JP5527714B2 - 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 - Google Patents
面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 Download PDFInfo
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- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
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Description
Claims (18)
- 活性層を含む共振器構造体と、該共振器構造体を挟んで設けられた半導体多層膜反射鏡と、光が射出される射出面上に、射出領域を取り囲んで設けられた電極とを備える面発光レーザ素子において、
前記射出領域の中心部から外れた少なくとも1つの領域に形成され、反射率を前記中心部の反射率よりも低くする誘電体膜を備え、
光の射出方向からみたときに、前記電極の一部が前記誘電体膜の一部を覆っていることを特徴とする面発光レーザ素子。 - 前記誘電体膜は、互いに直交する2つの方向で形状異方性を有することを特徴とする請求項1に記載の面発光レーザ素子。
- 前記少なくとも1つの小領域は複数の小領域であり、
該複数の小領域は、光の射出方向からみたときに、前記射出領域の中心部を挟んで対向していることを特徴とする請求項2に記載の面発光レーザ素子。 - 前記射出領域の中心部を挟んで対向している複数の小領域は、円環状を2つに分断した形状を含むことを特徴とする請求項3に記載の面発光レーザ素子。
- 前記共振器構造体及び前記半導体多層膜反射鏡は、傾斜基板上に結晶成長して形成され、
前記射出領域の中心部を挟んで対向する方向は、前記傾斜基板の傾斜方向に直交する方向であり、前記射出領域の中心部を挟んで対向する方向と偏光方向とが一致していることを特徴とする請求項3又は4に記載の面発光レーザ素子。 - 前記誘電体膜の光学的厚さは、「発振波長/4」の奇数倍であることを特徴とする請求項1〜5のいずれか一項に記載の面発光レーザ素子。
- 前記誘電体膜は、SiNx、SiOx、TiOx及びSiONのいずれかの膜であることを特徴とする請求項1〜6のいずれか一項に記載の面発光レーザ素子。
- 前記射出領域における相対的に反射率が高い領域は、誘電体膜で被覆され、該誘電体膜の光学的厚さは、「発振波長/4」の偶数倍であることを特徴とする請求項1〜7のいずれか一項に記載の面発光レーザ素子。
- 光の射出方向からみたときに、前記電極は、その一部が前記射出領域における相対的に反射率が高い領域を被覆している誘電体膜の一部と重なっていることを特徴とする請求項8に記載の面発光レーザ素子。
- 前記射出領域における相対的に反射率が高い領域を被覆している誘電体膜は、前記少なくとも1つの小領域に形成された誘電体膜と同じ材質であることを特徴とする請求項8又は9に記載の面発光レーザ素子。
- 前記射出領域における相対的に反射率が高い領域を被覆している誘電体膜は、互いに屈折率の異なる複数の膜が積層された誘電体膜であることを特徴とする請求項8又は9に記載の面発光レーザ素子。
- 前記複数の膜における各膜の光学的厚さは、それぞれ「発振波長/4」の奇数倍であることを特徴とする請求項11に記載の面発光レーザ素子。
- 前記射出領域は、メサ構造体の上面に設けられ、
前記射出領域の全面及び前記メサ構造体の全側面は誘電体膜で覆われ、
前記メサ構造体の上面は、前記射出領域の全面を覆う誘電体膜と前記電極とにより、露出することなく完全に覆われていることを特徴とする請求項1〜12のいずれか一項に記載の面発光レーザ素子。 - 請求項1〜13のいずれか一項に記載の面発光レーザ素子が集積された面発光レーザアレイ。
- 光によって被走査面を走査する光走査装置であって、
請求項1〜13のいずれか一項に記載の面発光レーザ素子を有する光源と;
前記光源からの光を偏向する偏向器と;
前記偏向器で偏向された光を前記被走査面上に集光する走査光学系と;を備える光走査装置。 - 光によって被走査面を走査する光走査装置であって、
請求項14に記載の面発光レーザアレイを有する光源と;
前記光源からの光を偏向する偏向器と;
前記偏向器で偏向された光を前記被走査面上に集光する走査光学系と;を備える光走査装置。 - 少なくとも1つの像担持体と;
前記少なくとも1つの像担持体に対して画像情報に応じて変調された光を走査する少なくとも1つの請求項15又は16に記載の光走査装置と;を備える画像形成装置。 - 前記画像情報は、多色のカラー画像情報であることを特徴とする請求項17に記載の画像形成装置。
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JP2010167735A JP5527714B2 (ja) | 2009-11-18 | 2010-07-27 | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
US12/917,080 US8711891B2 (en) | 2009-11-18 | 2010-11-01 | Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus |
EP10190741A EP2325957A3 (en) | 2009-11-18 | 2010-11-10 | Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3838218B2 (ja) | 2003-05-19 | 2006-10-25 | ソニー株式会社 | 面発光型半導体レーザ素子及びその製造方法 |
JP5515767B2 (ja) * | 2009-05-28 | 2014-06-11 | 株式会社リコー | 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5522595B2 (ja) * | 2009-11-27 | 2014-06-18 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP2012209534A (ja) | 2011-03-17 | 2012-10-25 | Ricoh Co Ltd | 面発光レーザ素子、原子発振器及び面発光レーザ素子の検査方法 |
JP5929259B2 (ja) | 2011-05-17 | 2016-06-01 | 株式会社リコー | 面発光レーザ素子、光走査装置及び画像形成装置 |
EP2533380B8 (en) * | 2011-06-06 | 2017-08-30 | Mellanox Technologies, Ltd. | High speed lasing device |
JP5929057B2 (ja) * | 2011-09-09 | 2016-06-01 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP6303255B2 (ja) | 2011-12-02 | 2018-04-04 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
DE102012207003A1 (de) * | 2012-04-27 | 2013-10-31 | Carl Zeiss Smt Gmbh | Optische Elemente mit magnetostriktivem Material |
JP6107089B2 (ja) | 2012-11-30 | 2017-04-05 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
