KR100786200B1 - 표시장치용 어레이 기판의 제조방법 - Google Patents
표시장치용 어레이 기판의 제조방법 Download PDFInfo
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- KR100786200B1 KR100786200B1 KR1020060009912A KR20060009912A KR100786200B1 KR 100786200 B1 KR100786200 B1 KR 100786200B1 KR 1020060009912 A KR1020060009912 A KR 1020060009912A KR 20060009912 A KR20060009912 A KR 20060009912A KR 100786200 B1 KR100786200 B1 KR 100786200B1
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- resin layer
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- ZUVBIBLYOCVYJU-UHFFFAOYSA-N naphthalene-1,7-diol Chemical compound C1=CC=C(O)C2=CC(O)=CC=C21 ZUVBIBLYOCVYJU-UHFFFAOYSA-N 0.000 description 1
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- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical class OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/16—Devices for covering leaks in pipes or hoses, e.g. hose-menders
- F16L55/179—Devices for covering leaks in pipes or hoses, e.g. hose-menders specially adapted for bends, branch units, branching pipes or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
Description
물성 | OPP | PET |
두께(㎛) | 30 | 19 |
용융점(℃) | 171.4 | 251.4 |
구분 | Rp-v | Rms rough | Ave rough | MHt | Rp | Valley(Rv) |
PET-1 | 0.2322 | 0.0112 | 0.0072 | 0.0732 | 0.1590 | -0.0732 |
PET-2 | 0.4342 | 0.0210 | 0.0101 | 0.2584 | 0.1757 | -0.2584 |
PET-3 | 0.1724 | 0.0065 | 0.0037 | 0.0444 | 0.1280 | -0.0444 |
PET-4 | 0.2009 | 0.0131 | 0.0088 | 0.0613 | 0.1396 | -0.0613 |
PET-5 | 0.1340 | 0.0053 | 0.0034 | 0.0336 | 0.1003 | -0.0336 |
PET-6 | 0.1161 | 0.0040 | 0.0025 | 0.0249 | 0.0913 | -0.0249 |
PET-7 | 0.1602 | 0.0046 | 0.0024 | 0.0415 | 0.1187 | -0.0415 |
PET-8 | 0.1378 | 0.0059 | 0.0030 | 0.0420 | 0.0958 | -0.0420 |
평균 | 0.1985 | 0.0089 | 0.0051 | 0.0724 | 0.1260 | -0.0724 |
구분 | Rp-v | Rms rough | Ave rough | MHt | Rp | Valley(Rv) |
OPP-1 | 0.0804 | 0.0077 | 0.0061 | 0.0322 | 0.0482 | -0.0322 |
OPP-2 | 0.0789 | 0.0080 | 0.0063 | 0.0343 | 0.0446 | -0.0343 |
OPP-3 | 0.1198 | 0.0081 | 0.0061 | 0.0461 | 0.0737 | -0.0461 |
OPP-4 | 0.1438 | 0.0084 | 0.0063 | 0.0480 | 0.0958 | -0.0480 |
OPP-5 | 0.0650 | 0.0064 | 0.0050 | 0.0272 | 0.0378 | -0.0272 |
OPP-6 | 0.1028 | 0.0099 | 0.0076 | 0.0479 | 0.0549 | -0.0479 |
OPP-7 | 0.0759 | 0.0069 | 0.0054 | 0.0288 | 0.0471 | -0.0288 |
OPP-8 | 0.0728 | 0.0075 | 0.0059 | 0.0321 | 0.0407 | -0.0321 |
평균 | 0.0924 | 0.0079 | 0.0061 | 0.0371 | 0.0554 | -0.0371 |
구분 | 감도(mJ/㎤) | 해상도(㎛) | 필름형성성 | 필름이형성 (㎏/100×100㎟) |
실시예 1 | 65.1 | 4.5 | ○ | 0.0686 |
실시예 2 | 63.1 | 5.2 | ○ | 0.0692 |
실시예 3 | 61.5 | 4.8 | ○ | 0.0729 |
실시예 4 | 64.0 | 4.3 | ○ | 0.0547 |
실시예 5 | 62.7 | 5.2 | ○ | 0.0561 |
실시예 6 | 60.8 | 4.7 | ○ | 0.0564 |
비교예 1 | 45.5 | 4.1 | × | × |
Claims (19)
- 지지체 필름과 상기 지지체 필름 위에 형성된 포지티브형 포토레지스트 수지층으로 구성되며, 상기 포지티브형 포토레지스트 수지층은 수지, 포지티브형 감광성 화합물, 가열에 의해 제2용매가 제거될 때까지 수지층 내에 그대로 남아 있도록 제2용매보다 상대적으로 높은 비점을 가진 제1용매 및 제2용매를 포함하는 포지티브형 드라이 필름을 기판의 표면에 상기 포지티브형 포토레지스트 수지층이 접촉되도록 부착시키는 단계;기판의 표면에 부착된 포토레지스트 수지층으로부터 지지체 필름을 박리하는 단계;상기 포토레지스트 수지층을 노광시키는 단계; 및 상기 포지티브형 포토레지스트 수지층 내의 노광된 부분을 현상하여 제거하는 단계를 포함하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 1항에 있어서, 상기 포지티브형 포토레지스트 수지층을 노광시키는 단계의 전 또는 후에 열처리(Baking)하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 1항에 있어서, 포토레지스트 수지층을 노광시킨 후에 노광된 포토레지스트 수지층으로부터 상기 지지체 필름을 박리하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 삭제
