KR101005511B1 - 리소그래피 장치 및 리소그래피 장치 세정 방법 - Google Patents
리소그래피 장치 및 리소그래피 장치 세정 방법 Download PDFInfo
- Publication number
- KR101005511B1 KR101005511B1 KR1020080094789A KR20080094789A KR101005511B1 KR 101005511 B1 KR101005511 B1 KR 101005511B1 KR 1020080094789 A KR1020080094789 A KR 1020080094789A KR 20080094789 A KR20080094789 A KR 20080094789A KR 101005511 B1 KR101005511 B1 KR 101005511B1
- Authority
- KR
- South Korea
- Prior art keywords
- delete delete
- cleaning liquid
- substrate
- liquid
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96038507P | 2007-09-27 | 2007-09-27 | |
| US60/960,385 | 2007-09-27 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100089783A Division KR101059489B1 (ko) | 2007-09-27 | 2010-09-14 | 리소그래피 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090033130A KR20090033130A (ko) | 2009-04-01 |
| KR101005511B1 true KR101005511B1 (ko) | 2011-01-04 |
Family
ID=40517262
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080094789A Expired - Fee Related KR101005511B1 (ko) | 2007-09-27 | 2008-09-26 | 리소그래피 장치 및 리소그래피 장치 세정 방법 |
| KR1020100089783A Expired - Fee Related KR101059489B1 (ko) | 2007-09-27 | 2010-09-14 | 리소그래피 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100089783A Expired - Fee Related KR101059489B1 (ko) | 2007-09-27 | 2010-09-14 | 리소그래피 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8638421B2 (https=) |
| JP (2) | JP4939504B2 (https=) |
| KR (2) | KR101005511B1 (https=) |
| CN (2) | CN101398632B (https=) |
| NL (1) | NL1035942A1 (https=) |
| TW (1) | TWI426961B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP5029611B2 (ja) * | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US7866330B2 (en) | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US8011377B2 (en) | 2007-05-04 | 2011-09-06 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
| US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| NL1036273A1 (nl) * | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| NL1036709A1 (nl) | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| EP2131242A1 (en) * | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
| NL1036924A1 (nl) * | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Substrate table, lithographic apparatus and device manufacturing method. |
| US8454409B2 (en) * | 2009-09-10 | 2013-06-04 | Rave N.P., Inc. | CO2 nozzles |
| NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
| NL2005666A (en) | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| AU2010343143A1 (en) * | 2009-12-28 | 2012-06-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
| TW201432080A (zh) * | 2013-02-01 | 2014-08-16 | Chiuan Yan Technology Co Ltd | 負壓無塵型對位機構 |
| NL2018051A (en) * | 2016-02-08 | 2017-08-11 | Asml Netherlands Bv | Lithographic apparatus, method for unloading a substrate and method for loading a substrate |
| TWI751919B (zh) * | 2021-02-26 | 2022-01-01 | 印能科技股份有限公司 | 接觸式電軌高架搬運車(oht)集塵系統 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134999A (ja) * | 2004-11-04 | 2006-05-25 | Sony Corp | 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法 |
| WO2007060971A1 (ja) | 2005-11-22 | 2007-05-31 | Tokyo Ohka Kogyo Co., Ltd. | ホトリソグラフィ用洗浄液およびこれを用いた露光装置の洗浄方法 |
| JP2007150102A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
Family Cites Families (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| AU1175799A (en) * | 1997-11-21 | 1999-06-15 | Nikon Corporation | Projection aligner and projection exposure method |
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2000323396A (ja) | 1999-05-13 | 2000-11-24 | Canon Inc | 露光方法、露光装置、およびデイバイス製造方法 |
| SG135052A1 (en) * | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004050266A1 (ja) * | 2002-12-03 | 2004-06-17 | Nikon Corporation | 汚染物質除去方法及び装置、並びに露光方法及び装置 |
| JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| DE60323927D1 (de) * | 2002-12-13 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| EP1429189B1 (en) | 2002-12-13 | 2008-10-08 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101289959B1 (ko) * | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| JP2004327484A (ja) * | 2003-04-21 | 2004-11-18 | Canon Inc | ウエハチャック異物除去方法 |
