publication Number Publication Date
KR20100127718A KR20100127718A (ko) 2010-12-06
KR101171504B1 true KR101171504B1 (ko) 2012-08-06

Family

ID=43226579

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100048480A KR101171504B1 (ko) 2009-05-26 2010-05-25 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP2010276724A (ja)
KR (1) KR101171504B1 (ja)
CN (1) CN101900932B (ja)
TW (1) TWI461837B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102426411A (zh) * 2011-07-01 2012-04-25 上海华力微电子有限公司 一种保护掩模板的方法
CN108267927B (zh) * 2011-12-21 2021-08-24 大日本印刷株式会社 大型相移掩膜
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
JP5635577B2 (ja) * 2012-09-26 2014-12-03 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) * 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
KR102170761B1 (ko) 2013-07-22 2020-10-27 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
KR20210016814A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 3-톤 이상의 마스크 제조 방법
CN113249699B (zh) * 2021-05-13 2022-11-04 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002365784A (ja) 2001-06-05 2002-12-18 Sony Corp 多階調マスク、レジストパターンの形成方法、及び光学素子の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3080023B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光用フォトマスク
US5935736A (en) * 1997-10-24 1999-08-10 Taiwan Semiconductors Manufacturing Company Ltd. Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
TW363147B (en) * 1997-11-22 1999-07-01 United Microelectronics Corp Phase shifting mask
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
EP1668413A2 (en) * 2003-09-05 2006-06-14 Schott AG Phase shift mask blank with increased uniformity
JP4446395B2 (ja) * 2006-02-02 2010-04-07 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、及びグレートーンマスク
JP4570632B2 (ja) * 2006-02-20 2010-10-27 Ｈｏｙａ株式会社 ４階調フォトマスクの製造方法、及びフォトマスクブランク加工品
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
TWI422962B (zh) * 2006-12-05 2014-01-11 Hoya Corp 灰階光罩之檢查方法、液晶裝置製造用灰階光罩之製造方法以及圖案轉印方法
JP5036328B2 (ja) * 2007-01-24 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスク及びパターン転写方法
JP5036349B2 (ja) * 2007-02-28 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法
JP5057866B2 (ja) * 2007-07-03 2012-10-24 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
KR20090009618A (ko) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 3톤 노광 마스크
KR20090044513A (ko) * 2007-10-31 2009-05-07 주식회사 에스앤에스텍 그레이톤 블랭크 마스크 및 그레이톤 포토마스크의제조방법
JP5319193B2 (ja) * 2008-07-28 2013-10-16 Ｈｏｙａ株式会社 液晶表示装置製造用多階調フォトマスク、液晶表示装置製造用多階調フォトマスクの製造方法及びパターン転写方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002365784A (ja) 2001-06-05 2002-12-18 Sony Corp 多階調マスク、レジストパターンの形成方法、及び光学素子の製造方法

Also Published As

Publication number Publication date
CN101900932A (zh) 2010-12-01
TWI461837B (zh) 2014-11-21
TW201104353A (en) 2011-02-01
KR20100127718A (ko) 2010-12-06
JP2010276724A (ja) 2010-12-09
CN101900932B (zh) 2012-06-06

Similar Documents

Publication Publication Date Title
KR101171504B1 (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
KR100609678B1 (ko) 그레이톤 마스크 및 그 제조방법
JP4729606B2 (ja) グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
TWI432885B (zh) 四階光罩製造方法及使用此種方法中之光罩坯料板
JP4961990B2 (ja) マスクブランクおよび階調マスク
JP2011215614A (ja) 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
JP2005037933A (ja) グレートーンマスクの製造方法及びグレートーンマスク
KR20070012250A (ko) 포토마스크 블랭크, 포토마스크 및 이의 제조방법
JP5662032B2 (ja) マスクブランクス及びハーフトーンマスク
JP2013167907A (ja) ハーフトーンマスク及びその製造方法
KR101333899B1 (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 박막 트랜지스터의 제조 방법
JP2011215226A (ja) 多階調フォトマスク、多階調フォトマスクの製造方法、多階調フォトマスク用ブランク及びパターン転写方法
JP4005622B1 (ja) フォトマスク用基板及びフォトマスク並びにその製造方法
JP2006030319A (ja) グレートーンマスク及びグレートーンマスクの製造方法
JP2008052120A (ja) マスクブランク及びフォトマスク並びにこれらの製造方法
JP5336226B2 (ja) 多階調フォトマスクの製造方法
JP5076473B2 (ja) マスクブランクおよび階調マスク
TW201019045A (en) Multi-tone photomask, pattern transfer method and method of producing a display device using the multi-tone photomask
KR20110010071A (ko) 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
JP4615032B2 (ja) 多階調フォトマスクの製造方法及びパターン転写方法
JP4816197B2 (ja) 階調マスクおよびその製造方法
KR101182082B1 (ko) 다계조 포토마스크의 제조 방법, 및 다계조 포토마스크
JP2014115675A (ja) 表示装置製造用多階調フォトマスク、表示装置製造用多階調フォトマスクの製造方法、及び表示装置の製造方法
KR20080070523A (ko) 그레이 톤 마스크 및 이의 제조 방법
JP5365172B2 (ja) 階調マスクおよび階調マスクの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150630

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160701

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20190627

Year of fee payment: 8