KR101155943B1 - Ｍｏｓ 캐패시터 및 반도체 장치 - Google Patents

Ｍｏｓ 캐패시터 및 반도체 장치 Download PDF

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KR101155943B1
KR101155943B1 KR1020067025011A KR20067025011A KR101155943B1 KR 101155943 B1 KR101155943 B1 KR 101155943B1 KR 1020067025011 A KR1020067025011 A KR 1020067025011A KR 20067025011 A KR20067025011 A KR 20067025011A KR 101155943 B1 KR101155943 B1 KR 101155943B1
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film
insulating film
impurity
semiconductor
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KR20070012519A (ko
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키요시 카토
유타카 시오노이리
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020067025011A 2004-04-28 2005-04-21 Ｍｏｓ 캐패시터 및 반도체 장치 Expired - Fee Related KR101155943B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004132813 2004-04-28
JPJP-P-2004-00132813 2004-04-28
PCT/JP2005/008087 WO2005106961A1 (en) 2004-04-28 2005-04-21 Mos capacitor and semiconductor device

Publications (2)

Publication Number Publication Date
KR20070012519A KR20070012519A (ko) 2007-01-25
KR101155943B1 true KR101155943B1 (ko) 2012-06-18

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KR1020067025011A Expired - Fee Related KR101155943B1 (ko) 2004-04-28 2005-04-21 Ｍｏｓ 캐패시터 및 반도체 장치

Country Status (4)

Country Link
US (1) US7825447B2 (https=)
JP (1) JP4939769B2 (https=)
KR (1) KR101155943B1 (https=)
WO (1) WO2005106961A1 (https=)

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JP4438685B2 (ja) * 2005-05-23 2010-03-24 セイコーエプソン株式会社 透明導電膜とその形成方法、電気光学装置、及び電子機器
TWI300672B (en) * 2006-01-27 2008-09-01 Au Optronics Corp System integrated organic light-emitting display
JP5222479B2 (ja) * 2006-03-03 2013-06-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE102006013077A1 (de) * 2006-03-22 2007-09-27 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement mit Sekundärpassivierungsschicht und zugehöriges Herstellungsverfahren
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2008134695A (ja) * 2006-11-27 2008-06-12 Philtech Inc 基体データ管理システム
JP2008134694A (ja) * 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの付加方法およびｒｆパウダー付加基体シート
JP2008135446A (ja) * 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの製造方法
JP2008134816A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダーの励起方法
JP2008135951A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダー含有基体
JP2008134815A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダーの提供方法およびｒｆパウダー含有液
JP2008136019A (ja) * 2006-11-29 2008-06-12 Philtech Inc 磁界結合装置および読取り装置
WO2008081699A1 (ja) * 2006-12-28 2008-07-10 Philtech Inc. 基体シート
KR100915765B1 (ko) * 2007-12-26 2009-09-04 주식회사 동부하이텍 반도체 소자의 테스트 패턴 및 그 제조 방법
WO2010032599A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8227846B2 (en) * 2010-02-12 2012-07-24 Advanced Micro Devices, Inc. Systems and methods for a continuous-well decoupling capacitor
DE102011080620B4 (de) * 2011-08-08 2014-06-05 Siemens Aktiengesellschaft Verfahren für die Beschichtung eines Isolationsbauteils und Isolationsbauteil sowie elektrisch leitfähiges Heizkabel
CN102280497A (zh) * 2011-09-01 2011-12-14 上海宏力半导体制造有限公司 累积型场效应管可变电容及其制造工艺
JP5904735B2 (ja) * 2011-09-20 2016-04-20 株式会社東芝 磁界共鳴方式回路
KR20140010815A (ko) 2012-07-17 2014-01-27 에스케이하이닉스 주식회사 Ｍｏｓ 커패시터, 그 형성 방법 및 그를 이용한 반도체 장치
TWI550885B (zh) * 2012-10-31 2016-09-21 天鈺科技股份有限公司 半導體電容及具有該半導體電容的半導體裝置
US9269315B2 (en) * 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US9130478B2 (en) * 2013-03-08 2015-09-08 Infineon Technologies Ag Rectifier with bridge circuit and parallel resonant circuit
CN104123961B (zh) * 2014-07-21 2017-06-16 中国人民解放军国防科学技术大学 一种具有改进型n阱电容的单栅非易失存储单元
WO2020245692A1 (ja) * 2019-06-07 2020-12-10 株式会社半導体エネルギー研究所 半導体装置

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JPH08213627A (ja) * 1995-02-01 1996-08-20 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置

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JP2005340791A (ja) 2005-12-08
WO2005106961A1 (en) 2005-11-10
US20070210364A1 (en) 2007-09-13
KR20070012519A (ko) 2007-01-25
US7825447B2 (en) 2010-11-02
JP4939769B2 (ja) 2012-05-30

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