JP4745221B2 - ペルオキシモノ硫酸水素カリウム溶液 - Google Patents
ペルオキシモノ硫酸水素カリウム溶液 Download PDFInfo
- Publication number
- JP4745221B2 JP4745221B2 JP2006509586A JP2006509586A JP4745221B2 JP 4745221 B2 JP4745221 B2 JP 4745221B2 JP 2006509586 A JP2006509586 A JP 2006509586A JP 2006509586 A JP2006509586 A JP 2006509586A JP 4745221 B2 JP4745221 B2 JP 4745221B2
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- Prior art keywords
- solution
- copper
- potassium
- water
- active oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000012425 OXONE® Substances 0.000 title claims description 64
- OKBMCNHOEMXPTM-UHFFFAOYSA-M potassium peroxymonosulfate Chemical compound [K+].OOS([O-])(=O)=O OKBMCNHOEMXPTM-UHFFFAOYSA-M 0.000 title claims description 20
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 claims description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 32
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 20
- 239000002002 slurry Substances 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000002671 adjuvant Substances 0.000 claims description 6
- -1 heterocyclic azoles Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 5
- 239000011707 mineral Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 229940087596 sodium phenolsulfonate Drugs 0.000 claims description 2
- BLXAGSNYHSQSRC-UHFFFAOYSA-M sodium;2-hydroxybenzenesulfonate Chemical compound [Na+].OC1=CC=CC=C1S([O-])(=O)=O BLXAGSNYHSQSRC-UHFFFAOYSA-M 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- NESLWCLHZZISNB-UHFFFAOYSA-M sodium phenolate Chemical compound [Na+].[O-]C1=CC=CC=C1 NESLWCLHZZISNB-UHFFFAOYSA-M 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 1
- 239000000243 solution Substances 0.000 description 112
- 239000000758 substrate Substances 0.000 description 19
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000706 filtrate Substances 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000004480 active ingredient Substances 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 3
- 229910052939 potassium sulfate Inorganic materials 0.000 description 3
- 235000011151 potassium sulphates Nutrition 0.000 description 3
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 description 2
- 239000001692 EU approved anti-caking agent Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004061 bleaching Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000343 potassium bisulfate Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- QDHHCQZDFGDHMP-UHFFFAOYSA-N Chloramine Chemical class ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical class [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 230000000855 fungicidal effect Effects 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
- C01B15/06—Peroxyhydrates; Peroxyacids or salts thereof containing sulfur
