KR101063833B1 - 패터닝 방법 - Google Patents
패터닝 방법 Download PDFInfo
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- KR101063833B1 KR101063833B1 KR1020030051559A KR20030051559A KR101063833B1 KR 101063833 B1 KR101063833 B1 KR 101063833B1 KR 1020030051559 A KR1020030051559 A KR 1020030051559A KR 20030051559 A KR20030051559 A KR 20030051559A KR 101063833 B1 KR101063833 B1 KR 101063833B1
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- 238000000059 patterning Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 97
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000011344 liquid material Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 63
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009736 wetting Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 18
- 239000000243 solution Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000007900 aqueous suspension Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 244000027321 Lychnis chalcedonica Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012411 cloning technique Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/006—Patterns of chemical products used for a specific purpose, e.g. pesticides, perfumes, adhesive patterns; use of microencapsulated material; Printing on smoking articles
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0108—Male die used for patterning, punching or transferring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (32)
- 기판의 표면에 오목부 구역(indent region)을 형성하는 단계 및 상기 표면상의 액체 재료의 확산이 오목부 구역에 의해 제어되도록 선택된 위치에서 상기 표면상에 상기 재료를 퇴적하는 단계를 포함하고,상기 오목부 구역은 상기 표면상의 상기 재료의 확산을 더 제어하기 위해 복수의 장벽을 제공하는 성곽(城郭) 모양(castellated) 또는 톱니 모양의 종단면(cross-sectional profile)을 가지고 형성되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항에 있어서,상기 오목부 구역은 상기 기판에 침하(depression)를 제공함으로서 형성되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항에 있어서,상기 오목부 구역은 상기 기판에 상기 기판으로부터 연장되는 적어도 하나의 융기부를 제공함으로서 형성되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항에 있어서,상기 액체 재료는 잉크젯 인쇄 기술을 이용해 퇴적되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 오목부 구역은 상기 표면에 실질적으로 직각으로 연장되는 벽부로 형성 되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 오목부 구역은 상기 표면에 대해 기울기를 가진 벽부로 형성되는 것을 특징으로 하는 패터닝 방법.
- 제 6 항에 있어서,상기 벽부의 기울기는 상기 오목부 구역의 하면을 향해 점점 좁아지는 폭을 갖는 오목부 구역을 제공하도록 배치되는 것을 특징으로 하는 패터닝 방법.
- 제 6 항에 있어서,상기 벽부의 기울기는 상기 오목부 구역의 하면을 향해 점점 넓어지는 폭을 갖는 오목부 구역을 제공하도록 배치되는 것을 특징으로 하는 패터닝 방법.
- 삭제
- 삭제
- 삭제
- 기판의 표면에 가늘고 긴 모양(elongate shape)의 제 1 및 제 2의 오목부 구역을 제공하는 단계와, 상기 제 1 및 제 2의 오목부 구역 사이에 배치되지만 그들로부터 이격된 또 하나의 가늘고 긴 오목부 구역을 인압(impressing)하는 단계, 및 상기 표면상의 액체 재료의 확산이 오목부 구역에 의해 제어되도록 선택된 위치에서 상기 표면상에 상기 재료를 퇴적하는 단계를 포함하고,상기 또 하나의 오목부 구역은 평면의 하면을 갖고,상기 제 1 및 제 2의 오목부 구역은 복수의 장벽을 제공하는 성곽 모양 또는 톱니 모양의 종단면을 포함하도록 선택되는 것을 특징으로 하는 패터닝 방법.
- 제 12 항에 있어서,상기 재료는 반도체 재료를 포함하도록 선택되고, 상기 선택된 위치는 가늘고 긴 오목부 구역 사이의 표면을 포함하므로 상기 가늘고 긴 오목부 구역의 폭에 의해 결정되는 채널 길이 및 상기 가늘고 긴 오목부 구역의 길이에 의해 결정되는 채널 폭을 갖는 박막 트랜지스터의 소스 및 드레인 구역을 제공하는 것을 특징으로 하는 패터닝 방법.
- 제 13 항에 있어서,상기 반도체 재료는 유기 반도체 재료를 포함하도록 선택되는 것을 특징으로 하는 패터닝 방법.
