KR100971561B1 - 노광장치 및 디바이스의 제조방법 - Google Patents

노광장치 및 디바이스의 제조방법 Download PDF

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Publication number
KR100971561B1
KR100971561B1 KR1020080058100A KR20080058100A KR100971561B1 KR 100971561 B1 KR100971561 B1 KR 100971561B1 KR 1020080058100 A KR1020080058100 A KR 1020080058100A KR 20080058100 A KR20080058100 A KR 20080058100A KR 100971561 B1 KR100971561 B1 KR 100971561B1
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South Korea
Prior art keywords
exposure
optical system
transmittance
stage
aberration
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KR1020080058100A
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English (en)
Korean (ko)
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KR20080112970A (ko
Inventor
노부히코 야부
타다오 나카무라
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020080058100A 2007-06-22 2008-06-20 노광장치 및 디바이스의 제조방법 Expired - Fee Related KR100971561B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00165312 2007-06-22
JP2007165312A JP5406437B2 (ja) 2007-06-22 2007-06-22 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20080112970A KR20080112970A (ko) 2008-12-26
KR100971561B1 true KR100971561B1 (ko) 2010-07-20

Family

ID=40136118

Family Applications (1)

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KR1020080058100A Expired - Fee Related KR100971561B1 (ko) 2007-06-22 2008-06-20 노광장치 및 디바이스의 제조방법

Country Status (4)

Country Link
US (1) US8625069B2 (enExample)
JP (1) JP5406437B2 (enExample)
KR (1) KR100971561B1 (enExample)
TW (1) TWI408515B (enExample)

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EP2219077A1 (en) 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
JP2013115348A (ja) 2011-11-30 2013-06-10 Canon Inc 投影光学系の結像特性の変動量の算出方法、露光装置およびデバイス製造方法
DE102012205096B3 (de) 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
JP6070283B2 (ja) * 2013-03-04 2017-02-01 株式会社リコー 撮像装置、露出制御方法およびプログラム
JP6474655B2 (ja) * 2014-09-30 2019-02-27 エイブリック株式会社 レチクル透過率測定方法、投影露光装置および投影露光方法
CN107278279B (zh) * 2015-02-23 2020-07-03 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
DE102015209051B4 (de) * 2015-05-18 2018-08-30 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
JP7054365B2 (ja) 2018-05-25 2022-04-13 キヤノン株式会社 評価方法、露光方法、および物品製造方法
JP7178932B2 (ja) * 2019-03-12 2022-11-28 キヤノン株式会社 露光装置、および物品製造方法
JP7213757B2 (ja) * 2019-05-31 2023-01-27 キヤノン株式会社 露光装置、および物品製造方法
JP6924235B2 (ja) * 2019-09-19 2021-08-25 キヤノン株式会社 露光方法、露光装置、物品製造方法、および半導体デバイスの製造方法
CN114132048A (zh) * 2021-12-13 2022-03-04 深圳市先地图像科技有限公司 一种利用激光直接成像设备曝光网版的方法及相关设备

Citations (4)

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JP2001102291A (ja) * 1999-09-30 2001-04-13 Nikon Corp 露光方法及び装置、並びに前記方法で使用されるマスク
WO2002052620A1 (en) * 2000-12-22 2002-07-04 Nikon Corporation Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
KR100495297B1 (ko) 2001-04-27 2005-06-16 가부시끼가이샤 도시바 노광 장치의 조도 불균일의 측정 방법, 조도 불균일의보정 방법, 반도체 장치의 제조 방법 및 노광 장치
KR100806036B1 (ko) 2003-11-13 2008-02-26 동부일렉트로닉스 주식회사 반도체 웨이퍼 노광 방법

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JPS58179834A (ja) 1982-04-14 1983-10-21 Canon Inc 投影露光装置及び方法
JPS6119129A (ja) * 1984-07-05 1986-01-28 Nippon Kogaku Kk <Nikon> 投影光学装置
US5105075A (en) * 1988-09-19 1992-04-14 Canon Kabushiki Kaisha Projection exposure apparatus
JPH02297918A (ja) * 1989-05-12 1990-12-10 Nikon Corp 投影光学装置
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
US6753948B2 (en) * 1993-04-27 2004-06-22 Nikon Corporation Scanning exposure method and apparatus
JP2828226B2 (ja) 1995-10-30 1998-11-25 株式会社ニコン 投影露光装置及び方法
JPH09148228A (ja) 1995-11-16 1997-06-06 Nikon Corp 露光装置
JPH09162107A (ja) * 1995-12-11 1997-06-20 Nikon Corp 投影露光方法
US6522386B1 (en) * 1997-07-24 2003-02-18 Nikon Corporation Exposure apparatus having projection optical system with aberration correction element
JPH11195602A (ja) * 1997-10-07 1999-07-21 Nikon Corp 投影露光方法及び装置
US6235438B1 (en) * 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
JPH11258498A (ja) * 1998-03-13 1999-09-24 Nikon Corp 投影レンズ及び走査型露光装置
JP2001297961A (ja) * 2000-04-12 2001-10-26 Canon Inc 露光装置
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
EP2453465A3 (en) * 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
JP5143331B2 (ja) * 2003-05-28 2013-02-13 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP2005183747A (ja) * 2003-12-22 2005-07-07 Matsushita Electric Ind Co Ltd 露光方法
US7221430B2 (en) * 2004-05-11 2007-05-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007206643A (ja) 2006-02-06 2007-08-16 Canon Inc 光学素子駆動装置、露光装置およびデバイス製造方法
US8237914B2 (en) * 2006-12-01 2012-08-07 Asml Netherlands B.V. Process, apparatus, and device for determining intra-field correction to correct overlay errors between overlapping patterns
NL1036546A1 (nl) * 2008-02-26 2009-08-27 Asml Netherlands Bv Lithographic method to apply a pattern to a substrate and Lithographic Apparatus.
JP2010210760A (ja) * 2009-03-09 2010-09-24 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP6316725B2 (ja) 2014-10-03 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102291A (ja) * 1999-09-30 2001-04-13 Nikon Corp 露光方法及び装置、並びに前記方法で使用されるマスク
WO2002052620A1 (en) * 2000-12-22 2002-07-04 Nikon Corporation Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
KR100495297B1 (ko) 2001-04-27 2005-06-16 가부시끼가이샤 도시바 노광 장치의 조도 불균일의 측정 방법, 조도 불균일의보정 방법, 반도체 장치의 제조 방법 및 노광 장치
KR100806036B1 (ko) 2003-11-13 2008-02-26 동부일렉트로닉스 주식회사 반도체 웨이퍼 노광 방법

Also Published As

Publication number Publication date
US20080316447A1 (en) 2008-12-25
KR20080112970A (ko) 2008-12-26
JP5406437B2 (ja) 2014-02-05
TW200907605A (en) 2009-02-16
TWI408515B (zh) 2013-09-11
US8625069B2 (en) 2014-01-07
JP2009004632A (ja) 2009-01-08

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