KR100900468B1 - ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법 - Google Patents

ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법 Download PDF

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Publication number
KR100900468B1
KR100900468B1 KR1020020045513A KR20020045513A KR100900468B1 KR 100900468 B1 KR100900468 B1 KR 100900468B1 KR 1020020045513 A KR1020020045513 A KR 1020020045513A KR 20020045513 A KR20020045513 A KR 20020045513A KR 100900468 B1 KR100900468 B1 KR 100900468B1
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South Korea
Prior art keywords
group
acid
general formula
resist composition
positive resist
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Ceased
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KR1020020045513A
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English (en)
Korean (ko)
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KR20030035826A (ko
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사토겐이치로
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후지필름 가부시키가이샤
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Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020020045513A 2001-08-03 2002-08-01 ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법 Ceased KR100900468B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001236460A JP4149148B2 (ja) 2001-08-03 2001-08-03 ポジ型レジスト組成物
JPJP-P-2001-00236460 2001-08-03

Publications (2)

Publication Number Publication Date
KR20030035826A KR20030035826A (ko) 2003-05-09
KR100900468B1 true KR100900468B1 (ko) 2009-06-03

Family

ID=19067723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020045513A Ceased KR100900468B1 (ko) 2001-08-03 2002-08-01 ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법

Country Status (3)

Country Link
JP (1) JP4149148B2 (https=)
KR (1) KR100900468B1 (https=)
TW (1) TW574626B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
ATE481430T1 (de) 2002-11-05 2010-10-15 Jsr Corp Acrylcopolymer und strahlungsempfindliche harzzusammensetzung
JP4225817B2 (ja) 2003-03-31 2009-02-18 富士フイルム株式会社 ポジ型レジスト組成物
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP4765625B2 (ja) * 2003-08-05 2011-09-07 Ｊｓｒ株式会社 アクリル系重合体および感放射線性樹脂組成物
JP2011068648A (ja) * 2004-04-23 2011-04-07 Sumitomo Chemical Co Ltd 化学増幅型ポジ型レジスト組成物及び（メタ）アクリル酸誘導体とその製法
US7122291B2 (en) 2004-08-02 2006-10-17 Az Electronic Materials Usa Corp. Photoresist compositions
JP4485913B2 (ja) 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
JP4682069B2 (ja) * 2006-03-17 2011-05-11 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4783657B2 (ja) * 2006-03-27 2011-09-28 富士フイルム株式会社 ポジ型レジスト組成物及び該組成物を用いたパターン形成方法
JP6100986B2 (ja) * 2006-10-30 2017-03-22 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法
JP5584980B2 (ja) * 2006-12-27 2014-09-10 三菱レイヨン株式会社 レジスト材料、レジスト組成物、微細パターンが形成された基板の製造方法、およびレジスト用重合体の製造方法
JP5151586B2 (ja) * 2007-03-23 2013-02-27 住友化学株式会社 フォトレジスト組成物
KR100933984B1 (ko) * 2007-11-26 2009-12-28 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물
JP5620627B2 (ja) * 2008-01-23 2014-11-05 三菱レイヨン株式会社 レジスト用重合体の製造方法、レジスト組成物、および微細パターンが形成された基板の製造方法
JP5500795B2 (ja) * 2008-07-03 2014-05-21 三菱レイヨン株式会社 レジスト材料、レジスト組成物、および微細パターンが形成された基板の製造方法
JP6056753B2 (ja) * 2012-03-05 2017-01-11 三菱レイヨン株式会社 リソグラフィー用共重合体およびその製造方法、レジスト組成物、ならびに基板の製造方法
JP5737242B2 (ja) * 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
KR101748097B1 (ko) * 2013-09-03 2017-06-15 미쯔비시 케미컬 주식회사 반도체 리소그래피용 공중합체, 레지스트 조성물 및 기판의 제조 방법
JP7198069B2 (ja) * 2017-12-22 2022-12-28 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11292822A (ja) * 1998-04-06 1999-10-26 Nec Corp １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
KR20000076528A (ko) * 1999-01-27 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010029715A (ko) * 1999-05-07 2001-04-16 무네유키 가코우 포지티브-작용 포토레지스트 조성물
JP2001125258A (ja) * 1999-08-16 2001-05-11 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
JPH11292822A (ja) * 1998-04-06 1999-10-26 Nec Corp １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP2000026446A (ja) * 1998-07-03 2000-01-25 Nec Corp ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
KR20000076528A (ko) * 1999-01-27 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010029715A (ko) * 1999-05-07 2001-04-16 무네유키 가코우 포지티브-작용 포토레지스트 조성물
JP2001125258A (ja) * 1999-08-16 2001-05-11 Shin Etsu Chem Co Ltd レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
JP4149148B2 (ja) 2008-09-10
TW574626B (en) 2004-02-01
JP2003043690A (ja) 2003-02-13
KR20030035826A (ko) 2003-05-09

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