KR100888525B1 - 후막형성용 포지티브형 포토레지스트조성물 - Google Patents
후막형성용 포지티브형 포토레지스트조성물 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
Description
2,4-비스(트리클로로메틸)-6-피페로닐-l,3,5-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(2-푸릴)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(5-메틸-2-푸릴)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(5-에틸-2-푸릴)에테닐]-s-트리아진,
2,4-피스(트리클로로메틸)-6-[2-(5-프로필-2-푸릴)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3,5-디메톡시페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3,5-디에톡시페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3,5-디프로폭시페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3-메톡시-5-에톡시 페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3-메톡시-5-프로폭시페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-[2-(3,4-메틸렌디옥시페닐)에테닐]-s-트리아진,
2,4-비스(트리클로로메틸)-6-(3,4-메틸렌디옥시페닐)-s-트리아진,
2,4-비스-(트리클로로메틸)-6-(3-브로모-4-메톡시)페닐-s-트리아진,
2,4-비스(트리클로로메틸)-6-(2-브로모-4-메톡시)페닐-s-트리아진,
2,4-비스(트리클로로메틸)-6-(2-브로모-4-메톡시)스티릴페닐-s-트리아진,
2,4-비스(트리클로로메틸)-6-(3-브로모-4-메톡시)스티릴페닐-s-트리아진,
2-(4-메톡시페닐)-4,6-비스(트리클로로메틸)-1,3,5-트리아진,
2-(4-메톡시나프틸)-4,6-비스(트리클로로메틸)-l,3,5-트리아진,
2-[2-(2-푸릴)에테닐]-4,6-비스(트리클로로메틸)-1,3,5-트리아진,
2-[2-(5-메틸-2-푸릴)에테닐]-4,6-비스(트리클로로메틸)-1,3,5-트리아진,
2-[2-(3,5-디메톡시페닐)에테닐]-4,6-비스(트리클로로메틸)-1,3,5-트리아진,
2-[2-(3,4-디메톡시페닐)에테닐]-4,6-비스(트리클로로메틸)-l,3,5-트리아진,
2-(3,4-메틸렌디옥시페닐)-4,6-비스(트리클로로메틸)-1,3,5-트리아진,
트리스(1,3-디브로모프로필)-1,3,5-트리아진,
트리스(2,3-디브로모프로필)-1,3,5-트리아진 등의 할로겐 함유 트리아진 화합물이나 트리스(2,3-디브로모프로필) 이소시아누레이트를 들 수 있다.
α-(p-톨루엔술포닐옥시이미노)-페닐아세토니트릴,
α-(벤젠술포닐옥시이미노)-2,4-디클로로페닐아세토니트릴,
α-(벤젠술포닐옥시이미노)-2,6-디클로로페닐아세토니트릴,
α-(2-클로로벤젠술포닐옥시이미노)-4-메톡시페닐아세토니트릴,
α-(에틸술포닐옥시이미노)-1-시클로펜테닐아세토니트릴등을 들 수 있고,
특히 n이 1이며, R6가 페닐기, 메틸페닐기 또는 메톡시페닐기이며, R7이 메틸기의 화합물, 예를 들어, α-(메틸술포닐옥시이미노)-1-페닐아세토니트릴, α-(메틸술포닐옥시이미노)-1-(4-메틸페닐)아세토니트릴, α-(메틸술포닐옥시이미노)-1-(4-메톡시페닐)아세토니트릴이 바람직하다.
비스(p-톨루엔술포닐) 디아조메탄, 비스(1,1-디메틸에틸술포닐) 디아조메탄, 비스(시클로헥실술포닐) 디아조메탄, 비스(2,4-디메틸페닐술포닐) 디아조메탄 등의 비스(술포닐) 디아조메탄류나;
p-톨루엔 술폰산 2-니트로벤질, p-톨루엔 술폰산 2,6-디니트로벤질, 니트로벤질토실레이트, 디니트로벤질토실레이트, 니트로벤질술포네이트, 니트로벤질카보네이트, 디니트로벤질카보네이트 등의 니트로벤질 유도체나;
피로갈롤트리메실레이트, 피로갈롤트리토실레이트, 벤질토실레이트, 벤질술포네이트, (N-메틸술포닐옥시)숙신이미드, (N-트리클로로메틸술포닐옥시)숙신이미드, (N-페닐술포닐옥시)말레이미드, (N-메틸술포닐옥시)프탈이미드 등의 술폰산 에스테르나;
(N-히드록시)프탈이미드, (N-히드록시)나프탈이미드 등의 트리플루오르메탄 술폰산에스테르나;
디페닐아이오도늄 헥사플루오로포스페이트, (4-메톡시페닐)페닐아이오도늄 트리플루오로메탄술포네이트, 비스(4-tert-부틸페닐)아이오도늄 트리플루오로메탄술포네이트, 트리페닐술포늄헥사플루오로포스페이트, (4-메톡시페닐)디페닐술포늄 트리플루오로메탄술포네이트, (4-tert-부틸페닐)디페닐술포늄 트리플루오로메탄술포네이트 등의 오늄염이나;
벤조인토실레이트,α-메틸벤조인토실레이트 등의 벤조인토실레이트류나;
그 외의 디페닐아이오도늄염, 트리페닐술포늄염, 페닐디아조늄염, 벤질카보네이트 등도 이용할 수 있다.
