KR100948286B1 - 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 - Google Patents

매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 Download PDF

Info

Publication number
KR100948286B1
KR100948286B1 KR1020070007123A KR20070007123A KR100948286B1 KR 100948286 B1 KR100948286 B1 KR 100948286B1 KR 1020070007123 A KR1020070007123 A KR 1020070007123A KR 20070007123 A KR20070007123 A KR 20070007123A KR 100948286 B1 KR100948286 B1 KR 100948286B1
Authority
KR
South Korea
Prior art keywords
wafer
etching
supply
etchant
supply nozzles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070007123A
Other languages
English (en)
Korean (ko)
Other versions
KR20070078981A (ko
Inventor
사카에 코야타
토모히로 하시이
카츠히코 무라야마
카즈시게 타카이시
타케오 카토
Original Assignee
가부시키가이샤 섬코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 섬코 filed Critical 가부시키가이샤 섬코
Publication of KR20070078981A publication Critical patent/KR20070078981A/ko
Application granted granted Critical
Publication of KR100948286B1 publication Critical patent/KR100948286B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020070007123A 2006-01-31 2007-01-23 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 Expired - Fee Related KR100948286B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00021899 2006-01-31
JP2006021899A JP4835175B2 (ja) 2006-01-31 2006-01-31 ウェーハの枚葉式エッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090002214A Division KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Publications (2)

Publication Number Publication Date
KR20070078981A KR20070078981A (ko) 2007-08-03
KR100948286B1 true KR100948286B1 (ko) 2010-03-17

Family

ID=38321003

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070007123A Expired - Fee Related KR100948286B1 (ko) 2006-01-31 2007-01-23 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법
KR1020090002214A Withdrawn KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020090002214A Withdrawn KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Country Status (3)

Country Link
US (1) US7906438B2 (https=)
JP (1) JP4835175B2 (https=)
KR (2) KR100948286B1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP2010003847A (ja) * 2008-06-19 2010-01-07 Sumco Corp 半導体ウェーハの製造方法
JP5026356B2 (ja) * 2008-06-26 2012-09-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP2010177541A (ja) * 2009-01-30 2010-08-12 Pre-Tech At:Kk Ｓｉウェーハの加工ダメージ除去方法
JP5389473B2 (ja) * 2009-03-03 2014-01-15 株式会社ディスコ スピンナ洗浄装置
KR101044009B1 (ko) * 2009-07-17 2011-06-24 세메스 주식회사 기판 표면을 선택적으로 에칭하기 위한 기판 처리 장치
JP5490659B2 (ja) * 2009-12-09 2014-05-14 東京エレクトロン株式会社 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2012004294A (ja) * 2010-06-16 2012-01-05 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP5807949B2 (ja) * 2010-11-12 2015-11-10 国立大学法人東北大学 超高速ウェットエッチング装置
KR101308352B1 (ko) 2011-12-16 2013-09-17 주식회사 엘지실트론 매엽식 웨이퍼 에칭장치
US9079210B2 (en) * 2013-07-22 2015-07-14 Infineon Technologies Ag Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium
JP6311236B2 (ja) 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
US9653338B2 (en) * 2013-12-23 2017-05-16 Kla-Tencor Corporation System and method for non-contact wafer chucking
US10332761B2 (en) 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
US10403517B2 (en) 2015-02-18 2019-09-03 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6504540B2 (ja) * 2015-02-25 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6485904B2 (ja) * 2015-03-03 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6509583B2 (ja) * 2015-02-25 2019-05-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN107534011B (zh) * 2015-05-14 2021-01-15 盛美半导体设备(上海)股份有限公司 基板斜边和背面保护装置
JP2018147908A (ja) * 2015-07-27 2018-09-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
US10269758B2 (en) * 2015-12-24 2019-04-23 Intel Corporation Systems and processes for measuring thickness values of semiconductor substrates
JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
TWI821761B (zh) * 2016-05-06 2023-11-11 美商應用材料股份有限公司 用於蝕刻系統的晶圓輪廓
DE102017212887A1 (de) 2017-07-26 2019-01-31 Gebr. Schmid Gmbh Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung
KR101985756B1 (ko) * 2017-08-09 2019-06-04 세메스 주식회사 기판 처리 장치 및 방법
JP2020123676A (ja) * 2019-01-30 2020-08-13 信越半導体株式会社 エッチング方法
KR20240002000A (ko) * 2022-06-28 2024-01-04 삼성전자주식회사 현상 장치
KR102826393B1 (ko) * 2024-07-31 2025-06-27 에프엔에스테크 주식회사 미세회로 패턴 형성용 에칭 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163161A (ja) 1996-11-27 1998-06-19 Toshiba Corp スピン処理装置
KR20030081607A (ko) * 2002-04-12 2003-10-22 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP2004140196A (ja) 2002-10-17 2004-05-13 Nec Electronics Corp 半導体装置の製造方法および基板洗浄装置
KR20050116303A (ko) * 2004-06-07 2005-12-12 동부아남반도체 주식회사 현상액 분사 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322428A (ja) * 1989-06-19 1991-01-30 Nec Kyushu Ltd 半導体装置の製造装置
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
EP0611273B1 (de) * 1993-02-08 1998-09-16 SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG Träger für scheibenförmige Gegenstände
JP3194037B2 (ja) * 1996-09-24 2001-07-30 東京エレクトロン株式会社 枚葉回転処理方法及びその装置
TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JPH1145872A (ja) * 1997-07-25 1999-02-16 Shin Etsu Handotai Co Ltd 半導体基板の平坦化方法および平坦化装置
JPH11135464A (ja) 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
EP0928017B1 (en) * 1997-12-09 2014-09-10 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer processing method
JPH11354489A (ja) * 1998-06-05 1999-12-24 Toshiba Corp 半導体製造装置及び半導体装置のエッチング方法
JP5134774B2 (ja) * 2006-01-16 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163161A (ja) 1996-11-27 1998-06-19 Toshiba Corp スピン処理装置
KR20030081607A (ko) * 2002-04-12 2003-10-22 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP2004140196A (ja) 2002-10-17 2004-05-13 Nec Electronics Corp 半導体装置の製造方法および基板洗浄装置
KR20050116303A (ko) * 2004-06-07 2005-12-12 동부아남반도체 주식회사 현상액 분사 장치

