KR100845178B1 - 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 Download PDF

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Publication number
KR100845178B1
KR100845178B1 KR1020037016901A KR20037016901A KR100845178B1 KR 100845178 B1 KR100845178 B1 KR 100845178B1 KR 1020037016901 A KR1020037016901 A KR 1020037016901A KR 20037016901 A KR20037016901 A KR 20037016901A KR 100845178 B1 KR100845178 B1 KR 100845178B1
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South Korea
Prior art keywords
electrode
plasma
gas
gas supply
processing apparatus
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English (en)
Korean (ko)
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KR20040021617A (ko
Inventor
키요시 아리타
테츠히로 이와이
히로시 하지
쇼지 사케미
타이지 마타노
노부히로 사토우
Original Assignee
마쯔시다덴기산교 가부시키가이샤
구로사키 하리마 코포레이션
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Publication of KR20040021617A publication Critical patent/KR20040021617A/ko
Application granted granted Critical
Publication of KR100845178B1 publication Critical patent/KR100845178B1/ko
Assigned to 파나소닉 주식회사 reassignment 파나소닉 주식회사 권리지분의 전부이전등록 Assignors: 구로사키 하리마 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020037016901A 2001-06-25 2002-06-24 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 Expired - Fee Related KR100845178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001190891A JP2003007682A (ja) 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材
JPJP-P-2001-00190891 2001-06-25
PCT/JP2002/006293 WO2003001557A1 (en) 2001-06-25 2002-06-24 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method

Publications (2)

Publication Number Publication Date
KR20040021617A KR20040021617A (ko) 2004-03-10
KR100845178B1 true KR100845178B1 (ko) 2008-07-10

Family

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Family Applications (1)

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KR1020037016901A Expired - Fee Related KR100845178B1 (ko) 2001-06-25 2002-06-24 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법

Country Status (8)

Country Link
US (1) US7138034B2 (https=)
JP (1) JP2003007682A (https=)
KR (1) KR100845178B1 (https=)
CN (1) CN1302512C (https=)
DE (1) DE10296978B4 (https=)
MY (1) MY142898A (https=)
TW (1) TW559942B (https=)
WO (1) WO2003001557A1 (https=)

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US7074720B2 (en) * 2001-06-25 2006-07-11 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
KR100622831B1 (ko) 2004-04-13 2006-09-18 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2006120822A (ja) * 2004-10-21 2006-05-11 Tokyo Electron Ltd 基板処理装置及び基板処理装置の圧力制御方法
WO2006107113A1 (en) 2005-04-05 2006-10-12 Matsushita Electric Industrial Co., Ltd. Strain relief cutouts in shower plate made from porous ceramic
JP4654738B2 (ja) * 2005-04-05 2011-03-23 パナソニック株式会社 プラズマ処理装置
JP4619854B2 (ja) * 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
JP5835722B2 (ja) 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
CN103169199A (zh) * 2013-03-15 2013-06-26 苏州卫鹏机电科技有限公司 一种鞋材表面等离子体放电处理设备的真空箱
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
TWI584706B (zh) * 2014-07-24 2017-05-21 Uvat Technology Co Ltd A plasma etch device for a printed circuit board
CN104835876B (zh) * 2015-04-27 2018-01-05 北京金晟阳光科技有限公司 气体均匀布气装置
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
IT201700083957A1 (it) * 2017-07-24 2019-01-24 Wise S R L Metodo e apparato per il trattamento di pannelli
JP7680361B2 (ja) * 2019-03-08 2025-05-20 アプライド マテリアルズ インコーポレイテッド 処理チャンバ用の多孔性シャワーヘッド
KR102405333B1 (ko) 2020-11-25 2022-06-07 (주)이노플라즈텍 평판형 필터 전극을 이용한 분말 표면처리용 플라즈마 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
EP0421686A2 (en) * 1989-10-02 1991-04-10 Tokai Carbon Company, Ltd. Electrode plate for plasma etching
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure

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Publication number Priority date Publication date Assignee Title
JPS586134A (ja) 1981-07-03 1983-01-13 Seiko Epson Corp プラズマエツチング装置
JPS59111967A (ja) 1982-12-17 1984-06-28 株式会社ブリヂストン セラミック多孔体
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS60171220A (ja) 1984-02-14 1985-09-04 Nippon Cement Co Ltd アルミナ多孔体の製造方法
US4664858A (en) 1984-08-21 1987-05-12 Kurosaki Refractories Co., Ltd. Manufacturing method of a ceramics body having through holes
JPS61278144A (ja) 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
AT386316B (de) 1985-11-11 1988-08-10 Voest Alpine Ag Plasmareaktor zum aetzen von leiterplatten
JPS63282179A (ja) 1987-05-12 1988-11-18 Nippon Steel Corp 多孔質セラミックスの製造方法
JPH03101126A (ja) 1989-09-13 1991-04-25 Eagle Ind Co Ltd プラズマエッチング装置用電極
JPH0437124A (ja) * 1990-06-01 1992-02-07 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2837993B2 (ja) 1992-06-19 1998-12-16 松下電工株式会社 プラズマ処理方法およびその装置
JP3173928B2 (ja) 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH0797690A (ja) * 1993-09-29 1995-04-11 Toppan Printing Co Ltd プラズマｃｖｄ装置
KR100193356B1 (ko) * 1994-03-31 1999-06-15 이사오 우치가사키 다공질체의 제조 방법
JPH08209349A (ja) * 1995-02-06 1996-08-13 Kokusai Electric Co Ltd プラズマｃｖｄ装置
DE19505906A1 (de) 1995-02-21 1996-08-22 Siemens Ag Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite
WO1996031997A1 (en) 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
AU727973B2 (en) * 1996-05-15 2001-01-04 Hyperion Catalysis International Inc. Rigid porous carbon structures, methods of making, methods of using and products containing same
CA2205817C (en) 1996-05-24 2004-04-06 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
FR2756668B1 (fr) * 1996-12-02 1999-01-08 Accumulateurs Fixes Electrode a support tridimensionnel poreux
JPH11135442A (ja) * 1997-10-31 1999-05-21 Canon Inc 堆積膜形成装置及び堆積膜形成方法
JPH11283973A (ja) 1998-03-27 1999-10-15 Toshiba Ceramics Co Ltd プラズマエッチング装置用電極の製造方法
JP3695184B2 (ja) * 1998-12-03 2005-09-14 松下電器産業株式会社 プラズマエッチング装置およびプラズマエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
EP0421686A2 (en) * 1989-10-02 1991-04-10 Tokai Carbon Company, Ltd. Electrode plate for plasma etching
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure

Also Published As

Publication number Publication date
DE10296978T5 (de) 2004-10-07
CN1302512C (zh) 2007-02-28
TW559942B (en) 2003-11-01
US20020195202A1 (en) 2002-12-26
DE10296978B4 (de) 2010-03-04
CN1520604A (zh) 2004-08-11
JP2003007682A (ja) 2003-01-10
KR20040021617A (ko) 2004-03-10
MY142898A (en) 2011-01-31
WO2003001557A1 (en) 2003-01-03
US7138034B2 (en) 2006-11-21

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