KR100802452B1 - 발광소자, 그 제조방법 및 led램프 - Google Patents
발광소자, 그 제조방법 및 led램프 Download PDFInfo
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- KR100802452B1 KR100802452B1 KR1020057011483A KR20057011483A KR100802452B1 KR 100802452 B1 KR100802452 B1 KR 100802452B1 KR 1020057011483 A KR1020057011483 A KR 1020057011483A KR 20057011483 A KR20057011483 A KR 20057011483A KR 100802452 B1 KR100802452 B1 KR 100802452B1
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- South Korea
- Prior art keywords
- substrate
- layer
- light emitting
- light
- gan
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- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 229910052594 sapphire Inorganic materials 0.000 claims description 46
- 239000010980 sapphire Substances 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 65
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 31
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 30
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 23
- 239000012159 carrier gas Substances 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 16
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 16
- 229910021529 ammonia Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000005202 decontamination Methods 0.000 description 10
- 230000003588 decontaminative effect Effects 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 9
- 230000005587 bubbling Effects 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 2
- 238000013041 optical simulation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002369092A JP4201079B2 (ja) | 2002-12-20 | 2002-12-20 | 発光素子、その製造方法およびledランプ |
JPJP-P-2002-00369092 | 2002-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050091736A KR20050091736A (ko) | 2005-09-15 |
KR100802452B1 true KR100802452B1 (ko) | 2008-02-13 |
Family
ID=32677134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057011483A KR100802452B1 (ko) | 2002-12-20 | 2003-12-19 | 발광소자, 그 제조방법 및 led램프 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP4201079B2 (de) |
KR (1) | KR100802452B1 (de) |
CN (1) | CN100361322C (de) |
AU (1) | AU2003292584A1 (de) |
DE (1) | DE10393949T5 (de) |
TW (1) | TWI241032B (de) |
WO (1) | WO2004057682A1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100289043A1 (en) * | 2006-11-15 | 2010-11-18 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) through multiple extractors |
KR100649494B1 (ko) | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
JP2006066442A (ja) * | 2004-08-24 | 2006-03-09 | Kyocera Corp | 半導体素子用単結晶サファイア基板とその製造方法及び半導体発光素子 |
CN100461471C (zh) * | 2004-11-11 | 2009-02-11 | 晶元光电股份有限公司 | 高亮度的发光元件及其制造方法 |
KR100624449B1 (ko) | 2004-12-08 | 2006-09-18 | 삼성전기주식회사 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
US20070145386A1 (en) | 2004-12-08 | 2007-06-28 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
JP5082278B2 (ja) | 2005-05-16 | 2012-11-28 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
KR20070081184A (ko) | 2006-02-10 | 2007-08-16 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
WO2007098215A2 (en) * | 2006-02-17 | 2007-08-30 | The Regents Of The University Of California | Method for growth of semipolar (al,in,ga,b)n optoelectronic devices |
TWI288491B (en) * | 2006-03-02 | 2007-10-11 | Nat Univ Chung Hsing | High extraction efficiency of solid-state light emitting device |
KR100786777B1 (ko) * | 2006-03-28 | 2007-12-18 | 전북대학교산학협력단 | 반도체 구조물의 제조 방법 |
DE102007004302A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
JP5176334B2 (ja) * | 2007-02-01 | 2013-04-03 | 日亜化学工業株式会社 | 半導体発光素子 |
KR101364168B1 (ko) * | 2007-03-20 | 2014-02-18 | 서울바이오시스 주식회사 | 발광 소자용 기판 제조방법 |
JP4804444B2 (ja) * | 2007-10-31 | 2011-11-02 | 泰谷光電科技股▲ふん▼有限公司 | 発光ダイオードの構造及びその製造方法 |
CN101488545B (zh) * | 2008-01-18 | 2011-10-05 | 泰谷光电科技股份有限公司 | 发光二极管基板表面粗化的方法 |
CN101533881B (zh) * | 2008-03-11 | 2012-05-02 | 广镓光电股份有限公司 | 半导体发光组件 |
CN101621097B (zh) * | 2008-07-04 | 2011-12-28 | 泰谷光电科技股份有限公司 | 光电装置及其制造方法 |
CN101661981B (zh) * | 2008-08-29 | 2014-10-22 | 广镓光电股份有限公司 | 用于制造发光元件的基板以及利用该基板制造的发光元件 |
CN102024885A (zh) * | 2009-09-10 | 2011-04-20 | 鸿富锦精密工业(深圳)有限公司 | 氮化物半导体发光元件 |
JP5603085B2 (ja) * | 2010-01-06 | 2014-10-08 | 株式会社ディスコ | 光デバイスウエーハの製造方法 |
