KR100934401B1 - 주석 도금액, 그 주석 도금액을 이용한 주석 도금 방법,주석 도금액 조정 방법 및 그 주석 도금액을 이용하여형성된 주석 도금층을 구비한 칩 부품 - Google Patents

주석 도금액, 그 주석 도금액을 이용한 주석 도금 방법,주석 도금액 조정 방법 및 그 주석 도금액을 이용하여형성된 주석 도금층을 구비한 칩 부품 Download PDF

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KR100934401B1
KR100934401B1 KR1020077024412A KR20077024412A KR100934401B1 KR 100934401 B1 KR100934401 B1 KR 100934401B1 KR 1020077024412 A KR1020077024412 A KR 1020077024412A KR 20077024412 A KR20077024412 A KR 20077024412A KR 100934401 B1 KR100934401 B1 KR 100934401B1
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tin plating
tin
plating liquid
solution
sulfonic acid
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Korean (ko)
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KR20070116654A (ko
Inventor
사토시 가와시마
히로유키 타시로
시게노리 에무라
다카미츠 나시야마
히데유키 산페이
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멜텍스 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
KR1020077024412A 2005-04-28 2006-02-22 주석 도금액, 그 주석 도금액을 이용한 주석 도금 방법,주석 도금액 조정 방법 및 그 주석 도금액을 이용하여형성된 주석 도금층을 구비한 칩 부품 Expired - Lifetime KR100934401B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005132092 2005-04-28
JPJP-P-2005-00132092 2005-04-28
PCT/JP2006/303124 WO2006117920A1 (ja) 2005-04-28 2006-02-22 スズめっき液、そのスズめっき液を用いためっき方法、スズめっき液調整方法及びそのスズめっき液を用いてスズめっき層を形成したチップ部品

Publications (2)

Publication Number Publication Date
KR20070116654A KR20070116654A (ko) 2007-12-10
KR100934401B1 true KR100934401B1 (ko) 2009-12-29

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KR1020077024412A Expired - Lifetime KR100934401B1 (ko) 2005-04-28 2006-02-22 주석 도금액, 그 주석 도금액을 이용한 주석 도금 방법,주석 도금액 조정 방법 및 그 주석 도금액을 이용하여형성된 주석 도금층을 구비한 칩 부품

Country Status (4)

Country Link
JP (1) JP3878959B2 (https=)
KR (1) KR100934401B1 (https=)
TW (1) TW200706707A (https=)
WO (1) WO2006117920A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103014786A (zh) * 2013-01-22 2013-04-03 广州博泉环保材料科技有限公司 电镀液、其制备方法及应用此电镀液的镀锡工艺
KR20250124510A (ko) 2024-02-13 2025-08-20 한국생산기술연구원 솔더 범프용 주석 도금액

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* Cited by examiner, † Cited by third party
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JP4632186B2 (ja) * 2007-08-01 2011-02-16 太陽化学工業株式会社 電子部品用錫電解めっき液、電子部品の錫電解めっき方法及び錫電解めっき電子部品
CN101748425B (zh) * 2008-12-05 2014-07-09 宜兴方晶科技有限公司 甲基磺酸亚锡制备方法
JP6127289B2 (ja) * 2012-03-02 2017-05-17 国立大学法人信州大学 リチウムイオン電池用負極材料およびその製造方法
CN104109885B (zh) * 2013-04-22 2017-02-01 广东致卓精密金属科技有限公司 一种弱碱性焦磷酸盐电镀光亮锡溶液及工艺
CN105899714B (zh) * 2013-12-05 2018-09-21 霍尼韦尔国际公司 具有经调节的pH的甲基磺酸亚锡溶液
PL3166999T3 (pl) 2014-07-07 2023-07-03 Honeywell International Inc. Materiał termoprzewodzący ze zmiataczem jonów
EP3227399B1 (en) 2014-12-05 2021-07-14 Honeywell International Inc. High performance thermal interface materials with low thermal impedance
CN104593835B (zh) * 2015-02-04 2017-10-24 广东羚光新材料股份有限公司 用于片式元器件端电极电镀的中性镀锡液
US10312177B2 (en) 2015-11-17 2019-06-04 Honeywell International Inc. Thermal interface materials including a coloring agent
CN105525312B (zh) * 2015-12-11 2017-12-29 广州市精利表面处理技术有限公司 一种镀锡溶液及其制备方法
EP3426746B1 (en) 2016-03-08 2021-07-14 Honeywell International Inc. Phase change material
US10501671B2 (en) 2016-07-26 2019-12-10 Honeywell International Inc. Gel-type thermal interface material
JP6818520B2 (ja) * 2016-11-11 2021-01-20 ローム・アンド・ハース電子材料株式会社 中性スズめっき液を用いたバレルめっきまたは高速回転めっき方法
US11041103B2 (en) 2017-09-08 2021-06-22 Honeywell International Inc. Silicone-free thermal gel
US10428256B2 (en) 2017-10-23 2019-10-01 Honeywell International Inc. Releasable thermal gel
WO2019125951A1 (en) * 2017-12-18 2019-06-27 New Mexico Tech University Research Park Corporation Tin-indium alloy electroplating solution
US11072706B2 (en) 2018-02-15 2021-07-27 Honeywell International Inc. Gel-type thermal interface material
US11373921B2 (en) 2019-04-23 2022-06-28 Honeywell International Inc. Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing
JP7598552B2 (ja) 2020-10-02 2024-12-12 メルテックス株式会社 バレルめっき用スズめっき液
CN113430592A (zh) * 2021-06-30 2021-09-24 广东德浩化工新材料有限公司 一种中性镀锡稳定剂及其制备方法
KR102664806B1 (ko) * 2021-11-18 2024-05-10 주식회사 에이엔씨코리아 적층세라믹 콘덴서용 주석도금액

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003293186A (ja) * 2002-04-09 2003-10-15 Ishihara Chem Co Ltd 中性スズメッキ浴、当該浴を用いたバレルメッキ方法
JP2005126773A (ja) 2003-10-24 2005-05-19 Murata Mfg Co Ltd めっき浴の作製方法、めっき浴、めっき方法、及び電子部品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003293186A (ja) * 2002-04-09 2003-10-15 Ishihara Chem Co Ltd 中性スズメッキ浴、当該浴を用いたバレルメッキ方法
JP2005126773A (ja) 2003-10-24 2005-05-19 Murata Mfg Co Ltd めっき浴の作製方法、めっき浴、めっき方法、及び電子部品の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103014786A (zh) * 2013-01-22 2013-04-03 广州博泉环保材料科技有限公司 电镀液、其制备方法及应用此电镀液的镀锡工艺
KR20250124510A (ko) 2024-02-13 2025-08-20 한국생산기술연구원 솔더 범프용 주석 도금액

Also Published As

Publication number Publication date
JP2006328528A (ja) 2006-12-07
TW200706707A (en) 2007-02-16
WO2006117920A1 (ja) 2006-11-09
KR20070116654A (ko) 2007-12-10
JP3878959B2 (ja) 2007-02-07
TWI325022B (https=) 2010-05-21

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