JP2006128288A - 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 - Google Patents

成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 Download PDF

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Publication number
JP2006128288A
JP2006128288A JP2004312497A JP2004312497A JP2006128288A JP 2006128288 A JP2006128288 A JP 2006128288A JP 2004312497 A JP2004312497 A JP 2004312497A JP 2004312497 A JP2004312497 A JP 2004312497A JP 2006128288 A JP2006128288 A JP 2006128288A
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Japan
Prior art keywords
film
film forming
gas
substrate
processed
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Pending
Application number
JP2004312497A
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English (en)
Japanese (ja)
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JP2006128288A5 (https=
Inventor
Yasuhiko Kojima
康彦 小島
直樹 ▲吉▼井
Naoki Yoshii
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004312497A priority Critical patent/JP2006128288A/ja
Priority to CNB2005800371462A priority patent/CN100477119C/zh
Priority to KR1020077009588A priority patent/KR100889401B1/ko
Priority to KR1020087027067A priority patent/KR100922905B1/ko
Priority to US11/718,100 priority patent/US7846839B2/en
Priority to PCT/JP2005/018287 priority patent/WO2006046386A1/ja
Publication of JP2006128288A publication Critical patent/JP2006128288A/ja
Publication of JP2006128288A5 publication Critical patent/JP2006128288A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004312497A 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体 Pending JP2006128288A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
CNB2005800371462A CN100477119C (zh) 2004-10-27 2005-10-03 成膜方法、半导体装置的制造方法、半导体装置和成膜装置
KR1020077009588A KR100889401B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체
KR1020087027067A KR100922905B1 (ko) 2004-10-27 2005-10-03 성막 방법, 반도체 장치의 제조 방법, 반도체 장치, 프로그램 및 기록매체
US11/718,100 US7846839B2 (en) 2004-10-27 2005-10-03 Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium
PCT/JP2005/018287 WO2006046386A1 (ja) 2004-10-27 2005-10-03 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004312497A JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Publications (2)

Publication Number Publication Date
JP2006128288A true JP2006128288A (ja) 2006-05-18
JP2006128288A5 JP2006128288A5 (https=) 2007-11-22

Family

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JP2004312497A Pending JP2006128288A (ja) 2004-10-27 2004-10-27 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体

Country Status (5)

Country Link
US (1) US7846839B2 (https=)
JP (1) JP2006128288A (https=)
KR (2) KR100889401B1 (https=)
CN (1) CN100477119C (https=)
WO (1) WO2006046386A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142329A1 (ja) * 2006-06-08 2007-12-13 Tokyo Electron Limited 成膜装置、成膜方法、コンピュータプログラムおよび記憶媒体
JP2008057042A (ja) * 2006-09-01 2008-03-13 Asm Japan Kk 金属配線構造用のルテニウム膜の形成方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
KR102628795B1 (ko) * 2018-07-30 2024-01-25 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 표시 장치

Citations (5)

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JP2001023989A (ja) * 1999-03-09 2001-01-26 Applied Materials Inc 化学気相堆積により堆積した銅の密着性を高める方法
JP2002203859A (ja) * 2000-11-02 2002-07-19 Ebara Corp 配線形成方法及び半導体装置
JP2003514115A (ja) * 1999-11-02 2003-04-15 ユニバーシティー オブ マサチューセッツ パターン基板およびパターンなし基板上に金属および金属合金被膜を形成するための化学流体被着
US20040028882A1 (en) * 2002-08-09 2004-02-12 Andricacos Panayotis C. Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof
WO2004068576A2 (en) * 2003-01-23 2004-08-12 Advanced Micro Devices, Inc. Method of forming a catalyst containing layer over a patterned dielectric

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JP4155372B2 (ja) 1999-03-08 2008-09-24 株式会社トリケミカル研究所 配線膜形成方法
KR100358952B1 (ko) * 2000-04-06 2002-10-31 주식회사 에버테크 화학기상증착 장치 및 그 방법
JP4083968B2 (ja) * 2000-11-02 2008-04-30 株式会社東芝 半導体装置の製造方法
US20020090814A1 (en) 2000-11-02 2002-07-11 Hiroaki Inoue Method for forming interconnects and semiconductor device
KR100420598B1 (ko) * 2001-11-28 2004-03-02 동부전자 주식회사 알루미늄을 이용한 구리 확산 방지 막 형성방법
KR100805843B1 (ko) * 2001-12-28 2008-02-21 에이에스엠지니텍코리아 주식회사 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템
JP4007822B2 (ja) * 2002-02-14 2007-11-14 富士通株式会社 配線構造の形成方法
JP2004193499A (ja) 2002-12-13 2004-07-08 Applied Materials Inc 半導体装置、その製造方法、及びその製造装置
CN1426092A (zh) * 2003-01-02 2003-06-25 上海华虹（集团）有限公司 化学气相法淀积氮化钛和铜金属层大马士革工艺

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023989A (ja) * 1999-03-09 2001-01-26 Applied Materials Inc 化学気相堆積により堆積した銅の密着性を高める方法
JP2003514115A (ja) * 1999-11-02 2003-04-15 ユニバーシティー オブ マサチューセッツ パターン基板およびパターンなし基板上に金属および金属合金被膜を形成するための化学流体被着
JP2002203859A (ja) * 2000-11-02 2002-07-19 Ebara Corp 配線形成方法及び半導体装置
US20040028882A1 (en) * 2002-08-09 2004-02-12 Andricacos Panayotis C. Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereof
WO2004068576A2 (en) * 2003-01-23 2004-08-12 Advanced Micro Devices, Inc. Method of forming a catalyst containing layer over a patterned dielectric

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142329A1 (ja) * 2006-06-08 2007-12-13 Tokyo Electron Limited 成膜装置、成膜方法、コンピュータプログラムおよび記憶媒体
JP2008057042A (ja) * 2006-09-01 2008-03-13 Asm Japan Kk 金属配線構造用のルテニウム膜の形成方法

Also Published As

Publication number Publication date
KR20070058667A (ko) 2007-06-08
US7846839B2 (en) 2010-12-07
KR100922905B1 (ko) 2009-10-22
US20090032950A1 (en) 2009-02-05
CN101065836A (zh) 2007-10-31
WO2006046386A1 (ja) 2006-05-04
KR100889401B1 (ko) 2009-03-20
CN100477119C (zh) 2009-04-08
KR20080106373A (ko) 2008-12-04

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