KR100911696B1 - 액침 노광방법 및 액침 노광장치 - Google Patents

액침 노광방법 및 액침 노광장치 Download PDF

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Publication number
KR100911696B1
KR100911696B1 KR1020070113020A KR20070113020A KR100911696B1 KR 100911696 B1 KR100911696 B1 KR 100911696B1 KR 1020070113020 A KR1020070113020 A KR 1020070113020A KR 20070113020 A KR20070113020 A KR 20070113020A KR 100911696 B1 KR100911696 B1 KR 100911696B1
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KR
South Korea
Prior art keywords
liquid
stage
path
movement
substrate
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Expired - Fee Related
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KR1020070113020A
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English (en)
Korean (ko)
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KR20080042701A (ko
Inventor
케이지 에모토
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20080042701A publication Critical patent/KR20080042701A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070113020A 2006-11-10 2007-11-07 액침 노광방법 및 액침 노광장치 Expired - Fee Related KR100911696B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006305242A JP2008124194A (ja) 2006-11-10 2006-11-10 液浸露光方法および液浸露光装置
JPJP-P-2006-00305242 2006-11-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090032244A Division KR101015118B1 (ko) 2006-11-10 2009-04-14 액침 노광방법 및 액침 노광장치

Publications (2)

Publication Number Publication Date
KR20080042701A KR20080042701A (ko) 2008-05-15
KR100911696B1 true KR100911696B1 (ko) 2009-08-10

Family

ID=39145193

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070113020A Expired - Fee Related KR100911696B1 (ko) 2006-11-10 2007-11-07 액침 노광방법 및 액침 노광장치
KR1020090032244A Expired - Fee Related KR101015118B1 (ko) 2006-11-10 2009-04-14 액침 노광방법 및 액침 노광장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020090032244A Expired - Fee Related KR101015118B1 (ko) 2006-11-10 2009-04-14 액침 노광방법 및 액침 노광장치

Country Status (5)

Country Link
US (1) US7518708B2 (enExample)
EP (1) EP1921504A3 (enExample)
JP (1) JP2008124194A (enExample)
KR (2) KR100911696B1 (enExample)
TW (1) TW200834248A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481698B2 (ja) * 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
WO2009060585A1 (ja) * 2007-11-07 2009-05-14 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2009182110A (ja) * 2008-01-30 2009-08-13 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
NL2003362A (en) 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2221669A3 (en) 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
TWI502283B (zh) * 2009-04-03 2015-10-01 尼康股份有限公司 曝光裝置、曝光方法及元件製造方法
EP2264529A3 (en) * 2009-06-16 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
JP5507392B2 (ja) * 2009-09-11 2014-05-28 エーエスエムエル ネザーランズ ビー．ブイ． シャッター部材、リソグラフィ装置及びデバイス製造方法
NL2006818A (en) 2010-07-02 2012-01-03 Asml Netherlands Bv A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus.
JP6017134B2 (ja) * 2011-12-13 2016-10-26 東京エレクトロン株式会社 生産効率化システム、生産効率化装置および生産効率化方法
JP6802726B2 (ja) * 2017-02-14 2020-12-16 株式会社Ｓｃｒｅｅｎホールディングス 基板搬送装置、それを備える基板処理装置および基板搬送方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191557A (ja) 2003-12-03 2005-07-14 Nikon Corp 露光装置及び露光方法、デバイス製造方法
JP2005268747A (ja) 2003-10-09 2005-09-29 Nikon Corp 露光装置及び露光方法、デバイス製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI614794B (zh) * 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
JP4720106B2 (ja) * 2003-05-23 2011-07-13 株式会社ニコン 露光方法、並びにデバイス製造方法
ATE467902T1 (de) * 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
JP4474927B2 (ja) * 2004-01-20 2010-06-09 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
WO2005076321A1 (ja) * 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
JP3870207B2 (ja) * 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
WO2006041100A1 (ja) * 2004-10-15 2006-04-20 Nikon Corporation 露光装置及びデバイス製造方法
WO2006080212A1 (ja) * 2005-01-28 2006-08-03 Nikon Corporation 投影光学系、露光装置、および露光方法
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080246937A1 (en) * 2005-04-27 2008-10-09 Nikon Corporation Exposing Method, Exposure Apparatus, Device Fabricating Method, and Film Evaluating Method
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268747A (ja) 2003-10-09 2005-09-29 Nikon Corp 露光装置及び露光方法、デバイス製造方法
JP2005191557A (ja) 2003-12-03 2005-07-14 Nikon Corp 露光装置及び露光方法、デバイス製造方法

Also Published As

Publication number Publication date
TW200834248A (en) 2008-08-16
KR20090053882A (ko) 2009-05-28
KR101015118B1 (ko) 2011-02-16
US7518708B2 (en) 2009-04-14
EP1921504A3 (en) 2010-11-24
JP2008124194A (ja) 2008-05-29
EP1921504A2 (en) 2008-05-14
US20080111979A1 (en) 2008-05-15
KR20080042701A (ko) 2008-05-15

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