- C01B15/08—Peroxysulfates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
Description
実施例で用いるオキソン(OXONE)モノ過硫酸塩化合物は、本願特許出願人より入手可能である。
(活性酸素測定)
全ての実施例において、活性酸素濃度は重量%で表してあり、「オキソン(OXONE)モノ過硫酸塩化合物技術情報」会報(No.H−42434−5、2000年4月、本願特許出願人により発行)に記載された標準ヨウ素滴定により求めてある。簡単に述べると、分析する溶液の秤量した一定分量を、冷脱イオン水で希釈し、酸性化し、ヨウ化カリウムで処理し、澱粉指示薬により目視される終点まで標準0.1Nチオ硫酸ナトリウム試薬で滴定する。活性酸素(AO)含量は、次式により計算する。
%AO=0.8(滴定液の容積、mL)(滴定液の規定濃度)/(試料重量、g)。
%KHSO5=%AO/0.105。
オキソン(OXONE)商標のモノ過硫酸カリウム(104g、固体として4.52%の活性酸素)を、52gの脱イオン水(水100g当たり200gのオキソン(OXONE)と等価)でスラリー化した。スラリーを周囲室温(22℃+/−2℃)で一晩攪拌し、粗ガラスフィルタ漏斗を通してろ過して、未溶解の硫酸カリウムおよび重硫酸塩を除去した。透明なろ液を次のようにして分析した。
これらの実施例では、様々な有用な濃度および広い温度範囲にわたる本発明の高強度ペルオキシモノ硫酸水素カリウム溶液の調製を例証した。表3に示した秤量した量のオキソン(OXONE)商標のモノ過硫酸カリウム(固体として4.52%活性酸素)を脱イオン水100グラムでスラリー化した。スラリーは、表3に示した恒温(水浴)でスラリー化した。各スラリーを所定の温度で少なくとも3時間、24時間未満平衡させた。各スラリーを実施例1に記載したようにしてろ過したところ、いずれの場合も透明なろ液が得られた。このようにして得られた高強度溶液を表3に示すようにして分析した。
これらの例では、従来技術の完全溶液の調製を例証した。表3に示した秤量した量のオキソン(OXONE)商標のモノ過硫酸カリウム(固体として4.52%活性酸素)を所定の温度で脱イオン水100グラムで溶解した。いずれの場合も過剰の固体が溶解しないまま残ることはなかった。表3に示す値は、モノ過硫酸カリウムの水中での最大の従来の溶解度を表している。各溶液についての%活性酸素含量を表3に示す。いずれの場合も、SO5対合計SO4の重量比は、固体状態のモノ過硫酸カリウムの場合と同じであり、0.9に等しい。
本実施例では、本発明の高強度溶液を用いて、不活性硫酸塩含量が低く、銅充填容量の高い銅マイクロエッチ浴を作成するやり方を例証した。高強度ペルオキシモノ硫酸水素カリウム溶液は実施例1に記載した通りに調製した。15.3gの高強度溶液を34.7gの脱イオン水で希釈して、0.91%の活性酸素と4.1%の硫酸塩(SO4として)を有する溶液を生成することにより、50グラムのマイクロエッチ浴を作成した。マイクロエッチ溶液を攪拌しながら30℃まで平衡させた。予め秤量しておいた2.5インチ平方(40.3cm3)の銅でクラッディングされた基板を、この浴に入れ、硫酸銅の沈殿が最初に観察されるまで、合計で40分間マイクロエッチした。この時点で基板を取り出し、濯いで乾燥し、再秤量した。合計で1.216gのCuが除去された。これは、銅充填容量が出発マイクロエッチ溶液1000g当たり24.3gであることを示している。全実験にわたる平均エッチレートは、34.8マイクロインチ/分(0.88マイクロメートル/分)であった。初期エッチレートは45.3マイクロインチ/分(1.15マイクロメートル/分)であった。得られた硫酸銅は、粗さが向上しており、特徴的な「マットピンク」の概観を呈した。これらの結果を比較例Fの結果と共に表5にまとめてある。本発明の高強度ペルオキシモノ硫酸水素カリウムの溶液を用いて銅マイクロエッチ浴を作成することにより、硫酸塩の充填が少ないため、2倍長い浴寿命および64%多い銅充填容量が得られた。
この例では、ペルオキシモノ硫酸水素カリウム溶液の従来の完全溶液のマイクロエッチ浴による比較を例証した。10.1gのオキソン(OXONE)商標のモノ過硫酸カリウム溶液(固体として4.52%活性酸素)を脱イオン水39.9gに溶解して、0.91%の活性酸素と6.4%の硫酸塩(SO4として)を有する溶液を生成することにより、50グラムのマイクロエッチ浴を作成した。マイクロエッチ溶液を攪拌しながら30℃まで平衡させた。予め秤量しておいた2.5インチ平方(40.3cm2)の銅でクラッディングされた基板を、この浴に入れ、硫酸銅の沈殿が最初に観察されるまで、合計で20分間マイクロエッチした。この時点で基板を取り出し、濯いで乾燥し、再秤量した。合計で0.74gのCuが除去された。これは、銅充填容量が出発マイクロエッチ溶液1000g当たり14.8gであることを示している。全実験にわたる平均エッチレートは、42.4マイクロインチ/分(1.08マイクロメートル/分)であった。初期エッチレートは32.3マイクロインチ/分(0.82マイクロメートル/分)であった。得られた硫酸銅は、粗さが向上しており、特徴的な「マットピンク」の概観を呈した。これらの結果を表5にまとめてある。
Claims (18)
- SO5対SO4の最低重量比が1.0:1を超えるペルオキシモノ硫酸水素カリウムの溶液を含むことを特徴とする組成物。
- SO5対SO4の最低比が1.2:1を超えることを特徴とする請求項1に記載の組成物。
- SO5対SO4の最低比が1.3:1を超えることを特徴とする請求項1に記載の組成物。
- 前記ペルオキシモノ硫酸水素カリウムの溶液が、20℃から40℃の温度で、1.55から3.36に等しい活性酸素含量を有することを特徴とする請求項1に記載の組成物。
- 前記活性酸素含量が、20から40℃の温度で、1.73から3.11に等しいことを特徴とする請求項4に記載の組成物。
- 塩酸以外の鉱酸、C1〜C4有機酸、界面活性剤、前記組成物を安定化する安定剤としてのフェノールスルホン酸ナトリウム、およびエッチレート修正剤としての窒素含有複素環式アゾールよりなる群から選択される補助剤をさらに含むことを特徴とする請求項1または4に記載の組成物。
- 印刷配線基板の製造に用いるマイクロエッチ濃縮液の調製のための請求項1または4に記載の組成物の使用。
- 化学機械研磨スラリーの成分としての請求項1または4に記載の組成物の使用。
