CN100361322C - 发光元件、其制造方法以及led灯 - Google Patents

发光元件、其制造方法以及led灯 Download PDF

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Publication number
CN100361322C
CN100361322C CNB2003801090522A CN200380109052A CN100361322C CN 100361322 C CN100361322 C CN 100361322C CN B2003801090522 A CNB2003801090522 A CN B2003801090522A CN 200380109052 A CN200380109052 A CN 200380109052A CN 100361322 C CN100361322 C CN 100361322C
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light
substrate
semiconductor layer
layer
emitting component
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Expired - Lifetime
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English (en)
Chinese (zh)
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CN1742381A (zh
Inventor
安田刚规
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Toyoda Gosei Co Ltd
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Showa Denko KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
CNB2003801090522A 2002-12-20 2003-12-19 发光元件、其制造方法以及led灯 Expired - Lifetime CN100361322C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP369092/2002 2002-12-20
JP2002369092A JP4201079B2 (ja) 2002-12-20 2002-12-20 発光素子、その製造方法およびｌｅｄランプ

Publications (2)

Publication Number Publication Date
CN1742381A CN1742381A (zh) 2006-03-01
CN100361322C true CN100361322C (zh) 2008-01-09

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Family Applications (1)

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CNB2003801090522A Expired - Lifetime CN100361322C (zh) 2002-12-20 2003-12-19 发光元件、其制造方法以及led灯

Country Status (7)

Country Link
JP (1) JP4201079B2 (de)
KR (1) KR100802452B1 (de)
CN (1) CN100361322C (de)
AU (1) AU2003292584A1 (de)
DE (1) DE10393949T5 (de)
TW (1) TWI241032B (de)
WO (1) WO2004057682A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545170A (zh) * 2012-07-13 2014-01-29 华夏光股份有限公司 半导体装置及其制造方法
CN101661981B (zh) * 2008-08-29 2014-10-22 广镓光电股份有限公司 用于制造发光元件的基板以及利用该基板制造的发光元件

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KR100649494B1 (ko) 2004-08-17 2006-11-24 삼성전기주식회사 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드
JP2006066442A (ja) * 2004-08-24 2006-03-09 Kyocera Corp 半導体素子用単結晶サファイア基板とその製造方法及び半導体発光素子
CN100461471C (zh) * 2004-11-11 2009-02-11 晶元光电股份有限公司 高亮度的发光元件及其制造方法
KR100624449B1 (ko) 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
US20070145386A1 (en) 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
JP5082278B2 (ja) 2005-05-16 2012-11-28 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
KR20070081184A (ko) 2006-02-10 2007-08-16 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
WO2007098215A2 (en) * 2006-02-17 2007-08-30 The Regents Of The University Of California Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
TWI288491B (en) * 2006-03-02 2007-10-11 Nat Univ Chung Hsing High extraction efficiency of solid-state light emitting device
KR100786777B1 (ko) * 2006-03-28 2007-12-18 전북대학교산학협력단 반도체 구조물의 제조 방법
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR20090082923A (ko) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 다중 추출기를 통하여 광을 고효율로 추출하는 발광 다이오드
JP5176334B2 (ja) * 2007-02-01 2013-04-03 日亜化学工業株式会社 半導体発光素子
KR101364168B1 (ko) * 2007-03-20 2014-02-18 서울바이오시스 주식회사 발광 소자용 기판 제조방법
JP4804444B2 (ja) * 2007-10-31 2011-11-02 泰谷光電科技股▲ふん▼有限公司 発光ダイオードの構造及びその製造方法
CN101488545B (zh) * 2008-01-18 2011-10-05 泰谷光电科技股份有限公司 发光二极管基板表面粗化的方法
CN101533881B (zh) * 2008-03-11 2012-05-02 广镓光电股份有限公司 半导体发光组件
CN101621097B (zh) * 2008-07-04 2011-12-28 泰谷光电科技股份有限公司 光电装置及其制造方法
CN102024885A (zh) * 2009-09-10 2011-04-20 鸿富锦精密工业（深圳）有限公司 氮化物半导体发光元件
JP5603085B2 (ja) * 2010-01-06 2014-10-08 株式会社ディスコ 光デバイスウエーハの製造方法
JP2010135855A (ja) * 2010-03-16 2010-06-17 Showa Denko Kk 発光素子の製造方法及び発光素子
JP2010147505A (ja) * 2010-03-16 2010-07-01 Showa Denko Kk 発光素子の製造方法及び発光素子
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
CN101937967B (zh) * 2010-09-14 2012-07-04 映瑞光电科技(上海)有限公司 发光二极管、发光装置及制造方法
CN102130249B (zh) * 2010-09-28 2013-05-01 映瑞光电科技(上海)有限公司 超亮度发光二极管及其制作方法
CN102130271A (zh) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 Led芯片封装结构与白光led发光装置
JP5246235B2 (ja) * 2010-09-30 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5246236B2 (ja) * 2010-09-30 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
KR20140068793A (ko) * 2010-10-29 2014-06-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 서로 간에 예각, 직각 또는 둔각을 이루는 적어도 2개의 표면들을 가진 시드들 상에서의 ⅲ-족 질화물 결정들의 암모니아 열적 성장
CN102324460A (zh) * 2011-10-24 2012-01-18 佛山市国星光电股份有限公司 基于图形化封装基板的led封装装置
JP5811009B2 (ja) 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
JP2014034481A (ja) * 2012-08-07 2014-02-24 Hitachi Metals Ltd 窒化ガリウム結晶成長用サファイア基板、窒化ガリウム結晶の製造方法、及び窒化ガリウム結晶
EP3043392A1 (de) * 2012-10-12 2016-07-13 Asahi Kasei E-materials Corporation Optisches substrat, lichtemittierendes halbleiterbauelement und herstellungsverfahren dafür
KR20140085918A (ko) * 2012-12-28 2014-07-08 서울바이오시스 주식회사 발광 소자 및 그것을 제조하는 방법
JP6020357B2 (ja) 2013-05-31 2016-11-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
WO2015012403A1 (ja) * 2013-07-26 2015-01-29 株式会社トクヤマ ベース基板の前処理方法、および該前処理を行ったベース基板を用いた積層体の製造方法
TWI640104B (zh) * 2014-05-30 2018-11-01 日商日亞化學工業股份有限公司 氮化物半導體元件及其製造方法
JP6227134B2 (ja) * 2014-06-03 2017-11-08 シャープ株式会社 窒化物半導体発光素子
CN104752586A (zh) * 2015-03-27 2015-07-01 华南理工大学 一种led图形优化封装基板、led封装体及其制备方法
TWI778010B (zh) * 2017-01-26 2022-09-21 晶元光電股份有限公司 發光元件

