KR101011172B1 - 면발광 레이저 소자, 면발광 레이저 어레이, 광주사 장치 및 화상 형성 장치 - Google Patents

면발광 레이저 소자, 면발광 레이저 어레이, 광주사 장치 및 화상 형성 장치 Download PDF

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KR101011172B1
KR101011172B1 KR1020090050048A KR20090050048A KR101011172B1 KR 101011172 B1 KR101011172 B1 KR 101011172B1 KR 1020090050048 A KR1020090050048 A KR 1020090050048A KR 20090050048 A KR20090050048 A KR 20090050048A KR 101011172 B1 KR101011172 B1 KR 101011172B1
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emitting laser
surface emitting
substrate
light
light beam
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KR20090127102A (ko
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아키히로 이토
슈니치 사토
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가부시키가이샤 리코
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/12—Scanning systems using multifaceted mirrors
    • G02B26/123—Multibeam scanners, e.g. using multiple light sources or beam splitters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/04—Apparatus for electrographic processes using a charge pattern for exposing, i.e. imagewise exposure by optically projecting the original image on a photoconductive recording material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
KR1020090050048A 2008-06-05 2009-06-05 면발광 레이저 소자, 면발광 레이저 어레이, 광주사 장치 및 화상 형성 장치 Expired - Fee Related KR101011172B1 (ko)

Applications Claiming Priority (2)

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JP2008148008A JP2009295792A (ja) 2008-06-05 2008-06-05 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JPJP-P-2008-148008 2008-06-05

Publications (2)

Publication Number Publication Date
KR20090127102A KR20090127102A (ko) 2009-12-09
KR101011172B1 true KR101011172B1 (ko) 2011-01-26