CN103390858A (zh) * | 2013-07-23 | 2013-11-13 | 中国科学院长春光学精密机械与物理研究所 | 一种垂直腔面发射半导体激光器 |
JP2015119137A (ja) * | 2013-12-20 | 2015-06-25 | セイコーエプソン株式会社 | 面発光レーザーおよび原子発振器 |
US9739876B2 (en) | 2015-04-13 | 2017-08-22 | The Boeing Company | Methods and apparatus to determine relative positioning between moving platforms |
JP2017157742A (ja) * | 2016-03-03 | 2017-09-07 | 株式会社リコー | レーザー光発生装置 |
JP2017204577A (ja) * | 2016-05-12 | 2017-11-16 | スタンレー電気株式会社 | 面発光レーザ装置 |
JP7077500B2 (ja) * | 2017-01-12 | 2022-05-31 | ローム株式会社 | 面発光レーザ素子、光学装置 |
US11637227B2 (en) | 2017-01-25 | 2023-04-25 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device including multiple distributed bragg reflector layers |
JP2019033211A (ja) * | 2017-08-09 | 2019-02-28 | 住友電気工業株式会社 | 面発光レーザ |
US10761554B2 (en) * | 2017-09-04 | 2020-09-01 | Excalibur Almaz Usa, Inc. | Propulsive devices that comprise selectively reflective epitaxial surfaces |
CN108847573B (zh) * | 2018-06-27 | 2021-06-01 | 湖北光安伦芯片有限公司 | 垂直腔面发射激光器及其制作方法 |
US11121299B2 (en) * | 2018-10-31 | 2021-09-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
DE102022109448A1 (de) * | 2022-04-19 | 2023-10-19 | Trumpf Photonic Components Gmbh | Halbleiterbauteil |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5172385A (en) * | 1991-03-05 | 1992-12-15 | University Of Southern California | Polarization-selective integrated optoelectronic devices incorporating crystalline organic thin films |
US5940422A (en) | 1996-06-28 | 1999-08-17 | Honeywell Inc. | Laser with an improved mode control |
US6233264B1 (en) | 1996-08-27 | 2001-05-15 | Ricoh Company, Ltd. | Optical semiconductor device having an active layer containing N |
JP3467153B2 (ja) | 1996-08-30 | 2003-11-17 | 株式会社リコー | 半導体素子 |
JP3788831B2 (ja) | 1996-08-30 | 2006-06-21 | 株式会社リコー | 半導体素子およびその製造方法 |
JP3449516B2 (ja) | 1996-08-30 | 2003-09-22 | 株式会社リコー | 半導体多層膜反射鏡および半導体多層膜反射防止膜および面発光型半導体レーザおよび受光素子 |
US6072196A (en) | 1996-09-05 | 2000-06-06 | Ricoh Company, Ltd. | semiconductor light emitting devices |
US6563851B1 (en) | 1998-04-13 | 2003-05-13 | Ricoh Company, Ltd. | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band |
US6207973B1 (en) | 1998-08-19 | 2001-03-27 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures |
US6542528B1 (en) | 1999-02-15 | 2003-04-01 | Ricoh Company, Ltd. | Light-emitting semiconductor device producing red wavelength optical radiation |
US6614821B1 (en) | 1999-08-04 | 2003-09-02 | Ricoh Company, Ltd. | Laser diode and semiconductor light-emitting device producing visible-wavelength radiation |
JP2001060739A (ja) * | 1999-08-19 | 2001-03-06 | Nippon Telegr & Teleph Corp <Ntt> | 面発光レーザ装置 |
JP3566902B2 (ja) * | 1999-09-13 | 2004-09-15 | 古河電気工業株式会社 | 面発光半導体レーザ素子 |
EP1130720B1 (en) | 1999-09-13 | 2005-04-06 | The Furukawa Electric Co., Ltd. | Surface-emission semiconductor laser |
US6975663B2 (en) | 2001-02-26 | 2005-12-13 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode |
JP2002009393A (ja) | 2000-04-19 | 2002-01-11 | Fuji Xerox Co Ltd | 垂直共振器型面発光半導体レーザ装置及びその製造方法 |
US6674785B2 (en) | 2000-09-21 | 2004-01-06 | Ricoh Company, Ltd. | Vertical-cavity, surface-emission type laser diode and fabrication process thereof |
JP2002208755A (ja) | 2000-11-13 | 2002-07-26 | Fuji Xerox Co Ltd | 面発光型半導体レーザ |
US6529541B1 (en) | 2000-11-13 | 2003-03-04 | Fuji Xerox Co., Ltd. | Surface emitting semiconductor laser |
