KR101133349B1 - 실리콘 함유 재료 증착 방법, 컴퓨터 판독 가능 매체, 실리콘 함유막 증착용 프로세싱 도구, 및 기판 프로세싱용 시스템 - Google Patents

실리콘 함유 재료 증착 방법, 컴퓨터 판독 가능 매체, 실리콘 함유막 증착용 프로세싱 도구, 및 기판 프로세싱용 시스템 Download PDF

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KR101133349B1
KR101133349B1 KR1020077012481A KR20077012481A KR101133349B1 KR 101133349 B1 KR101133349 B1 KR 101133349B1 KR 1020077012481 A KR1020077012481 A KR 1020077012481A KR 20077012481 A KR20077012481 A KR 20077012481A KR 101133349 B1 KR101133349 B1 KR 101133349B1
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silicon
process gas
microfeatures
exposing
containing process
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KR20070092958A (ko
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앨렌 레이스
앤소니 딥
성호 오
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
KR1020077012481A 2005-01-18 2005-11-30 실리콘 함유 재료 증착 방법, 컴퓨터 판독 가능 매체, 실리콘 함유막 증착용 프로세싱 도구, 및 기판 프로세싱용 시스템 Expired - Lifetime KR101133349B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/035,730 US7205187B2 (en) 2005-01-18 2005-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
US11/035,730 2005-01-18
PCT/US2005/043027 WO2006078354A2 (en) 2005-01-18 2005-11-30 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

Publications (2)

Publication Number Publication Date
KR20070092958A KR20070092958A (ko) 2007-09-14
KR101133349B1 true KR101133349B1 (ko) 2012-04-06

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KR1020077012481A Expired - Lifetime KR101133349B1 (ko) 2005-01-18 2005-11-30 실리콘 함유 재료 증착 방법, 컴퓨터 판독 가능 매체, 실리콘 함유막 증착용 프로세싱 도구, 및 기판 프로세싱용 시스템

Country Status (7)

Country Link
US (1) US7205187B2 (enExample)
EP (1) EP1842231A4 (enExample)
JP (1) JP5068178B2 (enExample)
KR (1) KR101133349B1 (enExample)
CN (1) CN101111931B (enExample)
TW (1) TWI306629B (enExample)
WO (1) WO2006078354A2 (enExample)

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US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
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US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
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TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
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US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
JP6055795B2 (ja) * 2014-06-26 2016-12-27 株式会社豊田中央研究所 半導体装置の製造方法
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
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US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
US9620356B1 (en) * 2015-10-29 2017-04-11 Applied Materials, Inc. Process of selective epitaxial growth for void free gap fill
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Also Published As

Publication number Publication date
CN101111931B (zh) 2010-05-12
WO2006078354A3 (en) 2006-12-07
EP1842231A2 (en) 2007-10-10
US7205187B2 (en) 2007-04-17
US20060160288A1 (en) 2006-07-20
WO2006078354A2 (en) 2006-07-27
JP5068178B2 (ja) 2012-11-07
CN101111931A (zh) 2008-01-23
TW200639940A (en) 2006-11-16
JP2008527738A (ja) 2008-07-24
KR20070092958A (ko) 2007-09-14
TWI306629B (en) 2009-02-21
EP1842231A4 (en) 2008-11-26

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