KR101098796B1 - 칩형 고체전해 캐패시터 및 이것의 제조방법 - Google Patents
칩형 고체전해 캐패시터 및 이것의 제조방법 Download PDFInfo
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- KR101098796B1 KR101098796B1 KR1020067002965A KR20067002965A KR101098796B1 KR 101098796 B1 KR101098796 B1 KR 101098796B1 KR 1020067002965 A KR1020067002965 A KR 1020067002965A KR 20067002965 A KR20067002965 A KR 20067002965A KR 101098796 B1 KR101098796 B1 KR 101098796B1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 154
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000007784 solid electrolyte Substances 0.000 title 1
- 239000007787 solid Substances 0.000 claims abstract description 108
- 239000004065 semiconductor Substances 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 45
- 239000011347 resin Substances 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 21
- 229920001940 conductive polymer Polymers 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 239000011888 foil Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- -1 chloriranyl Chemical group 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 125000001424 substituent group Chemical group 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229920000128 polypyrrole Polymers 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 3
- 230000026731 phosphorylation Effects 0.000 claims description 3
- 238000006366 phosphorylation reaction Methods 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920000414 polyfuran Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 238000005987 sulfurization reaction Methods 0.000 claims description 3
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 claims description 3
- 125000004417 unsaturated alkyl group Chemical group 0.000 claims description 3
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 claims 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 239000004020 conductor Substances 0.000 description 16
- 238000000465 moulding Methods 0.000 description 16
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 7
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 230000032683 aging Effects 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229920000180 alkyd Polymers 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 2
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- MMNWSHJJPDXKCH-UHFFFAOYSA-N 9,10-dioxoanthracene-2-sulfonic acid Chemical compound C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MMNWSHJJPDXKCH-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000007860 aryl ester derivatives Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/02—Diaphragms; Separators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/14—Structural combinations or circuits for modifying, or compensating for, electric characteristics of electrolytic capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
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Abstract
Description
Claims (21)
- 한 쌍의 대향하여 배치된 리드 프레임의 단부에 간극없이 병렬로 수평하게 서로 접하여 위치한 복수의 고체전해 캐패시터 소자, 및 상기 복수의 캐패시터 소자에 걸쳐 캐패시터 소자간의 경계부분을 덮도록 연장되어 있고 그 캐패시터 소자 서로를 고정하는 고정층을 포함하고, 상기 고체전해 캐패시터 소자는 밸브작용 금속 또는 도전성 산화물의 소결체로 이루어지거나 또는 금속 와이어와 접속된 상기 소결체로 이루어진 애노드 기판의 일단의 애노드부를 제외한 표면상에 산화 유전체막층, 유기 반도체층 및 도전체층을 순차로 적층하여 캐소드부를 형성함으로써 제조되며, 상기 애노드부와 캐소드부 각각은 리드 프레임의 단부와 접속되도록 위치되어 있는 것을 특징으로 하는 수지몰딩된 칩형 고체전해 캐패시터에 있어서,상기 유기 반도체층에 있어서 유기 반도체는 벤조피롤린 테트라머 및 클로라닐로 이루어진 유기 반도체, 테트라티오테트라센을 포함하는 유기 반도체, 테트라시아노퀴노디메탄을 포함하는 유기 반도체, 및 하기 일반식(1) 또는 (2)으로 표시되는 반복단위를 함유하는 폴리머에 도펀트를 도핑함으로써 얻어진 도전성 폴리머를 포함하는 유기 반도체 중에서 선택되는 1종 이상인 것을 특징으로 하는 칩형 고체전해 캐패시터.(식중, R1~R4는 각각 독립적으로 수소원자, 탄소수 1~6개의 알킬기 또는 탄소수 1~6개의 알콕시기를 나타내고, X는 산소원자, 황원자 또는 질소원자를 나타내고, R5는 X가 질소원자일 경우에만 존재하고, 수소원자 또는 탄소수 1~6개의 알킬기를 나타내며, 한 쌍의 R1과 R2 및 R3와 R4의 각각은 서로 결합하여 환구조를 형성해도 좋다.)
