JP5406437B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP5406437B2
JP5406437B2 JP2007165312A JP2007165312A JP5406437B2 JP 5406437 B2 JP5406437 B2 JP 5406437B2 JP 2007165312 A JP2007165312 A JP 2007165312A JP 2007165312 A JP2007165312 A JP 2007165312A JP 5406437 B2 JP5406437 B2 JP 5406437B2
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JP
Japan
Prior art keywords
exposure
aberration
optical system
mask
image height
Prior art date
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Expired - Fee Related
Application number
JP2007165312A
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English (en)
Japanese (ja)
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JP2009004632A5 (enExample
JP2009004632A (ja
Inventor
伸彦 藪
忠央 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007165312A priority Critical patent/JP5406437B2/ja
Priority to TW097121541A priority patent/TWI408515B/zh
Priority to US12/141,216 priority patent/US8625069B2/en
Priority to KR1020080058100A priority patent/KR100971561B1/ko
Publication of JP2009004632A publication Critical patent/JP2009004632A/ja
Publication of JP2009004632A5 publication Critical patent/JP2009004632A5/ja
Application granted granted Critical
Publication of JP5406437B2 publication Critical patent/JP5406437B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007165312A 2007-06-22 2007-06-22 露光装置及びデバイス製造方法 Expired - Fee Related JP5406437B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007165312A JP5406437B2 (ja) 2007-06-22 2007-06-22 露光装置及びデバイス製造方法
TW097121541A TWI408515B (zh) 2007-06-22 2008-06-10 曝光設備及裝置製造方法
US12/141,216 US8625069B2 (en) 2007-06-22 2008-06-18 Exposure apparatus and method of manufacturing device
KR1020080058100A KR100971561B1 (ko) 2007-06-22 2008-06-20 노광장치 및 디바이스의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007165312A JP5406437B2 (ja) 2007-06-22 2007-06-22 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2009004632A JP2009004632A (ja) 2009-01-08
JP2009004632A5 JP2009004632A5 (enExample) 2010-07-29
JP5406437B2 true JP5406437B2 (ja) 2014-02-05

Family

ID=40136118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007165312A Expired - Fee Related JP5406437B2 (ja) 2007-06-22 2007-06-22 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8625069B2 (enExample)
JP (1) JP5406437B2 (enExample)
KR (1) KR100971561B1 (enExample)
TW (1) TWI408515B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10545413B2 (en) 2018-05-25 2020-01-28 Canon Kabushiki Kaisha Evaluation method, exposure method, and method for manufacturing an article

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EP2219077A1 (en) 2009-02-12 2010-08-18 Carl Zeiss SMT AG Projection exposure method, projection exposure system and projection objective
JP2013115348A (ja) 2011-11-30 2013-06-10 Canon Inc 投影光学系の結像特性の変動量の算出方法、露光装置およびデバイス製造方法
DE102012205096B3 (de) 2012-03-29 2013-08-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
JP6070283B2 (ja) * 2013-03-04 2017-02-01 株式会社リコー 撮像装置、露出制御方法およびプログラム
JP6474655B2 (ja) * 2014-09-30 2019-02-27 エイブリック株式会社 レチクル透過率測定方法、投影露光装置および投影露光方法
CN107278279B (zh) * 2015-02-23 2020-07-03 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
DE102015209051B4 (de) * 2015-05-18 2018-08-30 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage
JP7178932B2 (ja) * 2019-03-12 2022-11-28 キヤノン株式会社 露光装置、および物品製造方法
JP7213757B2 (ja) * 2019-05-31 2023-01-27 キヤノン株式会社 露光装置、および物品製造方法
JP6924235B2 (ja) * 2019-09-19 2021-08-25 キヤノン株式会社 露光方法、露光装置、物品製造方法、および半導体デバイスの製造方法
CN114132048A (zh) * 2021-12-13 2022-03-04 深圳市先地图像科技有限公司 一种利用激光直接成像设备曝光网版的方法及相关设备

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JPS58179834A (ja) 1982-04-14 1983-10-21 Canon Inc 投影露光装置及び方法
JPS6119129A (ja) * 1984-07-05 1986-01-28 Nippon Kogaku Kk <Nikon> 投影光学装置
US5105075A (en) * 1988-09-19 1992-04-14 Canon Kabushiki Kaisha Projection exposure apparatus
JPH02297918A (ja) * 1989-05-12 1990-12-10 Nikon Corp 投影光学装置
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
JP3301153B2 (ja) * 1993-04-06 2002-07-15 株式会社ニコン 投影露光装置、露光方法、及び素子製造方法
US6753948B2 (en) * 1993-04-27 2004-06-22 Nikon Corporation Scanning exposure method and apparatus
JP2828226B2 (ja) 1995-10-30 1998-11-25 株式会社ニコン 投影露光装置及び方法
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JPH09162107A (ja) * 1995-12-11 1997-06-20 Nikon Corp 投影露光方法
US6522386B1 (en) * 1997-07-24 2003-02-18 Nikon Corporation Exposure apparatus having projection optical system with aberration correction element
JPH11195602A (ja) * 1997-10-07 1999-07-21 Nikon Corp 投影露光方法及び装置
US6235438B1 (en) * 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
JPH11258498A (ja) * 1998-03-13 1999-09-24 Nikon Corp 投影レンズ及び走査型露光装置
JP2001102291A (ja) * 1999-09-30 2001-04-13 Nikon Corp 露光方法及び装置、並びに前記方法で使用されるマスク
JP2001297961A (ja) * 2000-04-12 2001-10-26 Canon Inc 露光装置
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
WO2002052620A1 (en) * 2000-12-22 2002-07-04 Nikon Corporation Wavefront aberration measuring instrument, wavefront aberration measuring method, exposure apparatus, and method for manufacturing microdevice
JP4230676B2 (ja) 2001-04-27 2009-02-25 株式会社東芝 露光装置の照度むらの測定方法、照度むらの補正方法、半導体デバイスの製造方法及び露光装置
EP2453465A3 (en) * 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
JP5143331B2 (ja) * 2003-05-28 2013-02-13 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
KR100806036B1 (ko) 2003-11-13 2008-02-26 동부일렉트로닉스 주식회사 반도체 웨이퍼 노광 방법
JP2005183747A (ja) * 2003-12-22 2005-07-07 Matsushita Electric Ind Co Ltd 露光方法
US7221430B2 (en) * 2004-05-11 2007-05-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007206643A (ja) 2006-02-06 2007-08-16 Canon Inc 光学素子駆動装置、露光装置およびデバイス製造方法
US8237914B2 (en) * 2006-12-01 2012-08-07 Asml Netherlands B.V. Process, apparatus, and device for determining intra-field correction to correct overlay errors between overlapping patterns
NL1036546A1 (nl) * 2008-02-26 2009-08-27 Asml Netherlands Bv Lithographic method to apply a pattern to a substrate and Lithographic Apparatus.
JP2010210760A (ja) * 2009-03-09 2010-09-24 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP6316725B2 (ja) 2014-10-03 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10545413B2 (en) 2018-05-25 2020-01-28 Canon Kabushiki Kaisha Evaluation method, exposure method, and method for manufacturing an article

Also Published As

Publication number Publication date
US20080316447A1 (en) 2008-12-25
KR100971561B1 (ko) 2010-07-20
KR20080112970A (ko) 2008-12-26
TW200907605A (en) 2009-02-16
TWI408515B (zh) 2013-09-11
US8625069B2 (en) 2014-01-07
JP2009004632A (ja) 2009-01-08

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