KR20070112884A - 후막형성용 포지티브형 포토레지스트조성물 - Google Patents
후막형성용 포지티브형 포토레지스트조성물 Download PDFInfo
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- KR20070112884A KR20070112884A KR1020077024201A KR20077024201A KR20070112884A KR 20070112884 A KR20070112884 A KR 20070112884A KR 1020077024201 A KR1020077024201 A KR 1020077024201A KR 20077024201 A KR20077024201 A KR 20077024201A KR 20070112884 A KR20070112884 A KR 20070112884A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
- C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
(C1)성분중의 히드록시스티렌단위의 함유량(질량%) | (B)성분과 (C)성분의 합계 100질량부에 대한 (C1)성분의 질량비율 | 물성 | |||||
도포성 | 현상성 (mJ/cm2) | 내도금액성 | 박리성 | ||||
23℃ | 70℃ | ||||||
실시예 1 | 100 | 10 | B | 400 | 양호 | A | A |
실시예 2 | 90 | 10 | B | 400 | 양호 | A | A |
실시예 3 | 100 | 10 | A | 200 | 양호 | A | A |
실시예 4 | 100 | 13 | A | 200 | 양호 | A | A |
실시예 5 | 90 | 10 | A | 200 | 양호 | A | A |
실시예 6 | 80 | 10 | A | 400 | 양호 | A | A |
비교예 1 | 100 | 17 | C | 200 | 양호 | A | A |
비교예 2 | 70 | 10 | A | 600 | 양호 | B | A |
비교예 3 | 50 | 10 | A | 1000 | 양호 | C | A |
실시예 | 성분(A)* | 성분(B) | 물성 | ||||
도포성 | 현상성 (mJ/cm2) | 내도금액성 | 박리성 | ||||
23℃ | 70℃ | ||||||
7 | A-2 | B-2 | A | 200 | 양호 | A | A |
8 | A-1 | B-3 | A | 200 | 양호 | A | A |
9 | A-1 | B-4 | A | 400 | 양호 | A | A |
10 | A-1 | B-5 | A | 400 | 양호 | A | A |
Claims (4)
- 기판의 표면에 포토레지스트층을 형성하기 위한, (A)광산발생제, (B)산의 작용에 의해 알칼리 용해성이 증대할 수 있는 알칼리불용성 수지, (C)알칼리 가용성 수지 및 (D)유기용제를 함유한 화학증폭형 포지티브형 포토레지스트조성물로서,상기 (C)성분은, (B)성분과 (C)성분의 합계의 100질량부에 대한 (C1)성분의 함유비율이 15질량부를 초과하지 않는 조건하에, 히드록시스티렌 단위를 적어도 80 질량%를 함유한 공중합체 또는 폴리히드록시스티렌(C1)을 포함하는 것을 특징으로 하는 화학증폭형 포지티브형 포토레지스트조성물.
- 제 1 항에 있어서,상기 (C)성분이 상기 성분 (C1) 및 노볼락수지(C2)의 조합인 것을 특징으로 하는 화학증폭형 포지티브형 포토레지스트조성물.