JP2010135855A (ja) * | 2010-03-16 | 2010-06-17 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
JP2010147505A (ja) * | 2010-03-16 | 2010-07-01 | Showa Denko Kk | 発光素子の製造方法及び発光素子 |
US8217488B2 (en) * | 2010-07-19 | 2012-07-10 | Walsin Lihwa Corporation | GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping |
CN101937967B (zh) * | 2010-09-14 | 2012-07-04 | 映瑞光电科技(上海)有限公司 | 发光二极管、发光装置及制造方法 |
CN102130271A (zh) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Led芯片封装结构与白光led发光装置 |
CN102130249B (zh) * | 2010-09-28 | 2013-05-01 | 映瑞光电科技(上海)有限公司 | 超亮度发光二极管及其制作方法 |
JP5246235B2 (ja) * | 2010-09-30 | 2013-07-24 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP5246236B2 (ja) * | 2010-09-30 | 2013-07-24 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
EP2633103B1 (de) * | 2010-10-29 | 2015-07-29 | The Regents of The University of California | Ammonothermale züchtung von gruppe-iii-nitrid-kristallen auf keimen mit mindestens zwei flächen in einem spitzen, rechten oder stumpfen winkel zueinander |
CN102324460A (zh) * | 2011-10-24 | 2012-01-18 | 佛山市国星光电股份有限公司 | 基于图形化封装基板的led封装装置 |
JP5811009B2 (ja) | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体 |
CN103545170A (zh) * | 2012-07-13 | 2014-01-29 | 华夏光股份有限公司 | 半导体装置及其制造方法 |
JP2014034481A (ja) * | 2012-08-07 | 2014-02-24 | Hitachi Metals Ltd | 窒化ガリウム結晶成長用サファイア基板、窒化ガリウム結晶の製造方法、及び窒化ガリウム結晶 |
US20160056352A1 (en) * | 2012-10-12 | 2016-02-25 | Asahi Kasei E-Materials Corporation | Optical substrate, semiconductor light emitting device and manufacturing method of the same |
KR20140085918A (ko) * | 2012-12-28 | 2014-07-08 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
JP6020357B2 (ja) | 2013-05-31 | 2016-11-02 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体 |
US9896780B2 (en) | 2013-07-26 | 2018-02-20 | Stanley Electric Co., Ltd. | Method for pretreatment of base substrate and method for manufacturing layered body using pretreated base substrate |
TWI640104B (zh) * | 2014-05-30 | 2018-11-01 | 日商日亞化學工業股份有限公司 | 氮化物半導體元件及其製造方法 |
WO2015186478A1 (ja) * | 2014-06-03 | 2015-12-10 | シャープ株式会社 | 窒化物半導体発光素子 |
CN104752586A (zh) * | 2015-03-27 | 2015-07-01 | 华南理工大学 | 一种led图形优化封装基板、led封装体及其制备方法 |
TWI790984B (zh) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | 發光元件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168387A (ja) * | 1999-09-29 | 2001-06-22 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
JP2002280611A (ja) * | 2001-03-21 | 2002-09-27 | Mitsubishi Cable Ind Ltd | 半導体発光素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3439063B2 (ja) * | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | 半導体発光素子および発光ランプ |
JP4032538B2 (ja) * | 1998-11-26 | 2008-01-16 | ソニー株式会社 | 半導体薄膜および半導体素子の製造方法 |
JP3556916B2 (ja) | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
JP3595276B2 (ja) * | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | 紫外線発光素子 |
JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
-
2002
- 2002-12-20 JP JP2002369092A patent/JP4201079B2/ja not_active Expired - Lifetime
-
2003
- 2003-12-19 WO PCT/JP2003/016330 patent/WO2004057682A1/ja active Application Filing
- 2003-12-19 TW TW92136289A patent/TWI241032B/zh not_active IP Right Cessation
- 2003-12-19 AU AU2003292584A patent/AU2003292584A1/en not_active Abandoned
- 2003-12-19 KR KR1020057011483A patent/KR100802452B1/ko active IP Right Grant
- 2003-12-19 CN CNB2003801090522A patent/CN100361322C/zh not_active Expired - Lifetime
- 2003-12-19 DE DE10393949T patent/DE10393949T5/de not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168387A (ja) * | 1999-09-29 | 2001-06-22 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子 |
JP2002280611A (ja) * | 2001-03-21 | 2002-09-27 | Mitsubishi Cable Ind Ltd | 半導体発光素子 |
Also Published As
Publication number | Publication date |
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JP2004200523A (ja) | 2004-07-15 |
TW200418207A (en) | 2004-09-16 |
AU2003292584A1 (en) | 2004-07-14 |
WO2004057682A1 (ja) | 2004-07-08 |
CN1742381A (zh) | 2006-03-01 |
KR20050091736A (ko) | 2005-09-15 |
DE10393949T5 (de) | 2011-12-01 |
JP4201079B2 (ja) | 2008-12-24 |
CN100361322C (zh) | 2008-01-09 |
TWI241032B (en) | 2005-10-01 |
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