TW574626B - Positive resist composition - Google Patents

Positive resist composition Download PDF

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Publication number
TW574626B
TW574626B TW91116877A TW91116877A TW574626B TW 574626 B TW574626 B TW 574626B TW 91116877 A TW91116877 A TW 91116877A TW 91116877 A TW91116877 A TW 91116877A TW 574626 B TW574626 B TW 574626B
Authority
TW
Taiwan
Prior art keywords
resist composition
positive resist
positive
composition
alicyclic
Prior art date
Application number
TW91116877A
Other languages
English (en)
Inventor
Kenichiro Sato
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19067723&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW574626(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW574626B publication Critical patent/TW574626B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Description

574626 六、申請專利範圍 鏈烷基或脂環式烴基， R22〜R25各表示獨立的碳數1〜4個直鏈或支鏈烷 基或脂環式烴基，R22〜R25中至少一個爲脂環式烴 基4，且R23與R24亦可互相連結形成環）。 -3-
TW91116877A 2001-08-03 2002-07-29 Positive resist composition TW574626B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001236460A JP4149148B2 (ja) 2001-08-03 2001-08-03 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
TW574626B true TW574626B (en) 2004-02-01

Family

ID=19067723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91116877A TW574626B (en) 2001-08-03 2002-07-29 Positive resist composition

Country Status (3)

Country Link
JP (1) JP4149148B2 (zh)
KR (1) KR100900468B1 (zh)
TW (1) TW574626B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385487B (zh) * 2004-08-02 2013-02-11 Az Electronic Materials Japan 光阻劑組合物

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
AU2003280710A1 (en) 2002-11-05 2004-06-07 Jsr Corporation Acrylic copolymer and radiation-sensitive resin composition
JP4225817B2 (ja) 2003-03-31 2009-02-18 富士フイルム株式会社 ポジ型レジスト組成物
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
US7704669B2 (en) 2003-08-05 2010-04-27 Jsr Corporation Acrylic polymer and radiation-sensitive resin composition
JP2011068648A (ja) * 2004-04-23 2011-04-07 Sumitomo Chemical Co Ltd 化学増幅型ポジ型レジスト組成物及び（メタ）アクリル酸誘導体とその製法
JP4485913B2 (ja) * 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
JP4682069B2 (ja) * 2006-03-17 2011-05-11 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4783657B2 (ja) * 2006-03-27 2011-09-28 富士フイルム株式会社 ポジ型レジスト組成物及び該組成物を用いたパターン形成方法
JP6100986B2 (ja) * 2006-10-30 2017-03-22 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法
JP5584980B2 (ja) * 2006-12-27 2014-09-10 三菱レイヨン株式会社 レジスト材料、レジスト組成物、微細パターンが形成された基板の製造方法、およびレジスト用重合体の製造方法
JP5151586B2 (ja) * 2007-03-23 2013-02-27 住友化学株式会社 フォトレジスト組成物
KR100933984B1 (ko) * 2007-11-26 2009-12-28 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물
JP5620627B2 (ja) * 2008-01-23 2014-11-05 三菱レイヨン株式会社 レジスト用重合体の製造方法、レジスト組成物、および微細パターンが形成された基板の製造方法
JP5500795B2 (ja) * 2008-07-03 2014-05-21 三菱レイヨン株式会社 レジスト材料、レジスト組成物、および微細パターンが形成された基板の製造方法
US9527938B2 (en) * 2012-03-05 2016-12-27 Mitsubishi Rayon Co., Ltd. Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate
JP5737242B2 (ja) * 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
CN105518041B (zh) * 2013-09-03 2019-08-30 三菱化学株式会社 半导体光刻用共聚物、抗蚀剂组合物以及基板的制造方法
JP7198069B2 (ja) * 2017-12-22 2022-12-28 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
JP3237605B2 (ja) * 1998-04-06 2001-12-10 日本電気株式会社 １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP3963602B2 (ja) * 1999-01-27 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP4336925B2 (ja) * 1999-08-16 2009-09-30 信越化学工業株式会社 レジスト材料及びパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385487B (zh) * 2004-08-02 2013-02-11 Az Electronic Materials Japan 光阻劑組合物

Also Published As

Publication number Publication date
JP4149148B2 (ja) 2008-09-10
KR100900468B1 (ko) 2009-06-03
JP2003043690A (ja) 2003-02-13
KR20030035826A (ko) 2003-05-09

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