CN101111931B - 使用六氯乙硅烷或其它含氯硅前驱体的微构件填充工艺和装置 - Google Patents

使用六氯乙硅烷或其它含氯硅前驱体的微构件填充工艺和装置 Download PDF

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CN101111931B
CN101111931B CN2005800468576A CN200580046857A CN101111931B CN 101111931 B CN101111931 B CN 101111931B CN 2005800468576 A CN2005800468576 A CN 2005800468576A CN 200580046857 A CN200580046857 A CN 200580046857A CN 101111931 B CN101111931 B CN 101111931B
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gas
processing gas
little member
substrate
siliceous
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CN101111931A (zh
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艾伦·利思
安东尼·迪朴
吴昇昊
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
CN2005800468576A 2005-01-18 2005-11-30 使用六氯乙硅烷或其它含氯硅前驱体的微构件填充工艺和装置 Expired - Lifetime CN101111931B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/035,730 US7205187B2 (en) 2005-01-18 2005-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
US11/035,730 2005-01-18
PCT/US2005/043027 WO2006078354A2 (en) 2005-01-18 2005-11-30 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

Publications (2)

Publication Number Publication Date
CN101111931A CN101111931A (zh) 2008-01-23
CN101111931B true CN101111931B (zh) 2010-05-12

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CN2005800468576A Expired - Lifetime CN101111931B (zh) 2005-01-18 2005-11-30 使用六氯乙硅烷或其它含氯硅前驱体的微构件填充工艺和装置

Country Status (7)

Country Link
US (1) US7205187B2 (enExample)
EP (1) EP1842231A4 (enExample)
JP (1) JP5068178B2 (enExample)
KR (1) KR101133349B1 (enExample)
CN (1) CN101111931B (enExample)
TW (1) TWI306629B (enExample)
WO (1) WO2006078354A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263474B2 (en) * 2007-01-11 2012-09-11 Tokyo Electron Limited Reduced defect silicon or silicon germanium deposition in micro-features
JP2010529670A (ja) * 2007-06-07 2010-08-26 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体適用のための非可燃性溶媒
DE102009002129A1 (de) 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US20110256734A1 (en) 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
JP6022273B2 (ja) 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
JP6055795B2 (ja) * 2014-06-26 2016-12-27 株式会社豊田中央研究所 半導体装置の製造方法
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
US9620356B1 (en) * 2015-10-29 2017-04-11 Applied Materials, Inc. Process of selective epitaxial growth for void free gap fill
JP6640596B2 (ja) * 2016-02-22 2020-02-05 東京エレクトロン株式会社 成膜方法
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
JP7061432B2 (ja) * 2017-02-16 2022-04-28 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｓｉ含有膜の成膜方法
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN114127890B (zh) 2019-05-01 2025-10-14 朗姆研究公司 调整的原子层沉积
KR20220006663A (ko) 2019-06-07 2022-01-17 램 리써치 코포레이션 원자 층 증착 동안 막 특성들의 인-시츄 (in-situ) 제어
JP2024066258A (ja) * 2022-11-01 2024-05-15 東京エレクトロン株式会社 成膜方法及び成膜装置
US20250112039A1 (en) * 2023-10-03 2025-04-03 Applied Materials, Inc. Seam-free single operation amorphous silicon gap fill

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1039680A (zh) * 1988-02-01 1990-02-14 佳能株式会社 形成功能沉积膜的方法
CN1260842A (zh) * 1997-05-22 2000-07-19 东京电子有限公司 低压溅镀的方法与装置
CN1490845A (zh) * 2002-09-19 2004-04-21 ���ǵ�����ʽ���� 半导体器件及其制造方法
CN1542945A (zh) * 2003-04-04 2004-11-03 ����ʿ�뵼��ɷ����޹�˾ 半导体装置的电容器的制造方法
CN1552097A (zh) * 2001-05-04 2004-12-01 ���������ƴ���ʽ���� 具有连续沉积和蚀刻的电离pvd

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766342A (en) * 1994-10-19 1998-06-16 Matsushita Electric Industrial Co., Ltd. Method for forming silicon film and silicon film forming apparatus
US6184158B1 (en) 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US6797558B2 (en) * 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
WO1999045167A1 (en) * 1998-03-06 1999-09-10 Asm America, Inc. Method of depositing silicon with high step coverage
WO2001041544A2 (en) 1999-12-11 2001-06-14 Asm America, Inc. Deposition of gate stacks including silicon germanium layers
KR100407684B1 (ko) * 2000-06-28 2003-12-01 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US20040009336A1 (en) * 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
US6605535B1 (en) * 2002-09-26 2003-08-12 Promos Technologies, Inc Method of filling trenches using vapor-liquid-solid mechanism
CN100389482C (zh) * 2002-11-11 2008-05-21 株式会社日立国际电气 基板处理装置
JP2005322859A (ja) * 2004-05-11 2005-11-17 Sony Corp 半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1039680A (zh) * 1988-02-01 1990-02-14 佳能株式会社 形成功能沉积膜的方法
CN1260842A (zh) * 1997-05-22 2000-07-19 东京电子有限公司 低压溅镀的方法与装置
CN1552097A (zh) * 2001-05-04 2004-12-01 ���������ƴ���ʽ���� 具有连续沉积和蚀刻的电离pvd
CN1490845A (zh) * 2002-09-19 2004-04-21 ���ǵ�����ʽ���� 半导体器件及其制造方法
CN1542945A (zh) * 2003-04-04 2004-11-03 ����ʿ�뵼��ɷ����޹�˾ 半导体装置的电容器的制造方法

Also Published As

Publication number Publication date
WO2006078354A3 (en) 2006-12-07
KR101133349B1 (ko) 2012-04-06
EP1842231A2 (en) 2007-10-10
US7205187B2 (en) 2007-04-17
US20060160288A1 (en) 2006-07-20
WO2006078354A2 (en) 2006-07-27
JP5068178B2 (ja) 2012-11-07
CN101111931A (zh) 2008-01-23
TW200639940A (en) 2006-11-16
JP2008527738A (ja) 2008-07-24
KR20070092958A (ko) 2007-09-14
TWI306629B (en) 2009-02-21
EP1842231A4 (en) 2008-11-26

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