- 삭제
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,두개의 병렬로 가늘고 긴 오목부 구역을 제공하는 단계를 포함하고, 상기 재료는 도전성 재료를 포함하도록 선택되고, 상기 선택된 위치는 상기 가늘고 긴 오목부 구역 사이의 표면을 포함함으로서, 전기적으로 도전성 전극을 제공하는 것을 특징으로 하는 패터닝 방법.
- 제 16 항에 있어서,상기 도전성 재료는 도전성 중합체 재료를 포함하도록 선택되는 것을 특징으로 하는 패터닝 방법.
- 제 16 항에 있어서,상기 도전성 재료는 용매 내에서 금속 입자의 콜로이드 현탁액(colloidal suspension)을 포함하도록 선택되는 것을 특징으로 하는 패터닝 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,퇴적되는 상기 재료에 대해 기판 표면의 습윤 특성을 조정하는 단계를 포함하는 것을 특징으로 하는 패터닝 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 오목부 구역 또는 구역들은 인압 기술을 이용해 제공되는 것을 특징으로 하는 패터닝 방법.
- 제 20 항에 있어서,상기 표면은 스탬핑 다이를 이용해 인압되는 것을 특징으로 하는 패터닝 방법.
- 제 20 항에 있어서,상기 표면은 몰딩 기술을 이용해 인압되는 것을 특징으로 하는 패터닝 방법.
- 제 20 항에 있어서,상기 표면을 가열하는 단계를 포함하는 것을 특징으로 하는 패터닝 방법.
- 제 1 항에 있어서,상기 액체 재료는 폴리-3-4-에틸렌디옥시티오펜(ethylenedioxythiophene)인 것을 특징으로 하는 패터닝 방법.
- 제 24 항에 있어서,상기 기판의 표면에 알루미늄 코팅을 제공하고 상기 알루미늄 코팅에 상기 액체 재료를 퇴적하는 단계를 포함하는 것을 특징으로 하는 패터닝 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 전자 장치의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 전기광학 장치의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 도전성 상호접속(conductive interconnect)의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 컬러 필터의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 인쇄회로 기판의 제조 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 의한 방법을 이용하는 것을 특징으로 하는 DNA 어레이 마이크로 칩의 제공 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0217425A GB2391385A (en) | 2002-07-26 | 2002-07-26 | Patterning method by forming indent region to control spreading of liquid material deposited onto substrate |
GB0217425.8 | 2002-07-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040010404A KR20040010404A (ko) | 2004-01-31 |
KR101063833B1 true KR101063833B1 (ko) | 2011-09-08 |
Family
ID=9941215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030051559A KR101063833B1 (ko) | 2002-07-26 | 2003-07-25 | 패터닝 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7115507B2 (ko) |
EP (1) | EP1385364A3 (ko) |
JP (1) | JP4917735B2 (ko) |
KR (1) | KR101063833B1 (ko) |
CN (1) | CN100418184C (ko) |
GB (1) | GB2391385A (ko) |
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- 2003-07-22 US US10/623,495 patent/US7115507B2/en not_active Expired - Lifetime
- 2003-07-23 TW TW092120129A patent/TWI299197B/zh not_active IP Right Cessation
- 2003-07-25 KR KR1020030051559A patent/KR101063833B1/ko active IP Right Grant
- 2003-07-28 CN CNB031436463A patent/CN100418184C/zh not_active Expired - Lifetime
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Publication number | Publication date |
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TWI299197B (en) | 2008-07-21 |
KR20040010404A (ko) | 2004-01-31 |
TW200403771A (en) | 2004-03-01 |
GB2391385A (en) | 2004-02-04 |
CN1476049A (zh) | 2004-02-18 |
EP1385364A3 (en) | 2005-03-02 |
US7115507B2 (en) | 2006-10-03 |
JP4917735B2 (ja) | 2012-04-18 |
US20050176242A1 (en) | 2005-08-11 |
GB0217425D0 (en) | 2002-09-04 |
JP2004141856A (ja) | 2004-05-20 |
CN100418184C (zh) | 2008-09-10 |
EP1385364A2 (en) | 2004-01-28 |
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