KR101043009B1 - 실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치 - Google Patents

실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치 Download PDF

Info

Publication number
KR101043009B1
KR101043009B1 KR1020097009409A KR20097009409A KR101043009B1 KR 101043009 B1 KR101043009 B1 KR 101043009B1 KR 1020097009409 A KR1020097009409 A KR 1020097009409A KR 20097009409 A KR20097009409 A KR 20097009409A KR 101043009 B1 KR101043009 B1 KR 101043009B1
Authority
KR
South Korea
Prior art keywords
plasma
substrate
silicon
generation chamber
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097009409A
Other languages
English (en)
Korean (ko)
Other versions
KR20090086407A (ko
Inventor
아츠시 도묘
히로카즈 가키
에이지 다카하시
Original Assignee
닛신덴키 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛신덴키 가부시키 가이샤 filed Critical 닛신덴키 가부시키 가이샤
Publication of KR20090086407A publication Critical patent/KR20090086407A/ko
Application granted granted Critical
Publication of KR101043009B1 publication Critical patent/KR101043009B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/586—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020097009409A 2006-11-08 2007-10-29 실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치 Expired - Fee Related KR101043009B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-303153 2006-11-08
JP2006303153A JP4997925B2 (ja) 2006-11-08 2006-11-08 シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置

Publications (2)

Publication Number Publication Date
KR20090086407A KR20090086407A (ko) 2009-08-12
KR101043009B1 true KR101043009B1 (ko) 2011-06-21

Family

ID=39364376

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097009409A Expired - Fee Related KR101043009B1 (ko) 2006-11-08 2007-10-29 실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치

Country Status (5)

Country Link
US (1) US20120211351A1 (enExample)
JP (1) JP4997925B2 (enExample)
KR (1) KR101043009B1 (enExample)
CN (1) CN101558472B (enExample)
WO (1) WO2008056556A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044569B (zh) * 2009-10-23 2013-09-11 中芯国际集成电路制造(上海)有限公司 电容器及其制造方法
CN102891134A (zh) * 2011-07-18 2013-01-23 中国科学院微电子研究所 一种基于mos电容的等离子体损伤测试结构
JP2015504479A (ja) * 2011-11-08 2015-02-12 トーソー エスエムディー，インク． 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法
WO2014148490A1 (ja) * 2013-03-22 2014-09-25 株式会社日立国際電気 基板処理装置、及び半導体装置の製造方法
JP6254036B2 (ja) * 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
JP6541374B2 (ja) * 2014-07-24 2019-07-10 東京エレクトロン株式会社 基板処理装置
US10096495B2 (en) 2014-12-26 2018-10-09 Tokyo Electron Limited Substrate processing apparatus
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
DE102020117347A1 (de) 2020-07-01 2022-01-05 VON ARDENNE Asset GmbH & Co. KG Magnetronanordnung
KR102795097B1 (ko) * 2023-07-31 2025-04-15 오스 주식회사 단일 챔버형 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102783296B1 (ko) * 2023-07-31 2025-03-19 오스 주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000192245A (ja) 1992-10-16 2000-07-11 Canon Inc マイクロ波プラズマｃｖｄ法による堆積膜形成方法
JP2002008983A (ja) 2000-06-16 2002-01-11 Hitachi Cable Ltd 化合物半導体ウェハの製造方法
KR100582013B1 (ko) 2002-04-24 2006-05-22 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 윈도우 타입 프로브, 플라즈마 감시장치, 및, 플라즈마처리장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03170667A (ja) * 1989-11-29 1991-07-24 Shimadzu Corp スパッタリング装置
JP3197557B2 (ja) * 1990-11-27 2001-08-13 株式会社半導体エネルギー研究所 被膜形成方法
JPH09102596A (ja) * 1995-10-04 1997-04-15 Fujitsu Ltd 量子ドットの製造方法及び量子ドット装置
JPH10140342A (ja) * 1996-11-05 1998-05-26 Canon Inc スパッタ装置及びその装置による基板の成膜方法
JPH11271553A (ja) * 1998-03-23 1999-10-08 Hitachi Cable Ltd 光導波路用ガラス膜の形成方法及びその装置
JP3812232B2 (ja) * 1998-10-23 2006-08-23 日新電機株式会社 多結晶シリコン薄膜形成方法及び薄膜形成装置
WO2002020864A2 (en) * 2000-06-16 2002-03-14 Applied Materials, Inc. System and method for depositing high dielectric constant materials and compatible conductive materials
JP2003201562A (ja) * 2002-01-11 2003-07-18 Nippon Telegr & Teleph Corp <Ntt> 成膜モニタリング方法
US20040129223A1 (en) * 2002-12-24 2004-07-08 Park Jong Hyurk Apparatus and method for manufacturing silicon nanodot film for light emission
JP2006176859A (ja) * 2004-12-24 2006-07-06 Canon Anelva Corp シリコンナノ結晶構造体の作製方法
JP2006286536A (ja) * 2005-04-04 2006-10-19 Ebara Corp プラズマ生成方法、誘導結合型プラズマ源、およびプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000192245A (ja) 1992-10-16 2000-07-11 Canon Inc マイクロ波プラズマｃｖｄ法による堆積膜形成方法
JP2002008983A (ja) 2000-06-16 2002-01-11 Hitachi Cable Ltd 化合物半導体ウェハの製造方法
KR100582013B1 (ko) 2002-04-24 2006-05-22 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 윈도우 타입 프로브, 플라즈마 감시장치, 및, 플라즈마처리장치

