KR101069113B1 - 칼륨 하이드로젠 퍼옥시모노설페이트 용액 - Google Patents
칼륨 하이드로젠 퍼옥시모노설페이트 용액 Download PDFInfo
- Publication number
- KR101069113B1 KR101069113B1 KR1020057018493A KR20057018493A KR101069113B1 KR 101069113 B1 KR101069113 B1 KR 101069113B1 KR 1020057018493 A KR1020057018493 A KR 1020057018493A KR 20057018493 A KR20057018493 A KR 20057018493A KR 101069113 B1 KR101069113 B1 KR 101069113B1
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- Prior art keywords
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- composition
- khso
- water
- active oxygen
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
- C01B15/06—Peroxyhydrates; Peroxyacids or salts thereof containing sulfur
- C01B15/08—Peroxysulfates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
Abstract
Description
온도 | 삼중염* | KHSO5 | KHSO4 | K2SO4 |
0℃ | 11 | 51 | 37 | 8 |
10℃ | 21 | 61 | 45 | 10 |
20℃ | 30 | 72 | 53 | 11 |
30℃ | 34 | 83 | 61 | 13 |
40℃ | 42 | 93 | 70 | 14 |
50℃ | 44 | 104 | 79 | 16 |
* 시판품으로 이용할 수 있는 2KHSO5ㆍKHSO4ㆍK2SO4 |
기간 후에 잔류하는 활성 산소 % (초기 함량을 기준으로 함) | ||||
통상적인 용액* | 고농도 용액* | |||
시간 | 실온** | 35℃ | 실온** | 35℃ |
초기 (0 일) | 100 | 100 | 100 | 100 |
1 주일 | 100 | 93 | 98 | 96 |
2 주일 | 99 | 87 | 97 | 93 |
1 개월 | 96 | 80 | 95 | 85 |
2 개월 | 94 | 70 | 91 | 68 |
* 통상적인 완전 용액은 12.6 g의 옥손 상표의 칼륨 모노퍼설페이트를 실온에서 100 g의 탈이온수에 용해시킴으로써 제조되었다 (11.2 wt%, 0.51% 활성 산소 함량). 본 발명의 고농도 칼륨 하이드로젠 퍼옥시모노설페이트 용액은 실시예 1에 기술된 바와 같이 제조되었다. ** 실온은 22℃+/-2℃였다. |
실시예 | 온도 ℃ | 100 g의 H2O당, 옥손의 g(1) |
활성 산소 중량% | 배수(2) |
2 | 0 | 18 | 0.69 | |
3 비교예 A |
0 0 |
123 11 |
2.49 0.45 |
5.5 |
4 | 10 | 35 | 1.17 | |
5 비교예 B |
10 10 |
142 21 |
2.65 0.78 |
3.4 |
6 | 20 | 52 | 1.55 | |
7 비교예 C |
20 20 |
165 30 |
2.82 1.04 |
2.7 |
8 | 30(3) | 62 | 1.73 | |
9 비교예 D |
30(3) 30(3) |
221 34 |
3.11 1.15 |
2.7 |
10 | 40(3) | 80 | 2.01 | |
11 비교예 E |
40(3) 40(3) |
291 42 |
3.36 1.34 |
2.5 |
(1) 옥손 상표의 칼륨 모노퍼설페이트 (2) 배수 (multiple)는 실시예의 활성 산소 퍼센트를 표의 동일한 난에 기재된 비교실시예의 활성 산소의 퍼센트로 나눈 값이다. (3) 상승된 여액 온도가 30℃ 및 40℃ 실시예에서 유지되지 않는다면, 용질은 침전할 것이며, 이것은 어떤 염(들)이 용액으로부터 석출되는지에 따라서 활성 산소 농도를 감소시킬 수 있다. |
실시예 | 온도 | % KHSO5 | % KHSO4 | % TDS(1) | 잔류 설페이트 % (주로 K2SO4)(2) |
SO5/SO4 (3) |
최소 칼륨 모노퍼설페이트를 사용한 실시예 | ||||||
2 | 0℃ | 6.5 | 2.9 | 14.8 | 5.4 | 1.0:1 |
6 | 20℃ | 15.6 | 7.2 | 30.2 | 7.4 | 1.3:1 |
10 | 40℃ | 20.5 | 9.4 | 40.0 | 10.1 | 1.2:1 |
최대 칼륨 모노퍼설페이트를 사용한 실시예 | ||||||
3 | 0℃ | 23.5 | 11.1 | 41.6 | 7.0 | 1.5:1 |
7 | 20℃ | 27.5 | 11.5 | 47.6 | 8.6 | 1.6:1 |
11 | 40℃ | 32.9 | 14.4 | 57.1 | 9.8 | 1.6:1 |
비교실시예 (완전 용액) | ||||||
C | 20℃ | 9.9 | 5.6 | 23.1 | 7.6 | 0.9:1(4) |
(1) TDS: 용해된 총고체 (2) 차이 TDS - (% KHSO5 + % KHSO4)에 의해서 계산된 값; K2SO4에 대한 실제값은 칼륨 모노퍼설페이트 내의 소량의 첨가제 및 불순물로 인하여 나타낸 것보다 약간 작다. (3) 총 SO4에 대한 SO5의 중량비 (4) 모든 온도에서 통상적인 총용액에 대한 SO5/SO4 비는 칼륨 모노퍼설페이트의 고체 상태 조성물에 의해서 지시된다. |
특징 | 실시예 12 | 비교실시예 F |
SO5/SO4 중량비 | 1.5 | 0.9 |
CuSO4를 침전시키는 시간 | 40분 | 20분 |
Cu 충진 용량 | 24.3 Cu/용액 ㎏ | 14.8 g Cu/용액 ㎏ |
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/404,200 US6818142B2 (en) | 2003-03-31 | 2003-03-31 | Potassium hydrogen peroxymonosulfate solutions |
