JP2010210760A - 投影光学系、露光装置及びデバイス製造方法 - Google Patents
投影光学系、露光装置及びデバイス製造方法 Download PDFInfo
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- JP2010210760A JP2010210760A JP2009054815A JP2009054815A JP2010210760A JP 2010210760 A JP2010210760 A JP 2010210760A JP 2009054815 A JP2009054815 A JP 2009054815A JP 2009054815 A JP2009054815 A JP 2009054815A JP 2010210760 A JP2010210760 A JP 2010210760A
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- optical system
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- 230000003287 optical effect Effects 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000000295 complement effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 17
- 238000012937 correction Methods 0.000 abstract description 48
- 230000004075 alteration Effects 0.000 abstract description 27
- 230000007246 mechanism Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 108
- 235000012239 silicon dioxide Nutrition 0.000 description 55
- 229910052681 coesite Inorganic materials 0.000 description 53
- 229910052906 cristobalite Inorganic materials 0.000 description 53
- 239000000377 silicon dioxide Substances 0.000 description 53
- 229910052682 stishovite Inorganic materials 0.000 description 53
- 229910052905 tridymite Inorganic materials 0.000 description 53
- 230000008859 change Effects 0.000 description 32
- 238000010586 diagram Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 201000009310 astigmatism Diseases 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 230000004069 differentiation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
- G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
Abstract
【解決手段】投影光学系4は、光軸AXに対して回転非対称な非球面形状を有する移動部材1と、移動部材1を光軸AXと垂直な方向に移動する移動機構6と、光軸AX上に固定され、移動部材1の非球面によって生じる光路長差を低減し、移動部材1の非球面形状と相補的な非球面形状を有しない補正部材2と、を有する。
【選択図】図1
Description
(表A)
面番号 有効径 曲率半径 面間隔 硝種
1 168.4 ∞ 20.000
2 175.1 ∞ 10.000 SiO2
3 XY 177.3 ∞ 0.100
4 XY 177.3 ∞ 10.000 SiO2
5 179.6 ∞ 49.900
6 201.1 360.35595 24.239 SiO2
7 201.2 -2626.12645 1.000
8 ASP 200.9 194.69048 31.899 SiO2
9 197.6 1033.39423 1.000
10 190.2 263.76738 24.000 SiO2
11 185.3 2469.14371 1.000
12 169.8 213.75001 13.000 SiO2
13 145.8 100.99769 40.816
14 145.0 -345.07487 13.000 SiO2
15 141.6 380.61350 19.072
16 141.6 -245.45695 13.000 SiO2
17 149.7 177.13312 42.407
18 151.6 -132.64449 13.000 SiO2
19 ASP 187.3 -614.48492 14.667
20 214.1 -1097.46560 30.000 SiO2
21 223.4 -242.75498 1.000
22 238.5 -453.28991 30.000 SiO2
23 246.3 -218.70337 1.000
24 275.8 -4951.35296 57.003 SiO2
25 280.0 -217.90659 1.000
26 280.0 285.85496 49.666 SiO2
27 277.1 -1907.93638 1.000
28 254.9 304.90243 30.000 SiO2
29 249.0 1313.36200 1.000
30 223.4 231.71506 30.000 SiO2
31 ASP 208.0 361.75424 2.705
32 204.2 419.23175 13.000 SiO2
33 172.2 148.21569 46.136
34 170.2 -226.97976 13.000 SiO2
35 ASP 155.1 134.52001 46.932
36 155.6 -160.05070 13.000 SiO2
37 175.8 1096.12398 27.414
38 181.3 -233.42897 29.001 SiO2
39 198.3 -181.92265 -0.234
40 STOP 221.3 ∞ 1.234
41 ASP 242.6 738.67490 46.969 SiO2
42 247.4 -296.57723 1.000
43 270.3 403.01957 57.460 SiO2
44 270.7 -391.65876 39.834
45 265.8 -203.71190 19.000 SiO2
46 278.2 -303.46148 8.949
47 280.0 560.59801 30.000 SiO2
48 278.0 10237.73553 1.000
49 271.2 308.20031 30.000 SiO2
50 267.4 953.67033 1.000
51 249.4 211.61929 29.160 SiO2
52 242.3 375.54148 1.000
53 222.7 173.49076 44.672 SiO2
54 213.5 1516.75806 50.000
55 ASP 125.3 -3574.40593 13.000 SiO2
56 98.2 91.30479 1.000
57 95.7 76.35234 45.000 SiO2
58 66.6 760.08315 15.000
表Aにおいて、SiO2は合成石英であり、合成石英の波長248nmに対する屈折率は1.50839である。また、ASPは回転対称非球面であり、次式で定義される面形状を有する。ここで、zはz軸方向の変位、hは√(x2+y2)で表される変数、Rは面頂点における曲率半径、kはコーニック係数、A〜Dは非球面係数である。
(表B)
面番号 有効径 曲率半径 面間隔 硝種
1 168.4 ∞ 20.000
2 XY 174.6 ∞ 8.000 SiO2
3 176.2 ∞ 51.900
4 192.3 ∞ 10.000 SiO2