Also Published As

Publication number Publication date
JP2008124078A (ja) 2008-05-29
CN101558472B (zh) 2011-06-08
WO2008056556A1 (en) 2008-05-15
US20120211351A1 (en) 2012-08-23
CN101558472A (zh) 2009-10-14
KR20090086407A (ko) 2009-08-12
JP4997925B2 (ja) 2012-08-15

Similar Documents

Publication Publication Date Title
KR101043009B1 (ko) 실리콘 도트 형성방법 및 장치 및 실리콘 도트 및 절연막부착 기판의 형성방법 및 장치
US10837122B2 (en) Method and apparatus for precleaning a substrate surface prior to epitaxial growth
KR100932815B1 (ko) 저온 폴리-실리콘 박막 트랜지스터를 위한 다층 고품질게이트 유전체
JP4255563B2 (ja) 半導体製造方法及び半導体製造装置
TWI244108B (en) Substrate processing apparatus
US20120220116A1 (en) Dry Chemical Cleaning For Semiconductor Processing
WO2006030895A1 (ja) プラズマ処理装置およびプラズマ処理方法
TWI842772B (zh) 用於形成過渡金屬材料的群集處理系統
US20050227500A1 (en) Method for producing material of electronic device
TW202111810A (zh) 擋門機構及基板處理裝置
KR20000062563A (ko) 원자 가스로 재료층을 형성하기 위한 방법 및 장치
JP4434115B2 (ja) 結晶性シリコン薄膜の形成方法及び装置
US20090209095A1 (en) Manufacturing Method for Semiconductor Devices and Substrate Processing Apparatus
JP4730034B2 (ja) シリコンドット付き基板の形成方法
KR20090129954A (ko) 반도체 디바이스의 제조 방법 및 기판 처리 장치
JP4497068B2 (ja) シリコンドット形成方法及びシリコンドット形成装置
KR101464867B1 (ko) 반도체 장치 제조 방법, 기판 처리 장치 및 기록 매체
US20090233429A1 (en) Semiconductor device manufacturing method and substrate processing apparatus
US20090233430A1 (en) Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, and semiconductor device manufacturing system
JP4850861B2 (ja) 絶縁膜形成方法、絶縁膜形成装置及びプラズマ処理ユニット
JPH05259153A (ja) シリコン酸化膜の製造方法と製造装置
CN101842876A (zh) 硅点形成方法
JP2005057163A (ja) 半導体装置の製造方法
JP2008182194A (ja) 半導体装置の製造方法
JP2010147417A (ja) 半導体装置の製造方法および基板処理装置

Legal Events

Date Code Title Description
A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140615

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140615

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000