JP2008028424A (ja) | 2000-11-13 | 2008-02-07 | Fuji Xerox Co Ltd | 面発光型半導体レーザ |
US6803604B2 (en) | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
US6765232B2 (en) | 2001-03-27 | 2004-07-20 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
JP4537658B2 (ja) | 2002-02-22 | 2010-09-01 | 株式会社リコー | 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法 |
JP2004063707A (ja) * | 2002-07-29 | 2004-02-26 | Fuji Xerox Co Ltd | 表面発光型半導体レーザ |
US6927412B2 (en) | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
CA2556709A1 (en) * | 2004-02-25 | 2005-09-09 | Finisar Corporation | Methods for polarization control for vcsels |
EP1780849B1 (en) | 2004-06-11 | 2013-01-30 | Ricoh Company, Ltd. | Surface emitting laser diode and its manufacturing method |
US7981700B2 (en) | 2005-02-15 | 2011-07-19 | Ricoh Company, Ltd. | Semiconductor oxidation apparatus and method of producing semiconductor element |
JP4581848B2 (ja) | 2005-05-31 | 2010-11-17 | セイコーエプソン株式会社 | 光素子 |
JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
JP5194432B2 (ja) | 2005-11-30 | 2013-05-08 | 株式会社リコー | 面発光レーザ素子 |
US7693204B2 (en) | 2006-02-03 | 2010-04-06 | Ricoh Company, Ltd. | Surface-emitting laser device and surface-emitting laser array including same |
JP2007299896A (ja) | 2006-04-28 | 2007-11-15 | Ricoh Co Ltd | 面発光レーザ素子、それを備えた面発光レーザアレイおよびその面発光レーザアレイを備えた画像形成装置 |
WO2007126159A1 (en) | 2006-04-28 | 2007-11-08 | Ricoh Company, Ltd. | Surface-emission laser array, optical scanning apparatus and image forming apparatus |
JP5250999B2 (ja) * | 2006-06-08 | 2013-07-31 | ソニー株式会社 | 面発光型半導体レーザ |
US7800805B2 (en) | 2006-07-24 | 2010-09-21 | Ricoh Company, Limited | Optical Scanning apparatus and image forming apparatus |
EP2054980B1 (en) | 2006-08-23 | 2013-01-09 | Ricoh Company, Ltd. | Surface-emitting laser array, optical scanning device, and image forming device |
JP5309485B2 (ja) * | 2006-08-30 | 2013-10-09 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP2008060322A (ja) | 2006-08-31 | 2008-03-13 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム |
JP2008064801A (ja) | 2006-09-04 | 2008-03-21 | Ricoh Co Ltd | 光走査装置及び画像形成装置 |
JP5177399B2 (ja) | 2007-07-13 | 2013-04-03 | 株式会社リコー | 面発光レーザアレイ、光走査装置及び画像形成装置 |
US8077752B2 (en) | 2008-01-10 | 2011-12-13 | Sony Corporation | Vertical cavity surface emitting laser |
JP4582237B2 (ja) * | 2008-01-10 | 2010-11-17 | ソニー株式会社 | 面発光型半導体レーザ |
JP5408477B2 (ja) | 2008-05-13 | 2014-02-05 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5316783B2 (ja) | 2008-05-15 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP2009295792A (ja) | 2008-06-05 | 2009-12-17 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5316784B2 (ja) | 2008-06-11 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5261754B2 (ja) | 2008-11-27 | 2013-08-14 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5510899B2 (ja) | 2009-09-18 | 2014-06-04 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、及び画像形成装置 |
SG181077A1 (en) * | 2009-10-26 | 2012-07-30 | Discovery Life Ltd | A system and method of managing an insurance scheme |
JP5532321B2 (ja) * | 2009-11-17 | 2014-06-25 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5532239B2 (ja) | 2009-11-26 | 2014-06-25 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5522595B2 (ja) | 2009-11-27 | 2014-06-18 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
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