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US (1) US8421837B2 (enExample)
EP (1) EP2131459B1 (enExample)
JP (1) JP2009295792A (enExample)
KR (1) KR101011172B1 (enExample)
CN (1) CN101640377A (enExample)
TW (1) TWI403051B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5515767B2 (ja) 2009-05-28 2014-06-11 株式会社リコー 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011018876A (ja) * 2009-06-09 2011-01-27 Ricoh Co Ltd 面発光レーザ素子の製造方法、光走査装置、画像形成装置及び酸化装置
JP5510899B2 (ja) 2009-09-18 2014-06-04 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、及び画像形成装置
WO2011059833A2 (en) * 2009-10-29 2011-05-19 California Institute Of Technology Dual-mode raster point scanning/light sheet illumination microscope
JP5532321B2 (ja) * 2009-11-17 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5527714B2 (ja) * 2009-11-18 2014-06-25 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5522595B2 (ja) * 2009-11-27 2014-06-18 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011151357A (ja) * 2009-12-21 2011-08-04 Ricoh Co Ltd 光デバイス、光走査装置及び画像形成装置
JP2011166108A (ja) * 2010-01-15 2011-08-25 Ricoh Co Ltd 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5923861B2 (ja) * 2010-03-18 2016-05-25 株式会社リコー 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置
JP5834414B2 (ja) * 2010-03-18 2015-12-24 株式会社リコー 面発光レーザモジュール、光走査装置及び画像形成装置
JP5585940B2 (ja) 2010-04-22 2014-09-10 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP5754624B2 (ja) 2010-05-25 2015-07-29 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP5721055B2 (ja) 2010-06-11 2015-05-20 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP2012209534A (ja) 2011-03-17 2012-10-25 Ricoh Co Ltd 面発光レーザ素子、原子発振器及び面発光レーザ素子の検査方法
JP5929259B2 (ja) 2011-05-17 2016-06-01 株式会社リコー 面発光レーザ素子、光走査装置及び画像形成装置
JP6303255B2 (ja) 2011-12-02 2018-04-04 株式会社リコー 面発光レーザ素子及び原子発振器
JP6102525B2 (ja) 2012-07-23 2017-03-29 株式会社リコー 面発光レーザ素子及び原子発振器
JP6107089B2 (ja) 2012-11-30 2017-04-05 株式会社リコー 面発光レーザ素子及び原子発振器
JP2014139599A (ja) * 2013-01-21 2014-07-31 Ricoh Co Ltd 光デバイス、光走査装置及び画像形成装置
US9097633B2 (en) * 2013-03-15 2015-08-04 Consolidated Nuclear Security, LLC Reactor cell assembly for use in spectroscopy and microscopy applications
JP6593770B2 (ja) * 2015-07-07 2019-10-23 株式会社リコー 面発光レーザ、面発光レーザアレイ、レーザ装置、点火装置、及び内燃機関
JP2017059825A (ja) 2015-09-15 2017-03-23 パナソニックＩｐマネジメント株式会社 半導体光源駆動装置、及び投写型映像表示装置
US11283240B2 (en) * 2018-01-09 2022-03-22 Oepic Semiconductors, Inc. Pillar confined backside emitting VCSEL
US11233377B2 (en) * 2018-01-26 2022-01-25 Oepic Semiconductors Inc. Planarization of backside emitting VCSEL and method of manufacturing the same for array application
JP7087684B2 (ja) 2018-05-31 2022-06-21 住友電気工業株式会社 垂直共振型面発光レーザ
US12470046B2 (en) 2021-07-27 2025-11-11 Sumitomo Electric Industries, Ltd. Vertical cavity surface-emitting laser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264884A (ja) * 1995-03-24 1996-10-11 Shimadzu Corp 利得導波型半導体レーザ
JP2003324233A (ja) 2002-04-26 2003-11-14 Fuji Xerox Co Ltd 表面発光型半導体レーザ素子およびその製造方法
KR20040025234A (ko) * 2002-09-18 2004-03-24 주식회사 레이칸 고출력 단일모드 표면방출 레이저 소자 및 제조 방법
JP2008085301A (ja) 2006-08-30 2008-04-10 Ricoh Co Ltd 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US654528A (en) * 1899-12-09 1900-07-24 Kanute Arvid Enlind Non-slipping pneumatic tire.
US5331654A (en) 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
JP3713725B2 (ja) 1994-09-28 2005-11-09 富士ゼロックス株式会社 半導体レーザ装置、その製造方法およびその駆動方法
US5727014A (en) 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
JP3799667B2 (ja) 1996-07-10 2006-07-19 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
JP3677883B2 (ja) 1996-08-21 2005-08-03 富士ゼロックス株式会社 面発光型半導体レーザ素子、面発光型半導体レーザアレイ、面発光型半導体レーザビームスキャナ、面発光レーザビーム記録装置およびレーザ記録方法
US6233264B1 (en) 1996-08-27 2001-05-15 Ricoh Company, Ltd. Optical semiconductor device having an active layer containing N
JP3449516B2 (ja) 1996-08-30 2003-09-22 株式会社リコー 半導体多層膜反射鏡および半導体多層膜反射防止膜および面発光型半導体レーザおよび受光素子
JP3467153B2 (ja) 1996-08-30 2003-11-17 株式会社リコー 半導体素子
JP3788831B2 (ja) 1996-08-30 2006-06-21 株式会社リコー 半導体素子およびその製造方法
US6072196A (en) 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
US6304588B1 (en) 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
JPH11307882A (ja) 1998-02-17 1999-11-05 Fuji Xerox Co Ltd 面発光型半導体レ―ザ、面発光型半導体レ―ザアレイ、及び面発光型半導体レ―ザの製造方法
US6563851B1 (en) 1998-04-13 2003-05-13 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
US6207973B1 (en) 1998-08-19 2001-03-27 Ricoh Company, Ltd. Light emitting devices with layered III-V semiconductor structures
US6542528B1 (en) 1999-02-15 2003-04-01 Ricoh Company, Ltd. Light-emitting semiconductor device producing red wavelength optical radiation
US6614821B1 (en) 1999-08-04 2003-09-02 Ricoh Company, Ltd. Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
US6975663B2 (en) 2001-02-26 2005-12-13 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode
JP3770305B2 (ja) * 2000-03-29 2006-04-26 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
US6674785B2 (en) 2000-09-21 2004-01-06 Ricoh Company, Ltd. Vertical-cavity, surface-emission type laser diode and fabrication process thereof
JP2002164621A (ja) * 2000-11-28 2002-06-07 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子
US6803604B2 (en) 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
US6765232B2 (en) 2001-03-27 2004-07-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP4537658B2 (ja) 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
FR2837024B1 (fr) * 2002-03-06 2007-04-27 Air Liquide Pile a combustible, cellule ou groupe de cellules appartenant a une telle pile, kit de remplacement pour cette cellule et son procede de fabrication
JP3885677B2 (ja) 2002-07-10 2007-02-21 富士ゼロックス株式会社 面発光型半導体レーザ及びその製造方法ならびにその製造装置
US6927412B2 (en) 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
KR100487224B1 (ko) 2002-12-18 2005-05-03 삼성전자주식회사 수직공동 표면방사 레이저 및 그 제조방법
EP1496583B1 (en) 2003-07-07 2016-05-18 II-VI Laser Enterprise GmbH A vertical cavity surface emitting laser having improved transverse mode control and a method of forming the same
US7684458B2 (en) 2004-06-11 2010-03-23 Ricoh Company, Ltd. Surface-emission laser diode and fabrication process thereof
US7981700B2 (en) 2005-02-15 2011-07-19 Ricoh Company, Ltd. Semiconductor oxidation apparatus and method of producing semiconductor element
JP2007142375A (ja) * 2005-10-20 2007-06-07 Furukawa Electric Co Ltd:The 面発光レーザ素子及びその製造方法
JP5194432B2 (ja) 2005-11-30 2013-05-08 株式会社リコー 面発光レーザ素子
US7693204B2 (en) 2006-02-03 2010-04-06 Ricoh Company, Ltd. Surface-emitting laser device and surface-emitting laser array including same
US7800805B2 (en) 2006-07-24 2010-09-21 Ricoh Company, Limited Optical Scanning apparatus and image forming apparatus
JP2008060322A (ja) 2006-08-31 2008-03-13 Ricoh Co Ltd 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム
JP2008064801A (ja) 2006-09-04 2008-03-21 Ricoh Co Ltd 光走査装置及び画像形成装置
JP2008148008A (ja) 2006-12-11 2008-06-26 Renesas Technology Corp 基板制御回路、半導体集積回路及び基板制御方法
JP5316783B2 (ja) * 2008-05-15 2013-10-16 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264884A (ja) * 1995-03-24 1996-10-11 Shimadzu Corp 利得導波型半導体レーザ
JP2003324233A (ja) 2002-04-26 2003-11-14 Fuji Xerox Co Ltd 表面発光型半導体レーザ素子およびその製造方法
KR20040025234A (ko) * 2002-09-18 2004-03-24 주식회사 레이칸 고출력 단일모드 표면방출 레이저 소자 및 제조 방법
JP2008085301A (ja) 2006-08-30 2008-04-10 Ricoh Co Ltd 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置

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US8421837B2 (en) 2013-04-16
CN101640377A (zh) 2010-02-03
TWI403051B (zh) 2013-07-21
EP2131459A3 (en) 2011-02-09
EP2131459A2 (en) 2009-12-09
US20090303308A1 (en) 2009-12-10
JP2009295792A (ja) 2009-12-17
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