- 삭제
- 제1항에 있어서, 상기 고정층은 수지층 또는 도전체층인 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 애노드부는 애노드 기판의 말단을 포함하는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 애노드부는 상기 소결체에 접속된 금속 와이어 또는 호일을 포함하는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제5항에 있어서, 상기 금속 와이어는 탄탈, 니오브, 알루미늄, 티타늄, 이러한 금속을 포함하는 합금, 및 이들 금속 및 합금의 일부 산화물 및 질화물 중 어느 하나 이상 중에서 선택되는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 밸브작용 금속 또는 도전성 산화물이 탄탈, 알루미늄, 니오브, 티타늄, 이러한 밸브작용 금속 또는 산화니오브를 포함하는 합금, 또는 이들 밸브작용 금속, 합금 및 도전성 산화물 중에서 선택되는 2종 이상의 혼합물인 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제7항에 있어서, 상기 밸브작용 금속, 합금 또는 도전성 산화물은 탄화물화, 인화, 붕소화, 질화 및 황화 중에서 선택되는 하나 이상의 처리를 행한 것임을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 소결체는 화학적으로 및 전기적으로 중 어느 하나 이상으로 에칭된 표면을 갖는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 애노드 기판의 애노드부와 애노드부를 제외한 부분 사이의 경계가 절연성 수지로 절연되어 있는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제1항에 있어서, 상기 산화 유전체층은 Ta2O5, Al2O3, TiO2 및 Nb2O5 중에서 선택되는 1종 이상을 포함하는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 삭제
- 삭제
- 제1항에 있어서, 상기 일반식(1)으로 표시되는 반복단위를 함유하는 도전성 폴리머는 하기 일반식(3)으로 표시되는 구조단위를 반복단위로서 함유하는 도전성 폴리머인 것을 특징으로 하는 칩형 고체전해 캐패시터.(식중, R6와 R7은 각각 독립적으로 수소원자, 탄소수 1~6개의 직쇄상 또는 분기상 포화 또는 불포화 알킬기, 또는 그 알킬기가 임의의 위치에서 서로 결합하는 경우 2개의 산소원자를 함유하는 5, 6 또는 7원환의 포화 탄화수소 환구조를 하나 이상 형성하는 치환기를 나타내고, 그 환구조로는 치환기를 갖고 있어도 좋은 비닐렌 결합을 가진 구조 및 치환기를 갖고 있어도 좋은 페닐렌 구조가 열거된다.)
- 제1항에 있어서, 상기 도전성 폴리머는 폴리아닐린, 폴리옥시페닐렌, 폴리페닐렌 술피드, 폴리티오펜, 폴리푸란, 폴리피롤, 폴리메틸피롤, 및 그 치환 유도체 및 코폴리머 중에서 선택되는 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 제15항에 있어서, 상기 도전성 폴리머가 폴리(3,4-에틸렌디옥시티오펜)인 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 삭제
- 제1항에 있어서, 상기 유기 반도체의 전도도가 10-2~103S/cm인 것을 특징으로 하는 칩형 고체전해 캐패시터.
- 삭제
- 삭제
- 삭제
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US7551424B2 (en) * | 2004-03-30 | 2009-06-23 | Rohm Co., Ltd. | Solid electrolytic capacitor |
CN101894685B (zh) * | 2005-01-24 | 2013-02-27 | 松下电器产业株式会社 | 片式固体电解电容器 |
US7768773B2 (en) * | 2008-01-22 | 2010-08-03 | Avx Corporation | Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor |
JP5105479B2 (ja) * | 2008-02-13 | 2012-12-26 | Necトーキン株式会社 | 固体電解コンデンサ |
JP5698450B2 (ja) * | 2009-09-24 | 2015-04-08 | 昭和電工株式会社 | 固体電解コンデンサの製造方法 |
JP6776731B2 (ja) * | 2016-08-29 | 2020-10-28 | 株式会社村田製作所 | 固体電解コンデンサ |
JP6975915B2 (ja) * | 2018-04-25 | 2021-12-01 | パナソニックIpマネジメント株式会社 | 電子部品 |
CN113948427B (zh) * | 2021-10-15 | 2022-04-15 | 王琮 | 用于半导体封装的一体化封装装置及封装方法 |
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JPS6037114A (ja) | 1983-08-09 | 1985-02-26 | 昭和電工株式会社 | 固体電解コンデンサ |
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JPH05343272A (ja) * | 1992-06-09 | 1993-12-24 | Showa Denko Kk | 固体電解コンデンサ |
FI97288C (fi) * | 1993-08-26 | 1996-11-25 | Kemira Oy | Jätevesilietteen käsittelymenetelmä |
JP3365058B2 (ja) * | 1994-07-07 | 2003-01-08 | 松下電器産業株式会社 | チップ部品集合体の製造方法およびチップ部品の装着方法 |
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TW479262B (en) | 1999-06-09 | 2002-03-11 | Showa Denko Kk | Electrode material for capacitor and capacitor using the same |
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JP3276113B1 (ja) * | 2000-05-26 | 2002-04-22 | 松下電器産業株式会社 | 固体電解コンデンサ |
US6449140B1 (en) * | 2000-07-07 | 2002-09-10 | Showa Denko K.K. | Solid electrolytic capacitor element and method for producing the same |
BR0113215A (pt) | 2000-08-10 | 2005-02-01 | Showa Denko Kk | Pó de nióbio, corpo sinterizado e capacitor usando o corpo |
JP3984519B2 (ja) * | 2001-08-22 | 2007-10-03 | 昭和電工株式会社 | コンデンサ |
KR20040054674A (ko) * | 2001-08-22 | 2004-06-25 | 쇼와 덴코 가부시키가이샤 | 콘덴서 |
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US7609505B2 (en) | 2009-10-27 |
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