US10/404,200 | 2003-03-31 | ||
PCT/US2004/010043 WO2004089817A1 (en) | 2003-03-31 | 2004-03-31 | Potassium hydrogen peroxymonosulfate solutions |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060013493A KR20060013493A (ko) | 2006-02-10 |
KR101069113B1 true KR101069113B1 (ko) | 2011-09-30 |
Family
ID=33096896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018493A KR101069113B1 (ko) | 2003-03-31 | 2004-03-31 | 칼륨 하이드로젠 퍼옥시모노설페이트 용액 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6818142B2 (ko) |
EP (1) | EP1608591A1 (ko) |
JP (1) | JP4745221B2 (ko) |
KR (1) | KR101069113B1 (ko) |
CN (1) | CN1331736C (ko) |
CA (1) | CA2517511A1 (ko) |
MY (1) | MY138355A (ko) |
TW (1) | TWI348993B (ko) |
WO (1) | WO2004089817A1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7329365B2 (en) * | 2004-08-25 | 2008-02-12 | Samsung Electronics Co., Ltd. | Etchant composition for indium oxide layer and etching method using the same |
KR101191405B1 (ko) * | 2005-07-13 | 2012-10-16 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 |
US20070023364A1 (en) * | 2005-07-28 | 2007-02-01 | Felkner I C | Tetrasilver Tetraoxide as Disinfective Agent for Cryptosporidium |
US20070138109A1 (en) * | 2005-12-21 | 2007-06-21 | Tufano Thomas P | Oxidizing composition for salt water |
US7442323B2 (en) * | 2006-06-02 | 2008-10-28 | E. I. Du Pont De Nemours And Company | Potassium monopersulfate solutions |
JP2010541192A (ja) * | 2007-08-20 | 2010-12-24 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入フォトレジストを除去するための組成物および方法 |
EP2288965A4 (en) * | 2008-05-01 | 2011-08-10 | Advanced Tech Materials | LOW PH MIXTURES FOR REMOVAL OF HIGH DENSITY IMPLANTED RESERVE |
TWI480360B (zh) * | 2009-04-03 | 2015-04-11 | Du Pont | 蝕刻劑組成物及方法 |
US20100252530A1 (en) * | 2009-04-03 | 2010-10-07 | E. I. Du Pont De Nemours And Company | Etchant composition and method |
JP5340071B2 (ja) * | 2009-08-03 | 2013-11-13 | 株式会社Adeka | 安定剤を含むペルオキシ一硫酸水溶液の製造方法 |
CN102260871A (zh) * | 2011-06-24 | 2011-11-30 | 李沛泓 | 印刷线路板微蚀刻剂 |
EP2572776A1 (en) * | 2011-09-21 | 2013-03-27 | Evonik Degussa GmbH | Device for mixing and cooling two reactive liquids and method of making peroxomonosulphuric acid with the device |
EP2572781A1 (en) | 2011-09-21 | 2013-03-27 | Evonik Degussa GmbH | Device and method for making a dilute aqueous solution of peroxomonosulphuric acid |
CN110172349B (zh) * | 2019-05-08 | 2020-11-20 | 厦门大学 | 一种氮化镓半导体光电化学刻蚀液及加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855805A (en) | 1996-08-08 | 1999-01-05 | Fmc Corporation | Microetching and cleaning of printed wiring boards |
JPH11172467A (ja) | 1997-12-10 | 1999-06-29 | Ebara Densan Ltd | エッチング液 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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DE106331C (ko) | ||||
US2500881A (en) * | 1949-05-10 | 1950-03-14 | Stader William | Hanger support |
BE579110A (ko) | 1958-05-29 | |||
US3048546A (en) | 1959-02-24 | 1962-08-07 | Du Pont | Bleaching compositions |
