TW200834248A - Liquid-immersion exposure method and liquid-immersion exposure apparatus - Google Patents

Liquid-immersion exposure method and liquid-immersion exposure apparatus

Info

Publication number
TW200834248A
TW200834248A TW096142041A TW96142041A TW200834248A TW 200834248 A TW200834248 A TW 200834248A TW 096142041 A TW096142041 A TW 096142041A TW 96142041 A TW96142041 A TW 96142041A TW 200834248 A TW200834248 A TW 200834248A
Authority
TW
Taiwan
Prior art keywords
liquid
immersion exposure
exposure apparatus
stage
exposure method
Prior art date
Application number
TW096142041A
Other languages
English (en)
Chinese (zh)
Inventor
Keiji Emoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200834248A publication Critical patent/TW200834248A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096142041A 2006-11-10 2007-11-07 Liquid-immersion exposure method and liquid-immersion exposure apparatus TW200834248A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006305242A JP2008124194A (ja) 2006-11-10 2006-11-10 液浸露光方法および液浸露光装置

Publications (1)

Publication Number Publication Date
TW200834248A true TW200834248A (en) 2008-08-16

Family

ID=39145193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142041A TW200834248A (en) 2006-11-10 2007-11-07 Liquid-immersion exposure method and liquid-immersion exposure apparatus

Country Status (5)

Country Link
US (1) US7518708B2 (enExample)
EP (1) EP1921504A3 (enExample)
JP (1) JP2008124194A (enExample)
KR (2) KR100911696B1 (enExample)
TW (1) TW200834248A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422990B (zh) * 2009-06-16 2014-01-11 Asml Netherlands Bv 微影裝置、控制裝置的方法及利用微影裝置製造元件的方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481698B2 (ja) * 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
JP4986185B2 (ja) * 2007-11-07 2012-07-25 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2009182110A (ja) * 2008-01-30 2009-08-13 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009218564A (ja) * 2008-02-12 2009-09-24 Canon Inc 露光装置及びデバイス製造方法
NL2003362A (en) 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2221669A3 (en) 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
TWI502283B (zh) * 2009-04-03 2015-10-01 尼康股份有限公司 曝光裝置、曝光方法及元件製造方法
JP5507392B2 (ja) 2009-09-11 2014-05-28 エーエスエムエル ネザーランズ ビー．ブイ． シャッター部材、リソグラフィ装置及びデバイス製造方法
NL2006818A (en) 2010-07-02 2012-01-03 Asml Netherlands Bv A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus.
JP6017134B2 (ja) * 2011-12-13 2016-10-26 東京エレクトロン株式会社 生産効率化システム、生産効率化装置および生産効率化方法
JP6802726B2 (ja) * 2017-02-14 2020-12-16 株式会社Ｓｃｒｅｅｎホールディングス 基板搬送装置、それを備える基板処理装置および基板搬送方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
JP4720106B2 (ja) * 2003-05-23 2011-07-13 株式会社ニコン 露光方法、並びにデバイス製造方法
TWI511181B (zh) * 2003-05-23 2015-12-01 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
JP4524601B2 (ja) 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4513534B2 (ja) 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
KR101324810B1 (ko) * 2004-01-05 2013-11-01 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4474927B2 (ja) * 2004-01-20 2010-06-09 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP4506674B2 (ja) * 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
JP3870207B2 (ja) * 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
KR101331631B1 (ko) * 2004-10-15 2013-11-20 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4957970B2 (ja) * 2005-01-28 2012-06-20 株式会社ニコン 投影光学系、露光装置、および露光方法
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR20080005362A (ko) * 2005-04-27 2008-01-11 가부시키가이샤 니콘 노광 방법, 노광 장치, 디바이스 제조 방법 및 막의 평가방법
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422990B (zh) * 2009-06-16 2014-01-11 Asml Netherlands Bv 微影裝置、控制裝置的方法及利用微影裝置製造元件的方法

Also Published As

Publication number Publication date
EP1921504A3 (en) 2010-11-24
US20080111979A1 (en) 2008-05-15
EP1921504A2 (en) 2008-05-14
KR101015118B1 (ko) 2011-02-16
KR20080042701A (ko) 2008-05-15
JP2008124194A (ja) 2008-05-29
US7518708B2 (en) 2009-04-14
KR100911696B1 (ko) 2009-08-10
KR20090053882A (ko) 2009-05-28

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