- a)固体2KHSO5・KHSO4・K2SO4を、その固体を完全に溶解するには不十分な量の水と混合する工程と、b)混合して平衡化したスラリーを形成する工程と、c)未溶解の固体を分離して溶液を得る工程とを含むことを特徴とする請求項1または4に記載のペルオキシモノ硫酸水素カリウム溶液の調製方法。
- 少なくとも52gの塩を100gの水と20℃で混合することを特徴とする請求項9に記載の方法。
- 前記水が脱イオン水であることを特徴とする請求項9に記載の方法。
- 未溶解固体の分離後、塩酸以外の鉱酸、C1〜C4有機酸、界面活性剤、前記組成物を安定化する安定剤としてのフェノールスルホン酸ナトリウム、およびエッチレート修正剤としての窒素含有複素環式アゾールよりなる群から選択される補助剤を添加する工程をさらに含むことを特徴とする請求項9に記載の方法。
- 改良された表面マイクロエッチング方法であって、前記改良点が、エッチされる表面を、1.0:1を超えるSO5対SO4の最低重量比を有するペルオキシモノ硫酸水素カリウムの溶液と接触させる工程を含むことを特徴とする方法。
- 前記溶液が、1.5:1を超えるSO5対SO4の最低重量比を有することを特徴とする請求項13に記載の方法。
- エッチングされる前記表面が金属であることを特徴とする請求項13に記載の方法。
- エッチングされる前記表面が金属コートされた半導体または印刷配線基板であることを特徴とする請求項13に記載の方法。
- エッチングされる前記表面が銅または銅合金によりクラッディングされていることを特徴とする請求項13に記載の方法。
- 前記溶液の銅充填容量が溶液1kg当たり少なくとも銅15gであることを特徴とする請求項13に記載の方法。
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PCT/US2004/010043 WO2004089817A1 (en) | 2003-03-31 | 2004-03-31 | Potassium hydrogen peroxymonosulfate solutions |
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US7329365B2 (en) * | 2004-08-25 | 2008-02-12 | Samsung Electronics Co., Ltd. | Etchant composition for indium oxide layer and etching method using the same |
KR101191405B1 (ko) * | 2005-07-13 | 2012-10-16 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 액정 표시 장치의 제조 방법 |
US20070023364A1 (en) * | 2005-07-28 | 2007-02-01 | Felkner I C | Tetrasilver Tetraoxide as Disinfective Agent for Cryptosporidium |
US20070138109A1 (en) * | 2005-12-21 | 2007-06-21 | Tufano Thomas P | Oxidizing composition for salt water |
US7442323B2 (en) * | 2006-06-02 | 2008-10-28 | E. I. Du Pont De Nemours And Company | Potassium monopersulfate solutions |
JP2010541192A (ja) * | 2007-08-20 | 2010-12-24 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | イオン注入フォトレジストを除去するための組成物および方法 |
EP2288965A4 (en) * | 2008-05-01 | 2011-08-10 | Advanced Tech Materials | LOW PH MIXTURES FOR REMOVAL OF HIGH DENSITY IMPLANTED RESERVE |
TWI480360B (zh) * | 2009-04-03 | 2015-04-11 | Du Pont | 蝕刻劑組成物及方法 |
US20100252530A1 (en) * | 2009-04-03 | 2010-10-07 | E. I. Du Pont De Nemours And Company | Etchant composition and method |
JP5340071B2 (ja) * | 2009-08-03 | 2013-11-13 | 株式会社Adeka | 安定剤を含むペルオキシ一硫酸水溶液の製造方法 |
CN102260871A (zh) * | 2011-06-24 | 2011-11-30 | 李沛泓 | 印刷线路板微蚀刻剂 |
EP2572776A1 (en) * | 2011-09-21 | 2013-03-27 | Evonik Degussa GmbH | Device for mixing and cooling two reactive liquids and method of making peroxomonosulphuric acid with the device |
EP2572781A1 (en) | 2011-09-21 | 2013-03-27 | Evonik Degussa GmbH | Device and method for making a dilute aqueous solution of peroxomonosulphuric acid |
CN110172349B (zh) * | 2019-05-08 | 2020-11-20 | 厦门大学 | 一种氮化镓半导体光电化学刻蚀液及加工方法 |
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US20040197261A1 (en) | 2004-10-07 |
CN1768005A (zh) | 2006-05-03 |
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