JP4149148B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4149148B2
JP4149148B2 JP2001236460A JP2001236460A JP4149148B2 JP 4149148 B2 JP4149148 B2 JP 4149148B2 JP 2001236460 A JP2001236460 A JP 2001236460A JP 2001236460 A JP2001236460 A JP 2001236460A JP 4149148 B2 JP4149148 B2 JP 4149148B2
Authority
JP
Japan
Prior art keywords
group
acid
carbon atoms
alicyclic hydrocarbon
alkyl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001236460A
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English (en)
Japanese (ja)
Other versions
JP2003043690A5 (https=
JP2003043690A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19067723&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4149148(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001236460A priority Critical patent/JP4149148B2/ja
Priority to TW91116877A priority patent/TW574626B/zh
Priority to KR1020020045513A priority patent/KR100900468B1/ko
Publication of JP2003043690A publication Critical patent/JP2003043690A/ja
Publication of JP2003043690A5 publication Critical patent/JP2003043690A5/ja
Application granted granted Critical
Publication of JP4149148B2 publication Critical patent/JP4149148B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2001236460A 2001-08-03 2001-08-03 ポジ型レジスト組成物 Expired - Fee Related JP4149148B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001236460A JP4149148B2 (ja) 2001-08-03 2001-08-03 ポジ型レジスト組成物
TW91116877A TW574626B (en) 2001-08-03 2002-07-29 Positive resist composition
KR1020020045513A KR100900468B1 (ko) 2001-08-03 2002-08-01 ArF엑시머레이저 노광용 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001236460A JP4149148B2 (ja) 2001-08-03 2001-08-03 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2003043690A JP2003043690A (ja) 2003-02-13
JP2003043690A5 JP2003043690A5 (https=) 2006-01-19
JP4149148B2 true JP4149148B2 (ja) 2008-09-10

Family

ID=19067723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001236460A Expired - Fee Related JP4149148B2 (ja) 2001-08-03 2001-08-03 ポジ型レジスト組成物

Country Status (3)

Country Link
JP (1) JP4149148B2 (https=)
KR (1) KR100900468B1 (https=)
TW (1) TW574626B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
ATE481430T1 (de) 2002-11-05 2010-10-15 Jsr Corp Acrylcopolymer und strahlungsempfindliche harzzusammensetzung
JP4225817B2 (ja) 2003-03-31 2009-02-18 富士フイルム株式会社 ポジ型レジスト組成物
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP4765625B2 (ja) * 2003-08-05 2011-09-07 Ｊｓｒ株式会社 アクリル系重合体および感放射線性樹脂組成物
JP2011068648A (ja) * 2004-04-23 2011-04-07 Sumitomo Chemical Co Ltd 化学増幅型ポジ型レジスト組成物及び（メタ）アクリル酸誘導体とその製法
US7122291B2 (en) 2004-08-02 2006-10-17 Az Electronic Materials Usa Corp. Photoresist compositions
JP4485913B2 (ja) 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
JP4682069B2 (ja) * 2006-03-17 2011-05-11 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4783657B2 (ja) * 2006-03-27 2011-09-28 富士フイルム株式会社 ポジ型レジスト組成物及び該組成物を用いたパターン形成方法
JP6100986B2 (ja) * 2006-10-30 2017-03-22 三菱レイヨン株式会社 重合体の製造方法、レジスト組成物の製造方法、およびパターンが形成された基板の製造方法
JP5584980B2 (ja) * 2006-12-27 2014-09-10 三菱レイヨン株式会社 レジスト材料、レジスト組成物、微細パターンが形成された基板の製造方法、およびレジスト用重合体の製造方法
JP5151586B2 (ja) * 2007-03-23 2013-02-27 住友化学株式会社 フォトレジスト組成物
KR100933984B1 (ko) * 2007-11-26 2009-12-28 제일모직주식회사 신규 공중합체 및 이를 포함하는 레지스트 조성물
JP5620627B2 (ja) * 2008-01-23 2014-11-05 三菱レイヨン株式会社 レジスト用重合体の製造方法、レジスト組成物、および微細パターンが形成された基板の製造方法
JP5500795B2 (ja) * 2008-07-03 2014-05-21 三菱レイヨン株式会社 レジスト材料、レジスト組成物、および微細パターンが形成された基板の製造方法
JP6056753B2 (ja) * 2012-03-05 2017-01-11 三菱レイヨン株式会社 リソグラフィー用共重合体およびその製造方法、レジスト組成物、ならびに基板の製造方法
JP5737242B2 (ja) * 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
KR101748097B1 (ko) * 2013-09-03 2017-06-15 미쯔비시 케미컬 주식회사 반도체 리소그래피용 공중합체, 레지스트 조성물 및 기판의 제조 방법
JP7198069B2 (ja) * 2017-12-22 2022-12-28 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048661A (en) * 1997-03-05 2000-04-11 Shin-Etsu Chemical Co., Ltd. Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
JP3237605B2 (ja) * 1998-04-06 2001-12-10 日本電気株式会社 １，２−ジオール構造を有する脂環式（メタ）アクリレート誘導体、およびその重合体
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP3963602B2 (ja) * 1999-01-27 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP4336925B2 (ja) * 1999-08-16 2009-09-30 信越化学工業株式会社 レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
KR100900468B1 (ko) 2009-06-03
TW574626B (en) 2004-02-01
JP2003043690A (ja) 2003-02-13
KR20030035826A (ko) 2003-05-09

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