KR100839721B1 - 마스크 블랭크용 유리 기판 제조 방법 및 마스크 블랭크제조 방법 - Google Patents
마스크 블랭크용 유리 기판 제조 방법 및 마스크 블랭크제조 방법 Download PDFInfo
- Publication number
- KR100839721B1 KR100839721B1 KR1020040021037A KR20040021037A KR100839721B1 KR 100839721 B1 KR100839721 B1 KR 100839721B1 KR 1020040021037 A KR1020040021037 A KR 1020040021037A KR 20040021037 A KR20040021037 A KR 20040021037A KR 100839721 B1 KR100839721 B1 KR 100839721B1
- Authority
- KR
- South Korea
- Prior art keywords
- glass substrate
- polishing
- mask blank
- flatness
- euv
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 218
- 239000011521 glass Substances 0.000 title claims abstract description 210
- 238000000034 method Methods 0.000 title claims description 39
- 238000012545 processing Methods 0.000 claims abstract description 135
- 238000005498 polishing Methods 0.000 claims abstract description 134
- 239000007788 liquid Substances 0.000 claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 claims abstract description 40
- 238000005259 measurement Methods 0.000 claims abstract description 16
- 230000009471 action Effects 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 52
- 239000007864 aqueous solution Substances 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 29
- 238000007667 floating Methods 0.000 claims description 26
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 14
- 239000008119 colloidal silica Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000003754 machining Methods 0.000 claims description 9
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 40
- 230000007547 defect Effects 0.000 description 35
- 239000007789 gas Substances 0.000 description 26
- 230000003746 surface roughness Effects 0.000 description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 239000006096 absorbing agent Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
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- 230000003287 optical effect Effects 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- -1 silicide nitride Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Surface Treatment Of Glass (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (8)
- 마스크 블랭크용 유리 기판 표면의 볼록/오목 형상을 측정하는 형상 측정 단계;상기 형상 측정 단계에서 얻어진 측정 결과를 참조로 상기 유리 기판 표면에 존재하는 볼록부의 볼록도를 특정하고, 상기 볼록도에 따른 가공 조건으로 상기 볼록부에 국소 제거를 가함으로써 상기 유리 기판 표면의 평탄도를 유리 기판에 요구되는 요망되는 평탄도에 따라 결정된 기준치 이하의 값으로 제어하는 평탄도 제어 단계로서, 국소 제거가 플라스마 에칭, 가스 클러스터 이온 빔 및 MRF (MagnetRheological Finishing) 중 어느 하나에 의해 실행되는 평탄도 제어 단계; 및상기 평탄도 제어 단계 후, 상기 유리 기판 표면과 연마 공구 표면이 직접 접촉하지 않고 그 사이에 개재되는 가공액의 작용으로 상기 국소 제거가 가해진 상기 유리 기판 표면을 연마하는 비접촉 연마 단계로서, 비접촉 연마 단계가 부상 연마, EEM (Elastic Emission Machining) 및 하이드로플레인 연마 중 어느 하나에 의해 실행되는 비접촉 연마 단계를 포함하여, 극초단 자외선 (EUV) 광을 노광 광원으로서 이용하는 EUV 마스크 블랭크용 유리 기판을 제조하는 방법.
- 삭제
- 제 1 항에 있어서, 상기 가공액이,물, 산성 수용액, 및 알칼리성 수용액으로부터 선택된 수용액; 또는상기 수용액과 콜로이드 실리카, 산화세륨, 산화지르코늄, 및 산화알루미늄으로부터 선택된 적어도 한 종류의 미세 분말 입자들의 혼합물을 포함하는 것을 특징으로 하는 EUV 마스크 블랭크용 유리 기판을 제조하는 방법.
- 삭제
- 제 1 항에 있어서, 상기 기준치가 0.25㎛ 이하인 것을 특징으로 하는 EUV 마스크 블랭크용 유리 기판을 제조하는 방법.
- 제 1 항에 따른 EUV 마스크 블랭크용 유리 기판 제조 방법에 의해 얻어진 유리 기판을 준비하는 단계, 상기 유리 기판 상에 피전사 패턴으로서 박막을 형성하는 단계를 포함하여, EUV 광을 노광 광원으로서 이용하는 EUV 반사형 마스크 블랭크를 제조하는 방법.
- 제 6 항에 따른 EUV 반사형 마스크 블랭크 제조 방법에 의해 얻어진 마스크 블랭크를 준비하는 단계, 상기 마스크 블랭크의 박막을 패턴화하여 상기 유리 기판 상에 박막 패턴을 형성하는 단계를 포함하여, EUV 광을 노광 광원으로서 이용하는 EUV 반사형 마스크를 제조하는 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00090682 | 2003-03-28 | ||
JP2003090682A JP4219718B2 (ja) | 2003-03-28 | 2003-03-28 | Euvマスクブランクス用ガラス基板の製造方法及びeuvマスクブランクスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040085052A KR20040085052A (ko) | 2004-10-07 |
KR100839721B1 true KR100839721B1 (ko) | 2008-06-19 |
Family
ID=32985291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040021037A KR100839721B1 (ko) | 2003-03-28 | 2004-03-27 | 마스크 블랭크용 유리 기판 제조 방법 및 마스크 블랭크제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040192171A1 (ko) |
JP (1) | JP4219718B2 (ko) |
KR (1) | KR100839721B1 (ko) |
DE (1) | DE102004014953A1 (ko) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100556141B1 (ko) * | 2003-03-27 | 2006-03-03 | 호야 가부시키가이샤 | 마스크 블랭크용 유리 기판 제조 방법 및 마스크 블랭크제조 방법 |
US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
JP4448766B2 (ja) * | 2004-12-08 | 2010-04-14 | 信越化学工業株式会社 | 研磨方法 |
KR20070097090A (ko) * | 2005-02-02 | 2007-10-02 | 아사히 가라스 가부시키가이샤 | 유리 기판의 연마 방법 |
JP2006224233A (ja) * | 2005-02-17 | 2006-08-31 | Hoya Corp | マスクブランクス用ガラス基板の製造方法及びマスクブランクスの製造方法 |
JP4362732B2 (ja) * | 2005-06-17 | 2009-11-11 | 信越化学工業株式会社 | フォトマスク用大型ガラス基板及びその製造方法、コンピュータ読み取り可能な記録媒体、並びにマザーガラスの露光方法 |
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- 2004-03-26 US US10/809,523 patent/US20040192171A1/en not_active Abandoned
- 2004-03-26 DE DE102004014953A patent/DE102004014953A1/de not_active Withdrawn
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KR20040085052A (ko) | 2004-10-07 |
JP4219718B2 (ja) | 2009-02-04 |
DE102004014953A1 (de) | 2004-11-04 |
JP2004291209A (ja) | 2004-10-21 |
US20040192171A1 (en) | 2004-09-30 |
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