- 제 1항에 있어서, 제 1 용매와 제 2 용매간의 비점 차이가 30℃이상인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 1항에 있어서. 제 1 용매와 제 2 용매간의 비점 차이가 50℃이상인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 5항 또는 제 6항에 있어서, 제 1 용매 및 제 2 용매는 에틸 아세테이트, 부틸 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트, 디에틸렌글리콜 모노에틸에테르 아세테이트, 프로필렌글리콜 모노에틸에테르 아세테이트, 아세톤, 메틸에틸 케톤, 에틸 알코올, 메틸 알코올, 프로필 알코올, 이소프로필 알코올, 벤젠, 톨루엔, 시클로펜타논, 시클로헥사논, 에틸렌글리콜, 크실렌, 에틸렌글리콜 모노에틸에테르 및 디에틸렌글리콜 모노에틸에테르로 이루어진 군으로부터 선택된 1종의 화합물 이거나 이들의 혼합물인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 5항 또는 제 6항에 있어서, 제 1 용매의 비점은 100℃ 이상이고, 제 2 용매의 비점이 100℃ 미만인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 5항에 있어서, 제 1 용매가 톨루엔, 부틸아세테이트, 싸이클로펜타노온, 에틸렌글리콜 모노에틸에테르, 크실렌(xylene), 싸이클로헥사노온, 에틸렌글리콜, 디에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 모노에틸에테르 아세테이트, 디에틸렌글리콜 모노에틸에테르 아세테이트 및 프로필렌글리콜 모노에틸에테르 아세테이트로 이루어진 그룹 중에서 선택된 1종의 화합물 이거나 이들의 혼합물이고, 제 2 용매가 아세톤, 메틸 알코올, 에틸 아세테이트, 메틸에틸케톤, 벤젠 및 이소프로필 알코올로 이루어진 그룹 중에서 선택된 1종의 화합물 이거나 이들의 혼합물인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 1항에 있어서, 상기 포토레지스트 수지층은 100중량부의 알칼리 가용성 수지, 30 내지 80 중량부의 디아지드계 감광성 화합물, 3 내지 15 중량부의 감도증진제 및 약 30 내지 120 중량부의 용매를 포함하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 10항에 있어서, 상기 알칼리 가용성 수지는 노볼락 수지인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 10항에 있어서, 상기 디아지드계 감광성 화합물은 1,2-벤조퀴논 디아지드-4-술폰산 클로라이드, 1,2-나프토퀴논 디아지드-4-술폰산 클로라이드 및 1,2-나프토퀴논 디아지드-5-술폰산 클로라이드 중에서 선택된 1종의 화합물 이거나 이들의 혼합물인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 10항에 있어서, 상기 감도 증진제는 2,3,4-트리히드록시벤조페논, 2,2',4,4'-테트라히드록시벤조페논 및 (1-[1-(4-히드록시페닐)이소프로필]-4-[1,1-비스(4-히드록시페닐)에틸]벤젠)으로 이루어진 군으로부터 선택된 1종의 화합물 이거나 이들의 혼합물인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 10항에 있어서, 상기 포지티브형 포토레지스트 수지층은 이형제를 더 포함하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 14항에 있어서, 상기 포지티브형 포토레지스트 수지층은 상기 알칼리 가용성 수지 100중량부에 대하여 0.5 내지 4 중량부의 이형제를 포함하는 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 제 14항에 있어서, 상기 이형제는 불소계 실리콘인 것을 특징으로 하는 표시장치용 어레이의 제조방법.
- 표시장치용 어레이로서, 투명 기판 상에 격자상으로 배열된 다수의 신호선 및 주사선을 포함하고, 상기의 각 격자는 박막 트랜지스터에 연결되며, 상기 표시장치는:지지체 필름에 포지티브형 포토레지스트 수지층이 형성되어 있는 포지티브형 드라이 필름을, 상기 포토레지스트 수지층이 기판의 표면에 부착되도록 상기 기판에 부착시키는 단계;상기 포토레지스트 수지층을 노광시키는 단계;기판의 표면에 부착된 포토레지스트 수지층으로부터 지지체 필름을 박리하는 단계; 및상기 포지티브형 포토레지스트 수지층 내의 노광된 부분을 현상하여 제거하는 단계를 포함하는 방법에 의해 형성되는 것을 특징으로 하는 표지장치용 어레이.
- 삭제
- 삭제
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KR20100066808A (ko) * | 2008-12-10 | 2010-06-18 | 주식회사 동진쎄미켐 | 포지티브형 감광성 유-무기 하이브리드 절연막 조성물 |
JP5590837B2 (ja) * | 2009-09-15 | 2014-09-17 | キヤノン株式会社 | 機能性領域の移設方法 |
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JP6022254B2 (ja) * | 2012-08-06 | 2016-11-09 | 東京応化工業株式会社 | スクリーン印刷用インク組成物およびパターン形成方法 |
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US20080135842A1 (en) | 2008-06-12 |
WO2006083104A1 (en) | 2006-08-10 |
KR20060088843A (ko) | 2006-08-07 |
CN100565310C (zh) | 2009-12-02 |
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