| JP2005277363A (ja) | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| TWI474380B (zh) * | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2005072404A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 露光装置および半導体装置の製造方法 |
| JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| KR101301804B1 (ko) * | 2003-09-26 | 2013-08-29 | 가부시키가이샤 니콘 | 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법 |
| KR20060126949A (ko) * | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
| US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4579927B2 (ja) * | 2003-12-23 | 2010-11-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 浸漬リソグラフィのための除去可能なペリクル |
| US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7557900B2 (en) * | 2004-02-10 | 2009-07-07 | Nikon Corporation | Exposure apparatus, device manufacturing method, maintenance method, and exposure method |
| US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| KR101421915B1 (ko) | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8698998B2 (en) * | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
| DE102004033208B4 (de) * | 2004-07-09 | 2010-04-01 | Vistec Semiconductor Systems Gmbh | Vorrichtung zur Inspektion eines mikroskopischen Bauteils mit einem Immersionsobjektiv |
| US7307263B2 (en) * | 2004-07-14 | 2007-12-11 | Asml Netherlands B.V. | Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap |
| JP2006032750A (ja) * | 2004-07-20 | 2006-02-02 | Canon Inc | 液浸型投影露光装置、及びデバイス製造方法 |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| JP4772306B2 (ja) * | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
| US7385670B2 (en) * | 2004-10-05 | 2008-06-10 | Asml Netherlands B.V. | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus |
| WO2006041086A1 (ja) | 2004-10-13 | 2006-04-20 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| JP2006120674A (ja) * | 2004-10-19 | 2006-05-11 | Canon Inc | 露光装置及び方法、デバイス製造方法 |
| US20060081273A1 (en) * | 2004-10-20 | 2006-04-20 | Mcdermott Wayne T | Dense fluid compositions and processes using same for article treatment and residue removal |
| US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
| JP4784513B2 (ja) | 2004-12-06 | 2011-10-05 | 株式会社ニコン | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006310706A (ja) | 2005-05-02 | 2006-11-09 | Nikon Corp | 光学部品の洗浄方法、液浸投影露光装置および露光方法 |
| US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
| US7315033B1 (en) * | 2005-05-04 | 2008-01-01 | Advanced Micro Devices, Inc. | Method and apparatus for reducing biological contamination in an immersion lithography system |
| WO2006122578A1 (en) | 2005-05-17 | 2006-11-23 | Freescale Semiconductor, Inc. | Contaminant removal apparatus and method therefor |
| US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
| JP4522329B2 (ja) * | 2005-06-24 | 2010-08-11 | 株式会社Sokudo | 基板処理装置 |
| US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
| US7262422B2 (en) * | 2005-07-01 | 2007-08-28 | Spansion Llc | Use of supercritical fluid to dry wafer and clean lens in immersion lithography |
| DE102005031792A1 (de) | 2005-07-07 | 2007-01-11 | Carl Zeiss Smt Ag | Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür |
| JP2007029973A (ja) | 2005-07-25 | 2007-02-08 | Sony Corp | レーザ加工装置とその加工方法及びデブリ回収装置とその回収方法 |
| JP4641469B2 (ja) | 2005-09-06 | 2011-03-02 | キヤノン株式会社 | 画像形成装置、画像形成装置の制御方法、プログラム |
| JP2007088328A (ja) | 2005-09-26 | 2007-04-05 | Toshiba Corp | 液浸型露光装置の洗浄方法 |
| JP2007103658A (ja) * | 2005-10-04 | 2007-04-19 | Canon Inc | 露光方法および装置ならびにデバイス製造方法 |
| US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
| CN1963673A (zh) | 2005-11-11 | 2007-05-16 | 台湾积体电路制造股份有限公司 | 浸润式微影曝光设备及方法 |
| JP2007142217A (ja) | 2005-11-18 | 2007-06-07 | Taiwan Semiconductor Manufacturing Co Ltd | イマージョン式リソグラフィ露光装置およびその方法 |