(C1)성분중의 히드록시스티렌단위의 함유량(질량%) | (B)성분과 (C)성분의 합계 100질량부에 대한 (C1)성분의 질량비율 | 물성 | |||||
도포성 | 현상성 (mJ/㎠) | 내도금액성 | 박리성 | ||||
23℃ | 70℃ | ||||||
실시예 1 | 100 | 10 | B | 400 | 양호 | A | A |
실시예 2 | 90 | 10 | B | 400 | 양호 | A | A |
실시예 3 | 100 | 10 | A | 200 | 양호 | A | A |
실시예 4 | 100 | 13 | A | 200 | 양호 | A | A |
실시예 5 | 90 | 10 | A | 200 | 양호 | A | A |
실시예 6 | 80 | 10 | A | 400 | 양호 | A | A |
비교예 1 | 100 | 17 | C | 200 | 양호 | A | A |
비교예 2 | 70 | 10 | A | 600 | 양호 | B | A |
비교예 3 | 50 | 10 | A | 1000 | 양호 | C | A |
실시예 | 성분(A)* | 성분(B) | 물성 | ||||
도포성 | 현상성 (mJ/㎠) | 내도금액성 | 박리성 | ||||
23℃ | 70℃ | ||||||
7 | A-2 | B-2 | A | 200 | 양호 | A | A |
8 | A-1 | B-3 | A | 200 | 양호 | A | A |
9 | A-1 | B-4 | A | 400 | 양호 | A | A |
10 | A-1 | B-5 | A | 400 | 양호 | A | A |
*A-l:(5-프로필렌술포닐옥시이미노-5H-티오펜-2-일리덴)-(2-메틸페닐)아세토니트릴 *A-2: 1,3-비스(부틸술포닐옥시이미노-α-시아노메틸) 벤젠 |
Claims (4)
- 기판의 표면에 포토레지스트층을 형성하기 위한, (A) 광산발생제, (B) 산의 작용에 의해 알칼리 용해성이 증대할 수 있는 알칼리불용성 수지, (C) 알칼리 가용성 수지 및 (D) 유기용제를 함유하는 후막형성용 포지티브형 포토레지스트 조성물에 있어서,상기 (C)성분은, 히드록시스티렌 단위를 적어도 80 질량%를 함유한 공중합체 또는 폴리히드록시스티렌(C1)과 노볼락수지(C2)와의 조합을 포함하되, 상기 (B)성분과 (C)성분의 합계 100질량부에 대한 상기 (C1)성분의 함유비율이 15질량부를 초과하지 않는 것을 특징으로 하는 후막형성용 포지티브형 포토레지스트 조성물.
- 삭제
- 제 1 항에 있어서,상기 (D)성분은 프로필렌글리콜 메틸 에테르 아세테이트, 또는 프로필렌글리콜 메틸 에테르 아세테이트와 다른 유기 용제와의 혼합물인 것을 특징으로 하는 후막형성용 포지티브형 포토레지스트 조성물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00084827 | 2005-03-23 | ||
JP2005084827A JP4499591B2 (ja) | 2005-03-23 | 2005-03-23 | 厚膜形成用化学増幅型ポジ型ホトレジスト組成物 |
PCT/JP2006/306389 WO2006101250A1 (en) | 2005-03-23 | 2006-03-22 | Positive-working photoresist composition for thick film formation |
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US7700259B2 (en) * | 2004-04-13 | 2010-04-20 | Tokyo Ohka Kogyo Co., Ltd. | Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern |
JP2008077057A (ja) * | 2006-08-21 | 2008-04-03 | Jsr Corp | 感光性絶縁樹脂組成物及びその硬化物並びにそれを備える電子部品 |
JP4884951B2 (ja) * | 2006-12-15 | 2012-02-29 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法 |
KR20090049862A (ko) * | 2007-11-14 | 2009-05-19 | 주식회사 동진쎄미켐 | 감광성 화합물 및 이를 포함하는 포토레지스트 조성물 |
US9057951B2 (en) * | 2009-08-26 | 2015-06-16 | International Business Machines Corporation | Chemically amplified photoresist composition and process for its use |
JP5788407B2 (ja) * | 2009-12-11 | 2015-09-30 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 塩基反応性成分を含む組成物およびフォトリソグラフィのための方法 |
JP5498874B2 (ja) * | 2010-06-28 | 2014-05-21 | 東京応化工業株式会社 | ポジ型感光性樹脂組成物 |
JP6569466B2 (ja) | 2015-10-27 | 2019-09-04 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びパターン形成方法 |
CN110133965B (zh) * | 2018-02-09 | 2023-04-07 | 台湾永光化学工业股份有限公司 | 化学增幅型正型光阻组合物 |
US11131927B2 (en) * | 2018-05-09 | 2021-09-28 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive-type photosensitive resin composition, photosensitive dry film, method of manufacturing photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template and method of manufacturing plated article |
JP7141260B2 (ja) * | 2018-06-27 | 2022-09-22 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法、めっき造形物の製造方法及び含窒素芳香族複素環化合物 |
KR20220101662A (ko) | 2019-11-14 | 2022-07-19 | 메르크 파텐트 게엠베하 | 알칼리-가용성 아크릴 수지를 포함하는 dnq-타입 포토레지스트 조성물 |
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US9436084B2 (en) | 2016-09-06 |
EP1861751B1 (en) | 2010-11-24 |
JP2006267475A (ja) | 2006-10-05 |
CN101142530B (zh) | 2010-11-24 |
EP1861751A1 (en) | 2007-12-05 |
US20080026321A1 (en) | 2008-01-31 |
JP4499591B2 (ja) | 2010-07-07 |
CN101142530A (zh) | 2008-03-12 |
WO2006101250A1 (en) | 2006-09-28 |
TW200641538A (en) | 2006-12-01 |
KR20070112884A (ko) | 2007-11-27 |
DE602006018433D1 (de) | 2011-01-05 |
TWI301929B (en) | 2008-10-11 |
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