Also Published As

Publication number Publication date
KR20070078981A (ko) 2007-08-03
US20070175863A1 (en) 2007-08-02
US7906438B2 (en) 2011-03-15
JP4835175B2 (ja) 2011-12-14
KR20090012364A (ko) 2009-02-03
JP2007207810A (ja) 2007-08-16

Similar Documents

Publication Publication Date Title
KR100948286B1 (ko) 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법
US8466071B2 (en) Method for etching single wafer
TWI458589B (zh) 輪廓量測方法
KR100927855B1 (ko) 웨이퍼의 매엽식 에칭 방법 및 그 에칭 장치
KR100943725B1 (ko) 매엽식 웨이퍼 식각 장치
KR20180097136A (ko) 기판의 연마 장치 및 연마 방법
KR100903602B1 (ko) 실리콘 웨이퍼 제조 방법
US20030013380A1 (en) Semiconductor wafer dividing method
TWI522204B (zh) 化學機械研磨系統及方法
JP2018134710A5 (https=)
WO2001070454A1 (en) Cluster tool systems and methods for processing wafers
US20250316506A1 (en) Substrate processing method and substrate processing system
US6695682B2 (en) Polishing method and polishing apparatus
US7955982B2 (en) Method for smoothing wafer surface and apparatus used therefor
JP2010040543A (ja) 半導体ウェーハの加工装置
US20020004265A1 (en) Grind polish cluster and methods to remove visual grind pattern
JP2013069842A (ja) ウェットエッチング装置
US6592429B1 (en) Method and apparatus for controlling wafer uniformity in a chemical mechanical polishing tool using carrier head signatures
US20260084263A1 (en) Polishing surface dressing method and method of manufacturing substrate
US20250018531A1 (en) Wafer grinding method
JP2001239457A (ja) ポリッシング装置
JP2009248258A (ja) 研磨パッドのドレッシング方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

A107 Divisional application of patent
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
E801 Decision on dismissal of amendment
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20081216

Effective date: 20100212

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20100212

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2007 0007123

Appeal request date: 20081216

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2008101013353

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130312

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130312

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000