| JP4654119B2 (ja) * | 2005-11-29 | 2011-03-16 | 東京エレクトロン株式会社 | 塗布・現像装置及び塗布・現像方法 |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7462850B2 (en) * | 2005-12-08 | 2008-12-09 | Asml Netherlands B.V. | Radical cleaning arrangement for a lithographic apparatus |
| US7405417B2 (en) * | 2005-12-20 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus having a monitoring device for detecting contamination |
| US7522263B2 (en) * | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US20070146658A1 (en) * | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
| JP4704221B2 (ja) * | 2006-01-26 | 2011-06-15 | 株式会社Sokudo | 基板処理装置および基板処理方法 |
| US20070182943A1 (en) * | 2006-02-06 | 2007-08-09 | Francis Goodwin | Debris apparatus, system, and method |
| JP2007227543A (ja) * | 2006-02-22 | 2007-09-06 | Toshiba Corp | 液浸光学装置、洗浄方法及び液浸露光方法 |
| JP2007227580A (ja) | 2006-02-23 | 2007-09-06 | Sony Corp | 液浸型露光装置および液浸型露光方法 |
| JP2007266074A (ja) * | 2006-03-27 | 2007-10-11 | Toshiba Corp | 半導体装置の製造方法及び液浸リソグラフィーシステム |
| US8027019B2 (en) * | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2007294817A (ja) * | 2006-04-27 | 2007-11-08 | Sokudo:Kk | 基板処理方法、基板処理システムおよび基板処理装置 |
| US7628865B2 (en) * | 2006-04-28 | 2009-12-08 | Asml Netherlands B.V. | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
| CN102298274A (zh) | 2006-05-18 | 2011-12-28 | 株式会社尼康 | 曝光方法及装置、维护方法、以及组件制造方法 |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| JP5019170B2 (ja) | 2006-05-23 | 2012-09-05 | 株式会社ニコン | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
| JP2007317987A (ja) * | 2006-05-29 | 2007-12-06 | Sokudo:Kk | 基板処理装置および基板処理方法 |
| CN101390194B (zh) | 2006-06-30 | 2011-04-20 | 株式会社尼康 | 维修方法、曝光方法及装置、以及元件制造方法 |
| JP5151981B2 (ja) | 2006-08-30 | 2013-02-27 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| JP5029611B2 (ja) * | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
| US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US9013672B2 (en) * | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US7916269B2 (en) * | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| US9019466B2 (en) * | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
-
2008
- 2008-09-16 NL NL1035942A patent/NL1035942A1/nl active Search and Examination
- 2008-09-19 JP JP2008240097A patent/JP4939504B2/ja not_active Expired - Fee Related
- 2008-09-26 US US12/233,000 patent/US8638421B2/en not_active Expired - Fee Related
- 2008-09-26 CN CN2008101610752A patent/CN101398632B/zh active Active
- 2008-09-26 KR KR1020080094789A patent/KR101005511B1/ko not_active Expired - Fee Related
- 2008-09-26 TW TW097137396A patent/TWI426961B/zh not_active IP Right Cessation
- 2008-09-26 CN CN2010102836876A patent/CN101950130B/zh active Active
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2010
- 2010-09-14 KR KR1020100089783A patent/KR101059489B1/ko not_active Expired - Fee Related
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2012
- 2012-02-24 JP JP2012038121A patent/JP5346100B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006134999A (ja) * | 2004-11-04 | 2006-05-25 | Sony Corp | 液浸型露光装置、及び、液浸型露光装置における保持台の洗浄方法 |
| WO2007060971A1 (ja) | 2005-11-22 | 2007-05-31 | Tokyo Ohka Kogyo Co., Ltd. | ホトリソグラフィ用洗浄液およびこれを用いた露光装置の洗浄方法 |
| JP2007150102A (ja) * | 2005-11-29 | 2007-06-14 | Fujitsu Ltd | 露光装置及び光学素子の洗浄方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090033130A (ko) | 2009-04-01 |
| US20090091716A1 (en) | 2009-04-09 |
| TWI426961B (zh) | 2014-02-21 |
| US8638421B2 (en) | 2014-01-28 |
| NL1035942A1 (nl) | 2009-03-30 |
| KR20100117548A (ko) | 2010-11-03 |
| JP5346100B2 (ja) | 2013-11-20 |
| JP2012134527A (ja) | 2012-07-12 |
| CN101398632A (zh) | 2009-04-01 |
| TW200922700A (en) | 2009-06-01 |
| CN101950130B (zh) | 2012-12-05 |
| JP2009088509A (ja) | 2009-04-23 |
| CN101398632B (zh) | 2011-11-23 |
| JP4939504B2 (ja) | 2012-05-30 |
| KR101059489B1 (ko) | 2011-08-25 |
| CN101950130A (zh) | 2011-01-19 |
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