KR100773336B1 - 포지티브 포토레지스트 조성물 - Google Patents

포지티브 포토레지스트 조성물 Download PDF

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Publication number
KR100773336B1
KR100773336B1 KR1020020017575A KR20020017575A KR100773336B1 KR 100773336 B1 KR100773336 B1 KR 100773336B1 KR 1020020017575 A KR1020020017575 A KR 1020020017575A KR 20020017575 A KR20020017575 A KR 20020017575A KR 100773336 B1 KR100773336 B1 KR 100773336B1
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KR
South Korea
Prior art keywords
group
positive photoresist
photoresist composition
represented
compound
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Expired - Fee Related
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KR1020020017575A
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English (en)
Korean (ko)
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KR20020077275A (ko
Inventor
우에니시가즈야
아오아이도시아키
사토겐이치로
Original Assignee
후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020020017575A 2001-03-30 2002-03-30 포지티브 포토레지스트 조성물 Expired - Fee Related KR100773336B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001100300A JP4117112B2 (ja) 2001-03-30 2001-03-30 ポジ型フォトレジスト組成物
JPJP-P-2001-00100300 2001-03-30

Publications (2)

Publication Number Publication Date
KR20020077275A KR20020077275A (ko) 2002-10-11
KR100773336B1 true KR100773336B1 (ko) 2007-11-05

Family

ID=18953751

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020017575A Expired - Fee Related KR100773336B1 (ko) 2001-03-30 2002-03-30 포지티브 포토레지스트 조성물

Country Status (4)

Country Link
US (1) US6962766B2 (enExample)
JP (1) JP4117112B2 (enExample)
KR (1) KR100773336B1 (enExample)
TW (1) TW594411B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20100064338A (ko) * 2008-12-04 2010-06-14 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법

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JP4839522B2 (ja) * 2001-04-12 2011-12-21 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
KR100630029B1 (ko) * 2002-11-06 2006-09-27 마츠시타 덴끼 산교 가부시키가이샤 변위 검출 기능을 구비한 마이크로 액츄에이터, 및 당해마이크로 액츄에이터를 구비한 가변형 미러
JP4637476B2 (ja) 2002-12-19 2011-02-23 東京応化工業株式会社 ホトレジスト組成物の製造方法
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP2005031233A (ja) * 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
US7601479B2 (en) * 2003-09-12 2009-10-13 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7132218B2 (en) * 2004-03-23 2006-11-07 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
JP4393910B2 (ja) * 2004-04-08 2010-01-06 東京応化工業株式会社 ホトレジスト組成物の製造方法、ろ過装置、塗布装置及びホトレジスト組成物
JP2005300998A (ja) * 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4448767B2 (ja) * 2004-10-08 2010-04-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
JP4786238B2 (ja) * 2005-07-19 2011-10-05 東京応化工業株式会社 レジスト組成物の製造方法、ろ過装置、レジスト組成物の塗布装置
JP2007079552A (ja) * 2005-08-17 2007-03-29 Jsr Corp 感放射線性樹脂組成物
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7476492B2 (en) * 2006-05-26 2009-01-13 International Business Machines Corporation Low activation energy photoresist composition and process for its use
EP2420891B1 (en) * 2006-10-30 2021-06-23 Rohm and Haas Electronic Materials LLC Process for immersion lithography
JP4296447B2 (ja) * 2006-11-22 2009-07-15 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5997873B2 (ja) * 2008-06-30 2016-09-28 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
JP5469954B2 (ja) * 2008-08-22 2014-04-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5548406B2 (ja) 2008-08-22 2014-07-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5542413B2 (ja) 2008-11-12 2014-07-09 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
EP2189846B1 (en) * 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
JP5244657B2 (ja) 2009-03-10 2013-07-24 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5264575B2 (ja) 2009-03-11 2013-08-14 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5850607B2 (ja) * 2010-09-28 2016-02-03 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
JP5933339B2 (ja) * 2012-05-23 2016-06-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6174420B2 (ja) * 2013-08-23 2017-08-02 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物及びそれを用いたレジストパターンの製造方法
KR102437123B1 (ko) * 2016-07-12 2022-08-26 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법

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KR19990083370A (ko) * 1998-04-22 1999-11-25 무네유키 가코우 포지티브형감광성수지조성물
KR20000076939A (ko) * 1999-03-31 2000-12-26 고오사이 아끼오 화학 증폭형 포지티브 레지스트

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EP0249139B2 (en) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3712218B2 (ja) 1997-01-24 2005-11-02 東京応化工業株式会社 化学増幅型ホトレジスト組成物
JP3546679B2 (ja) 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3738562B2 (ja) 1998-02-19 2006-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP3042618B2 (ja) * 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
JP3642228B2 (ja) * 1999-05-19 2005-04-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
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JP4358940B2 (ja) * 1999-08-26 2009-11-04 丸善石油化学株式会社 シクロヘキサンラクトン構造を有する重合性化合物及び重合体
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JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物

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KR20000076939A (ko) * 1999-03-31 2000-12-26 고오사이 아끼오 화학 증폭형 포지티브 레지스트

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100064338A (ko) * 2008-12-04 2010-06-14 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법
KR101715393B1 (ko) 2008-12-04 2017-03-10 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법
KR101780156B1 (ko) 2008-12-04 2017-09-19 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물, 레지스트 패턴 형성 방법

Also Published As

Publication number Publication date
JP4117112B2 (ja) 2008-07-16
JP2002296779A (ja) 2002-10-09
US6962766B2 (en) 2005-11-08
KR20020077275A (ko) 2002-10-11
US20030031950A1 (en) 2003-02-13
TW594411B (en) 2004-06-21

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