5 XY 194.3 ∞ 0.100
6 XY 194.3 ∞ 24.000 SiO2
7 196.1 -317.74375 1.000
8 ASP 195.0 128.82373 47.208 SiO2
9 189.9 1321.21173 1.000
10 172.0 180.93016 13.000 SiO2
11 146.9 95.53455 39.689
12 146.1 -823.63969 13.000 SiO2
13 138.2 126.92359 42.560
14 138.9 -129.87630 13.000 SiO2
15 ASP 165.5 430.92363 53.786
16 229.6 -4569.07475 34.601 SiO2
17 236.6 -263.60528 1.000
18 251.9 -770.76064 44.163 SiO2
19 257.0 -200.73376 1.000
20 267.7 1012.66170 30.000 SiO2
21 268.0 -691.18493 1.000
22 262.5 397.75217 38.700 SiO2
23 259.9 -1007.78240 1.000
24 232.5 229.67477 30.000 SiO2
25 225.3 619.90604 1.000
26 204.4 198.24797 34.502 SiO2
27 ASP 157.4 105.09593 51.378
28 154.1 -265.65699 13.000 SiO2
29 ASP 144.2 125.79300 63.614
30 153.0 -239.33555 13.000 SiO2
31 165.1 1195.59834 50.868
32 193.6 -364.86223 18.472 SiO2
33 202.4 -229.11292 -17.624
34 STOP 203.7 ∞ 18.624
35 ASP 242.6 832.43292 38.675 SiO2
36 246.8 -389.09720 1.000
37 265.1 452.24289 51.780 SiO2
38 265.8 -413.86377 50.112
39 258.5 -221.49348 19.000 SiO2
40 268.0 -307.14415 8.547
41 268.0 490.94417 30.000 SiO2
42 265.8 32409.69300 1.000
43 257.7 313.61137 30.000 SiO2
44 251.4 737.52560 1.000
45 237.5 220.30779 29.160 SiO2
46 225.6 316.96456 1.000
47 211.3 166.42979 42.603 SiO2
48 202.9 1595.28264 50.000
49 ASP 122.8 21215.62844 18.539 SiO2
50 93.9 88.40230 1.000
51 91.6 73.90385 45.044 SiO2
52 62.8 401.14620 15.000
表Bにおいて表Aにおける記号と同一の記号は同一の部材を表している。表2はASPのコーニック係数kと非球面係数A〜Dを示す。
2、21、22 補正部材(第2光学素子)
3 原版
4 投影光学系
5 基板
6 移動機構(移動手段)
Claims (4)
- 物体面の像を像面に投影する投影光学系であって、
光軸に対して回転非対称な非球面形状を有する第1光学素子と、
当該第1光学素子を前記光軸と垂直な方向に移動する移動手段と、
前記光軸上に固定され、第1光学素子の非球面によって生じる光路長差を低減し、前記第1光学素子の非球面形状と相補的な非球面形状を有しない第2光学素子と、
を有することを特徴とする投影光学系。 - 前記第1光学素子と前記第2光学素子は隣接して配置されることを特徴とする請求項1に記載の投影光学系。
- 請求項1又は2に記載の投影光学系を有することを特徴とする露光装置。
- 請求項3に記載の露光装置を使用して基板を露光するステップと、
露光された前記基板を現像するステップと、
を有することを特徴とするデバイス製造方法。
Priority Applications (2)
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JP2009054815A JP2010210760A (ja) | 2009-03-09 | 2009-03-09 | 投影光学系、露光装置及びデバイス製造方法 |
US12/720,080 US8477286B2 (en) | 2009-03-09 | 2010-03-09 | Projection optical system, exposure apparatus, and device manufacturing method |
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JP2009054815A JP2010210760A (ja) | 2009-03-09 | 2009-03-09 | 投影光学系、露光装置及びデバイス製造方法 |
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JP2010210760A true JP2010210760A (ja) | 2010-09-24 |
JP2010210760A5 JP2010210760A5 (ja) | 2012-04-26 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5406437B2 (ja) * | 2007-06-22 | 2014-02-05 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
NL1036546A1 (nl) | 2008-02-26 | 2009-08-27 | Asml Netherlands Bv | Lithographic method to apply a pattern to a substrate and Lithographic Apparatus. |
JP5312058B2 (ja) * | 2009-01-19 | 2013-10-09 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
DE102011080437A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Abbildendes optisches System für die Mikrolithographie |
DE102017209440A1 (de) * | 2017-06-02 | 2018-12-06 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithografie |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10242048A (ja) * | 1996-12-28 | 1998-09-11 | Canon Inc | 投影露光装置及びデバイスの製造方法 |
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DE69728126T2 (de) * | 1996-12-28 | 2005-01-20 | Canon K.K. | Projektionsbelichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
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- 2010-03-09 US US12/720,080 patent/US8477286B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10242048A (ja) * | 1996-12-28 | 1998-09-11 | Canon Inc | 投影露光装置及びデバイスの製造方法 |
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US20100225889A1 (en) | 2010-09-09 |
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