CN101558472B - 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 - Google Patents

硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 Download PDF

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CN101558472B
CN101558472B CN2007800416265A CN200780041626A CN101558472B CN 101558472 B CN101558472 B CN 101558472B CN 2007800416265 A CN2007800416265 A CN 2007800416265A CN 200780041626 A CN200780041626 A CN 200780041626A CN 101558472 B CN101558472 B CN 101558472B
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plasma
substrate
generation chamber
silicon
forming
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CN101558472A (zh
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东名敦志
可贵裕和
高桥英治
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Nissin Electric Co Ltd
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    • H—ELECTRICITY
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • Chemical Vapour Deposition (AREA)
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2007800416265A 2006-11-08 2007-10-29 硅点形成方法及装置以及带硅点和绝缘膜的基板的形成方法及装置 Expired - Fee Related CN101558472B (zh)

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JP303153/2006 2006-11-08
JP2006303153A JP4997925B2 (ja) 2006-11-08 2006-11-08 シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置
PCT/JP2007/070992 WO2008056556A1 (en) 2006-11-08 2007-10-29 Method and device for forming silicon dot and silicon dot and method and device for forming substrate with insulating film

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CN101558472A CN101558472A (zh) 2009-10-14
CN101558472B true CN101558472B (zh) 2011-06-08

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CN102044569B (zh) * 2009-10-23 2013-09-11 中芯国际集成电路制造(上海)有限公司 电容器及其制造方法
CN102891134A (zh) * 2011-07-18 2013-01-23 中国科学院微电子研究所 一种基于mos电容的等离子体损伤测试结构
JP2015504479A (ja) * 2011-11-08 2015-02-12 トーソー エスエムディー，インク． 特別な表面処理及び優れた粒子性能を有するシリコンスパッターターゲット及びその製造方法
WO2014148490A1 (ja) * 2013-03-22 2014-09-25 株式会社日立国際電気 基板処理装置、及び半導体装置の製造方法
JP6254036B2 (ja) * 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
JP6541374B2 (ja) * 2014-07-24 2019-07-10 東京エレクトロン株式会社 基板処理装置
US10096495B2 (en) 2014-12-26 2018-10-09 Tokyo Electron Limited Substrate processing apparatus
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
DE102020117347A1 (de) 2020-07-01 2022-01-05 VON ARDENNE Asset GmbH & Co. KG Magnetronanordnung
KR102795097B1 (ko) * 2023-07-31 2025-04-15 오스 주식회사 단일 챔버형 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102783296B1 (ko) * 2023-07-31 2025-03-19 오스 주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법

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JP2008124078A (ja) 2008-05-29
WO2008056556A1 (en) 2008-05-15
US20120211351A1 (en) 2012-08-23
CN101558472A (zh) 2009-10-14
KR20090086407A (ko) 2009-08-12
JP4997925B2 (ja) 2012-08-15
KR101043009B1 (ko) 2011-06-21

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