- 제 1 항에 있어서,상기 (D)성분이 프로필렌글리콜 메틸 에테르 아세테이트 또는 그것과 다른 유기용제와의 혼합물인 것을 특징으로 하는 화학증폭형 포지티브형 포토레지스트조성물.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00084827 | 2005-03-23 | ||
JP2005084827A JP4499591B2 (ja) | 2005-03-23 | 2005-03-23 | 厚膜形成用化学増幅型ポジ型ホトレジスト組成物 |
PCT/JP2006/306389 WO2006101250A1 (en) | 2005-03-23 | 2006-03-22 | Positive-working photoresist composition for thick film formation |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070112884A true KR20070112884A (ko) | 2007-11-27 |
KR100888525B1 KR100888525B1 (ko) | 2009-03-11 |
Family
ID=36586122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077024201A KR100888525B1 (ko) | 2005-03-23 | 2006-03-22 | 후막형성용 포지티브형 포토레지스트조성물 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9436084B2 (ko) |
EP (1) | EP1861751B1 (ko) |
JP (1) | JP4499591B2 (ko) |
KR (1) | KR100888525B1 (ko) |
CN (1) | CN101142530B (ko) |
DE (1) | DE602006018433D1 (ko) |
TW (1) | TWI301929B (ko) |
WO (1) | WO2006101250A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120001618A (ko) * | 2010-06-28 | 2012-01-04 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 감광성 수지 조성물 |
KR20200001518A (ko) * | 2018-06-27 | 2020-01-06 | 도오꾜오까고오교 가부시끼가이샤 | 화학 증폭형 포지티브형 감광성 수지 조성물, 감광성 드라이 필름, 감광성 드라이 필름의 제조 방법, 패턴화된 레지스트막의 제조 방법, 주형 부착 기판의 제조 방법, 도금 조형물의 제조 방법 및 함질소 방향족 복소 고리 화합물 |
Families Citing this family (11)
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JP2005232388A (ja) * | 2004-02-20 | 2005-09-02 | Tokyo Ohka Kogyo Co Ltd | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
KR100848031B1 (ko) * | 2004-04-13 | 2008-07-23 | 도오꾜오까고오교 가부시끼가이샤 | 고분자 화합물, 이 고분자 화합물을 함유하는 포토레지스트조성물, 및 레지스트 패턴 형성 방법 |
JP2008077057A (ja) * | 2006-08-21 | 2008-04-03 | Jsr Corp | 感光性絶縁樹脂組成物及びその硬化物並びにそれを備える電子部品 |
JP4884951B2 (ja) * | 2006-12-15 | 2012-02-29 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法 |
KR20090049862A (ko) * | 2007-11-14 | 2009-05-19 | 주식회사 동진쎄미켐 | 감광성 화합물 및 이를 포함하는 포토레지스트 조성물 |
US9057951B2 (en) | 2009-08-26 | 2015-06-16 | International Business Machines Corporation | Chemically amplified photoresist composition and process for its use |
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JP6569466B2 (ja) | 2015-10-27 | 2019-09-04 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びパターン形成方法 |
CN110133965B (zh) * | 2018-02-09 | 2023-04-07 | 台湾永光化学工业股份有限公司 | 化学增幅型正型光阻组合物 |
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EP4058847A1 (en) | 2019-11-14 | 2022-09-21 | Merck Patent GmbH | Dnq-type photoresist composition including alkali-soluble acrylic resins |
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2005
- 2005-03-23 JP JP2005084827A patent/JP4499591B2/ja active Active
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2006
- 2006-03-22 KR KR1020077024201A patent/KR100888525B1/ko active IP Right Grant
- 2006-03-22 US US11/792,752 patent/US9436084B2/en active Active
- 2006-03-22 CN CN2006800088463A patent/CN101142530B/zh active Active
- 2006-03-22 EP EP06730337A patent/EP1861751B1/en active Active
- 2006-03-22 DE DE602006018433T patent/DE602006018433D1/de active Active
- 2006-03-22 TW TW095109870A patent/TWI301929B/zh active
- 2006-03-22 WO PCT/JP2006/306389 patent/WO2006101250A1/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120001618A (ko) * | 2010-06-28 | 2012-01-04 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 감광성 수지 조성물 |
KR20200001518A (ko) * | 2018-06-27 | 2020-01-06 | 도오꾜오까고오교 가부시끼가이샤 | 화학 증폭형 포지티브형 감광성 수지 조성물, 감광성 드라이 필름, 감광성 드라이 필름의 제조 방법, 패턴화된 레지스트막의 제조 방법, 주형 부착 기판의 제조 방법, 도금 조형물의 제조 방법 및 함질소 방향족 복소 고리 화합물 |
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JP2006267475A (ja) | 2006-10-05 |
WO2006101250A1 (en) | 2006-09-28 |
US9436084B2 (en) | 2016-09-06 |
TW200641538A (en) | 2006-12-01 |
JP4499591B2 (ja) | 2010-07-07 |
EP1861751B1 (en) | 2010-11-24 |
EP1861751A1 (en) | 2007-12-05 |
TWI301929B (en) | 2008-10-11 |
KR100888525B1 (ko) | 2009-03-11 |
CN101142530A (zh) | 2008-03-12 |
DE602006018433D1 (de) | 2011-01-05 |
CN101142530B (zh) | 2010-11-24 |
US20080026321A1 (en) | 2008-01-31 |
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