KR100889401B1 - 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체 - Google Patents

성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체 Download PDF

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KR100889401B1
KR100889401B1 KR1020077009588A KR20077009588A KR100889401B1 KR 100889401 B1 KR100889401 B1 KR 100889401B1 KR 1020077009588 A KR1020077009588 A KR 1020077009588A KR 20077009588 A KR20077009588 A KR 20077009588A KR 100889401 B1 KR100889401 B1 KR 100889401B1
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film
gas
substrate
processed
film forming
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KR20070058667A (ko
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야스히코 고지마
나오키 요시이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077009588A 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체 Expired - Fee Related KR100889401B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00312497 2004-10-27
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
PCT/JP2005/018287 WO2006046386A1 (ja) 2004-10-27 2005-10-03 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Related Child Applications (1)

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KR1020087027067A Division KR100922905B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치, 프로그램 및 기록매체

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Publication Number Publication Date
KR20070058667A KR20070058667A (ko) 2007-06-08
KR100889401B1 true KR100889401B1 (ko) 2009-03-20

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KR1020077009588A Expired - Fee Related KR100889401B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체
KR1020087027067A Expired - Fee Related KR100922905B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치, 프로그램 및 기록매체

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Country Status (5)

Country Link
US (1) US7846839B2 (https=)
JP (1) JP2006128288A (https=)
KR (2) KR100889401B1 (https=)
CN (1) CN100477119C (https=)
WO (1) WO2006046386A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008013848A (ja) * 2006-06-08 2008-01-24 Tokyo Electron Ltd 成膜装置及び成膜方法
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
KR102628795B1 (ko) * 2018-07-30 2024-01-25 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023989A (ja) * 1999-03-09 2001-01-26 Applied Materials Inc 化学気相堆積により堆積した銅の密着性を高める方法
KR20010094343A (ko) * 2000-04-06 2001-10-31 김응수 화학기상증착 장치 및 그 방법
JP2002203859A (ja) * 2000-11-02 2002-07-19 Ebara Corp 配線形成方法及び半導体装置
KR20030056677A (ko) * 2001-12-28 2003-07-04 지니텍 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템

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US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6249055B1 (en) * 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
JP4155372B2 (ja) 1999-03-08 2008-09-24 株式会社トリケミカル研究所 配線膜形成方法
EP2017369A1 (en) * 1999-11-02 2009-01-21 University of Massachusetts Chemical fluid deposition for the formation of metal and metal alloy films on patterned and unpatterned substrates
JP4083968B2 (ja) * 2000-11-02 2008-04-30 株式会社東芝 半導体装置の製造方法
US20020090814A1 (en) 2000-11-02 2002-07-11 Hiroaki Inoue Method for forming interconnects and semiconductor device
KR100420598B1 (ko) * 2001-11-28 2004-03-02 동부전자 주식회사 알루미늄을 이용한 구리 확산 방지 막 형성방법
JP4007822B2 (ja) * 2002-02-14 2007-11-14 富士通株式会社 配線構造の形成方法
US6911229B2 (en) * 2002-08-09 2005-06-28 International Business Machines Corporation Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof
JP2004193499A (ja) 2002-12-13 2004-07-08 Applied Materials Inc 半導体装置、その製造方法、及びその製造装置
CN1426092A (zh) * 2003-01-02 2003-06-25 上海华虹（集团）有限公司 化学气相法淀积氮化钛和铜金属层大马士革工艺
WO2004068576A2 (en) * 2003-01-23 2004-08-12 Advanced Micro Devices, Inc. Method of forming a catalyst containing layer over a patterned dielectric

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023989A (ja) * 1999-03-09 2001-01-26 Applied Materials Inc 化学気相堆積により堆積した銅の密着性を高める方法
KR20010094343A (ko) * 2000-04-06 2001-10-31 김응수 화학기상증착 장치 및 그 방법
JP2002203859A (ja) * 2000-11-02 2002-07-19 Ebara Corp 配線形成方法及び半導体装置
KR20030056677A (ko) * 2001-12-28 2003-07-04 지니텍 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템

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KR20070058667A (ko) 2007-06-08
US7846839B2 (en) 2010-12-07
JP2006128288A (ja) 2006-05-18
KR100922905B1 (ko) 2009-10-22
US20090032950A1 (en) 2009-02-05
CN101065836A (zh) 2007-10-31
WO2006046386A1 (ja) 2006-05-04
CN100477119C (zh) 2009-04-08
KR20080106373A (ko) 2008-12-04

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