US3041139A (en) * | 1960-06-24 | 1962-06-26 | Du Pont | Method of preparing monopersulfate composition containing the triple salt khso4?k2so4?2khso5 |
US4579725A (en) | 1983-12-30 | 1986-04-01 | E. I. Du Pont De Nemours And Company | Potassium monopersulfate compositions and process for preparing them |
DE3485660D1 (de) * | 1983-12-30 | 1992-05-21 | Du Pont | Kaliummonopersulfat-zusammensetzungen und verfahren zu deren herstellung. |
DE3427119A1 (de) | 1984-07-23 | 1986-01-23 | Peroxid-Chemie GmbH, 8023 Höllriegelskreuth | Verfahren zur herstellung von kaliumpermonosulfat-tripelsalz |
DE3914827C2 (de) | 1989-05-05 | 1995-06-14 | Schuelke & Mayr Gmbh | Flüssiges Desinfektionsmittelkonzentrat |
US5139763A (en) * | 1991-03-06 | 1992-08-18 | E. I. Du Pont De Nemours And Company | Class of stable potassium monopersulfate compositions |
DE19503900C1 (de) | 1995-02-07 | 1995-11-23 | Degussa | Verfahren zur Herstellung des Kaliumperoxomonosulfat-Tripelsalzes 2 KHSO¶5¶ . KHSO¶4¶ . K¶2¶SO¶4¶ |
EP0852615B1 (en) * | 1996-07-25 | 2005-12-14 | DuPont Air Products NanoMaterials L.L.C. | Chemical mechanical polishing composition and process |
US6200454B1 (en) | 1997-12-24 | 2001-03-13 | Mitsubishi Gas Chemical Company, Inc. | Process for producing sodium persulfate |
JP2000064067A (ja) * | 1998-06-09 | 2000-02-29 | Ebara Densan Ltd | エッチング液および銅表面の粗化処理方法 |
US6255117B1 (en) | 1999-06-04 | 2001-07-03 | Lamotte Company | Method and device for determining monopersulfate |
JP3974305B2 (ja) * | 1999-06-18 | 2007-09-12 | エルジー フィリップス エルシーディー カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器 |
-
2003
- 2003-03-31 US US10/404,200 patent/US6818142B2/en not_active Expired - Lifetime
-
2004
- 2004-03-05 TW TW093105892A patent/TWI348993B/zh not_active IP Right Cessation
- 2004-03-30 MY MYPI20041139A patent/MY138355A/en unknown
- 2004-03-31 EP EP04749617A patent/EP1608591A1/en not_active Withdrawn
- 2004-03-31 JP JP2006509586A patent/JP4745221B2/ja not_active Expired - Lifetime
- 2004-03-31 KR KR1020057018493A patent/KR101069113B1/ko active IP Right Grant
- 2004-03-31 WO PCT/US2004/010043 patent/WO2004089817A1/en active Application Filing
- 2004-03-31 CN CNB2004800088248A patent/CN1331736C/zh not_active Expired - Lifetime
- 2004-03-31 CA CA002517511A patent/CA2517511A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855805A (en) | 1996-08-08 | 1999-01-05 | Fmc Corporation | Microetching and cleaning of printed wiring boards |
JPH11172467A (ja) | 1997-12-10 | 1999-06-29 | Ebara Densan Ltd | エッチング液 |
Also Published As
Publication number | Publication date |
---|---|
TW200502159A (en) | 2005-01-16 |
TWI348993B (en) | 2011-09-21 |
KR20060013493A (ko) | 2006-02-10 |
US20040197261A1 (en) | 2004-10-07 |
JP4745221B2 (ja) | 2011-08-10 |
CN1768005A (zh) | 2006-05-03 |
WO2004089817A1 (en) | 2004-10-21 |
US6818142B2 (en) | 2004-11-16 |
CA2517511A1 (en) | 2004-10-21 |
CN1331736C (zh) | 2007-08-15 |
EP1608591A1 (en) | 2005-12-28 |
MY138355A (en) | 2009-05-29 |
JP2006522003A (ja) | 2006-09-28 |
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