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JPH10270754A (ja) * 1997-03-24 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および発光ランプ
JP2000164929A (ja) * 1998-11-26 2000-06-16 Sony Corp 半導体薄膜と半導体素子と半導体装置とこれらの製造方法
JP2001168387A (ja) * 1999-09-29 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002280611A (ja) * 2001-03-21 2002-09-27 Mitsubishi Cable Ind Ltd 半導体発光素子
JP2002280609A (ja) * 2001-03-21 2002-09-27 Mitsubishi Cable Ind Ltd 紫外線発光素子
CN1529915A (zh) * 2001-07-24 2004-09-15 日亚化学工业株式会社 具有形成凹凸的基板的半导体发光元件

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JP3556916B2 (ja) 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH10270754A (ja) * 1997-03-24 1998-10-09 Sanyo Electric Co Ltd 半導体発光素子および発光ランプ
JP2000164929A (ja) * 1998-11-26 2000-06-16 Sony Corp 半導体薄膜と半導体素子と半導体装置とこれらの製造方法
JP2001168387A (ja) * 1999-09-29 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002280611A (ja) * 2001-03-21 2002-09-27 Mitsubishi Cable Ind Ltd 半導体発光素子
JP2002280609A (ja) * 2001-03-21 2002-09-27 Mitsubishi Cable Ind Ltd 紫外線発光素子
CN1529915A (zh) * 2001-07-24 2004-09-15 日亚化学工业株式会社 具有形成凹凸的基板的半导体发光元件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661981B (zh) * 2008-08-29 2014-10-22 广镓光电股份有限公司 用于制造发光元件的基板以及利用该基板制造的发光元件
CN103545170A (zh) * 2012-07-13 2014-01-29 华夏光股份有限公司 半导体装置及其制造方法

Also Published As

Publication number Publication date
KR100802452B1 (ko) 2008-02-13
TWI241032B (en) 2005-10-01
JP2004200523A (ja) 2004-07-15
JP4201079B2 (ja) 2008-12-24
DE10393949T5 (de) 2011-12-01
TW200418207A (en) 2004-09-16
WO2004057682A1 (ja) 2004-07-08
AU2003292584A1 (en) 2004-07-14
KR20050091736A (ko) 2005-09-15
CN1742381A (zh) 2006-03-01

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